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    • 6. 发明申请
    • Hydrogenated Block Copolymers and Crosslinking Compositions Containing the Same
    • 氢化嵌段共聚物和含有它的交联组合物
    • US20100087559A1
    • 2010-04-08
    • US12375672
    • 2007-08-07
    • Yasuhiro KusanoseMasahiro FujiwaraDaisuke Shimizu
    • Yasuhiro KusanoseMasahiro FujiwaraDaisuke Shimizu
    • C08F136/04C08F8/04C08L53/02
    • C08F8/04C08F297/04C08L51/006C08L53/025C08L67/02C08L69/00C08L2666/02C08L2666/24C08L2666/04
    • A hydrogenated block copolymer obtained by selective hydrogenation of a block copolymer comprising at least two polymer blocks (A) which each comprise vinyl aromatic monomer units as the main component and may be the same or different from each other, at least two polymer blocks (B) which each comprise monomer units derived from a conjugated diene of 5 or more carbon atoms as the main component and may be the same or different from each other, and one or more polymer blocks (C) which each comprise monomer units derived from a conjugated diene of 4 or more carbon atoms as the main component and may be the same or different from each other and/or one or more random copolymer blocks (D) which each comprise monomer units (d-1) derived from a conjugated diene of 4 or more carbon atoms and vinyl aromatic monomer units (d-2) as the main components, wherein the degree of hydrogenation of olefinically unsaturated double bonds of the blocks (B) is 50% or below; the degrees of hydrogenation of olefinically unsaturated double bonds of the blocks (C) and (D) are 80% or above; the content of vinyl aromatic monomer units in the block copolymer is 10 to 85% by weight; the contents of A, B, C and D in the block copolymer are 10 to 70% by weight, 1 to 15% by weight, 0 to 85% by weight and 0 to 85% by weight respectively with the proviso that the sum of C and D is 25 to 85% by weight and the sum total of A, B, C and D is 100% by weight; and the weight-average molecular weight (M) of A satisfies the relationship: M≧20000/[l+{content (%) of (d-2)}/20].
    • 通过选择性氢化包含至少两个聚合物嵌段(A)的嵌段共聚物获得的氢化嵌段共聚物,它们各自包含乙烯基芳族单体单元作为主要组分,并且可以彼此相同或不同,至少两个聚合物嵌段(B ),其各自包含衍生自5个或更多个碳原子的共轭二烯作为主要成分的单体单元,并且可以彼此相同或不同,并且一个或多个聚合物嵌段(C)各自包含衍生自共轭 具有4个或更多个碳原子的二烯作为主要组分,并且可以彼此相同或不同,和/或一种或多种无规共聚物嵌段(D),其各自包含衍生自共轭二烯的单体单元(d-1)4 或更多的碳原子和乙烯基芳族单体单元(d-2)作为主要成分,其中嵌段(B)的烯属不饱和双键的氢化度为50%以下; 嵌段(C)和(D)的烯属不饱和双键的氢化度为80%以上; 嵌段共聚物中乙烯基芳族单体单元的含量为10〜85重量% 嵌段共聚物中A,B,C和D的含量分别为10〜70重量%,1〜15重量%,0〜85重量%,0〜85重量%,条件是 C和D为25〜85重量%,A,B,C和D的总和为100重量% 并且A的重均分子量(M)满足关系:M≥20000/ [1 + {(d-2)的含量(%)} / 20]。
    • 9. 发明申请
    • METHODS OF POLYMERS DEPOSITION FOR FORMING REDUCED CRITICAL DIMENSIONS
    • 聚合物沉积形成减少关键尺寸的方法
    • US20130122707A1
    • 2013-05-16
    • US13656589
    • 2012-10-19
    • Daisuke ShimizuJong Mun Kim
    • Daisuke ShimizuJong Mun Kim
    • H01L21/31H01L21/302
    • H01L21/02118B05D1/62B05D5/00H01L21/02274H01L21/0273H01L21/0332H01L21/0337
    • Methods of polymer deposition for forming reduced critical dimensions are described. In one embodiment, a substrate is provided into a chamber, the substrate having a patterned layer disposed on an underlying layer formed thereon. The patterned layer includes a plurality of openings, each opening having a sidewall, a bottom, and a critical dimension. A gas mixture is provided into the chamber, the gas mixture having an etching gas and a polymer control gas. The polymer control gas includes a polymerizing fluorocarbon CxFy gas and a C—H bond containing gas. A plasma is formed with the gas mixture and a conformal polymer layer is deposited in the presence of the plasma on the patterned layer to form a reduced critical dimension in each opening. The reduced critical dimension is smaller than the corresponding critical dimension of the opening.
    • 描述了用于形成降低的临界尺寸的聚合物沉积的方法。 在一个实施例中,将衬底提供到腔室中,衬底具有设置在其上形成的下层上的图案层。 图案化层包括多个开口,每个开口具有侧壁,底部和临界尺寸。 气体混合物被提供到室中,气体混合物具有蚀刻气体和聚合物控制气体。 聚合物控制气体包括聚合碳氟化合物CxFy气体和含C-H键的气体。 用气体混合物形成等离子体,并且在等离子体存在下在图案化层上沉积保形聚合物层,以在每个开口中形成减小的临界尺寸。 减小的临界尺寸小于开口的相应临界尺寸。