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    • 3. 发明专利
    • Highly dielectric film
    • 高介电胶片
    • JP2014082523A
    • 2014-05-08
    • JP2014004462
    • 2014-01-14
    • Daikin Ind Ltdダイキン工業株式会社
    • TATEMICHI MAYUKOTAKANO NANAKOOTA YOSHIHARUYOKOYA KOJIKOMATSU NOBUYUKIMUKAI ERIKO MEITEN
    • H01G4/18C08J5/18C08K3/20C08L27/16H01B3/44H01B17/56H01G4/20
    • H01B3/445C08J5/18C08J2327/16H01G4/1209H01G4/1254H01G4/18H01G4/186H01G4/20H01G4/206
    • PROBLEM TO BE SOLVED: To provide a highly dielectric film which is improved in specific volume resistance while maintaining a high relative dielectric constant of a VdF-based resin.SOLUTION: A highly dielectric film comprises: a film-forming resin (A); and inorganic material particles (B). The film-forming resin (A) includes a vinylidene fluoride-based resin (a1). The content of the inorganic material particles (B) is 0.01 pts.mass or more and below 10 pts.mass relative to 100 pts.mass of the film-forming resin (A). The inorganic oxide particles (B) are at least one kind of particles selected from the group consisting of (B1) inorganic oxide particles of one metal element of the group II, III, IV, XII or XIII of the periodic table, or particles of an inorganic oxide composite thereof, (B2) inorganic complex oxide particles expressed by the formula (1), MNO(where, Mis a metal element of the group II; N is a metal element of the group IV; a1 is 0.9-1.1; b1 is 0.9-1.1; and c1 is 2.8-3.2, provided that each of Mand N may be more than one metal element), and (B3) inorganic oxide composite particles of an oxide of a metal element of the group II, III, IV, XII or XIII of the periodic table, and a silicon oxide.
    • 要解决的问题:提供一种在保持VdF基树脂的高相对介电常数的同时提高比体积电阻的高电介质膜。解决方案:高介电膜包括:成膜树脂(A); 和无机材料颗粒(B)。 成膜树脂(A)包括偏二氟乙烯类树脂(a1)。 无机材料颗粒(B)的含量相对于100质量%的成膜树脂(A)为0.01质量份以上且低于10质量%。 无机氧化物粒子(B)是选自(B1)周期表第II,III,IV,XII或XIII族的一种金属元素的无机氧化物颗粒中的至少一种颗粒,或 由式(1)表示的(B2)无机复合氧化物颗粒,MNO(其中,第II组的金属元素,N为第IV族的金属元素,a1为0.9-1.1; b1为0.9-1.1; c1为2.8-3.2,条件是Mand N中的每一个可以多于一个金属元素)和(B3)II,III族金属元素的氧化物的无机氧化物复合颗粒, IV,XII或XIII和氧化硅。