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1. 发明授权

US06789821B2 Method and apparatus for folding an airbag 有权
标题翻译：用于折叠气囊的方法和装置
公开(公告)号：US06789821B2
公开(公告)日：2004-09-14
申请号：US10212800
申请日：2002-08-07
申请人： Daniel Zink , Ralph Mohr
发明人： Daniel Zink , Ralph Mohr
IPC分类号： B60R2116
CPC分类号： B60R21/237 , B60R21/232 , B60R2021/2375
摘要： An airbag is pushed in portions by at least one slide means into at least one compartment in order to generate the folding. So that even complex folds are possible using a relatively simple apparatus, in accordance with the invention the airbag is arranged on the apparatus with a first portion in a substantially vertical position, and a second portion of the airbag is pushed into a compartment, during which the second portion is pre-tensioned by the weight of the first portion in front of the associated slide means. Further provided is pushing the airbag in a first direction into at least one first compartment and pushing in a second direction into at least one second compartment, this second direction being directed at an angle in relation to the first direction.
摘要翻译：安全气囊被至少一个滑动装置部分地推入至少一个隔室中，以产生折叠。因此，使用相对简单的装置，即使复杂的褶皱也是可能的，根据本发明，气囊布置在设备上，第一部分处于基本垂直的位置，气囊的第二部分被推入隔间，在此期间第二部分由相关联的滑动装置前面的第一部分的重量预张紧。进一步提供的是将气囊沿第一方向推入至少一个第一隔室并沿第二方向推入至少一个第二隔室，该第二方向相对于第一方向指向一角度。

2. 发明授权

US4769682A Boron doped semiconductor materials and method for producing same 失效
标题翻译：硼掺杂半导体材料及其制造方法
公开(公告)号：US4769682A
公开(公告)日：1988-09-06
申请号：US39888
申请日：1987-04-20
申请人： Chi C. Yang , Ralph Mohr , Stephen Hudgens , Annette Johncock , Prem Nath
发明人： Chi C. Yang , Ralph Mohr , Stephen Hudgens , Annette Johncock , Prem Nath
IPC分类号： G03G5/082 , H01L21/205 , H01L31/20 , H01L29/167
CPC分类号： H01L31/206 , G03G5/08264 , G03G5/08278 , H01L21/02425 , H01L21/0245 , H01L21/02505 , H01L21/02532 , H01L21/02579 , H01L21/0262 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： An improved p-type semiconductor alloy film, an improved substantially intrinsic amorphous semiconductor alloy film, improved photovoltaic and photoresponsive devices incorporating such films and r.f. and microwave glow discharge methods for fabricating same. The improved semiconductor alloy films preferably include at least silicon deposited by the glow discharge of a compound containing at least silicon and a boron species that remains substantially monoatomic as it is incorporated into the silicon matrix. The p-type film is particularly stable, is characterized by a non-narrowed band gap, reduced bulk stress, improved morphology, growth and adhesion and reduced peeling and cracking. The substantially intrinsic film is characterized by substantially reduced Staebler-Wronski degradation. The method includes the novel step of introducing a boron species that does not form higher order boron hydrides or other boron polymers or oligomers in the glow discharge plasma.
摘要翻译：改进的p型半导体合金膜，改进的基本上本征的非晶半导体合金膜，改进的光伏和光响应器件并入这种膜和r.f. 微波辉光放电方法。改进的半导体合金膜优选至少包括通过辉光放电沉积的硅，所述化学物质至少包含硅和硼物质，当掺入到硅基质中时，它们基本保持单原子。 p型膜特别稳定，其特征在于非窄带隙，减小的体积应力，改善的形态，生长和粘附以及减少的剥离和开裂。基本上本征的膜的特征在于显着降低了Staebler-Wronski降解。该方法包括在辉光放电等离子体中引入不形成高级氢化硼或其它硼聚合物或低聚物的硼物质的新步骤。

3. 发明授权

US4756924A Method for the microwave fabrication of boron doped semiconductor materials 失效
标题翻译：硼掺杂半导体材料的微波制造方法
公开(公告)号：US4756924A
公开(公告)日：1988-07-12
申请号：US850190
申请日：1986-04-10
申请人： Chi C. Yang , Ralph Mohr , Stephen Hudgens , Annette Johncock , Prem Nath
发明人： Chi C. Yang , Ralph Mohr , Stephen Hudgens , Annette Johncock , Prem Nath
IPC分类号： G03G5/082 , H01L21/205 , B05D3/06 , B05D3/02
CPC分类号： G03G5/08214 , H01L21/02425 , H01L21/0245 , H01L21/02505 , H01L21/02532 , H01L21/02579 , H01L21/0262
摘要： A microwave glow discharge method for the deposition of p-doped semiconductor alloy material, which material is characterized by mono-atomic and tetrahedral incorporation of boron species into the semiconductor host matrix, thereby providing a p-doped semiconductor alloy material characterized by reduced bulk strain, reduced nucleation of undesirable morphological growth, improved adhesion to a substrate and reduced peeling and cracking.
摘要翻译：一种用于沉积p掺杂半导体合金材料的微波辉光放电方法，该材料的特征在于将硼物质单原子和四面体结合到半导体主体基质中，由此提供了一种p掺杂的半导体合金材料，其特征在于减小的体系应变减少了不希望的形态生长的成核，改善了对基材的粘附力，并减少了剥离和开裂。

4. 发明授权

US4624862A Boron doped semiconductor materials and method for producing same 失效
公开(公告)号：US4624862A
公开(公告)日：1986-11-25
申请号：US668435
申请日：1984-11-05
申请人： Chi C. Yang , Ralph Mohr , Stephen Hudgens , Annette Johncock , Prem Nath
发明人： Chi C. Yang , Ralph Mohr , Stephen Hudgens , Annette Johncock , Prem Nath
IPC分类号： C23C16/30 , C23C14/14 , C23C16/50 , G03G5/082 , H01L21/205 , H01L31/04 , H01L31/20 , B05D5/12
CPC分类号： H01L31/206 , G03G5/08264 , G03G5/08278 , H01L21/02425 , H01L21/0245 , H01L21/02505 , H01L21/02529 , H01L21/02532 , H01L21/02579 , H01L21/0262 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： An improved p-type semiconductor alloy film, an improved substantially intrinsic amorphous semiconductor alloy film, improved photovoltaic and photoresponsive devices incorporating such films and r.f. and microwave glow discharge methods for fabricating same. The improved semiconductor alloy films preferably include at least silicon deposited by the glow discharge of a compound containing at least silicon and a boron species that remains substantially monoatomic as it is incorporated into the silicon matrix. The p-type film is particularly stable, is characterized by a non-narrowed band gap, reduced bulk stress, improved morphology, growth and adhesion and reduced peeling and cracking. The substantially intrinsic film is characterized by substantially reduced Staebler-Wronski degradation. The method includes the novel step of introducing a boron species that does not form higher order boron hydrides or other boron polymers or oligomers in the glow discharge plasma.

5. 发明授权

US4471155A Narrow band gap photovoltaic devices with enhanced open circuit voltage 失效
标题翻译：窄带隙光伏器件具有增强的开路电压
公开(公告)号：US4471155A
公开(公告)日：1984-09-11
申请号：US485411
申请日：1983-04-15
申请人： Ralph Mohr , Vincent D. Cannella
发明人： Ralph Mohr , Vincent D. Cannella
IPC分类号： H01L31/04 , H01L31/075 , H01L31/20 , H01L31/06
CPC分类号： H01L31/076 , H01L31/075 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： The open circuit voltage and efficiency of photovoltaic devices formed from multiple regions of semiconductor alloys including at least one narrow band gap semiconductor alloy are enhanced. The device includes a pair of doped regions and an intrinsic body between the doped regions. The intrinsic body includes a first intrinsic region and an open circuit voltage enhancement means including a second intrinsic region. The second intrinsic region has a wider band gap than the band gap of the first intrinsic region and is disposed between the first intrinsic region and one of the doped regions. The open circuit enhancement means can also include a third intrinsic region also having a wider band gap than the first intrinsic region and disposed on the side of the first intrinsic region opposite the second intrinsic region.
摘要翻译：由包括至少一个窄带隙半导体合金的半导体合金的多个区域形成的光电器件的开路电压和效率增强。该器件包括掺杂区域之间的一对掺杂区域和本征体。本征体包括第一本征区域和包括第二本征区域的开路电压增强装置。第二本征区域具有比第一本征区域的带隙更宽的带隙，并且设置在第一本征区域和一个掺杂区域之间。开路增强装置还可以包括第三本征区域，其也具有比第一本征区域更宽的带隙并且设置在与第二本征区域相对的第一本征区域的一侧。

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