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1. 发明授权

US07680321B2 Method and system to compensate for lamp intensity differences in a photolithographic inspection tool 失效
标题翻译：补偿光刻检测工具灯强度差异的方法和系统
公开(公告)号：US07680321B2
公开(公告)日：2010-03-16
申请号：US12101260
申请日：2008-04-11
申请人： David Dixon , Lloyd Lee
发明人： David Dixon , Lloyd Lee
IPC分类号： G06K9/00
CPC分类号： G01N21/95607 , G01N21/278 , G01N21/93 , G01N21/9501 , G01N2021/8416 , G01N2201/0695 , G01N2201/12753
摘要： An after develop inspection tool considers tool-to-tool variability when determining confidence score for wafers under inspection. A golden wafer is used to calculate a RGB signature as well as the slope of the individual RGB curves for different lamp intensities. These slopes are normalized in order to generate a compensation factor for red values and blue values within a signature. When a wafer is subsequently inspected at an ADI station using a different lamp, the test wafer RGB signature is likely captured at a different lamp intensity. Consequently, when comparing the signatures, the golden wafer RGB signature is adjusted by the compensation factors, based on the different lamp's intensity setting, and this adjusted RGB signature is then used to determine whether a defect exists on the test wafer.
摘要翻译：在确定检查中的晶片的置信度得分后，开发后的检查工具会考虑刀具对刀具的变异性。使用金色晶片来计算RGB特征以及不同灯泡强度的各个RGB曲线的斜率。这些斜率被归一化以便在签名中产生红色值和蓝色值的补偿因子。当使用不同的灯随后在ADI站检查晶片时，可能以不同的灯强度捕获测试晶片RGB特征。因此，当比较签名时，基于不同的灯的强度设置，通过补偿因子来调整金色晶片RGB签名，然后使用该调整的RGB签名来确定在测试晶片上是否存在缺陷。

2. 发明申请

US20050146716A1 Method and system to compensate for lamp intensity differences in a photolithographic inspection tool 失效
标题翻译：补偿光刻检测工具灯强度差异的方法和系统
公开(公告)号：US20050146716A1
公开(公告)日：2005-07-07
申请号：US10749887
申请日：2003-12-31
申请人： David Dixon , Lloyd Lee
发明人： David Dixon , Lloyd Lee
IPC分类号： G01N21/27 , G01N21/93 , G01N21/95 , G01N21/956 , G01N21/00
CPC分类号： G01N21/95607 , G01N21/278 , G01N21/93 , G01N21/9501 , G01N2021/8416 , G01N2201/0695 , G01N2201/12753
摘要： An after develop inspection tool considers tool-to-tool variability when determining confidence score for wafers under inspection. A golden wafer is used to calculate a RGB signature as well as the slope of the individual RGB curves for different lamp intensities. These slopes are normalized in order to generate a compensation factor for red values and blue values within a signature. When a wafer is subsequently inspected at an ADI station using a different lamp, the test wafer RGB signature is likely captured at a different lamp intensity. Consequently, when comparing the signatures, the golden wafer RGB signature is adjusted by the compensation factors, based on the different lamp's intensity setting, and this adjusted RGB signature is then used to determine whether a defect exists on the test wafer.
摘要翻译：在确定检查中的晶片的置信度得分后，开发后的检查工具会考虑刀具对刀具的变异性。使用金色晶片来计算RGB特征以及不同灯泡强度的各个RGB曲线的斜率。这些斜率被归一化以便在签名中产生红色值和蓝色值的补偿因子。当使用不同的灯随后在ADI站检查晶片时，可能以不同的灯强度捕获测试晶片RGB特征。因此，当比较签名时，基于不同的灯的强度设置，通过补偿因子来调整金色晶片RGB签名，然后使用该调整的RGB签名来确定在测试晶片上是否存在缺陷。

3. 发明申请

US20080218745A1 METHOD AND SYSTEM TO COMPENSATE FOR LAMP INTENSITY DIFFERENCES IN A PHOTOLITHOGRAPHIC INSPECTION TOOL 失效
标题翻译：补偿光刻检测工具中的强度差异的方法和系统
公开(公告)号：US20080218745A1
公开(公告)日：2008-09-11
申请号：US12101260
申请日：2008-04-11
申请人： David Dixon , Lloyd Lee
发明人： David Dixon , Lloyd Lee
IPC分类号： G01N21/00
CPC分类号： G01N21/95607 , G01N21/278 , G01N21/93 , G01N21/9501 , G01N2021/8416 , G01N2201/0695 , G01N2201/12753
摘要： An after develop inspection tool considers tool-to-tool variability when determining confidence score for wafers under inspection. A golden wafer is used to calculate a RGB signature as well as the slope of the individual RGB curves for different lamp intensities. These slopes are normalized in order to generate a compensation factor for red values and blue values within a signature. When a wafer is subsequently inspected at an ADI station using a different lamp, the test wafer RGB signature is likely captured at a different lamp intensity. Consequently, when comparing the signatures, the golden wafer RGB signature is adjusted by the compensation factors, based on the different lamp's intensity setting, and this adjusted RGB signature is then used to determine whether a defect exists on the test wafer.
摘要翻译：在确定检查中的晶片的置信度得分后，开发后的检查工具会考虑刀具对刀具的变异性。使用金色晶片来计算RGB特征以及不同灯泡强度的各个RGB曲线的斜率。这些斜率被归一化以便在签名中产生红色值和蓝色值的补偿因子。当使用不同的灯随后在ADI站检查晶片时，可能以不同的灯强度捕获测试晶片RGB特征。因此，当比较签名时，基于不同的灯的强度设置，通过补偿因子来调整金色晶片RGB签名，然后使用该调整的RGB签名来确定在测试晶片上是否存在缺陷。

4. 发明授权

US07359545B2 Method and system to compensate for lamp intensity differences in a photolithographic inspection tool 失效
标题翻译：补偿光刻检测工具灯强度差异的方法和系统
公开(公告)号：US07359545B2
公开(公告)日：2008-04-15
申请号：US10749887
申请日：2003-12-31
申请人： David Dixon , Lloyd Lee
发明人： David Dixon , Lloyd Lee
IPC分类号： G06K9/00
CPC分类号： G01N21/95607 , G01N21/278 , G01N21/93 , G01N21/9501 , G01N2021/8416 , G01N2201/0695 , G01N2201/12753
摘要： An after develop inspection tool considers tool-to-tool variability when determining confidence score for wafers under inspection. A golden wafer is used to calculate a RGB signature as well as the slope of the individual RGB curves for different lamp intensities. These slopes are normalized in order to generate a compensation factor for red values and blue values within a signature. When a wafer is subsequently inspected at an ADI station using a different lamp, the test wafer RGB signature is likely captured at a different lamp intensity. Consequently, when comparing the signatures, the golden wafer RGB signature is adjusted by the compensation factors, based on the different lamp's intensity setting, and this adjusted RGB signature is then used to determine whether a defect exists on the test wafer.
摘要翻译：在确定检查中的晶片的置信度得分后，开发后的检查工具会考虑刀具对刀具的变异性。使用金色晶片来计算RGB特征以及不同灯泡强度的各个RGB曲线的斜率。这些斜率被归一化以便在签名中产生红色值和蓝色值的补偿因子。当使用不同的灯随后在ADI站检查晶片时，可能以不同的灯强度捕获测试晶片RGB特征。因此，当比较签名时，基于不同的灯的强度设置，通过补偿因子来调整金色晶片RGB签名，然后使用该调整的RGB签名来确定在测试晶片上是否存在缺陷。

5. 发明授权

US3937850A Method of hollowing out an article of food 失效
标题翻译：遵循食品的方法
公开(公告)号：US3937850A
公开(公告)日：1976-02-10
申请号：US403575
申请日：1973-10-04
申请人： Bahia Rashid Farha , Lloyd Lee
发明人： Bahia Rashid Farha , Lloyd Lee
IPC分类号： A23N4/12 , A23P1/00
CPC分类号： A23N4/12
摘要： Method for hollowing out an article of food such as a fruit or vegetable so that a shell of substantially uniform predetermined thickness is formed. A rotating knife is rotated about its axis, while an end area of an article of food is guided with a curved guide member against the rotating knife. The guide member loosely supports the food for rotation and translation about its longitudinal axis while maintaining the knife a predetermined distance from the surface of the food. The distance between the guide and the blade is adjustable to control the thickness of the shell.

6. 发明授权

US07625680B2 Method of real time dynamic CD control 失效
标题翻译：实时动态CD控制方法
公开(公告)号：US07625680B2
公开(公告)日：2009-12-01
申请号：US11536991
申请日：2006-09-29
申请人： Lloyd Lee
发明人： Lloyd Lee
IPC分类号： G03C5/00 , H05B3/68
CPC分类号： G01N21/4788
摘要： A method of real time dynamic CD control in a system for heat-treating resist coated wafers on a hotplate. The method includes establishing a temperature profile for a hotplate surface, where the hotplate surface is divided into a plurality of temperature control zones, and sequentially heat-treating the resist coated wafers on the hotplate. The method further includes obtaining CD metrology data from test areas on the heat-treated wafers, where different groups of test areas are selected for two or more of the heat-treated wafers. A CD metrology data map is constructed using the CD metrology data and an adjusted temperature profile is established for the hotplate surface using the CD metrology data. Additional wafers are then heat-treated on the hotplate. The method also may be applied to heat-treating resist coated wafers on a plurality of hotplates.
摘要翻译：一种用于在电热板上热处理抗蚀涂层晶片的系统中的实时动态CD控制的方法。该方法包括建立用于加热板表面的温度分布，其中将热板表面分成多个温度控制区，并依次热处理加热板上的抗蚀剂涂覆的晶片。该方法还包括从经热处理的晶片上的测试区域获得CD测量数据，其中为两个或更多个经热处理的晶片选择不同组的测试区域。使用CD测量数据构建CD测量数据图，并使用CD测量数据为热板表面建立调整的温度曲线。然后在电热板上对另外的晶片进行热处理。该方法还可以应用于在多个电镀板上热处理抗蚀剂涂覆的晶片。

7. 发明申请

US20080081271A1 METHOD OF REAL TIME DYNAMIC CD CONTROL 失效
标题翻译：实时动态CD控制方法
公开(公告)号：US20080081271A1
公开(公告)日：2008-04-03
申请号：US11536991
申请日：2006-09-29
申请人： Lloyd Lee
发明人： Lloyd Lee
IPC分类号： G03F7/26
CPC分类号： G01N21/4788
摘要： A method of real time dynamic CD control in a system for heat-treating resist coated wafers on a hotplate. The method includes establishing a temperature profile for a hotplate surface, where the hotplate surface is divided into a plurality of temperature control zones, and sequentially heat-treating the resist coated wafers on the hotplate. The method further includes obtaining CD metrology data from test areas on the heat-treated wafers, where different groups of test areas are selected for two or more of the heat-treated wafers. A CD metrology data map is constructed using the CD metrology data and an adjusted temperature profile is established for the hotplate surface using the CD metrology data. Additional wafers are then heat-treated on the hotplate. The method also may be applied to heat-treating resist coated wafers on a plurality of hotplates.
摘要翻译：一种用于在电热板上热处理抗蚀涂层晶片的系统中的实时动态CD控制的方法。该方法包括建立用于加热板表面的温度分布，其中将热板表面分成多个温度控制区，并且依次热处理加热板上的抗蚀剂涂覆的晶片。该方法还包括从经热处理的晶片上的测试区域获得CD测量数据，其中为两个或更多个经热处理的晶片选择不同组的测试区域。使用CD测量数据构建CD测量数据图，并使用CD测量数据为热板表面建立调整的温度曲线。然后在电热板上对另外的晶片进行热处理。该方法还可以应用于在多个电镀板上热处理抗蚀剂涂覆的晶片。

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