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1. 发明授权

US08269241B2 Light emitting diodes including barrier layers/sublayers and manufacturing methods therefor 有权
标题翻译：包括阻挡层/子层的发光二极管及其制造方法
公开(公告)号：US08269241B2
公开(公告)日：2012-09-18
申请号：US12564458
申请日：2009-09-22
申请人： David B. Slater, Jr. , Bradley E. Williams , Peter S. Andrews , John A. Edmond , Scott T. Allen
发明人： David B. Slater, Jr. , Bradley E. Williams , Peter S. Andrews , John A. Edmond , Scott T. Allen
IPC分类号： H01L33/00
CPC分类号： H01L33/60 , H01L33/20 , H01L33/32 , H01L33/405 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/01057 , H01L2924/12041 , H01L2924/00
摘要： Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.
摘要翻译：诸如发光二极管的半导体发光器件包括衬底，在衬底上的包括诸如发光二极管区域的发光区域的外延区域和在外延区域上包括反射器层的多层导电堆叠。阻挡层设置在反射器层上并在反射器层的侧壁上延伸。多层导电叠层还可以包括在反射器和外延区之间的欧姆层。阻挡层进一步在欧姆层的侧壁上延伸。阻挡层还可以延伸到多层导电叠层外的外延区域上。阻挡层可以制成一系列交替的第一和第二子层。

2. 发明授权

US07211833B2 Light emitting diodes including barrier layers/sublayers 有权
标题翻译：包括阻挡层/子层的发光二极管
公开(公告)号：US07211833B2
公开(公告)日：2007-05-01
申请号：US11039566
申请日：2005-01-20
申请人： David B. Slater, Jr. , Bradley E. Williams , Peter S. Andrews , John A. Edmond , Scott T. Allen
发明人： David B. Slater, Jr. , Bradley E. Williams , Peter S. Andrews , John A. Edmond , Scott T. Allen
IPC分类号： H01L33/00
CPC分类号： H01L33/60 , H01L33/20 , H01L33/32 , H01L33/405 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/01057 , H01L2924/12041 , H01L2924/00
摘要： Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.
摘要翻译：诸如发光二极管的半导体发光器件包括衬底，在衬底上的包括诸如发光二极管区域的发光区域的外延区域和在外延区域上包括反射器层的多层导电堆叠。阻挡层设置在反射器层上并在反射器层的侧壁上延伸。多层导电叠层还可以包括在反射器和外延区之间的欧姆层。阻挡层进一步在欧姆层的侧壁上延伸。阻挡层还可以延伸到多层导电叠层外的外延区域上。阻挡层可以制成一系列交替的第一和第二子层。

3. 发明授权

US07611915B2 Methods of manufacturing light emitting diodes including barrier layers/sublayers 有权
标题翻译：制造包括阻挡层/子层的发光二极管的方法
公开(公告)号：US07611915B2
公开(公告)日：2009-11-03
申请号：US11688605
申请日：2007-03-20
申请人： David B. Slater, Jr. , Bradley E. Williams , Peter S. Andrews , John A. Edmond , Scott T. Allen
发明人： David B. Slater, Jr. , Bradley E. Williams , Peter S. Andrews , John A. Edmond , Scott T. Allen
IPC分类号： H01L21/00
CPC分类号： H01L33/60 , H01L33/20 , H01L33/32 , H01L33/405 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/01057 , H01L2924/12041 , H01L2924/00
摘要： Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.
摘要翻译：诸如发光二极管的半导体发光器件包括衬底，在衬底上的包括诸如发光二极管区域的发光区域的外延区域和在外延区域上包括反射器层的多层导电堆叠。阻挡层设置在反射器层上并在反射器层的侧壁上延伸。多层导电叠层还可以包括在反射器和外延区之间的欧姆层。阻挡层进一步在欧姆层的侧壁上延伸。阻挡层还可以延伸到多层导电叠层外的外延区域上。阻挡层可以制成一系列交替的第一和第二子层。

4. 发明申请

US20120305939A1 LIGHT EMITTING DIODES INCLUDING BARRIER SUBLAYERS 有权
标题翻译：发光二极体，包括障碍物层
公开(公告)号：US20120305939A1
公开(公告)日：2012-12-06
申请号：US13586642
申请日：2012-08-15
申请人： David B. Slater, JR. , Bradley E. Williams , Peter S. Andrews , John A. Edmond , Scott T. Allen
发明人： David B. Slater, JR. , Bradley E. Williams , Peter S. Andrews , John A. Edmond , Scott T. Allen
IPC分类号： H01L33/32
CPC分类号： H01L33/60 , H01L33/20 , H01L33/32 , H01L33/405 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/01057 , H01L2924/12041 , H01L2924/00
摘要： Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.
摘要翻译：诸如发光二极管的半导体发光器件包括衬底，在衬底上的包括诸如发光二极管区域的发光区域的外延区域和在外延区域上包括反射器层的多层导电堆叠。阻挡层设置在反射器层上并在反射器层的侧壁上延伸。多层导电叠层还可以包括在反射器和外延区之间的欧姆层。阻挡层进一步在欧姆层的侧壁上延伸。阻挡层还可以延伸到多层导电叠层外的外延区域上。阻挡层可以被制造成一系列交替的第一和第二子层。

5. 发明申请

US20100006883A1 LIGHT EMITTING DIODES INCLUDING BARRIER LAYERS/SUBLAYERS AND MANUFACTURING METHODS THEREFOR 有权
标题翻译：发光二极管，包括障碍层/子层及其制造方法
公开(公告)号：US20100006883A1
公开(公告)日：2010-01-14
申请号：US12564458
申请日：2009-09-22
申请人： David B. Slater, JR. , Bradley E. Williams , Peter S. Andrews , John A. Edmond , Scott T. Allen
发明人： David B. Slater, JR. , Bradley E. Williams , Peter S. Andrews , John A. Edmond , Scott T. Allen
IPC分类号： H01L33/00
CPC分类号： H01L33/60 , H01L33/20 , H01L33/32 , H01L33/405 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/01057 , H01L2924/12041 , H01L2924/00
摘要： Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.
摘要翻译：诸如发光二极管的半导体发光器件包括衬底，在衬底上的包括诸如发光二极管区域的发光区域的外延区域和在外延区域上包括反射器层的多层导电堆叠。阻挡层设置在反射器层上并在反射器层的侧壁上延伸。多层导电叠层还可以包括在反射器和外延区之间的欧姆层。阻挡层进一步在欧姆层的侧壁上延伸。阻挡层还可以延伸到多层导电叠层外的外延区域上。阻挡层可以制成一系列交替的第一和第二子层。

6. 发明授权

US08604502B2 Light emitting diodes including barrier sublayers 有权
标题翻译：发光二极管包括屏障子层
公开(公告)号：US08604502B2
公开(公告)日：2013-12-10
申请号：US13586642
申请日：2012-08-15
申请人： David B. Slater, Jr. , Bradley E. Williams , Peter S. Andrews , John A. Edmond , Scott T. Allen
发明人： David B. Slater, Jr. , Bradley E. Williams , Peter S. Andrews , John A. Edmond , Scott T. Allen
IPC分类号： H01L33/00
CPC分类号： H01L33/60 , H01L33/20 , H01L33/32 , H01L33/405 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/01057 , H01L2924/12041 , H01L2924/00
摘要： Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.
摘要翻译：诸如发光二极管的半导体发光器件包括衬底，在衬底上的包括诸如发光二极管区域的发光区域的外延区域和在外延区域上包括反射器层的多层导电堆叠。阻挡层设置在反射器层上并在反射器层的侧壁上延伸。多层导电叠层还可以包括在反射器和外延区之间的欧姆层。阻挡层进一步在欧姆层的侧壁上延伸。阻挡层还可以延伸到多层导电叠层外的外延区域上。阻挡层可以制成一系列交替的第一和第二子层。

7. 发明授权

US07037742B2 Methods of fabricating light emitting devices using mesa regions and passivation layers 有权
标题翻译：使用台面区域和钝化层制造发光器件的方法
公开(公告)号：US07037742B2
公开(公告)日：2006-05-02
申请号：US10825647
申请日：2004-04-15
申请人： David B. Slater, Jr. , Bradley E. Williams , Peter S. Andrews
发明人： David B. Slater, Jr. , Bradley E. Williams , Peter S. Andrews
IPC分类号： H01L21/00
CPC分类号： H01L33/20 , H01L24/32 , H01L33/405 , H01L33/62 , H01L2924/01322 , H01L2924/12032 , H01L2924/12041 , H01L2924/181 , H01L2924/00
摘要： Light emitting diodes include a substrate, an epitaxial region on the substrate that includes therein a diode region and a multilayer conductive stack on the epitaxial region opposite the substrate. A passivation layer extends at least partially on the multilayer conductive stack opposite the epitaxial region, to define a bonding region on the multilayer conductive stack opposite the epitaxial region. The passivation layer also extends across the multilayer conductive stack, across the epitaxial region and onto the substrate. The multilayer conductive stack can include an ohmic layer on the epitaxial region opposite the substrate, a reflector layer on the ohmic layer opposite the epitaxial region and a tin barrier layer on the reflector layer opposite the ohmic layer. An adhesion layer also may be provided on the tin barrier layer opposite the reflector layer. A bonding layer also may be provided on the adhesion layer opposite the tin barrier layer. A submount and a bond between the bonding layer and the submount also may be provided.
摘要翻译：发光二极管包括基板，在其上包括二极管区域的基板上的外延区域和与基板相对的外延区域上的多层导电叠层。钝化层至少部分地延伸在与外延区域相对的多层导电堆叠上，以限定与外延区域相对的多层导电堆叠上的结合区域。钝化层也跨过多层导电叠层延伸穿过外延区域并延伸到衬底上。多层导电叠层可以包括在与衬底相对的外延区域上的欧姆层，在与外延区域相对的欧姆层上的反射器层和与欧姆层相对的反射器层上的锡阻挡层。也可以在与反射层相对的锡阻挡层上设置粘合层。也可以在与锡阻挡层相对的粘附层上设置接合层。还可以提供接合层和底座之间的基座和接合。

8. 发明授权

US06740906B2 Light emitting diodes including modifications for submount bonding 有权
标题翻译：发光二极管，包括用于底座接合的修改
公开(公告)号：US06740906B2
公开(公告)日：2004-05-25
申请号：US10200244
申请日：2002-07-22
申请人： David B. Slater, Jr. , Bradley E. Williams , Peter S. Andrews
发明人： David B. Slater, Jr. , Bradley E. Williams , Peter S. Andrews
IPC分类号： H01L3300
CPC分类号： H01L33/20 , H01L24/32 , H01L33/405 , H01L33/62 , H01L2924/01322 , H01L2924/12032 , H01L2924/12041 , H01L2924/181 , H01L2924/00
摘要： Light emitting diodes include a substrate, an epitaxial region on the substrate that includes therein a diode region and a multilayer conductive stack on the epitaxial region opposite the substrate. A passivation layer extends at least partially on the multilayer conductive stack opposite the epitaxial region, to define a bonding region on the multilayer conductive stack opposite the epitaxial region. The passivation layer also extends across the multilayer conductive stack, across the epitaxial region and onto the substrate. The multilayer conductive stack can include an ohmic layer on the epitaxial region opposite the substrate, a reflector layer on the ohmic layer opposite the epitaxial region and a tin barrier layer on the reflector layer opposite the ohmic layer. An adhesion layer also may be provided on the tin barrier layer opposite the reflector layer. A bonding layer also may be provided on the adhesion layer opposite the tin barrier layer. A submount and a bond between the bonding layer and the submount also may be provided.
摘要翻译：发光二极管包括基板，在其上包括二极管区域的基板上的外延区域和与基板相对的外延区域上的多层导电叠层。钝化层至少部分地延伸在与外延区域相对的多层导电堆叠上，以限定与外延区域相对的多层导电堆叠上的结合区域。钝化层也跨过多层导电叠层延伸穿过外延区域并延伸到衬底上。多层导电叠层可以包括在与衬底相对的外延区域上的欧姆层，在与外延区域相对的欧姆层上的反射器层和与欧姆层相对的反射器层上的锡阻挡层。也可以在与反射层相对的锡阻挡层上设置粘合层。也可以在与锡阻挡层相对的粘附层上设置接合层。还可以提供接合层和底座之间的基座和接合。

9. 发明授权

US07608860B2 Light emitting devices suitable for flip-chip bonding 有权
标题翻译：适用于倒装芯片贴装的发光器件
公开(公告)号：US07608860B2
公开(公告)日：2009-10-27
申请号：US11772419
申请日：2007-07-02
申请人： David B. Slater, Jr. , Jayesh Bharathan , John Edmond , Mark Raffetto , Anwar Mohammed , Peter S. Andrews , Gerald H. Negley
发明人： David B. Slater, Jr. , Jayesh Bharathan , John Edmond , Mark Raffetto , Anwar Mohammed , Peter S. Andrews , Gerald H. Negley
IPC分类号： H01L29/267
CPC分类号： H01L33/62 , H01L33/38 , H01L2224/04026 , H01L2224/26175 , H01L2224/291 , H01L2224/32245 , H01L2224/48463 , H01L2224/73265 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/12032 , H01L2924/12041 , H01L2924/00014 , H01L2924/014 , H01L2924/00
摘要： Light emitting device die having a mesa configuration on a substrate and an electrode on the mesa are attached to a submount in a flip-chip configuration by forming predefined pattern of conductive die attach material on at least one of the electrode and the submount and mounting the light emitting device die to the submount. The predefined pattern of conductive die attach material is selected so as to prevent the conductive die attach material from contacting regions of having opposite conductivity types when the light emitting device die is mounted to the submount. The predefined pattern of conductive die attach material may provide a volume of die attach material that is less than a volume defined by an area of the electrode and a distance between the electrode and the submount. Light emitting device dies having predefined patterns of conductive die attach material are also provided. Light emitting devices having a gallium nitride based light emitting region on a substrate, such as a silicon carbide substrate, may also be mounted in a flip-chip configuration by mounting an electrode of the gallium nitride based light emitting region to a submount utilizing a B-stage curable die epoxy. Light emitting device dies having a B-stage curable die epoxy are also provided.
摘要翻译：通过在电极和底座中的至少一个上形成预定图案的导电芯片附着材料，并将其安装在基板上，并将底板上的电极和底板上的电极的底板配置在倒装芯片结构的底座上，发光器件死到底座。选择导电芯片附着材料的预定图案，以便当发光器件裸片安装到底座时，防止导电芯片附着材料接触具有相反导电类型的区域。导电芯片附接材料的预定图案可以提供小于由电极区域限定的体积以及电极和底座之间的距离的管芯附着材料的体积。还提供具有预定图案的导电芯片附着材料的发光器件裸片。在碳化硅基板等基板上具有氮化镓系发光区域的发光元件也可以通过将氮化镓系发光区域的电极安装在利用B的基板的倒装芯片配置中级环氧树脂。还提供了具有B级可固化模具环氧树脂的发光器件模具。

10. 发明授权

US07147739B2 Systems for assembling components on submounts and methods therefor 有权
公开(公告)号：US07147739B2
公开(公告)日：2006-12-12
申请号：US10325616
申请日：2002-12-20
申请人： Norbert Hiller , Peter S. Andrews , David B. Slater, Jr. , Gerald H. Negley
发明人： Norbert Hiller , Peter S. Andrews , David B. Slater, Jr. , Gerald H. Negley
IPC分类号： B32B37/00 , H05K13/00 , H01L21/00
CPC分类号： H01L21/67144 , H01L21/67132 , Y10T29/5313 , Y10T29/53174 , Y10T29/53178 , Y10T156/1089 , Y10T156/1097 , Y10T156/1707 , Y10T156/1712 , Y10T156/1734 , Y10T156/1744 , Y10T156/1911 , Y10T156/1978
摘要： A component assembly system is provided that includes a longitudinally elongated tape carrier, a longitudinally elongated submount carrier, and an assembly machine. A plurality of components may be attached to the tape carrier. The assembly machine is adapted to receiving the tape carrier, with the components attached thereto, and to receive the submount carrier. The assembly machine is further adapted to bring the tape carrier in close proximity to the submount carrier, and to attach the components to the submounts on the submount carrier.

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