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    • 1. 发明申请
    • Switching circuit for balancing of battery cell
    • 用于平衡电池单元的开关电路
    • US20070090799A1
    • 2007-04-26
    • US11404286
    • 2006-04-14
    • Dal LeeHan LeeJee KimEguchi Yasuhito
    • Dal LeeHan LeeJee KimEguchi Yasuhito
    • H02J7/00
    • H02J7/0019H01M10/0525
    • Disclosed is a switching circuit for balancing battery cells. The switching circuit includes plural pairs of switching means, each pair of which are connected to each other in parallel and interrupt a flow of electric current in a bi-direction in order to reduce the internal voltage applied to the switching means. According to the present invention, since the switching elements of low internal voltage can be used for the switching circuit, it is possible to constitute the switching circuit for cell balancing without use of switching elements of high internal voltage and to reduce the number of MOSFETs, thereby making it possible to design the switching circuit effectively. Since the MOSFETs having the low internal voltage and low resistance are used for the switching circuit, it is possible to reduce a loss of the electric current due to the resistance during the cell balancing, thereby improving the balancing efficiency and reducing heat generation.
    • 公开了一种用于平衡电池单元的开关电路。 开关电路包括多对开关装置,每对开关装置彼此并联连接并且中断双向电流,以便减小施加到开关装置的内部电压。 根据本发明,由于低内部电压的开关元件可以用于开关电路,所以可以构成用于电池平衡的开关电路,而不使用高内部电压的开关元件并且减少MOSFET的数量, 从而有可能有效地设计开关电路。 由于使用具有低内部电压和低电阻的MOSFET用于开关电路,因此可以减少由于电池平衡期间的电阻而导致的电流损失,从而提高平衡效率并减少发热。
    • 2. 发明申请
    • Apparatus and method to deposit magnesium oxide film on a large area
    • 在大面积上沉积氧化镁薄膜的方法和装置
    • US20050006225A1
    • 2005-01-13
    • US10811946
    • 2004-03-30
    • Young ChoiJee Kim
    • Young ChoiJee Kim
    • H01J9/20C23C14/08C23C14/35B05D5/12C23C14/00
    • C23C14/352C23C14/081
    • An apparatus and method to deposit a MgO film on a large substrate area. The method includes applying a voltage to one or more magnesium targets; applying an electric current to the one or more magnesium targets when the voltage stops increasing so that a power with a negative square wave, which does not cause mutual interfere, is applied to the one or more magnesium targets; and forming a MgO film on a substrate using magnesium particles emitted from the one or more magnesium targets by the power applied. The disclosed apparatus to deposit a MgO film on a large substrate area includes a magnetron part having at least one magnesium target and a permanent magnet; a power control part to apply power to the at least one magnesium target and separately provide control for each of the at least one magnesium target; a flow control part to supply gases for the at least one magnesium target; a substrate control part to control a substrate; a vacuum control part to control a vacuum state in a chamber; and a heater control part to maintain temperature in the chamber.
    • 一种在大衬底区域上沉积MgO膜的设备和方法。 该方法包括向一个或多个镁靶施加电压; 当电压停止增加时,向一个或多个镁靶施加电流,使得不会引起相互干扰的负方波的功率施加到一个或多个镁靶; 以及使用通过所施加的电力从所述一个或多个镁靶发射的镁颗粒在基板上形成MgO膜。 所公开的在大基板区域上沉积MgO膜的装置包括具有至少一个镁靶和永磁体的磁控管部分; 功率控制部分,用于向所述至少一个镁靶施加电力,并且分别为所述至少一个镁靶中的每一个分别提供控制; 用于向所述至少一个镁靶供应气体的流量控制部分; 用于控制衬底的衬底控制部分; 真空控制部,控制室内的真空状态; 以及加热器控制部件,以保持室内的温度。
    • 9. 发明申请
    • Flip chip light emitting diode and method of manufacturing the same
    • 倒装芯片发光二极管及其制造方法
    • US20070012939A1
    • 2007-01-18
    • US11412984
    • 2006-04-28
    • Seok HwangJe KimYoung ParkKun KoJee KimJung ParkBok Min
    • Seok HwangJe KimYoung ParkKun KoJee KimJung ParkBok Min
    • H01L33/00H01L21/00
    • H01L33/08H01L33/32H01L33/38H01L2933/0016
    • The present invention relates to a flip chip light emitting diode, in which the flow of current concentrated on a portion adjacent to an n-type electrode can be induced into the center of a light emitting section and a current-spreading effect is accordingly enhanced, thereby increasing light emission efficiency of a light emitting diode chip, and a method of manufacturing the same. The method of manufacturing a flip chip light emitting diode includes sequentially forming an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on an optically-transparent substrate; etching predetermined regions of the active layer and p-type nitride semiconductor layer and exposing a plurality of regions of the n-type nitride semiconductor layer so as to form a plurality of mesas; etching predetermined regions of the active layer and p-type nitride semiconductor layer positioned between the formed mesas and exposing the plurality of regions of the n-type nitride semiconductor layer so as to form a plurality of grooves; forming an insulating layer on the surface of the groove; forming a p-type electrode across the insulating layer formed on the upper portion of the p-type nitride semiconductor layer and the surface of the groove; and forming an n-type electrode on the formed mesa.
    • 倒装芯片发光二极管技术领域本发明涉及一种倒装芯片发光二极管,其中集中在与n型电极相邻的部分上的电流可以被感应到发光部分的中心,从而相应地提高了电流扩展效果, 从而提高发光二极管芯片的发光效率及其制造方法。 制造倒装芯片发光二极管的方法包括在光学透明基板上依次形成n型氮化物半导体层,有源层和p型氮化物半导体层; 蚀刻有源层和p型氮化物半导体层的预定区域,并露出n型氮化物半导体层的多个区域以形成多个台面; 蚀刻位于形成的台面之间的有源层和p型氮化物半导体层的预定区域,并暴露出n型氮化物半导体层的多个区域以形成多个沟槽; 在所述槽的表面上形成绝缘层; 在形成在p型氮化物半导体层的上部和沟槽的表面上的绝缘层上形成p型电极; 并在形成的台面上形成n型电极。