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1. 发明申请

US20110109998A1 RECORDING HEAD WITH TILTED ORIENTATION 有权
标题翻译：记录头与倾斜方向
公开(公告)号：US20110109998A1
公开(公告)日：2011-05-12
申请号：US12614275
申请日：2009-11-06
申请人： David Berman , Robert G. Biskeborn , Michel Despont , Philipp Herget , Wayne Isami Imaino , Pierre-Olivier Jubert , Peter V. Koeppe , Chandrasekhar Narayan
发明人： David Berman , Robert G. Biskeborn , Michel Despont , Philipp Herget , Wayne Isami Imaino , Pierre-Olivier Jubert , Peter V. Koeppe , Chandrasekhar Narayan
IPC分类号： G11B5/33 , B05D5/12
CPC分类号： G11B5/3163 , G11B5/00826 , G11B5/398
摘要： In one embodiment, a read sensor for a recording head for a magnetic media storage system, has first and second shields, and a magneto-resistive sensor disposed between and shielded by the first and second shields in which the sensing axis of the sensor is tilted with respect to the recording surface of the head. In one embodiment, the sensing axis is oriented at an angle between 10 and 60 degrees with respect to the normal of the recording surface. Other embodiments are described and claimed.
摘要翻译：在一个实施例中，用于磁性介质存储系统的记录头的读取传感器具有第一和第二屏蔽以及设置在第一和第二屏蔽之间并被传感器的感测轴倾斜的屏蔽的磁阻传感器相对于头部的记录表面。在一个实施例中，感测轴相对于记录表面的法线定向成10度至60度的角度。描述和要求保护其他实施例。

2. 发明授权

US08416537B2 Recording head with tilted orientation 有权
标题翻译：记录头倾斜方向
公开(公告)号：US08416537B2
公开(公告)日：2013-04-09
申请号：US12614275
申请日：2009-11-06
申请人： David Berman , Robert G. Biskeborn , Michel Despont , Philipp Herget , Wayne Isami Imaino , Pierre-Olivier Jubert , Peter V. Koeppe , Chandrasekhar Narayan
发明人： David Berman , Robert G. Biskeborn , Michel Despont , Philipp Herget , Wayne Isami Imaino , Pierre-Olivier Jubert , Peter V. Koeppe , Chandrasekhar Narayan
IPC分类号： G11B5/39
CPC分类号： G11B5/3163 , G11B5/00826 , G11B5/398
摘要： In one embodiment, a read sensor for a recording head for a magnetic media storage system, has first and second shields, and a magneto-resistive sensor disposed between and shielded by the first and second shields in which the sensing axis of the sensor is tilted with respect to the recording surface of the head. In one embodiment, the sensing axis is oriented at an angle between 10 and 60 degrees with respect to the normal of the recording surface. Other embodiments are described and claimed.
摘要翻译：在一个实施例中，用于磁性介质存储系统的记录头的读取传感器具有第一和第二屏蔽以及设置在第一和第二屏蔽之间并被传感器的感测轴倾斜的屏蔽的磁阻传感器相对于头部的记录表面。在一个实施例中，感测轴相对于记录表面的法线定向成10度至60度的角度。描述和要求保护其他实施例。

3. 发明申请

US20120260496A1 METHODS FOR FABRICATING MAGNETIC TRANSDUCERS USING POST-DEPOSITION TILTING 有权
标题翻译：使用沉积后倾斜制造磁性传感器的方法
公开(公告)号：US20120260496A1
公开(公告)日：2012-10-18
申请号：US13532716
申请日：2012-06-25
申请人： Robert Glenn Biskeborn , Laurent Dellmann , Michel Despont , Philipp Herget , Pierre-Olivier Jubert
发明人： Robert Glenn Biskeborn , Laurent Dellmann , Michel Despont , Philipp Herget , Pierre-Olivier Jubert
IPC分类号： G11B5/127
CPC分类号： G11B5/00821 , G11B5/3163 , G11B5/3906 , H04R31/00 , Y10T29/49021 , Y10T29/49032 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048
摘要： In one general embodiment, a method is provided for fabricating magnetic structures using post-deposition tilting. A thin film magnetic transducer structure is formed on a substantially planar portion of a substrate such that a plane of deposition of the thin film transducer structure is substantially parallel to a plane of the substrate. Additionally, the thin film transducer structure is caused to tilt at an angle relative to the plane of the substrate. The thin film transducer is fixed at the angle after being tilted.
摘要翻译：在一个一般实施例中，提供了一种使用后沉积倾斜来制造磁性结构的方法。薄膜换能器结构形成在基板的基本上平面的部分上，使得薄膜换能器结构的沉积平面基本上平行于基板的平面。此外，使薄膜换能器结构相对于基板的平面成一定角度倾斜。薄膜换能器在倾斜后固定成角度。

4. 发明授权

US08240024B2 Methods for fabricating magnetic transducers using post-deposition tilting 有权
标题翻译：使用后沉积倾斜制造磁换能器的方法
公开(公告)号：US08240024B2
公开(公告)日：2012-08-14
申请号：US12547224
申请日：2009-08-25
申请人： Robert Glenn Biskeborn , Laurent Dellmann , Michel Despont , Philipp Herget , Pierre-Olivier Jubert
发明人： Robert Glenn Biskeborn , Laurent Dellmann , Michel Despont , Philipp Herget , Pierre-Olivier Jubert
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/00821 , G11B5/3163 , G11B5/3906 , H04R31/00 , Y10T29/49021 , Y10T29/49032 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048
摘要： In one general embodiment, a method for fabricating magnetic structures using post-deposition tilting includes forming a thin film magnetic transducer structure on a substantially planar portion of a substrate such that a plane of deposition of the thin film transducer structure is substantially parallel to a plane of the substrate. Additionally, the thin film transducer structure is caused to tilt at an angle relative to the plane of the substrate. The thin film transducer is fixed at the angle after being tilted.
摘要翻译：在一个一般实施例中，使用后沉积倾斜制造磁性结构的方法包括在基板的基本上平面的部分上形成薄膜磁换能器结构，使得薄膜换能器结构的沉积平面基本上平行于平面的基底。此外，使薄膜换能器结构相对于基板的平面成一定角度倾斜。薄膜换能器在倾斜后固定成角度。

5. 发明授权

US09230564B2 Methods for fabricating magnetic transducers using post-deposition tilting 有权
标题翻译：使用后沉积倾斜制造磁换能器的方法
公开(公告)号：US09230564B2
公开(公告)日：2016-01-05
申请号：US13532716
申请日：2012-06-25
申请人： Robert Glenn Biskeborn , Laurent Dellmann , Michel Despont , Philipp Herget , Pierre-Olivier Jubert
发明人： Robert Glenn Biskeborn , Laurent Dellmann , Michel Despont , Philipp Herget , Pierre-Olivier Jubert
IPC分类号： G11B5/127 , H04R31/00 , G11B5/008 , G11B5/31 , G11B5/39
CPC分类号： G11B5/00821 , G11B5/3163 , G11B5/3906 , H04R31/00 , Y10T29/49021 , Y10T29/49032 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048
摘要： In one general embodiment, a method is provided for fabricating magnetic structures using post-deposition tilting. A thin film magnetic transducer structure is formed on a substantially planar portion of a substrate such that a plane of deposition of the thin film transducer structure is substantially parallel to a plane of the substrate. Additionally, the thin film transducer structure is caused to tilt at an angle relative to the plane of the substrate. The thin film transducer is fixed at the angle after being tilted.
摘要翻译：在一个一般实施例中，提供了一种使用后沉积倾斜来制造磁性结构的方法。薄膜换能器结构形成在基板的基本上平面的部分上，使得薄膜换能器结构的沉积平面基本上平行于基板的平面。此外，使薄膜换能器结构相对于基板的平面成一定角度倾斜。薄膜换能器在倾斜后固定成角度。

6. 发明授权

US08957378B2 Nano-tip spacers for precise gap control and thermal isolation in MEMS structures 有权
标题翻译：用于MEMS结构中的精确间隙控制和热隔离的纳米尖端间隔物
公开(公告)号：US08957378B2
公开(公告)日：2015-02-17
申请号：US13525397
申请日：2012-06-18
申请人： Dan Corcos , Michel Despont , Danny Elad , Bernd Gotsmann , Lukas Kull , Thomas E. Morf
发明人： Dan Corcos , Michel Despont , Danny Elad , Bernd Gotsmann , Lukas Kull , Thomas E. Morf
IPC分类号： G01J5/02 , G01J5/34 , G01J5/08 , G01J5/22 , B81B3/00
CPC分类号： G01J5/34 , B81B3/0081 , G01J5/0235 , G01J5/024 , G01J5/0837 , G01J5/22
摘要： A THz radiation detector comprising a vertical antenna separated from a suspended platform by an isolating thermal air gap for concentrating THz radiation energy into a smaller suspended MEMS platform upon which a thermal sensor element is located. THz photon energy is converted into electrical energy via a thermally isolated air gap between plates of a coupling capacitor separated by a plurality of nano-tip spacers that determine the gap distance. The capacitor couples energy from the antenna to the thermal sensor.
摘要翻译：一种太赫兹辐射检测器，包括通过隔离热空气间隙与悬浮平台分离的垂直天线，用于将太赫兹辐射能量集中到位于热传感器元件的较小悬置MEMS平台上。太赫兹光子能量通过由多个确定间隙距离的多个纳米尖端间隔物隔开的耦合电容器的板之间的隔热气隙转换成电能。电容器将能量从天线耦合到热传感器。

7. 发明授权

US08847079B2 Method for producing an integrated device 有权
标题翻译：集成装置的制造方法
公开(公告)号：US08847079B2
公开(公告)日：2014-09-30
申请号：US13470491
申请日：2012-05-14
申请人： Laurent A. Dellmann , Michel Despont , Ute Drechsler , Roland M. Guerre
发明人： Laurent A. Dellmann , Michel Despont , Ute Drechsler , Roland M. Guerre
IPC分类号： H05K1/00 , H05K1/16 , B81C1/00 , B81C3/00
CPC分类号： B81C1/00373 , B81C3/008 , B81C2201/0185 , H01L24/95 , Y10T29/49117 , Y10T29/49126 , Y10T29/4913 , Y10T29/49144 , Y10T29/5313
摘要： An article for producing an integrated device includes a deformable layer and one or more components releasably attached on one surface of the deformable layer.
摘要翻译：用于制造集成装置的制品包括可变形层和可释放地附接在可变形层的一个表面上的一个或多个部件。

8. 发明授权

US08387160B2 Scanning probe-based lithography method 失效
标题翻译：扫描探针型光刻法
公开(公告)号：US08387160B2
公开(公告)日：2013-02-26
申请号：US12899817
申请日：2010-10-07
申请人： Michel Despont , Urs T. Duerig , Jane E. Frommer , Bernd W. Gotsmann , James L. Hedrick , Craig Jon Hawker , Robert D. Miller
发明人： Michel Despont , Urs T. Duerig , Jane E. Frommer , Bernd W. Gotsmann , James L. Hedrick , Craig Jon Hawker , Robert D. Miller
IPC分类号： G01Q60/24
CPC分类号： G03F7/0002 , G01Q80/00 , Y10S977/849 , Y10S977/85 , Y10S977/851 , Y10S977/855 , Y10S977/857
摘要： A resist medium in which features are lithographically produced by scanning a surface of the medium with an AFM probe positioned in contact therewith. The resist medium comprises a substrate; and a polymer resist layer within which features are produced by mechanical action of the probe. The polymer contains thermally reversible crosslinkages. Also disclosed are methods that generally includes scanning a surface of the polymer resist layer with an AFM probe positioned in contact with the resist layer, wherein heating the probe and a squashing-type mechanical action of the probe produces features in the layer by thermally reversing the crosslinkages.
摘要翻译：抗蚀剂介质，其特征是通过用与其接触的AFM探针扫描介质的表面来光刻制造。抗蚀剂介质包括基底; 以及聚合物抗蚀剂层，其中通过探针的机械作用产生特征。聚合物含有热可逆交联。还公开了通常包括用定位成与抗蚀剂层接触的AFM探针扫描聚合物抗蚀剂层的表面的方法，其中加热探针和探针的挤压型机械作用通过热反转来产生该层中的特征交联。

9. 发明授权

US08327461B2 High-speed scanning probe microscope 有权
标题翻译：高速扫描探针显微镜
公开(公告)号：US08327461B2
公开(公告)日：2012-12-04
申请号：US13146355
申请日：2010-01-15
申请人： Harish Bhaskaran , Michel Despont , Abu Sebastian
发明人： Harish Bhaskaran , Michel Despont , Abu Sebastian
IPC分类号： G01Q60/14 , G01N13/16 , G01N13/10
CPC分类号： G01Q60/16
摘要： The invention is directed to a probe for scanning probe microscopy. The probe 20 comprises a tunnel-current conducting part 30 and a tunnel-current insulating part 40. The said parts are configured such that the insulating part determines a minimal distance between the conducting part 30 and the sample surface. The invention may further concern a scanning probe microscope having such a probe, and a corresponding scanning probe microscopy method. Since the distance to the sample surface 100 is actually determined by the insulating part 40, controlling the vertical position of the probe 20 relative to the sample surface is easily and rapidly achieved. The configuration of the parts allows for a fast scan of the sample surface, whereby high-speed imaging can be achieved. Further, embodiments allow for topographical variations to be accurately captured through tunneling effect.
摘要翻译：本发明涉及用于扫描探针显微镜的探针。探针20包括隧道电流传导部分30和隧道电流绝缘部分40.所述部分被构造成使得绝缘部分确定导电部分30和样品表面之间的最小距离。本发明还可以涉及具有这种探针的扫描探针显微镜和相应的扫描探针显微镜方法。由于到达样品表面100的距离实际上由绝缘部件40确定，因此容易且快速地实现了探针20相对于样品表面的垂直位置的控制。部件的构造允许对样品表面进行快速扫描，由此可以实现高速成像。此外，实施例允许通过隧道效应准确地捕获地形变化。

10. 发明申请

US20120222294A1 METHOD FOR PRODUCING AN INTEGRATED DEVICE 有权
标题翻译：用于生产集成装置的方法
公开(公告)号：US20120222294A1
公开(公告)日：2012-09-06
申请号：US13470491
申请日：2012-05-14
申请人： Laurent A. Dellmann , Michel Despont , Ute Drechsler , Roland M. Guerre
发明人： Laurent A. Dellmann , Michel Despont , Ute Drechsler , Roland M. Guerre
IPC分类号： H05K13/04
CPC分类号： B81C1/00373 , B81C3/008 , B81C2201/0185 , H01L24/95 , Y10T29/49117 , Y10T29/49126 , Y10T29/4913 , Y10T29/49144 , Y10T29/5313
摘要： An article for producing an integrated device includes a deformable layer and one or more components releasably attached on one surface of the deformable layer.
摘要翻译：用于制造集成装置的制品包括可变形层和可释放地附接在可变形层的一个表面上的一个或多个部件。

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