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    • 3. 发明授权
    • Satellite receiver with interfering signal cancellation
    • 具有干扰信号消除的卫星接收机
    • US08644866B2
    • 2014-02-04
    • US13031216
    • 2011-02-20
    • Daniel WajcerGuy Cohen
    • Daniel WajcerGuy Cohen
    • H04B7/00H04B15/00
    • H04B7/0845H04B1/109H04B1/126
    • A method for communication includes receiving a Radio Frequency (RF) channel containing a desired signal conforming to a first air interface and an interfering signal conforming to a second air interface. A first receiver configured for the first air interface and a second receiver configured for the second air interface are synchronized to a common frequency and timing reference. While the first and second receivers are synchronized, the desired signal is decoded from the RF channel using the first receiver to generate a first output, the interfering signal is decoded from the RF channel using the second receiver to generate a second output, and the desired signal is reconstructed while suppressing the interfering signal by jointly processing the first and second outputs.
    • 一种用于通信的方法包括接收包含符合第一空中接口的所需信号的射频(RF)信道和符合第二空中接口的干扰信号。 配置用于第一空中接口的第一接收机和为第二空中接口配置的第二接收机被同步到公共频率和定时参考。 当同步第一和第二接收机时,使用第一接收机从RF信道解码期望的信号以产生第一输出,使用第二接收机从RF信道解码干扰信号以产生第二输出,并且所需的信号 通过联合处理第一和第二输出来抑制干扰信号而重建信号。
    • 4. 发明申请
    • SATELLITE RECEIVER WITH INTERFERING SIGNAL CANCELLATION
    • 具有干扰信号消除的卫星接收机
    • US20120214524A1
    • 2012-08-23
    • US13031216
    • 2011-02-20
    • Daniel WajcerGuy Cohen
    • Daniel WajcerGuy Cohen
    • H04B7/00
    • H04B7/0845H04B1/109H04B1/126
    • A method for communication includes receiving a Radio Frequency (RF) channel containing a desired signal conforming to a first air interface and an interfering signal conforming to a second air interface. A first receiver configured for the first air interface and a second receiver configured for the second air interface are synchronized to a common frequency and timing reference. While the first and second receivers are synchronized, the desired signal is decoded from the RF channel using the first receiver to generate a first output, the interfering signal is decoded from the RF channel using the second receiver to generate a second output, and the desired signal is reconstructed while suppressing the interfering signal by jointly processing the first and second outputs.
    • 一种用于通信的方法包括接收包含符合第一空中接口的所需信号的射频(RF)信道和符合第二空中接口的干扰信号。 配置用于第一空中接口的第一接收机和被配置用于第二空中接口的第二接收机被同步到公共频率和定时参考。 当第一和第二接收机被同步时,使用第一接收机从RF信道解码期望的信号以产生第一输出,使用第二接收机从RF信道解码干扰信号以产生第二输出,并且所需的信号 通过联合处理第一和第二输出来抑制干扰信号而重建信号。
    • 9. 发明授权
    • Top-down nanowire thinning processes
    • 自上而下的纳米线稀疏过程
    • US08546269B2
    • 2013-10-01
    • US12417936
    • 2009-04-03
    • Tymon BarwiczGuy CohenLidija SekaricJeffrey Sleight
    • Tymon BarwiczGuy CohenLidija SekaricJeffrey Sleight
    • H01L21/302H01L21/461H01L29/06
    • H01L21/02238B82Y10/00B82Y30/00H01L21/02255H01L21/30604H01L29/0665H01L29/0676H01L29/42392H01L29/775H01L29/78696
    • Techniques for fabricating nanowire-based devices are provided. In one aspect, a method for fabricating a semiconductor device is provided comprising the following steps. A wafer is provided having a silicon-on-insulator (SOI) layer over a buried oxide (BOX) layer. Nanowires and pads are etched into the SOI layer to form a ladder-like structure wherein the pads are attached at opposite ends of the nanowires. The BOX layer is undercut beneath the nanowires. The nanowires and pads are contacted with an oxidizing gas to oxidize the silicon in the nanowires and pads under conditions that produce a ratio of a silicon consumption rate by oxidation on the nanowires to a silicon consumption rate by oxidation on the pads of from about 0.75 to about 1.25. An aspect ratio of width to thickness among all of the nanowires may be unified prior to contacting the nanowires and pads with the oxidizing gas.
    • 提供了制造基于纳米线的器件的技术。 一方面,提供一种制造半导体器件的方法,包括以下步骤。 提供了在掩埋氧化物(BOX)层上方具有绝缘体上硅(SOI)层的晶片。 将纳米线和焊盘蚀刻到SOI层中以形成阶梯状结构,其中焊盘附着在纳米线的相对端。 BOX层在纳米线下面被切下。 纳米线和焊盘与氧化气体接触,以在通过氧化在纳米线上产生硅消耗速率与硅消耗速率之比的条件下,在纳米线和焊盘中氧化硅,焊盘上的氧化从约0.75降至 约1.25。 在使纳米线和焊盘与氧化气体接触之前,可以统一所有纳米线中的宽度与厚度的纵横比。