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1. 发明授权

US07794923B2 Substrate processing method, substrate processing apparatus, and manufacturing method of semiconductor device 失效
标题翻译：基板处理方法，基板处理装置以及半导体装置的制造方法
公开(公告)号：US07794923B2
公开(公告)日：2010-09-14
申请号：US11654565
申请日：2007-01-18
申请人： Eishi Shiobara , Kentaro Matsunaga , Daisuke Kawamura , Tomoyuki Takeishi , Kei Hayasaki , Shinichi Ito
发明人： Eishi Shiobara , Kentaro Matsunaga , Daisuke Kawamura , Tomoyuki Takeishi , Kei Hayasaki , Shinichi Ito
IPC分类号： G03F7/00
CPC分类号： G03F7/70341 , Y10S430/162
摘要： A substrate processing method including while a liquid is supplied between a processing target substrate to be applied with exposure treatment and a projection optical system of an exposure apparatus for carrying out the exposure treatment, prior to providing a resist film on a first main face of the processing target substrate that is provided for liquid immersion exposure for carrying out the exposure treatment at a side to be applied with the exposure treatment, selectively applying at least hydrophobic treatment with respect to a region in a predetermined range from a peripheral rim part of a second main face opposite to the first main face.
摘要翻译：一种基板处理方法，包括在将待施加曝光处理的处理对象基板和用于进行曝光处理的曝光装置的投影光学系统之间提供液体之前，在将抗蚀剂膜提供在第一主面为了进行曝光处理的一侧进行曝光处理而设置的液浸曝光处理对象基板，从第二图像的外围边缘部选择性地施加相对于规定范围的区域的至少疏水处理主面与第一主面相对。

2. 发明申请

US20070042297A1 Resist pattern forming method and manufacturing method of semiconductor device 失效
标题翻译：半导体器件的抗蚀图案形成方法和制造方法
公开(公告)号：US20070042297A1
公开(公告)日：2007-02-22
申请号：US11316898
申请日：2005-12-27
申请人： Eishi Shiobara , Daisuke Kawamura , Yasunobu Onishi , Shinichi Ito
发明人： Eishi Shiobara , Daisuke Kawamura , Yasunobu Onishi , Shinichi Ito
IPC分类号： G03F7/26
CPC分类号： G03F7/11 , G03F7/2041
摘要： According to an aspect of the invention, there is provided a resist pattern forming method of forming a resist pattern by immersion exposure, comprising forming a resist film on a substrate to be treated, a contact angle between the resist film and an immersion liquid being a first angle, forming a first cover film on the resist film, a contact angle between the first cover film and the immersion liquid being a second angle which is larger than the first angle, forming a second cover film on the first cover film, a contact angle between the second cover film and the immersion liquid being a third angle which is smaller than the second angle, and forming a latent image on the resist film by the immersion exposure.
摘要翻译：根据本发明的一个方面，提供了一种通过浸渍曝光形成抗蚀剂图案的抗蚀剂图案形成方法，包括在待处理的基底上形成抗蚀剂膜，所述抗蚀剂膜和浸渍液体之间的接触角为第一角度，在抗蚀剂膜上形成第一覆盖膜，第一覆盖膜和浸渍液体之间的接触角是大于第一角度的第二角度，在第一覆盖膜上形成第二覆盖膜，接触第二覆盖膜和浸液之间的角度是比第二角度小的第三角度，并且通过浸渍曝光在抗蚀剂膜上形成潜像。

3. 发明授权

US07026099B2 Pattern forming method and method for manufacturing semiconductor device 失效
公开(公告)号：US07026099B2
公开(公告)日：2006-04-11
申请号：US10419921
申请日：2003-04-22
申请人： Hirokazu Kato , Yasunobu Onishi , Eishi Shiobara , Daisuke Kawamura , Hiroko Nakamura
发明人： Hirokazu Kato , Yasunobu Onishi , Eishi Shiobara , Daisuke Kawamura , Hiroko Nakamura
IPC分类号： G03F7/00
CPC分类号： H01L21/0279 , G03F7/0035 , H01L21/0275 , H01L21/0277 , H01L21/0278
摘要： A pattern forming method is disclosed which comprises providing a to-be-processed film on a substrate, providing a resist film on the to-be-processed film, patterning the resist film, providing a film of a radiosensitive compound on the to-be-processed film such that the patterned resist film is covered with the film of the radiosensitive compound, subjecting the film of the radiosensitive compound to irradiation and a development process, thus exposing an upper surface of the resist film and patterning the film of the radiosensitive compound, and removing the resist film and processing the to-be-processed film, using the patterned film of the radiosensitive compound as a mask.

4. 发明授权

US07005249B2 Apparatus for processing substrate and method of processing the same 失效
公开(公告)号：US07005249B2
公开(公告)日：2006-02-28
申请号：US11030064
申请日：2005-01-07
申请人： Kenji Kawano , Shinichi Ito , Eishi Shiobara , Daisuke Kawamura , Kei Hayasaki
发明人： Kenji Kawano , Shinichi Ito , Eishi Shiobara , Daisuke Kawamura , Kei Hayasaki
IPC分类号： G03C5/00
CPC分类号： H01L21/6715 , B05C5/0254 , B05C11/08 , G03F7/168 , G03F7/3021 , G03F7/38 , G03F7/70358 , G03F7/70558 , H01L21/67109 , H01L21/67115
摘要： A heating apparatus for a substrate to be processed with a coating film has a chamber with an inner space, a heating plate heating the substrate to be processed in the inner space, and a partition member. The heating plate has a support surface which supports the substrate to be processed within the chamber. The partition member is arranged in the chamber so as to face the support surface. The partition member partitions the inner space into first and second spaces, and has a plurality of pores which allow the first and second spaces to communicate with each other. The support surface of the heating plate is set in the first space. An air stream formation mechanism forming an air stream is arranged in the second space. This mechanism discharges a substance evaporated from the photoresist film.

5. 发明授权

US07005238B2 Apparatus for processing substrate and method of processing the same 失效
公开(公告)号：US07005238B2
公开(公告)日：2006-02-28
申请号：US11030135
申请日：2005-01-07
申请人： Kenji Kawano , Shinichi Ito , Eishi Shiobara , Daisuke Kawamura , Kei Hayasaki
发明人： Kenji Kawano , Shinichi Ito , Eishi Shiobara , Daisuke Kawamura , Kei Hayasaki
IPC分类号： G03C5/00
CPC分类号： H01L21/6715 , B05C5/0254 , B05C11/08 , G03F7/168 , G03F7/3021 , G03F7/38 , G03F7/70358 , G03F7/70558 , H01L21/67109 , H01L21/67115
摘要： A heating apparatus for a substrate to be processed with a coating film has a chamber with an inner space, a heating plate heating the substrate to be processed in the inner space, and a partition member. The heating plate has a support surface which supports the substrate to be processed within the chamber. The partition member is arranged in the chamber so as to face the support surface. The partition member partitions the inner space into first and second spaces, and has a plurality of pores which allow the first and second spaces to communicate with each other. The support surface of the heating plate is set in the first space. An air stream formation mechanism forming an air stream is arranged in the second space. This mechanism discharges a substance evaporated from the photoresist film.

6. 发明授权

US06841404B2 Method for determining optical constant of antireflective layer, and method for forming resist pattern 失效
标题翻译：用于确定抗反射层的光学常数的方法，以及形成抗蚀剂图案的方法
公开(公告)号：US06841404B2
公开(公告)日：2005-01-11
申请号：US10237735
申请日：2002-09-10
申请人： Daisuke Kawamura , Eishi Shiobara
发明人： Daisuke Kawamura , Eishi Shiobara
IPC分类号： G03F7/11 , G03F7/09 , G03F7/20 , G03F7/26 , H01L21/00 , H01L21/027 , H01L21/66
CPC分类号： G03F7/091
摘要： A method for determining an optical constant of an bottom antireflective layer formed between a resist film and an underlying substrate in an optical lithography process in a process for fabricating a semiconductor device, the resist film having an absorption coefficient α′ of 1.5 μm−1 to 3.0 μm−1 with respect to an exposure wavelength, a base of the absorption coefficient α′ being 10, the method includes expressing an nominal dose due to a variation in thickness of the resist film by the sum of a monotonic increase term and a damped oscillation term, and selecting an optical constant of the bottom antireflective layer so that a minimum value closing to a maximum point indicative of a maximum value on a curve of a variation in the nominal dose on a side that the thickness is larger than that at the maximum point is substantially equal to the maximum value, or so that no maximum point exist on the curve wherein, expressing an exposure wavelength by λ and an extinction coefficient of the resist film by κ, the absorption coefficient α′ is a value having the following relationship with the λ and the κ. α ′ = 4 ⁢ ⁢ π ⁢ ⁢ κ λ ⁢ log 10 ⁡ ( exp )
摘要翻译：在制造半导体器件的方法中，在光刻工艺中确定在抗蚀剂膜和下面的衬底之间形成的底部抗反射层的光学常数的方法，所述抗蚀剂膜的吸收系数α'为1.5μm-1 >3.0μm，相对于曝光波长为3.0μm，吸收系数α'的基数为10，该方法包括由于抗蚀剂膜的厚度变化而产生的标称剂量为单调增加的总和并选择阻尼振荡项，并且选择底部抗反射层的光学常数，使得接近最大值的最小值表示在厚度较大的一侧的标称剂量的变化的曲线上的最大值比最大点处的最大值大致等于最大值，或者使曲线上不存在最大点，其中表示曝光波长λ和消光通过κ而得到的抗蚀膜的系数，吸收系数α'是与λ和κ具有以下关系的值。

7. 发明授权

US07973907B2 Method for treating substrate, method for conveying substrate, and apparatus for conveying substrate 失效
标题翻译：处理基板的方法，输送基板的方法以及输送基板的装置
公开(公告)号：US07973907B2
公开(公告)日：2011-07-05
申请号：US12261596
申请日：2008-10-30
申请人： Kentaro Matsunaga , Daisuke Kawamura , Seiro Miyoshi , Eishi Shiobara
发明人： Kentaro Matsunaga , Daisuke Kawamura , Seiro Miyoshi , Eishi Shiobara
IPC分类号： G03B27/52
CPC分类号： G03F7/16
摘要： A method for treating a substrate before exposing the substrate to which a resist is applied, includes, rinsing the substrate to which a resist is applied, and holding the rinsed substrate in an atmosphere. The atmosphere substantially contains no moisture until conveying the substrate to an exposure apparatus.
摘要翻译：在曝光施加有抗蚀剂的基板之前处理基板的方法包括：冲洗施加有抗蚀剂的基板，并将漂洗的基板保持在气氛中。气氛基本上不含湿气，直到将基板输送到曝光装置。

8. 发明申请

US20090115978A1 METHOD FOR TREATING SUBSTRATE, METHOD FOR CONVEYING SUBSTRATE, AND APPARATUS FOR CONVEYING SUBSTRATE 失效
标题翻译：用于处理基板的方法，用于输送基板的方法和用于输送基板的装置
公开(公告)号：US20090115978A1
公开(公告)日：2009-05-07
申请号：US12261596
申请日：2008-10-30
申请人： Kentaro MATSUNAGA , Daisuke Kawamura , Seiro Miyoshi , Eishi Shiobara
发明人： Kentaro MATSUNAGA , Daisuke Kawamura , Seiro Miyoshi , Eishi Shiobara
IPC分类号： G03F7/38
CPC分类号： G03F7/16
摘要： A method for treating a substrate before exposing the substrate to which a resist is applied, includes, rinsing the substrate to which a resist is applied, and holding the rinsed substrate in an atmosphere. The atmosphere substantially contains no moisture until conveying the substrate to an exposure apparatus.
摘要翻译：在曝光施加有抗蚀剂的基板之前处理基板的方法包括：冲洗施加有抗蚀剂的基板，并将漂洗的基板保持在气氛中。气氛基本上不含湿气，直到将基板输送到曝光装置。

9. 发明申请

US20070190462A1 Substrate processing method, substrate processing apparatus, and manufacturing method of semiconductor device 失效
标题翻译：基板处理方法，基板处理装置以及半导体装置的制造方法
公开(公告)号：US20070190462A1
公开(公告)日：2007-08-16
申请号：US11654565
申请日：2007-01-18
申请人： Eishi Shiobara , Kentaro Matsunaga , Daisuke Kawamura , Tomoyuki Takeishi , Kei Hayasaki , Shinichi Ito
发明人： Eishi Shiobara , Kentaro Matsunaga , Daisuke Kawamura , Tomoyuki Takeishi , Kei Hayasaki , Shinichi Ito
IPC分类号： G03F7/20
CPC分类号： G03F7/70341 , Y10S430/162
摘要： A substrate processing method including while a liquid is supplied between a processing target substrate to be applied with exposure treatment and a projection optical system of an exposure apparatus for carrying out the exposure treatment, prior to providing a resist film on a first main face of the processing target substrate that is provided for liquid immersion exposure for carrying out the exposure treatment at a side to be applied with the exposure treatment, selectively applying at least hydrophobic treatment with respect to a region in a predetermined range from a peripheral rim part of a second main face opposite to the first main face.
摘要翻译：一种基板处理方法，包括在将待施加曝光处理的处理对象基板和用于进行曝光处理的曝光装置的投影光学系统之间提供液体之前，在将抗蚀剂膜提供在第一主面为了进行曝光处理的一侧进行曝光处理而设置的液浸曝光处理对象基板，从第二图像的外围边缘部选择性地施加相对于规定范围的区域的至少疏水处理主面与第一主面相对。

10. 发明申请

US20050158670A1 Apparatus for processing substrate and method of processing the same 失效
公开(公告)号：US20050158670A1
公开(公告)日：2005-07-21
申请号：US11030135
申请日：2005-01-07
申请人： Kenji Kawano , Shinichi Ito , Eishi Shiobara , Daisuke Kawamura , Kei Hayasaki
发明人： Kenji Kawano , Shinichi Ito , Eishi Shiobara , Daisuke Kawamura , Kei Hayasaki
IPC分类号： B05C5/02 , B05C9/14 , B05C11/08 , B05D1/40 , B05D3/02 , G03F7/16 , G03F7/20 , G03F7/30 , G03F7/38 , H01L21/00 , H01L21/027 , G03F7/00
CPC分类号： H01L21/6715 , B05C5/0254 , B05C11/08 , G03F7/168 , G03F7/3021 , G03F7/38 , G03F7/70358 , G03F7/70558 , H01L21/67109 , H01L21/67115
摘要： A heating apparatus for a substrate to be processed with a coating film has a chamber with an inner space, a heating plate heating the substrate to be processed in the inner space, and a partition member. The heating plate has a support surface which supports the substrate to be processed within the chamber. The partition member is arranged in the chamber so as to face the support surface. The partition member partitions the inner space into first and second spaces, and has a plurality of pores which allow the first and second spaces to communicate with each other. The support surface of the heating plate is set in the first space. An air stream formation mechanism forming an air stream is arranged in the second space. This mechanism discharges a substance evaporated from the photoresist film.

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