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    • 8. 发明授权
    • Process for synthesis of cubic GaN on GaAs using NH.sub.3 in an RF
plasma process
    • 在RF等离子体工艺中使用NH 3在GaAs上合成立方氮化镓的工艺
    • US5834379A
    • 1998-11-10
    • US680874
    • 1996-07-16
    • James R. ShealyJames R. EngstromYu-Hwa Lo
    • James R. ShealyJames R. EngstromYu-Hwa Lo
    • C23C8/36C23C11/08
    • C23C8/36
    • A process for synthesizing wide band gap materials, specifically, GaN, employs plasma-assisted and thermal nitridation with NH.sub.3 to convert GaAs to GaN. Thermal assisted nitridation with NH.sub.3 can be employed for forming layers of substantial thickness (on the order of 1 micron) of cubic and hexagonal GaN on a GaAs substrate. Plasma-assisted nitridation of NH.sub.3 results in formation of predominantly cubic GaN, a form particularly useful in optoelectronic devices. Preferably, very thin GaAs membranes are employed to permit formation thereon of GaN layers of any desired thickness without concern for critical thickness constraints. The thin membranes are preferably formed either with an epitaxial bonding technique, or by undercut etching.
    • 用于合成宽带隙材料,特别是GaN的方法采用NH 3等离子体辅助和热氮化将GaAs转化为GaN。 使用NH 3的热辅助氮化可用于在GaAs衬底上形成基本上厚度(约1微米)的立方体和六边形GaN的层。 NH 3的等离子体辅助氮化导致主要形成立方GaN,这是在光电器件中特别有用的形式。 优选地,使用非常薄的GaAs膜以允许在其上形成任何所需厚度的GaN层,而不考虑临界厚度限制。 薄膜优选地通过外延键合技术或通过底切蚀刻来形成。