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1. 发明授权

US4749850A High speed quantum well optical detector 失效
标题翻译：高速量子阱光检测器
公开(公告)号：US4749850A
公开(公告)日：1988-06-07
申请号：US043213
申请日：1987-04-27
申请人： Daniel S. Chemla , David A. B. Miller , Stefan N. Schmitt-Rink
发明人： Daniel S. Chemla , David A. B. Miller , Stefan N. Schmitt-Rink
IPC分类号： H01L31/10 , H01L31/0352 , H01L31/105 , H01J40/14
CPC分类号： B82Y20/00 , H01L31/0352 , H01L31/035236 , H01L31/105
摘要： In response to ultrafast optical signal pulses, it is now possible to generate correspondingly ultrafast electrical signal pulses by employing semiconductor apparatus including at least one quantum well layer electrically biased by a static electric field. Optical signal pulses incident on the quantum well are at a wavelength substantially less than the absorption edge of the quantum well layer or layers. In other words, the incident optical pulses have a means photon energy less than the bandgap energy of the quantum well layer or layers. The electrical signal pulse generated subsists for a period of time substantially equal to the duration of the optical signal pulses incident on the quantum well layer or layers.

2. 发明授权

US5047810A Optically controlled resonant tunneling electronic devices 失效
标题翻译：光控谐振隧道电子器件
公开(公告)号：US5047810A
公开(公告)日：1991-09-10
申请号：US294225
申请日：1989-01-09
申请人： Daniel S. Chemla , David A. B. Miller , Stephan Schmitt-Rink
发明人： Daniel S. Chemla , David A. B. Miller , Stephan Schmitt-Rink
IPC分类号： H01L31/10 , H01L29/88 , H01L31/0352
CPC分类号： B82Y10/00 , H01L31/0352
摘要： Resonant tunneling devices having an improved device switching speed are realized by including an optical control element rather than an electrical control element for switching the device from one stable state to the other. The resulting optoelectronic device including at least one double barrier quantum well semiconductor heterostructure is controllably switched from an active state to an inactive state and vice versa by impinging optical signals from an optical control element having a mean photon energy less than the bandgap energy of the double barrier quantum well semiconductor heterostructure, wherein the active state of the device exhibits conduction of charge carriers by resonant tunneling. Improvement in the switching speed occurs because the optical processes initiated by the optical control element are condsiderably faster than the electronic processes induced by prior art electrical control elements.
摘要翻译：具有改进的器件切换速度的谐振隧道装置通过包括光学控制元件而不是将器件从一个稳定状态切换到另一个的电子控制元件来实现。所产生的包括至少一个双重势垒量子阱半导体异质结构的光电子器件可从可激活的状态切换到非活动状态，反之亦然，通过从具有小于双重能带隙能量的平均光子能量的光学控制元件入射光学信号势阱量子阱半导体异质结构，其中器件的活性状态通过谐振隧穿显示出电荷载流子的传导。由于由光学控制元件启动的光学处理比由现有技术的电气控制元件引起的电子处理更加明显地更快地发生开关速度的改善。

3. 发明授权

US4761620A Optical reading of quantum well device 失效
标题翻译：量子阱器件的光学读数
公开(公告)号：US4761620A
公开(公告)日：1988-08-02
申请号：US937387
申请日：1986-12-03
申请人： Israel Bar-Joseph , Tao-Yuan Chang , Daniel S. Chemla , David A. B. Miller
发明人： Israel Bar-Joseph , Tao-Yuan Chang , Daniel S. Chemla , David A. B. Miller
IPC分类号： H01L27/10 , G02F1/015 , G02F1/017 , H01L21/338 , H01L29/778 , H01L29/812 , H01L31/10 , H01L31/14
CPC分类号： B82Y20/00 , G02F1/017
摘要： Optical apparatus is disclosed wherein narrow line width light from a source is directed through the substrate of a semiconductor structure and reflected from the gate electrode of a field effect transistor element fabricated on the surface of the semiconductor structure. A quantum well layer serves as the current channel for the field effect transistor, and charge carries from a doped semiconductor layer provide high mobility carriers in the quantum well layer. Changes in the potential between the gate and source electrodes of the field effect transistor causes the normal pinchoff of carriers in the quantum well layer thereby causing changes in the absorption characteristic presented by the quantum well layer. By directing light from the source at the gate electrode through the substrate of the semiconductor structure, a photodetector can be positioned so as to detect a change in light which has passed twice through the quantum well layer, thereby detecting a change in the electrical state of the field effect transistor.
摘要翻译：公开了一种光学装置，其中来自源极的窄线宽度光被引导通过半导体结构的衬底，并且从制造在半导体结构的表面上的场效应晶体管元件的栅电极反射。量子阱层用作场效应晶体管的电流通道，并且来自掺杂半导体层的电荷携带在量子阱层中提供高迁移率载流子。场效应晶体管的栅极和源极之间的电势的变化导致量子阱层中载流子的正常尖峰，从而引起量子阱层所呈现的吸收特性的变化。通过将来自栅极的光源通过半导体结构的基板引导，可以将光电检测器定位以便检测已经通过量子阱层的两次的光的变化，从而检测电子状态的变化场效应晶体管。

4. 发明授权

US4822992A Wavelength conversion using self electrooptic effect devices 失效
标题翻译：使用自电光效应器件进行波长转换
公开(公告)号：US4822992A
公开(公告)日：1989-04-18
申请号：US140079
申请日：1987-12-31
申请人： Israel Bar-Joseph , Daniel S. Chemla , David A. B. Miller
发明人： Israel Bar-Joseph , Daniel S. Chemla , David A. B. Miller
IPC分类号： G02F1/015 , G02F1/017 , G02F2/00 , G02F3/02 , H01L27/15 , H01L31/14 , H01J40/14
CPC分类号： B82Y20/00 , G02F1/01716 , G02F2/004 , G02F3/028
摘要： Information borne by an optical signal at a first wavelength is transferred intact to another optical signal at a second wavelength and vice versa via an optoelectronic circuit employing quantum well devices connected serially to facilitate self electrooptic effects therein. The optoelectronic circuit accepts two input signals and provides two output signals wherein an input signal and its corresponding output signal are at the same wavelength. Bidirectional information transfer with bidirectional wavelength conversion is permitted by the optoelectronic circuit.

5. 发明授权

US4597638A Nonlinear optical apparatus 失效
标题翻译：非线性光学仪器
公开(公告)号：US4597638A
公开(公告)日：1986-07-01
申请号：US566968
申请日：1983-12-30
申请人： Daniel S. Chemla , David A. B. Miller , Peter W. Smith
发明人： Daniel S. Chemla , David A. B. Miller , Peter W. Smith
IPC分类号： G02F1/017 , G02F1/21 , G02F1/313 , G02F1/35 , G02F1/355 , G02F3/02 , G02F1/015
CPC分类号： B82Y20/00 , G02F1/017 , G02F1/01716 , G02F1/218 , G02F1/3556 , G02F3/024 , G02F1/3137 , G02F1/3515
摘要： A nonlinear optical apparatus is provided with a multiple layer heterostructure made from alternate layers of a charge carrier semiconductor material having a narrow bandgap energy, and a charge barrier material having a wider bandgap energy than the charge carrier material. The layers are deposited one upon the other in substantially flat planes forming a series of potential barriers. The potential barriers are capable of confining charge carriers which arise within the layers of the charge carrier semiconductor material to remain substantially therein. The optical absorption coefficient of the multiple layer heterostructure exhibits at least one sharp resonant optical absorption peak near the semiconductor material bandgap absorption. A light source is restricted to provide a beam of light photons of energy near the energy of the sharp resonant optical absorption peak for promoting production of charge carriers within the charge carrier semiconductor material. The light photons are directed into the multiple layer heterostructure so that the light photons may saturate the optical absorption coefficient and thereby cause the index of refraction of the multiple layer heterostructure to vary with incident light intensity.
摘要翻译：非线性光学装置设置有由具有窄带隙能的电荷载体半导体材料的交替层制成的多层异质结构和具有比电荷载体材料更宽的带隙能量的电荷阻挡材料。这些层在形成一系列势垒的基本平坦的平面中彼此沉积。势垒能够限制出现在电荷载体半导体材料的层内的电荷载体基本保持在其中。多层异质结构的光吸收系数在半导体材料带隙吸收附近表现出至少一个锐利的共振光吸收峰。光源被限制为在尖锐的共振光吸收峰的能量附近提供能量光束，以促进电荷载流子半导体材料内的电荷载体的产生。光子被引导到多层异质结构中，使得光子可以饱和光吸收系数，从而导致多层异质结构的折射率随入射光强度而变化。

6. 发明授权

US4860296A Laser controlled by a multiple-layer heterostructure 失效
标题翻译：激光由多层异质结构控制
公开(公告)号：US4860296A
公开(公告)日：1989-08-22
申请号：US53498
申请日：1987-05-14
申请人： Daniel S. Chemla , David A. B. Miller , Peter W. Smith
发明人： Daniel S. Chemla , David A. B. Miller , Peter W. Smith
IPC分类号： G02F1/017 , H01S3/106 , H01S3/113 , H01S5/065 , H01S5/14
CPC分类号： B82Y20/00 , G02F1/017 , H01S3/1061 , H01S3/113 , H01S5/065 , H01S5/14
摘要： The invention is a controlled laser having an optical resonator, a laser gain medium placed inside the optical resonator, the laser gain medium being capable of emitting light and of lasing with the light, a multiple layer heterostructure placed inside the optical resonator, and means for varying an optical absorption of the multiple layer heterostructure for the light in order to control an optical gain of the optical resonator, and thereby control lasing of the laser gain medium. Passive mode locking is achieved by the light emitted by the gain medium controlling the optical absorption of the multiple layer heterostructure. Active mode locking and modulation are achieved by controlling the optical absorption of the multiple layer heterostructure by applying an electric field to the multiple layer heterostructure. Control of laser gain by an external light source is achieved by controlling the optical absorption of the multiple layer heterostructure by illuminating it with light from the external light source. An embodiment of the multiple layer heterostructure fabricated as a GaAs-AlGaAs multiple quantum well with a Type I superlattice band structure is a passive mode locker for a semiconductor diode laser.
摘要翻译：本发明是一种受控激光器，其具有光学谐振器，放置在光学谐振器内部的激光增益介质，激光增益介质能够发光并与光发射激光，多层异质结构位于光学谐振器内部，以及用于改变光的多层异质结构的光吸收，以便控制光学谐振器的光学增益，从而控制激光增益介质的激光。无源模式锁定是由控制多层异质结构光吸收的增益介质发出的光来实现的。通过对多层异质结构施加电场来控制多层异质结构的光吸收来实现主动模式锁定和调制。通过外部光源的光照射来控制多层异质结构的光吸收来实现对外部光源的激光增益的控制。作为具有I型超晶格带结构的GaAs-AlGaAs多量子阱制造的多层异质结构的实施例是用于半导体二极管激光器的无源模式锁存器。

7. 发明授权

US4528464A Degenerate four-wave mixer using multiple quantum well structures 失效
标题翻译：使用多个量子阱结构的简并四波混频器
公开(公告)号：US4528464A
公开(公告)日：1985-07-09
申请号：US470319
申请日：1983-02-28
申请人： Daniel S. Chemla , David A. B. Miller , Peter W. Smith
发明人： Daniel S. Chemla , David A. B. Miller , Peter W. Smith
IPC分类号： G02F1/35 , G02F1/355 , G02F2/00 , H01S5/00 , H01S5/026 , H03F7/00
CPC分类号： B82Y20/00 , G02F1/3534 , G02F1/3556
摘要： A four-wave mixer which uses a multiple quantum well structure as a nonlinear optical material is provided. There are provided means for providing a first beam of light which propagates through said multiple quantum well structure, and means for providing a second beam of light which also propagates through said multiple quantum well structure and substantially overlaps said first beam of light within said MQW structure. At least one ouput phase conjugate beam of light is produced by interaction of said first and said second beams of light with said multiple quantum well structure. An alternate embodiment has two counterpropagating pump beams and a probe beam of light which produce a backward scattered phase conjugate beam of light.
摘要翻译：提供了一种使用多量子阱结构作为非线性光学材料的四波混频器。提供了用于提供通过所述多量子阱结构传播的第一光束的装置，以及用于提供第二光束的装置，所述第二光束也传播通过所述多量子阱结构并且基本上与所述MQW结构内的所述第一光束重叠。通过所述第一和第二光束与所述多量子阱结构的相互作用产生至少一个输出相位共轭光束。一个替代实施例具有两个反向传播泵浦光束和产生反向散射相位共轭光束的探测光束。

8. 发明授权

US4525687A High speed light modulator using multiple quantum well structures 失效
标题翻译：使用多个量子阱结构的高速光调制器
公开(公告)号：US4525687A
公开(公告)日：1985-06-25
申请号：US558545
申请日：1983-12-02
申请人： Daniel S. Chemla , Theodoor C. Damen , Arthur C. Gossard , David A. B. Miller , Thomas H. Wood
发明人： Daniel S. Chemla , Theodoor C. Damen , Arthur C. Gossard , David A. B. Miller , Thomas H. Wood
IPC分类号： G02F1/017 , H01S5/34 , G02B5/14
CPC分类号： B82Y20/00 , G02F1/017 , H01S5/34
摘要： A semiconductor apparatus is provided. The apparatus has a multiple layer heterostructure having first and second material layers having first and second bandgaps, respectively and a semiconductor layer of a third bandgap being fabricated between said material layers, the bottom of the conduction band of said semiconductor layer is below the bottom of the conduction band of said material layers, and the top of the valence band of said semiconductor layer is above the top of the valence band of said material layers, the thickness of said semiconductor layer is chosen sufficient for carrier confinement effects within said semiconductor layer to influence the optical properties of said multiple layer heterostructure, and means for applying an electric field to the multiple layer heterostructure in order to vary an optical absorption coefficient and an index of refraction of the multiple layer heterostructure in response to the electric field. The apparatus is adapted for use as an optical absorption modulator or optical phase modulator, or as an electrically tuned Fabry-Perot cavity or as a polarization modulator, or as a nonlinear or bistable apparatus in which the operating point is varied by application of an electric field.
摘要翻译：提供一种半导体装置。该装置具有多层异质结构，其具有分别具有第一和第二带隙的第一和第二材料层，并且在所述材料层之间制造第三带隙的半导体层，所述半导体层的导带的底部低于所述材料层的导带和所述半导体层的价带的顶部高于所述材料层的价带的顶部，所述半导体层的厚度被选择为足以用于在所述半导体层内的载流子约束效应影响所述多层异质结构的光学性质，以及用于向多层异质结构施加电场以便响应于电场改变多层异质结构的光吸收系数和折射率的装置。该装置适合用作光吸收调制器或光相位调制器，或用作电调制的法布里 - 珀罗腔或作为偏振调制器，或者用作非线性或双稳态装置，其中工作点通过施加电领域。

9. 发明授权

US5008717A Semiconductor device including cascaded modulation-doped quantum well heterostructures 失效
标题翻译：包括级联调制掺杂量子阱异质结构的半导体器件
公开(公告)号：US5008717A
公开(公告)日：1991-04-16
申请号：US322958
申请日：1989-03-03
申请人： Israel Bar-Joseph , Tao-Yuan Chang , Daniel S. Chemla
发明人： Israel Bar-Joseph , Tao-Yuan Chang , Daniel S. Chemla
IPC分类号： G02F1/015 , G02F1/017 , H01S5/00
CPC分类号： B82Y20/00 , G02F1/01725 , G02F1/01708 , G02F2001/0175
摘要： Modulation-doped quantum well heterostructures are cascaded in a semiconductor device to achieve high speed operation while obtaining large index of refraction or absorption coefficient changes for modulating lightwave signals without significant increases in the operating potentials over prior quantum well structures. Each modulation-doped quantum well heterostructure exhibits substantially equal boundary conditions in an unbiased condition for efficient cascading or stacking. Each quantum well has associated with it a barrier layer to minimize leakage current. As a result, each quantum well has associated with it a separate charge reservoir. This aspect contributes to the speed of the cascaded structure. When incorporated within a waveguide structure, cascaded modulation-doped quantum well heterostructures can act as an external modulator, or as an intra-cavity wavelength tuning element, or as an intra-cavity modulator, or even as an optically-pumped laser.
摘要翻译：调制掺杂的量子阱异质结构在半导体器件中级联以实现高速操作，同时获得大的折射率或用于调制光波信号的吸收系数变化，而不会超过现有量子阱结构的操作电位的显着增加。每个调制掺杂的量子阱异质结构在无偏置条件下表现出基本相等的边界条件，用于有效的级联或堆叠。每个量子阱与其相关联的阻挡层以最小化泄漏电流。因此，每个量子阱都与一个单独的电荷储层相关联。这个方面有助于级联结构的速度。当结合在波导结构中时，级联调制掺杂的量子阱异质结构可以用作外部调制器，或者作为腔内波长调谐元件，或作为腔内调制器，或者甚至作为光泵浦激光器。

10. 发明授权

US4549788A Intensity of a light beam applied to a layered semiconductor structure controls the beam 失效
标题翻译：施加到分层半导体结构的光束的强度控制光束
公开(公告)号：US4549788A
公开(公告)日：1985-10-29
申请号：US455461
申请日：1983-01-03
申请人： Daniel S. Chemla
发明人： Daniel S. Chemla
IPC分类号： G02F1/015 , G02F1/017 , G02F1/19 , G02F1/35 , G02F1/29
CPC分类号： B82Y20/00 , G02F1/01716 , G02F1/3511
摘要： An optical device includes a layered semiconductor structure having a variable input light beam applied to the structure with an E field component polarized normal to the layers. Intensity of the input light beam controls charge trapped in the layers, the dielectric constant of the layers containing the trapped charge, and the propagation of the input light beam within the device.
摘要翻译：光学器件包括分层半导体结构，其具有施加到具有垂直于层的E场分量的结构的可变输入光束。输入光束的强度控制陷入层中的电荷，包含俘获电荷的层的介电常数以及输入光束在器件内的传播。

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