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1. 发明授权

US5232549A Spacers for field emission display fabricated via self-aligned high energy ablation 失效
标题翻译：用于通过自对准高能量消融制造的场发射显示的间隔物
公开(公告)号：US5232549A
公开(公告)日：1993-08-03
申请号：US869348
申请日：1992-04-14
申请人： David A. Cathey , Chris C. Yu , Trung T. Doan , Tyler A. Lowrey , J. Brett Rolfson
发明人： David A. Cathey , Chris C. Yu , Trung T. Doan , Tyler A. Lowrey , J. Brett Rolfson
IPC分类号： H01J9/24 , G03F7/00 , H01J9/18 , H01J31/12
CPC分类号： H01J9/242 , G03F7/0007 , H01J31/123 , H01J9/185 , H01J2329/8625 , H01J2329/864
摘要： Fabrication of spacer supports for use in flat panel displays through a process which involves 1) depositing an insulating material on an electrode plate, 2) optionally, patterning a reflective material superjacent the insulating material, 3) irradiating the electrode plate, and thereby removing the exposed insulating material, 4) optionally, removing the reflective material, and thereby exposing the remaining insulative material which will serve as the spacer supports, after which the plate can be aligned with a complementary electrode plate, and a vacuum formed therebetween.
摘要翻译：通过涉及1）在电极板上沉积绝缘材料的方法制造用于平板显示器的间隔支架，2）可选地，在绝缘材料之上图案化反射材料，3）照射电极板，从而去除暴露的绝缘材料，4）任选地，去除反射材料，从而暴露作为间隔件支撑件的剩余绝缘材料，之后可以将板与互补电极板对准，并在其间形成真空。

2. 发明授权

US5372973A Method to form self-aligned gate structures around cold cathode emitter tips using chemical mechanical polishing technology 失效
标题翻译：使用化学机械抛光技术在冷阴极发射器尖端周围形成自对准栅极结构的方法
公开(公告)号：US5372973A
公开(公告)日：1994-12-13
申请号：US53794
申请日：1993-04-27
申请人： Trung T. Doan , J. Brett Rolfson , Tyler A. Lowrey , David A. Cathey
发明人： Trung T. Doan , J. Brett Rolfson , Tyler A. Lowrey , David A. Cathey
IPC分类号： H01J1/304 , H01J9/02 , H01L21/3105 , H01L21/465
CPC分类号： H01J9/025 , H01L21/31053 , H01J2201/30426 , H01J2201/319 , H01J2209/0226
摘要： A chemical mechanical polishing process for the formation of self-aligned gate structures surrounding an electron emission tip for use in field emission displays in which the emission tip is i) optionally sharpened through oxidation, ii) deposited with a conformal insulating material, iii) deposited with a flowable insulating material, which is reflowed below the level of the tip, iv) optionally deposited with another insulating material, v) deposited with a conductive material layer, and vi) optionally, deposited with a buffering material, vii) planarized with a chemical mechanical planarization (CMP) step, to expose the conformal insulating layer, viii) wet etched to remove the insulating material and thereby expose the emission tip, afterwhich ix) the emitter tip may be coated with a material having a lower work function than silicon.
摘要翻译：用于形成围绕用于场发射显示器中的电子发射尖端的自对准栅极结构的化学机械抛光工艺，其中发射尖端i）可选地通过氧化锐化，ii）用保形绝缘材料沉积，iii）沉积具有可流动的绝缘材料，其被回流到尖端的水平面以下，iv）任选地沉积有另外的绝缘材料，v）沉积有导电材料层，以及vi）任选地沉积有缓冲材料，vii）化学机械平面化（CMP）步骤，暴露保形绝缘层，viii）湿式蚀刻以去除绝缘材料，从而暴露发射尖端，之后ix）发射极尖端可以涂覆具有比硅功函数低的材料。

3. 发明授权

US5229331A Method to form self-aligned gate structures around cold cathode emitter tips using chemical mechanical polishing technology 失效
标题翻译：使用化学机械抛光技术在冷阴极发射器尖端周围形成自对准栅极结构的方法
公开(公告)号：US5229331A
公开(公告)日：1993-07-20
申请号：US837453
申请日：1992-02-14
申请人： Trung T. Doan , J. Brett Rolfson , Tyler A. Lowrey , David A. Cathey
发明人： Trung T. Doan , J. Brett Rolfson , Tyler A. Lowrey , David A. Cathey
IPC分类号： H01J1/304 , H01J9/02 , H01L21/3105
CPC分类号： H01J9/025 , H01L21/31053 , H01J2201/30426 , H01J2201/319 , H01J2209/0226
摘要： A chemical mechanical polishing process for the formation of self-aligned gate structures surrounding an electron emission tip for use in field emission displays in which the emission tip is i) optionally sharpened through oxidation, ii) deposited with a conformal insulating material, iii) deposited with a flowable insulating material, which is reflowed below the level of the tip, iv) optionally deposited with another insulating material, v) deposited with a conductive material layer, and vi) optionally, deposited with a buffering material, vii) planarized with a chemical mechanical planarization (CMP) step, to expose the conformal insulating layer, viii) wet etched to remove the insulating material and thereby expose the emission tip, afterwhich ix) the emitter tip may be coated with a material having a lower work function than silicon.
摘要翻译：用于形成围绕用于场发射显示器中的电子发射尖端的自对准栅极结构的化学机械抛光工艺，其中发射尖端i）可选地通过氧化锐化，ii）用保形绝缘材料沉积，iii）沉积具有可流动的绝缘材料，其被回流到尖端的水平面以下，iv）任选地沉积有另外的绝缘材料，v）沉积有导电材料层，以及vi）任选地沉积有缓冲材料，vii）化学机械平面化（CMP）步骤，暴露保形绝缘层，viii）湿式蚀刻以去除绝缘材料，从而暴露发射尖端，之后ix）发射极尖端可以涂覆具有比硅功函数低的材料。

4. 发明授权

US5329207A Field emission structures produced on macro-grain polysilicon substrates 失效
标题翻译：在大颗粒多晶硅基板上产生的场致发射结构
公开(公告)号：US5329207A
公开(公告)日：1994-07-12
申请号：US883629
申请日：1992-05-13
申请人： David A. Cathey , J. Brett Rolfson , Tyler A. Lowrey , Trung T. Doan
发明人： David A. Cathey , J. Brett Rolfson , Tyler A. Lowrey , Trung T. Doan
IPC分类号： H01J1/30 , H01J1/304 , H01J9/02 , H01J29/04 , H01J31/12
CPC分类号： H01J1/3042 , H01J9/025 , H01J2201/30407
摘要： A baseplate for a flat panel display comprising relatively thick semiconductor substrate, wherein the semiconductor substrate is a macro-grain polycrystalline substrate, which is amorphized by ion implantation or reformed by recrystallization, to obscure the grain boundaries, thereafter redundant circuitry may be fabricated thereon to further enhance product yield.
摘要翻译：一种用于平板显示器的底板，包括相对厚的半导体衬底，其中半导体衬底是通过离子注入而非晶化或通过重结晶重新形成的宏晶多晶衬底，以掩盖晶界，此后可制造冗余电路，进一步提高产品产量。

5. 发明授权

US5259799A Method to form self-aligned gate structures and focus rings 失效
标题翻译：形成自对准栅极结构和聚焦环的方法
公开(公告)号：US5259799A
公开(公告)日：1993-11-09
申请号：US977477
申请日：1992-11-17
申请人： Trung T. Doan , Tyler A. Lowrey , David A. Cathey , J. Brett Rolfson
发明人： Trung T. Doan , Tyler A. Lowrey , David A. Cathey , J. Brett Rolfson
IPC分类号： H01J9/02 , H01J9/04
CPC分类号： H01J9/025 , H01J2209/0226 , H01J2329/00
摘要： A selective etching and chemical mechanical planarization process for the formation of self-aligned gate and focus ring structures surrounding an electron emission tip for use in field emission displays in which the emission tip is i) optionally sharpened through oxidation, ii) deposited with a first conformal layer, iii) deposited with a conductive material layer, iv) deposited with a second conformal insulating layer, v) deposited with a focus electrode ring material layer, vi) optionally deposited with a buffering material, vii) planarized with a chemical mechanical planarization (CMP) step, to expose a portion of the second conformal layer, viii) etched to form a self-aligned gate and focus ring, and thereby expose the emitter tip, afterwhich xi) the emitter tip may be coated with a low work function material.
摘要翻译：用于形成围绕用于场发射显示器中的电子发射尖端的自对准栅极和聚焦环结构的选择性蚀刻和化学机械平面化工艺，其中发射尖端i）可选地通过氧化锐化，ii）沉积有第一保留层，iii）沉积有导电材料层，iv）沉积有第二共形绝缘层，v）沉积有焦点电极环材料层，vi）任选地沉积有缓冲材料，vii）用化学机械平面化（CMP）步骤，以暴露第二共形层的一部分，viii）蚀刻以形成自对准栅极和聚焦环，从而暴露发射极尖端，之后xi）发射极尖端可以被涂覆有低功函数材料。

6. 发明授权

US5205770A Method to form high aspect ratio supports (spacers) for field emission display using micro-saw technology 失效
标题翻译：使用微锯技术形成用于场发射显示的高纵横比支撑（间隔物）的方法
公开(公告)号：US5205770A
公开(公告)日：1993-04-27
申请号：US851036
申请日：1992-03-12
申请人： Tyler A. Lowrey , Trung T. Doan , David A. Cathey , J. Brett Rolfson
发明人： Tyler A. Lowrey , Trung T. Doan , David A. Cathey , J. Brett Rolfson
IPC分类号： H01J9/24 , H01J29/02 , H01J31/12
CPC分类号： H01J9/242 , H01J31/123 , H01J2329/8625
摘要： Fabrication of spacer supports for use in field emitter displays through a process which involves 1) forming a mold for the spacers in a substrate through the use of micro-saw technology, 2) filling the mold with a material that is selectively etchable with respect to the mold, 3) optionally, planarizing the excess material to the level of the mold using chemical mechanical planarization, 4) attaching the filled mold to one of the electrode plates of the field emitter display, and 5) etching away (removing) the mold, after which 6) the plate can be aligned with its complementary electrode plate, and 7) a vacuum formed.
摘要翻译：通过一种方法制造用于场致发射显示器的间隔支架，该方法涉及1）通过使用微锯技术在衬底中形成用于衬垫的模具，2）用相对于模具，3）任选地，使用化学机械平面化将多余材料平坦化到模具的水平面; 4）将填充的模具附接到场致发射体显示器的电极板之一，以及5）蚀刻（去除）模具，之后6）板可以与其互补电极板对准，并且7）形成真空。

7. 发明授权

US5186670A Method to form self-aligned gate structures and focus rings 失效
标题翻译：形成自对准栅极结构和聚焦环的方法
公开(公告)号：US5186670A
公开(公告)日：1993-02-16
申请号：US844369
申请日：1992-03-02
申请人： Trung T. Doan , Tyler A. Lowrey , David A. Cathey , J. Brett Rolfson
发明人： Trung T. Doan , Tyler A. Lowrey , David A. Cathey , J. Brett Rolfson
IPC分类号： H01J9/02
CPC分类号： H01J9/025 , H01J2209/0226 , H01J2329/00
摘要： A selective etching and chemical mechanical planarization process for the formation of self-aligned gate and focus ring structures surrounding an electron emission tip for use in field emission displays in which the emission tip is i) optionally sharpened through oxidation, ii) deposited with a first conformal layer, iii) deposited with a conductive material layer, iv) deposited with a second conformal insulating layer, v) deposited with a focus electrode ring material layer, vi) optionally deposited with a buffering material, vii) planarized with a chemical mechanical planarization (CMP) step, to expose a portion of the second conformal layer, viii) etched to form a self-aligned gate and focus ring, and thereby expose the emitter tip, afterwhich xi) the emitter tip may be coated with a low work function material.

8. 发明授权

US5653619A Method to form self-aligned gate structures and focus rings 失效
标题翻译：形成自对准栅极结构和聚焦环的方法
公开(公告)号：US5653619A
公开(公告)日：1997-08-05
申请号：US300985
申请日：1994-09-06
申请人： Eugene H. Cloud , Trung T. Doan , Tyler A. Lowrey , David A. Cathey , J. Brett Rolfson
发明人： Eugene H. Cloud , Trung T. Doan , Tyler A. Lowrey , David A. Cathey , J. Brett Rolfson
IPC分类号： H01J9/02 , H01J1/30
CPC分类号： H01J9/025 , H01J2209/0226 , H01J2329/00
摘要： A selective etching and chemical mechanical planarization process is employed for the formation of self-aligned gate and focus ring structures surrounding an electron emission tip for use in field emission displays. The process is employed to construct an emission grid whereby the gate structure is capable of producing a field strength at the cathode tip sufficient to generate electron emission. The gate is disposed at a location above the tip such that the gate physically intercepts the outermost lateral portions of the beam, yet does not induce a significant electrostatic outward divergence of the beam, thereby reducing the cross-section of the beam.
摘要翻译：采用选择性蚀刻和化学机械平面化方法来形成围绕用于场发射显示器的电子发射尖端的自对准栅极和聚焦环结构。该方法用于构建发射栅极，由此栅极结构能够在阴极尖端产生足以产生电子发射的场强。门设置在尖端上方的位置，使得栅极物理地截取梁的最外侧部分，但不会引起梁的显着的静电向外发散，从而减小梁的横截面。

9. 发明授权

US5438240A Field emission structures produced on macro-grain polysilicon substrates 失效
标题翻译：在大颗粒多晶硅基板上产生的场致发射结构
公开(公告)号：US5438240A
公开(公告)日：1995-08-01
申请号：US232792
申请日：1994-04-22
申请人： David A. Cathey , J. Brett Rolfson , Tyler A. Lowrey , Trung T. Doan
发明人： David A. Cathey , J. Brett Rolfson , Tyler A. Lowrey , Trung T. Doan
IPC分类号： H01J1/30 , H01J1/304 , H01J9/02 , H01J29/04 , H01J31/12
CPC分类号： H01J1/3042 , H01J9/025 , H01J2201/30407
摘要： A baseplate for a flat panel display comprising relatively thick semiconductor substrate, wherein the semiconductor substrate is a macro-grain polycrystalline substrate, which is amorphized by ion implantation or reformed by recrystallization, to obscure the grain boundaries, thereafter redundant circuitry may be fabricated thereon to further enhance product yield.
摘要翻译：一种用于平板显示器的底板，包括相对厚的半导体衬底，其中半导体衬底是通过离子注入而非晶化或通过重结晶重新形成的宏晶多晶衬底，以掩盖晶界，此后可制造冗余电路，进一步提高产品产量。

10. 发明授权

US07009298B2 Low-resistance contact to silicon having a titanium silicide interface and an amorphous titanium carbonitride barrier layer 失效
标题翻译：具有硅化钛界面的硅的低电阻接触和无定形氮化钛氮化硼阻挡层
公开(公告)号：US07009298B2
公开(公告)日：2006-03-07
申请号：US10639120
申请日：2003-08-11
申请人： Gurtej S. Sandhu , Trung T. Doan , Tyler A. Lowrey
发明人： Gurtej S. Sandhu , Trung T. Doan , Tyler A. Lowrey
IPC分类号： H01L21/302
CPC分类号： H01L21/76855 , C23C16/34 , H01L21/28518 , H01L21/28556 , H01L21/28568 , H01L21/76843 , H01L21/76846 , H01L21/76856 , H01L21/76862
摘要： A contact structure is provided incorporating an amorphous titanium nitride barrier layer formed via low-pressure chemical vapor deposition (LPCVD) utilizing tetrakis-dialkylamido-titanium, Ti(NMe2)4, as the precursor.
摘要翻译：提供了一种接触结构，其结合使用四 - 二烷基酰氨基 - 钛，Ti（NMe 2 O 3）4 Si 3 O 4的低压化学气相沉积（LPCVD）形成的无定形氮化钛阻挡层。，作为前体。

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