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1. 发明申请

US20090213502A1 MAGNETO-RESISTANCE EFFECT ELEMENT HAVING STACK WITH DUAL FREE LAYER AND A PLURALITY OF BIAS MAGNETIC LAYERS 审中-公开
标题翻译：具有双层自由层和多重偏磁层的磁阻效应元件
公开(公告)号：US20090213502A1
公开(公告)日：2009-08-27
申请号：US12036530
申请日：2008-02-25
申请人： Daisuke MIYAUCHI , Koji SHIMAZAWA , Tsutomu CHOU , Takahiko MACHITA, I
发明人： Daisuke MIYAUCHI , Koji SHIMAZAWA , Tsutomu CHOU , Takahiko MACHITA, I
IPC分类号： G11B5/33 , G11B5/84
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3932 , H01L43/08 , H01L43/12
摘要： A magneto-resistance effect element comprises: a magneto-resistance effect stack including an upper magnetic layer and a lower magnetic layer whose magnetization directions change in accordance with an external magnetic field, a non-magnetic intermediate layer sandwiched between the upper and lower magnetic layers; an upper shield electrode layer and a lower shield electrode layer which are provided to sandwich the magneto-resistance effect stack therebetween in the direction of stacking the magneto-resistance effect stack, wherein the upper shield electrode layer and the lower shield electrode layer supply sense current in the direction of stacking, and magnetically shield the magneto-resistance effect stack; a first bias magnetic layer which is provided on a surface of the magneto-resistance effect stack opposite to an air bearing surface, and wherein the first bias magnetic layer is magnetized in a direction perpendicular to said air bearing surface; and a pair of second bias magnetic layers provided on respective both sides of said magneto-resistance effect stack in a track width direction, and wherein the second bias magnetic layers are magnetized in a direction substantially parallel to said track width direction; wherein the magnetic pole on a surface of one of said second bias magnetic layers which faces said magneto-resistance effect stack has the same polarity as the magnetic pole on a surface of the other of said second bias magnetic layers which faces said magneto-resistance effect stack, and has a polarity different from the polarity of the magnetic pole on a surface of said first bias magnetic layer which faces said magneto-resistance effect stack.
摘要翻译：磁阻效应元件包括：磁阻效应堆，其包括磁化方向根据外部磁场而变化的上磁性层和下磁性层，夹在上磁层和下磁层之间的非磁性中间层 ; 上屏蔽电极层和下屏蔽电极层，其被设置成在堆叠磁阻效应堆叠的方向上夹着磁阻效应堆叠，其中上屏蔽电极层和下屏蔽电极层提供感测电流在层叠方向上磁屏蔽磁阻效应堆; 第一偏磁层，其设置在与空气轴承表面相对的磁阻效应堆的表面上，并且其中所述第一偏磁层在垂直于所述空气轴承表面的方向上被磁化; 以及一对第二偏置磁性层，其设置在所述磁阻效应叠层的磁道宽度方向的两侧，并且其中所述第二偏置磁性层沿与所述磁道宽度方向大致平行的方向被磁化; 其特征在于，面对所述磁阻效应叠层的所述第二偏置磁性层之一的表面上的磁极具有与所述第二偏置磁性层另一个面对所述磁阻效应的表面上的磁极相同的极性并且具有与面对所述磁阻效应堆叠的所述第一偏磁层的表面上的磁极的极性不同的极性。

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