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1. 发明授权

US06352081B1 Method of cleaning a semiconductor device processing chamber after a copper etch process 失效
标题翻译：在铜蚀刻工艺之后清洁半导体器件处理室的方法
公开(公告)号：US06352081B1
公开(公告)日：2002-03-05
申请号：US09350802
申请日：1999-07-09
申请人： Danny Chien Lu , Allen Zhao , Peter Hsieh , Hong Shih , Li Xu , Yan Ye
发明人： Danny Chien Lu , Allen Zhao , Peter Hsieh , Hong Shih , Li Xu , Yan Ye
IPC分类号： B08B900
CPC分类号： H01L21/67028 , Y10S438/905
摘要： The present invention is a method for removing deposited etch byproducts from surfaces of a semiconductor processing chamber after a copper etch process. The method of the invention comprises the following general steps: (a) an oxidation step, in which interior surfaces of the processing chamber are contacted with an oxidizing plasma; (b) a first non-plasma cleaning step, in which interior surfaces of the processing chamber are contacted with an H+hfac-comprising gas; and (c) a second cleaning step, in which interior surfaces of the processing chamber are contacted with a plasma containing reactive fluorine species, whereby at least a portion of the copper etch byproducts remaining after step (b) are volatilized into gaseous species, which are removed from the processing chamber. The method of the invention is preferably performed at a chamber wall temperature of at least 150° C. in order to achieve optimum cleaning of the chamber at the chamber operating pressures typically used during the cleaning process. The dry cleaning method of the invention can be performed between wafer processing runs without opening the processing chamber, thereby minimizing potential contamination to the chamber as well as chamber downtime.
摘要翻译：本发明是在铜蚀刻工艺之后从半导体处理室的表面去除沉积的蚀刻副产物的方法。本发明的方法包括以下一般步骤：（a）氧化步骤，其中处理室的内表面与氧化等离子体接触; （b）第一非等离子体清洗步骤，其中处理室的内表面与含H + hfac的气体接触; 和（c）第二清洁步骤，其中处理室的内表面与含有反应性氟物质的等离子体接触，由此在步骤（b）之后残留的铜蚀刻副产物的至少一部分挥发成气态物质，其中从处理室中取出。本发明的方法优选在至少150℃的室壁温度下进行，以便在清洁过程中通常使用的室的操作压力下实现室的最佳清洁。本发明的干式清洗方法可以在晶片处理运行之间进行，而不会打开处理室，从而最小化对室的潜在污染以及室停机时间。

2. 发明授权

US5756400A Method and apparatus for cleaning by-products from plasma chamber surfaces 失效
标题翻译：从等离子体室表面清洗副产品的方法和设备
公开(公告)号：US5756400A
公开(公告)日：1998-05-26
申请号：US568064
申请日：1995-12-08
申请人： Yan Ye , Diana Xiaobing Ma , Gerald Zheyao Yin , Keshav Prasad , Mark Siegel , Steve S. Y. Mak , Paul Martinez , James S. Papanu , Danny Chien Lu
发明人： Yan Ye , Diana Xiaobing Ma , Gerald Zheyao Yin , Keshav Prasad , Mark Siegel , Steve S. Y. Mak , Paul Martinez , James S. Papanu , Danny Chien Lu
IPC分类号： C23F4/00 , B08B7/00 , H01L21/205 , H01L21/302 , H01L21/304 , H01L21/3065 , H01L21/00
CPC分类号： B08B7/0042 , Y10S438/905
摘要： The present invention provides an apparatus and process for plasma cleaning the interior surfaces of semiconductor processing chambers. The method is directed to the dry etching of accumulated contaminant residues attached to the inner surfaces of the plasma processing chamber and includes introducing a cleaning gas mixture of a halogen-containing gas; activating a plasma in an environment substantially free of oxygen species; contacting the contaminant residues with the activated cleaning gas to volatilize the residues; and removing the gaseous by-products from the chamber. The etchant gaseous mixture comprises an even or greater amount of at least one fluorine-containing gas and an even or lesser amount of at least one chlorine-containing gas. The instant invention enables the intermittent use of the cleaning steps in an ongoing plasma processing of semiconductor wafers without chamber downtime and significant loss of wafer production.
摘要翻译：本发明提供了一种用于等离子体清洁半导体处理室内表面的装置和方法。该方法涉及连接到等离子体处理室的内表面上的累积污染物残留物的干蚀刻，并且包括引入含卤素气体的清洁气体混合物; 在基本上不含氧物质的环境中激活等离子体; 使污染物残留物与活化的清洁气体接触以挥发残余物; 并从室中除去气态副产物。蚀刻剂气体混合物包含甚至或更多量的至少一种含氟气体和甚至或更少量的至少一种含氯气体。本发明能够在半导体晶片的持续等离子体处理中间歇地使用清洁步骤，而无需室停机和晶片生产的显着损失。

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