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1. 发明授权

US08268707B2 Gallium nitride for liquid crystal electrodes 有权
标题翻译：液晶电极用氮化镓
公开(公告)号：US08268707B2
公开(公告)日：2012-09-18
申请号：US12817421
申请日：2010-06-17
申请人： Daniel P. Resler , William E. Hoke
发明人： Daniel P. Resler , William E. Hoke
IPC分类号： H01L21/20 , H01L21/36 , H01L31/20
CPC分类号： G02F1/13439 , H01L29/2003 , H01L29/7787
摘要： Described herein is a liquid crystal (LC) device having Gallium Nitride HEMT electrodes. The Gallium Nitride HEMT electrodes can be grown on a variety of substrates, including but not limited to sapphire, silicon carbide, silicon, fused silica (using a calcium fluoride buffer layer), and spinel. Also described is a structure provided from GaN HEMT grown on large area silicon substrates and transferred to another substrate with appropriate properties for OPA devices. Such substrates include, but are not limited to sapphire, silicon carbide, silicon, fused silica (using a calcium fluoride buffer layer), and spinel. The GaN HEMT structure includes an AlN interlayer for improving the mobility of the structure.
摘要翻译：这里描述的是具有氮化镓HEMT电极的液晶（LC）器件。氮化镓HEMT电极可以在各种衬底上生长，包括但不限于蓝宝石，碳化硅，硅，熔融二氧化硅（使用氟化钙缓冲层）和尖晶石。还描述了由在大面积硅衬底上生长的GaN HEMT提供的结构，并将其转移到具有用于OPA器件的适当性质的另一衬底。这样的基底包括但不限于蓝宝石，碳化硅，硅，熔融二氧化硅（使用氟化钙缓冲层）和尖晶石。 GaN HEMT结构包括用于改善结构的迁移率的AlN夹层。

2. 发明申请

US20120299012A1 Gallium Nitride for Liquid Crystal Electrodes 有权
标题翻译：液晶电极用氮化镓
公开(公告)号：US20120299012A1
公开(公告)日：2012-11-29
申请号：US13572157
申请日：2012-08-10
申请人： Daniel P. Resler , William E. Hoke
发明人： Daniel P. Resler , William E. Hoke
IPC分类号： H01L29/20 , H01L29/205
CPC分类号： G02F1/13439 , H01L29/2003 , H01L29/7787
摘要： Described herein is a liquid crystal (LC) device having Gallium Nitride HEMT electrodes. The Gallium Nitride HEMT electrodes can be grown on a variety of substrates, including but not limited to sapphire, silicon carbide, silicon, fused silica (using a calcium flouride buffer layer), and spinel. Also described is a structure provided from GaN HEMT grown on large area silicon substrates and transferred to another substrate with appropriate properties for OPA devices. Such substrates include, but are not limited to sapphire, silicon carbide, silicon, fused silica (using a calcium fluoride buffer layer), and spinel. The GaN HEMT structure includes an AlN interlayer for improving the mobility of the structure.
摘要翻译：这里描述的是具有氮化镓HEMT电极的液晶（LC）器件。氮化镓HEMT电极可以在各种基板上生长，包括但不限于蓝宝石，碳化硅，硅，熔融二氧化硅（使用硅酸钙缓冲层）和尖晶石。还描述了由在大面积硅衬底上生长的GaN HEMT提供的结构，并将其转移到具有用于OPA器件的适当性质的另一衬底。这样的基底包括但不限于蓝宝石，碳化硅，硅，熔融二氧化硅（使用氟化钙缓冲层）和尖晶石。 GaN HEMT结构包括用于改善结构的迁移率的AlN夹层。

3. 发明授权

US08698200B2 Gallium nitride for liquid crystal electrodes 有权
标题翻译：液晶电极用氮化镓
公开(公告)号：US08698200B2
公开(公告)日：2014-04-15
申请号：US13572157
申请日：2012-08-10
申请人： Daniel P. Resler , William E. Hoke
发明人： Daniel P. Resler , William E. Hoke
IPC分类号： H01L29/66
CPC分类号： G02F1/13439 , H01L29/2003 , H01L29/7787
摘要： Described herein is a liquid crystal (LC) device having Gallium Nitride HEMT electrodes. The Gallium Nitride HEMT electrodes can be grown on a variety of substrates, including but not limited to sapphire, silicon carbide, silicon, fused silica (using a calcium flouride buffer layer), and spinel. Also described is a structure provided from GaN HEMT grown on large area silicon substrates and transferred to another substrate with appropriate properties for OPA devices. Such substrates include, but are not limited to sapphire, silicon carbide, silicon, fused silica (using a calcium fluoride buffer layer), and spinel. The GaN HEMT structure includes an AlN interlayer for improving the mobility of the structure.
摘要翻译：这里描述的是具有氮化镓HEMT电极的液晶（LC）器件。氮化镓HEMT电极可以在各种基板上生长，包括但不限于蓝宝石，碳化硅，硅，熔融二氧化硅（使用硅酸钙缓冲层）和尖晶石。还描述了由在大面积硅衬底上生长的GaN HEMT提供的结构，并将其转移到具有用于OPA器件的适当性质的另一衬底。这样的基底包括但不限于蓝宝石，碳化硅，硅，熔融二氧化硅（使用氟化钙缓冲层）和尖晶石。 GaN HEMT结构包括用于改善结构的迁移率的AlN夹层。

4. 发明申请

US20100320474A1 GALLIUM NITRIDE FOR LIQUID CRYSTAL ELECTRODES 有权
标题翻译：用于液晶电极的氮化钠
公开(公告)号：US20100320474A1
公开(公告)日：2010-12-23
申请号：US12817421
申请日：2010-06-17
申请人： Daniel P. Resler , William E. Hoke
发明人： Daniel P. Resler , William E. Hoke
IPC分类号： H01L29/20 , H01L21/335
CPC分类号： G02F1/13439 , H01L29/2003 , H01L29/7787
摘要： Described herein is a liquid crystal (LC) device having Gallium Nitride HEMT electrodes. The Gallium Nitride HEMT electrodes can be grown on a variety of substrates, including but not limited to sapphire, silicon carbide, silicon, fused silica (using a calcium fluoride buffer layer), and spinel. Also described is a structure provided from GaN HEMT grown on large area silicon substrates and transferred to another substrate with appropriate properties for OPA devices. Such substrates include, but are not limited to sapphire, silicon carbide, silicon, fused silica (using a calcium fluoride buffer layer), and spinel. The GaN HEMT structure includes an AlN interlayer for improving the mobility of the structure.
摘要翻译：这里描述的是具有氮化镓HEMT电极的液晶（LC）器件。氮化镓HEMT电极可以在各种衬底上生长，包括但不限于蓝宝石，碳化硅，硅，熔融二氧化硅（使用氟化钙缓冲层）和尖晶石。还描述了由在大面积硅衬底上生长的GaN HEMT提供的结构，并将其转移到具有用于OPA器件的适当性质的另一衬底。这样的基底包括但不限于蓝宝石，碳化硅，硅，熔融二氧化硅（使用氟化钙缓冲层）和尖晶石。 GaN HEMT结构包括用于改善结构的迁移率的AlN夹层。

5. 发明授权

US08031319B1 Hermetic liquid crystal cell and sealing technique 有权
标题翻译：密封液晶和密封技术
公开(公告)号：US08031319B1
公开(公告)日：2011-10-04
申请号：US12474643
申请日：2009-05-29
申请人： Michael R. Benoit , Daniel P. Resler , Steven R. Collins , Robert D. O'Shea
发明人： Michael R. Benoit , Daniel P. Resler , Steven R. Collins , Robert D. O'Shea
IPC分类号： G02F1/1339
CPC分类号： G02F1/1341 , G02F1/13454 , Y10T428/24455
摘要： Described herein are structures and techniques for providing an LC cell having a hermetically sealed cover disposed over a fill hole provided in a superstrate. The superstrate and cover have adhesion layers disposed thereon. Solder is disposed or otherwise provided around the fill hole (e.g. either on the cover or the superstrate or as a separate piece). The cover is then disposed over the fill hole and the solder is reflowed to form the hermetic seal over the fill hole.
摘要翻译：这里描述的是用于提供LC单元的结构和技术，该LC单元具有设置在设置在顶板上的填充孔上的气密密封盖。覆盖物和覆盖层具有设置在其上的粘附层。焊料被设置或以其它方式设置在填充孔周围（例如在盖或覆盖物上或作为单独的片）。然后将盖布置在填充孔上方，并且焊料被回流以在填充孔上形成气密密封。

6. 发明授权

US5093740A Optical beam steerer having subaperture addressing 失效
标题翻译：具有子孔径寻址的光束传感器
公开(公告)号：US5093740A
公开(公告)日：1992-03-03
申请号：US662094
申请日：1991-02-28
申请人： Terry A. Dorschner , Daniel P. Resler
发明人： Terry A. Dorschner , Daniel P. Resler
IPC分类号： G01S7/48 , G02F1/13 , G02F1/1343 , G02F1/29 , H01Q3/26
CPC分类号： G02F1/292 , G02F1/134309 , H01Q3/2676 , G02F2203/24
摘要： A practical means for electrically addressing the extremely large number and high density of phase shifters needed for operation of an optical phased-array beam steerer. The array of phase shifters is divided into identical subarrays which completely fill an optical aperture. All subarrays are connected electrically in parallel by electrically interconnecting corresponding electrodes of each subarray. Thus, the number of external electrical leads required for addressing the full array is reduced to the number of phase shifters in a signle subarray.
摘要翻译：用于电寻址光学相控阵光束转向器操作所需的极大数量和高密度移相器的实用手段。移相器的阵列被分成完全填充光学孔径的相同的子阵列。所有子阵列通过电互连每个子阵列的相应电极并联连接。因此，寻址全阵列所需的外部电引线的数量减少到一个单元子阵列中的移相器的数量。

7. 发明授权

US4964701A Deflector for an optical beam 失效
标题翻译：光束偏转器
公开(公告)号：US4964701A
公开(公告)日：1990-10-23
申请号：US253021
申请日：1988-10-04
申请人： Terry A. Dorschner , Daniel P. Resler
发明人： Terry A. Dorschner , Daniel P. Resler
IPC分类号： G02F1/1345 , G02F1/29
CPC分类号： G02F1/292 , G02F1/1345 , G02F2201/42
摘要： An optical beam phase shifter includes a liquid crystal cell having an optically-transparent common electrode on a first window and a multiplicity of parallel stripe electrodes on the second window. A multiplicity of control signals are applied between the individual stripe electrodes and the common electrode, thereby creating local variations of the refractive index of the liquid crystal molecules, which variations cause differential phase shifts across the cross section of a light beam incident thereon. The control signals are applied to contact pads affixed to an external surface of the liquid crystal cell, which contact pads underlie a plurality of the stripe electrodes. A multiplicity of conductors extend through the second window to couple the control signals to the stripe electrodes. In the first embodiment, the stripe electrodes are optically-transparent, and the incident beam is reflected from the contact pads. In a second embodiment, the stripe electrodes are reflective, and the incident beam is reflected therefrom.

8. 发明授权

US06522433B2 Interference lithography using holey fibers 失效
公开(公告)号：US06522433B2
公开(公告)日：2003-02-18
申请号：US09826470
申请日：2001-04-04
申请人： Adam F. Kelsey , Mark A. Leclerc , Daniel P. Resler
发明人： Adam F. Kelsey , Mark A. Leclerc , Daniel P. Resler
IPC分类号： G03H100
CPC分类号： G02B6/02338 , G02B6/02328 , G02B6/02333 , G02B6/02357 , G02B6/02361 , G02B6/105 , G03F7/70408 , Y10S359/90
摘要： A method and apparatus for interference lithography utilize a fiber having a cladding region with axially formed holes surrounding a core region. The fiber emits an optical signal to perform interference lithography. A number of alternative variations in the size and arrangement of axially formed holes produces fibers having characteristics particularly adapted for receiving, communicating, and emitting optical signals for interference lithography.

9. 发明授权

US4882235A Liquid crystal cell window 失效
标题翻译：液晶电池窗
公开(公告)号：US4882235A
公开(公告)日：1989-11-21
申请号：US162922
申请日：1988-03-02
申请人： Daniel P. Resler
发明人： Daniel P. Resler
IPC分类号： G02B1/02 , G02F1/1333 , G02F1/1343 , G02F3/00 , H01Q3/26
CPC分类号： H01Q3/2676 , G02F1/1333 , G02F1/13439 , Y10S148/084 , Y10T428/12549 , Y10T428/12681
摘要： An optical time delay unit for use in an optical phased array beam-steering system includes a switchable polarization rotator in conjunction with Brewster plates and mirrors to form electrically-selectable optical paths of different lengths. The switchable polarization rotator is aligned with the optical beam and is responsive to a control signal for varying the polarization of light passing therethrough. The Brewster plates receive the light passing through the first polarization rotator and are transmissive to a first polarization and reflective of a second. The transmissive and reflective paths are of different lengths, and are recombined at a second Brewster plate. The original polarization may be restored by a second polarization rotator. A plurality of time delay units may be cascaded to permit selection from among many paths of various lengths. In a preferred embodiment, the polarization rotators include liquid crystal cells having nematic phase molecules. Optically-transparent electrodes are formed on the cell windows by an ion implantation process. A planar phased array beamforming system comprises a plurality of time delay units, illustratively arranged in a 2-by-2 configuration, wherein each unit is illuminated by a corresponding sector of a single light beam.

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