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    • 6. 发明授权
    • Semiconductor substrate for photosensitive chip
    • 用于感光芯片的半导体衬底
    • US07523432B2
    • 2009-04-21
    • US11936800
    • 2007-11-08
    • Daniel Van BlerkomMeng-Chang Yang
    • Daniel Van BlerkomMeng-Chang Yang
    • G06F17/50G06F9/455
    • H01L27/14603H01L27/14636
    • A circuit layout for a photosensitive chip includes a semiconductor substrate, a plurality of first circuit lines and a plurality of second circuit lines. The semiconductor substrate has a matrix of photosensitive units. Each photosensitive unit has a first blocking region, a second blocking region and a photosensitive region formed on the semiconductor substrate. The first blocking region is formed between neighboring photosensitive regions aligned in a vertical direction. The second blocking region is formed between neighboring photosensitive regions aligned in a horizontal direction. Free electrons produced by illuminating the photosensitive units are blocked by the first and the second blocking regions.
    • 用于感光芯片的电路布局包括半导体衬底,多个第一电路线和多个第二电路线。 半导体衬底具有感光单元的矩阵。 每个光敏单元具有形成在半导体衬底上的第一阻挡区域,第二阻挡区域和感光区域。 第一阻挡区域形成在垂直方向上排列的相邻光敏区域之间。 第二阻挡区域形成在沿水平方向排列的相邻光敏区域之间。 通过照射感光单元产生的自由电子被第一和第二阻挡区域阻挡。
    • 7. 发明申请
    • SEMICONDUCTOR SUBSTRATE FOR PHOTOSENSITIVE CHIP
    • 用于感光芯片的半导体基板
    • US20080061389A1
    • 2008-03-13
    • US11936800
    • 2007-11-08
    • Daniel Van BlerkomMeng-Chang Yang
    • Daniel Van BlerkomMeng-Chang Yang
    • H01L31/00
    • H01L27/14603H01L27/14636
    • A circuit layout for a photosensitive chip includes a semiconductor substrate, a plurality of first circuit lines and a plurality of second circuit lines. The semiconductor substrate has a matrix of photosensitive units. Each photosensitive unit has a first blocking region, a second blocking region and a photosensitive region formed on the semiconductor substrate. The first blocking region is formed between neighboring photosensitive regions aligned in a vertical direction. The second blocking region is formed between neighboring photosensitive regions aligned in a horizontal direction. Free electrons produced by illuminating the photosensitive units are blocked by the first and the second blocking regions.
    • 用于感光芯片的电路布局包括半导体衬底,多个第一电路线和多个第二电路线。 半导体衬底具有感光单元的矩阵。 每个光敏单元具有形成在半导体衬底上的第一阻挡区域,第二阻挡区域和感光区域。 第一阻挡区域形成在垂直方向上排列的相邻光敏区域之间。 第二阻挡区域形成在沿水平方向排列的相邻光敏区域之间。 通过照射感光单元产生的自由电子被第一和第二阻挡区域阻挡。
    • 8. 发明授权
    • Shielding an imaging array from X-ray noise
    • 屏蔽X射线噪声成像阵列
    • US07501631B2
    • 2009-03-10
    • US11245519
    • 2005-10-07
    • Stan MandelkernDavid SchickBarmak MansoorianDaniel Van Blerkom
    • Stan MandelkernDavid SchickBarmak MansoorianDaniel Van Blerkom
    • G01T1/20
    • G01T1/2018G01T1/24H01L27/14663H04N5/32H04N5/357
    • An electronic imaging sensor, which has an improved immunity to noise caused by unwanted x-rays, images an object by collecting charge carriers produced in the sensor when the object is exposed to x-rays. One or more shielding areas are formed proximate the sensor to capture or sweep away any undesirable charge carriers generated by the unwanted x-rays. The shielding areas extend deeper beneath the surface of the sensor than the depth at which the desired charge carriers corresponding to the object being imaged is collected. The shielding areas capture charge carriers formed by the unwanted x-rays, which penetrate into the sensor to a greater depth than the depth at which the. desired charge carriers are collected. In this way, the undesirable charge carriers are captured near the region where they are generated and before they migrate towards the surface where they can be collected and manifest as noise in the resulting image of the object.
    • 一种电子成像传感器,其具有改善的对不想要的X射线引起的噪声的免疫力,当物体暴露于x射线时,通过收集在传感器中产生的电荷载体对物体进行成像。 在传感器附近形成一个或多个屏蔽区域以捕获或扫除由不需要的X射线产生的任何不期望的电荷载体。 屏蔽区域比传感器表面下方的深度要深于与被成像物体相对应的所需电荷载流子的深度。 屏蔽区域捕获由不需要的X射线形成的电荷载体,其穿透传感器的深度比其深度更大。 收集所需的电荷载体。 以这种方式,不期望的电荷载体被捕获在它们被生成的区域附近,并且在它们迁移到可以被收集的表面之前被捕获,并且在所得到的对象的图像中被表现为噪声。
    • 10. 发明授权
    • Circuit layout and semiconductor substrate for photosensitive chip
    • 电路布局和感光芯片的半导体衬底
    • US07322020B2
    • 2008-01-22
    • US10905897
    • 2005-01-25
    • Daniel Van BlerkomMeng-Chang Yang
    • Daniel Van BlerkomMeng-Chang Yang
    • G06F9/45G06F17/50G06F9/455
    • H01L27/14603H01L27/14636
    • A circuit layout for a photosensitive chip includes a semiconductor substrate, a plurality of first circuit lines and a plurality of second circuit lines. The semiconductor substrate has a matrix of photosensitive units. Each photosensitive unit has a first blocking region, a second blocking region and a photosensitive region formed on the semiconductor substrate. The first blocking region is formed between neighboring photosensitive regions aligned in a vertical direction. The second blocking region is formed between neighboring photosensitive regions aligned in a horizontal direction. Free electrons produced by illuminating the photosensitive units are blocked by the first and the second blocking regions.
    • 用于感光芯片的电路布局包括半导体衬底,多个第一电路线和多个第二电路线。 半导体衬底具有感光单元的矩阵。 每个光敏单元具有形成在半导体衬底上的第一阻挡区域,第二阻挡区域和感光区域。 第一阻挡区域形成在垂直方向上排列的相邻光敏区域之间。 第二阻挡区域形成在沿水平方向排列的相邻光敏区域之间。 通过照射感光单元产生的自由电子被第一和第二阻挡区域阻挡。