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1. 发明授权

US5940526A Electric field fingerprint sensor having enhanced features and related methods 失效
标题翻译：具有增强特征和相关方法的电场指纹传感器
公开(公告)号：US5940526A
公开(公告)日：1999-08-17
申请号：US858144
申请日：1997-05-16
申请人： Dale R. Setlak , Nicolaas W. Van Vonno , Rex Lowther , Dave Gebauer
发明人： Dale R. Setlak , Nicolaas W. Van Vonno , Rex Lowther , Dave Gebauer
IPC分类号： G01B7/28 , A61B5/117 , G06K9/00 , G06T1/00
CPC分类号： G06K9/0002
摘要： A fingerprint sensor includes a plurality of semiconductor devices adjacent a substrate and defining active circuit portions, and having only three metal layers. More particularly, the sensor may include a first metal layer interconnecting predetermined ones of the plurality of semiconductor devices; a second metal layer defining a ground plane; and a third metal layer comprising an array of electric field sensing electrodes connected to active circuit portions for generating an output related to a sensed fingerprint. The fingerprint sensor may also include a package surrounding the substrate and having an opening aligned with the sensing electrodes. In addition, a first external electrode may be carried by the package for contact by a finger. The sensor may thus also include an excitation drive circuit connected between the ground plane and the first external electrode for generating electric fields between the electric field sensing electrodes and adjacent finger portions. A power control circuit is for controlling operation of active circuit portions based upon sensing finger contact with the first external electrode so that the active circuit portions are powered upon sensing finger contact with the first external electrode and otherwise grounded. A second external electrode may be connected to a bleed resistor to bleed charge from the finger prior to switching from the grounded to the powered state. An amplifier connected between each electric field sensing electrode and associated shield electrode may be operated at a gain of greater than one for additional noise rejection.
摘要翻译：指纹传感器包括与基板相邻并且限定有源电路部分并且仅具有三个金属层的多个半导体器件。更具体地，传感器可以包括互连多个半导体器件中的预定半导体器件的第一金属层; 限定接地平面的第二金属层; 以及第三金属层，包括连接到有源电路部分的电场感测电极的阵列，用于产生与感测的指纹相关的输出。指纹传感器还可以包括围绕衬底并具有与感测电极对准的开口的封装。此外，第一外部电极可以由包装件携带以用手指接触。因此，传感器还可以包括连接在接地平面和第一外部电极之间的激励驱动电路，用于在电场感测电极和相邻的手指部分之间产生电场。功率控制电路用于基于感测到与第一外部电极的手指接触来控制有源电路部分的操作，使得有源电路部分被感测到与第一外部电极的手指接触并以其它方式接地。第二外部电极可以连接到放电电阻器，以在从接地切换到供电状态之前从手指泄放电荷。连接在每个电场感测电极和相关联的屏蔽电极之间的放大器可以以大于1的增益操作以用于附加的噪声抑制。

2. 发明申请

US20110090049A1 FINGER BIOMETRIC SENSOR INCLUDING LATERALLY ADJACENT PIEZOELECTRIC TRANSDUCER LAYER AND ASSOCIATED METHODS 有权
标题翻译：手指生物量传感器，包括侧向压电传感器层及相关方法
公开(公告)号：US20110090049A1
公开(公告)日：2011-04-21
申请号：US12907793
申请日：2010-10-19
申请人： Dale R. Setlak , James W. Neil , Daryl D. Williams , Richard J. Jones , Nicolaas W. Van Vonno
发明人： Dale R. Setlak , James W. Neil , Daryl D. Williams , Richard J. Jones , Nicolaas W. Van Vonno
IPC分类号： G06F7/04 , H01L41/22
CPC分类号： G06K9/00013 , G06K9/0002 , Y10T29/42
摘要： A finger biometric sensor may include a finger biometric sensing layer having an upper major surface and at least one sidewall surface adjacent thereto. The finger biometric layer may be for generating signals related to at least one biometric characteristic of the user's finger when positioned adjacent the first major surface. The finger biometric sensor may also include a piezoelectric transducer layer coupled to the at least one sidewall surface of the finger biometric sensing layer and a plurality of electrically conductive layers coupled to the piezoelectric transducer layer to define transducer electrodes. At least one of the electrically conductive layers may also cooperate with the finger biometric sensing layer for sensing the at least one biometric characteristic.
摘要翻译：手指生物测定传感器可以包括具有上主表面和与其相邻的至少一个侧壁表面的手指生物测定感测层。手指生物测定层可以用于在邻近第一主表面定位时产生与用户手指的至少一个生物特征相关的信号。手指生物测定传感器还可以包括耦合到手指生物测定感测层的至少一个侧壁表面的压电换能器层和耦合到压电换能器层以限定换能器电极的多个导电层。导电层中的至少一个还可以与手指生物测定感测层协作，以感测至少一个生物特征。

3. 发明申请

US20110032077A1 FINGER BIOMETRIC SENSOR INCLUDING LATERALLY ADJACENT PIEZOELECTRIC TRANSDUCER LAYER AND ASSOCIATED METHODS 有权
公开(公告)号：US20110032077A1
公开(公告)日：2011-02-10
申请号：US12537711
申请日：2009-08-07
申请人： Dale R. Setlak , James W. Neil , Daryl D. Williams , Richard J. Jones , Nicolaas W. Van Vonno
发明人： Dale R. Setlak , James W. Neil , Daryl D. Williams , Richard J. Jones , Nicolaas W. Van Vonno
IPC分类号： G06F7/04
CPC分类号： G06K9/00013 , G06K9/0002 , Y10T29/42
摘要： A finger biometric sensor may include a finger biometric sensing layer having an upper major surface and at least one sidewall surface adjacent thereto. The finger biometric layer may be for generating signals related to at least one biometric characteristic of the user's finger when positioned adjacent the first major surface. The finger biometric sensor may also include a piezoelectric transducer layer coupled to the at least one sidewall surface of the finger biometric sensing layer and a plurality of electrically conductive layers coupled to the piezoelectric transducer layer to define transducer electrodes. At least one of the electrically conductive layers may also cooperate with the finger biometric sensing layer for sensing the at least one biometric characteristic.

4. 发明授权

US08618910B2 Finger biometric sensor including laterally adjacent piezoelectric transducer layer and associated methods 有权
公开(公告)号：US08618910B2
公开(公告)日：2013-12-31
申请号：US12537711
申请日：2009-08-07
申请人： Dale R. Setlak , James W. Neil , Daryl D. Williams , Richard J. Jones , Nicolaas W. Van Vonno
发明人： Dale R. Setlak , James W. Neil , Daryl D. Williams , Richard J. Jones , Nicolaas W. Van Vonno
IPC分类号： G06K9/00 , H01L41/00 , G05B19/00
CPC分类号： G06K9/00013 , G06K9/0002 , Y10T29/42
摘要： A finger biometric sensor may include a finger biometric sensing layer having an upper major surface and at least one sidewall surface adjacent thereto. The finger biometric layer may be for generating signals related to at least one biometric characteristic of the user's finger when positioned adjacent the first major surface. The finger biometric sensor may also include a piezoelectric transducer layer coupled to the at least one sidewall surface of the finger biometric sensing layer and a plurality of electrically conductive layers coupled to the piezoelectric transducer layer to define transducer electrodes. At least one of the electrically conductive layers may also cooperate with the finger biometric sensing layer for sensing the at least one biometric characteristic.

5. 发明授权

US08604905B2 Finger biometric sensor including laterally adjacent piezoelectric transducer layer and associated methods 有权
公开(公告)号：US08604905B2
公开(公告)日：2013-12-10
申请号：US12907793
申请日：2010-10-19
申请人： Dale R. Setlak , James W. Neil , Daryl D. Williams , Richard J. Jones , Nicolaas W. Van Vonno
发明人： Dale R. Setlak , James W. Neil , Daryl D. Williams , Richard J. Jones , Nicolaas W. Van Vonno
IPC分类号： G06K9/00 , H01L41/00 , G05B19/00
CPC分类号： G06K9/00013 , G06K9/0002 , Y10T29/42
摘要： A finger biometric sensor may include a finger biometric sensing layer having an upper major surface and at least one sidewall surface adjacent thereto. The finger biometric layer may be for generating signals related to at least one biometric characteristic of the user's finger when positioned adjacent the first major surface. The finger biometric sensor may also include a piezoelectric transducer layer coupled to the at least one sidewall surface of the finger biometric sensing layer and a plurality of electrically conductive layers coupled to the piezoelectric transducer layer to define transducer electrodes. At least one of the electrically conductive layers may also cooperate with the finger biometric sensing layer for sensing the at least one biometric characteristic.

6. 发明授权

US4067038A Substrate fed logic and method of fabrication 失效
标题翻译：基板馈电逻辑和制造方法
公开(公告)号：US4067038A
公开(公告)日：1978-01-03
申请号：US753027
申请日：1976-12-22
申请人： Nicolaas W. Van Vonno
发明人： Nicolaas W. Van Vonno
IPC分类号： H01L21/8222 , H01L21/8226 , H01L27/02 , H01L29/34
CPC分类号： H01L21/8222 , H01L21/8226 , H01L27/0237 , Y10S148/036 , Y10S148/067 , Y10S148/085 , Y10S148/087 , Y10S438/921 , Y10S438/936
摘要： An integrated circuit having a substrate of a first conductivity type, a first layer of opposite conductivity type thereon and a second layer of said first conductivity type inversely graded on said first layer and including a heavily doped region adjacent the surface opposite said first layer. A ring of said opposite conductivity type extends through said second layer and partially into said first layer and a diffused region of said opposite conductivity type is in the surface of said second layer.The method of fabrication includes epitaxially forming said first layer on said substrate, expitaxially forming said second layer on said first layer having a decreasing impurity concentration from the P-N junction to the surface, forming said ring, nonselectively diffusing to increase the impurity concentration at the area adjacent the surface of said second layer and selectively diffusing to form said diffused surface region.
摘要翻译：一种集成电路，其具有第一导电类型的衬底，其上具有相反导电类型的第一层和在所述第一层上反向渐变的所述第一导电类型的第二层，并且包括与所述第一层相对的表面相邻的重掺杂区域。所述相反导电类型的环延伸穿过所述第二层并且部分地延伸到所述第一层中，并且所述相反导电类型的扩散区域在所述第二层的表面中。

7. 发明授权

US07858425B2 Monolithic nuclear event detector and method of manufacture 失效
标题翻译：单片核事件探测器及其制造方法
公开(公告)号：US07858425B2
公开(公告)日：2010-12-28
申请号：US12154212
申请日：2008-05-21
申请人： Thomas J. Sanders , Nicolaas W. Van Vonno , Clyde Combs , Glenn T. Hess
发明人： Thomas J. Sanders , Nicolaas W. Van Vonno , Clyde Combs , Glenn T. Hess
IPC分类号： H01L21/782
CPC分类号： H01L31/115 , H01L31/105 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A PIN diode-based monolithic Nuclear Event Detector and method of manufacturing same for use in detecting a desired level of gamma radiation, in which a PIN diode is integrated with signal processing circuitry, for example CMOS circuitry, in a single thin-film Silicon On Insulator (SOI) chip. The PIN diode is implemented in the p-substrate layer. The signal processing circuitry is located in a thin semiconductor layer and is in electrical communication with the PIN diode. The PIN diode may be integrated with the signal processing circuitry onto a single chip, or may be fabricated stand alone using SOI methods according to the method of the invention.
摘要翻译：基于PIN二极管的单片核事件检测器及其制造方法，用于检测所需的伽马辐射水平，其中PIN二极管与信号处理电路（例如CMOS电路）集成在单个薄膜硅上绝缘体（SOI）芯片。 PIN二极管在p衬底层中实现。信号处理电路位于薄的半导体层中并与PIN二极管电连通。 PIN二极管可以与信号处理电路集成到单个芯片上，或者可以使用根据本发明的方法的SOI方法单独制造。

8. 发明申请

US20080290433A1 Monolithic nuclear event detector and method of manufacture 失效
标题翻译：单片核事件探测器及其制造方法
公开(公告)号：US20080290433A1
公开(公告)日：2008-11-27
申请号：US12154212
申请日：2008-05-21
申请人： Thomas J. Sanders , Nicolaas W. Van Vonno , Clyde Combs , Glenn T. Hess
发明人： Thomas J. Sanders , Nicolaas W. Van Vonno , Clyde Combs , Glenn T. Hess
IPC分类号： H01L27/12 , H01L21/782
CPC分类号： H01L31/115 , H01L31/105 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A PIN diode-based monolithic Nuclear Event Detector and method of manufacturing same for use in detecting a desired level of gamma radiation, in which a PIN diode is integrated with signal processing circuitry, for example CMOS circuitry, in a single thin-film Silicon On Insulator (SOI) chip. The PIN diode is implemented in the p- substrate layer. The signal processing circuitry is located in a thin semiconductor layer and is in electrical communication with the PIN diode. The PIN diode may be integrated with the signal processing circuitry onto a single chip, or may be fabricated stand alone using SOI methods according to the method of the invention.
摘要翻译：基于PIN二极管的单片核事件检测器及其制造方法，用于检测所需的伽马辐射水平，其中PIN二极管与信号处理电路（例如CMOS电路）集成在单个薄膜硅上绝缘体（SOI）芯片。 PIN二极管被实现在p-衬底层中。信号处理电路位于薄的半导体层中并与PIN二极管电连通。 PIN二极管可以与信号处理电路集成到单个芯片上，或者可以使用根据本发明的方法的SOI方法单独制造。

9. 发明授权

US4594265A Laser trimming of resistors over dielectrically isolated islands 失效
标题翻译：在电介质隔离岛上激光微调电阻
公开(公告)号：US4594265A
公开(公告)日：1986-06-10
申请号：US610583
申请日：1984-05-15
申请人： Nicolaas W. Van Vonno , Richard Hull , Paul S. Reinecke
发明人： Nicolaas W. Van Vonno , Richard Hull , Paul S. Reinecke
IPC分类号： H01C17/242 , H01L21/02 , H01L21/268 , H01L21/762 , B05D3/06
CPC分类号： H01L28/24 , H01C17/242 , H01L21/268 , H01L21/76297
摘要： Single crystal dielectrically isolated islands are formed providing a substantially non-reflective or indentured silicon surface before the application of the dielectric isolation layer and the polycrystalline support. Thin film resistor material is formed and delineated on an insulative layer over the single crystal island juxtaposed to the substantially non-reflective bottom dielectric isolation. The thin film resistive layer is trimmed using a laser.
摘要翻译：在施加电介质隔离层和多晶支撑体之前，形成提供基本上非反射或压痕的硅表面的单晶介电隔离岛。薄膜电阻材料在与基本上不反射的底部介电隔离相并列的单晶岛上的绝缘层上形成并描绘。使用激光对薄膜电阻层进行修整。

10. 发明申请

US20110316105A1 Monolithic Nuclear Event Detector and Method of Manufacture 审中-公开
标题翻译：单片核事件检测器及其制造方法
公开(公告)号：US20110316105A1
公开(公告)日：2011-12-29
申请号：US12949313
申请日：2010-11-18
申请人： Thomas J. Sanders , Nicolaas W. Van Vonno , Clyde Combs , Glenn T. Hess
发明人： Thomas J. Sanders , Nicolaas W. Van Vonno , Clyde Combs , Glenn T. Hess
IPC分类号： H01L31/115
CPC分类号： H01L31/115 , H01L21/7624 , H01L31/105 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A PIN diode-based monolithic Nuclear Event Detector and method of manufacturing same for use in detecting a desired level of gamma radiation, in which a PIN diode is integrated with signal processing circuitry, for example CMOS circuitry, in a single thin-film Silicon On Insulator (SOI) chip. The PIN diode is implemented in either a p-, intrinsic, or n-substrate layer. The signal processing circuitry is located in a thin semiconductor layer and is in electrical communication with the PIN diode. The PIN diode may be integrated with the signal processing circuitry onto a single chip, or may be fabricated stand alone using SOI methods according to the method of the invention.
摘要翻译：基于PIN二极管的单片核事件检测器及其制造方法，用于检测所需的伽马辐射水平，其中PIN二极管与信号处理电路（例如CMOS电路）集成在单个薄膜硅上绝缘体（SOI）芯片。 PIN二极管实现在p，本征或n衬底层中。信号处理电路位于薄的半导体层中并与PIN二极管电连通。 PIN二极管可以与信号处理电路集成到单个芯片上，或者可以使用根据本发明的方法的SOI方法单独制造。

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