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1. 发明专利

JP2005257605A Thin-film magnetic sensor and rotation sensor 有权
标题翻译：薄膜磁传感器和旋转传感器
公开(公告)号：JP2005257605A
公开(公告)日：2005-09-22
申请号：JP2004072408
申请日：2004-03-15
申请人： Daido Steel Co Ltd , Res Inst Electric Magnetic Alloys , 大同特殊鋼株式会社 , 財団法人電気磁気材料研究所
发明人： KOBAYASHI NOBUKIYO , SHIRAKAWA KIWAMU , KANEDA YASUSHI
IPC分类号： G01D5/18 , G01R33/09 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a thin-film magnetic sensor and a rotation sensor using it, which transforms the output from the thin-film magnetic sensor, responding to the angle of rotation of external magnetic field which becomes triangular waves or sine wave/cosine wave-like outputs.
SOLUTION: The thin-film magnetic sensor 20 is equipped with a pair of thin-film yokes 24 and 24 made of soft magnetic material facing each other via a gap 24a, a GMR film 26 with electrical resistivity higher than that of the soft magnetic material formed between the gaps 24a so as to electrically connect a pair of 24 and 24, and an insulated substrate made of an insulation/nonmagnetic material, supporting a pair of thin film yokes 24 and 24, as well as the GMR film 26, while a pair of thin-film yokes 24 and 24 are related as in H
k (x)≥ H
k (y), between the anisotropic magnetic field H
k (x) in the longitudinal direction of gap length and the anisotropic magnetic field H
k (y) in a direction perpendicular to the gap length.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供薄膜磁传感器和使用它的旋转传感器，其响应于变成三角波的外部磁场的旋转角度而使薄膜磁传感器的输出变换，或正弦波/余弦波形输出。解决方案：薄膜磁传感器20配备有一对由软磁材料制成的薄膜磁轭24和24，该薄膜磁轭24和24通过间隙24a彼此相对，电阻率高于形成在间隙24a之间的软磁性材料，以便电连接一对24和24，以及由绝缘/非磁性材料制成的绝缘基板，支撑一对薄膜轭24和24以及GMR膜26 而一对薄膜磁轭24和24如H＆lt; SB＆gt;（x）≥H k（y）中的各向异性磁场H k（y）中，k>（x）。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP2004356338A Thin film magnetic sensor and its manufacturing method 审中-公开
公开(公告)号：JP2004356338A
公开(公告)日：2004-12-16
申请号：JP2003151523
申请日：2003-05-28
申请人： Daido Steel Co Ltd , Res Inst Electric Magnetic Alloys , 大同特殊鋼株式会社 , 財団法人電気磁気材料研究所
发明人： KOBAYASHI NOBUKIYO , SHIRAKAWA KIWAMU , KANEDA YASUSHI
IPC分类号： G01R33/09 , G11B5/31 , G11B5/39 , H01L43/08 , H01L43/12
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3183 , G11B5/3903 , G11B5/3922 , Y10T29/49002
摘要： PROBLEM TO BE SOLVED: To reduce variations of electric contact state between a GMR film and thin film yokes and improve a magnetic field sensitivity in a thin film magnetic sensor which is such that the thin film yokes formed of a soft-magnetic material are located on both sides of the GMR film having an enormous magneto-resistance effect. SOLUTION: The thin film magnetic sensor 20 comprises a pair of a first thin film yoke 24b and a second thin film yoke 24c, which are formed of a soft-magnetic material and are located face to face with each other via a gap 24a, the GMR film 26 which is formed in the gap 24a so that it may be electrically connected with both the first thin film yoke 24b and the second thin film yoke 24c, and an insulation substrate 22 which supports the first thin film yoke 24b, the second thin film yoke 24c, and the GMR film 26. The gap length of the gap 24a is defined by a film thickness of the GMR film 26 deposited on opposed faces of the first thin film yoke 24b and the second thin film yoke 24c. COPYRIGHT: (C)2005,JPO&NCIPI

3. 发明专利

JP2004354181A Thin-film magnetic sensor 有权
公开(公告)号：JP2004354181A
公开(公告)日：2004-12-16
申请号：JP2003151524
申请日：2003-05-28
申请人： Daido Steel Co Ltd , Res Inst Electric Magnetic Alloys , 大同特殊鋼株式会社 , 財団法人電気磁気材料研究所
发明人： KOBAYASHI NOBUKIYO , SHIRAKAWA KIWAMU , KANEDA YASUSHI
IPC分类号： G01R33/09 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To further improve sensitivity in the magnetic field of a GMR film in a thin-film magnetic sensor for arranging a thin-film yoke made of a soft magnetic material at both the sides of the GMR film having gigantic magnetoresistance effect.
SOLUTION: The thin-film magnetic sensor 20 comprises a pair of thin-film yokes 24, 24 that are made of a soft magnetic material and are allowed to oppose via gaps 24a; and the GMR film 26 that is formed between the gaps 24a so that the GMR film 26 can be electrically connected to the thin-film yokes 24, 24. In the thin-film magnetic sensor 20, GL/t
f ratio is 20 or smaller, S
f /S
r ratio is 1 or smaller, (W
m ×t
m /L
2 ) ratio is 0.01 or smaller, FL/GL ratio is 20 or smaller, θ is 40° or higher and 90° or smaller, and/or W
g /W
f is 1 or smaller. Additionally, the tip section of the thin-film yokes 24, 24 may be made of a soft magnetic material having larger saturation magnetization than that of the rear end section.
COPYRIGHT: (C)2005,JPO&NCIPI

4. 发明专利

JP2004363157A Thin film magnetic sensor and its manufacturing method 审中-公开
公开(公告)号：JP2004363157A
公开(公告)日：2004-12-24
申请号：JP2003156551
申请日：2003-06-02
申请人： Daido Steel Co Ltd , Res Inst Electric Magnetic Alloys , 大同特殊鋼株式会社 , 財団法人電気磁気材料研究所
发明人： KOBAYASHI NOBUKIYO , SHIRAKAWA KIWAMU , KANEDA YASUSHI
IPC分类号： G01R33/09 , G11B5/31 , G11B5/39 , H01L43/08 , H01L43/12
CPC分类号： G01R33/09 , G11B5/3163 , G11B5/3183 , G11B5/3925 , Y10T29/49002
摘要： PROBLEM TO BE SOLVED: To restrain electric contact between a GMR film having an extremely large magnetoresistive effect and a thin film yoke from varying in the contact condition so as to make a thin film magnetic sensor stable in magnetic properties, wherein the thin film magnetic sensor is arranged on both sides of the GMR film. SOLUTION: The thin film magnetic sensor 20 is equipped with a pair of the thin film yokes 24 and 24 which are formed of soft magnetic materials and confronted with each other through a gap 24a, the GMR film 26 which is formed in the gap 24a so as to be electrically connected to the thin film yokes 24 and 24, and an insulating board 22 which supports the thin film yokes 24 and 24 and the GMR film 26. A multilayered gap column 23 formed with an insulating non-magnetic material layer and the GMR film 26 layer is provided in the gap 24a, and the GMR film 26 is uniform in thickness in the length of the gap 24a. COPYRIGHT: (C)2005,JPO&NCIPI

5. 发明专利

JP2004354182A Thin-film magnetic sensor and manufacturing method thereof 有权
标题翻译：薄膜磁传感器及其制造方法
公开(公告)号：JP2004354182A
公开(公告)日：2004-12-16
申请号：JP2003151525
申请日：2003-05-28
申请人： Daido Steel Co Ltd , Res Inst Electric Magnetic Alloys , 大同特殊鋼株式会社 , 財団法人電気磁気材料研究所
发明人： KOBAYASHI NOBUKIYO , SHIRAKAWA KIWAMU , KANEDA YASUSHI
IPC分类号： G01R33/09 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a thin-film magnetic sensor for detecting an external magnetic field in a direction vertical to the surface of an insulating substrate, and to provide a method for manufacturing the thin-film magnetic sensor. SOLUTION: The thin-film magnetic sensor 41 comprises a pair of thin-film yokes (A, B) 44a, 44b that are made of a soft magnetic material and are allowed to oppose via a gap 44c; a GMR film 46 that is formed between the gaps 44c so that it is electrically connected to the pair of thin-film yokes (A, B) 44a, 44b, and has electric specific resistance that is higher than that of the soft magnetic material; and the insulating substrate 42 for supporting them. The insulating substrate 42 has a recess 42a on the surface. The thin-film yokes (A, B) 44a, 44b are formed on the side of the recess 42a so that the magnetism-sensitive shaft is not in parallel with the surface of the insulating substrate 42. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于在与绝缘基板的表面垂直的方向上检测外部磁场的薄膜磁传感器，并提供一种制造薄膜磁传感器的方法。解决方案：薄膜磁传感器41包括由软磁性材料制成的一对薄膜磁轭（A，B）44a，44b，并通过间隙44c相对; 形成在间隙44c之间的GMR膜46，使得其与一对薄膜磁轭（A，B）44a，44b电连接，并且具有比软磁性材料高的电阻率; 和用于支撑它们的绝缘基板42。绝缘基板42在表面上具有凹部42a。薄膜轭（A，B）44a，44b形成在凹部42a的侧面上，使得感磁轴不与绝缘衬底42的表面平行。版权所有（C） 2005年，JPO＆NCIPI

6. 发明专利

JP2010067769A Magnetic resistance film, and magnetic recording magnetic head, magnetic sensor and magnetic memory using the same 有权
标题翻译：磁阻电磁铁，磁记录磁头，磁传感器及使用其的磁记忆
公开(公告)号：JP2010067769A
公开(公告)日：2010-03-25
申请号：JP2008232225
申请日：2008-09-10
申请人： Res Inst Electric Magnetic Alloys , 財団法人電気磁気材料研究所
发明人： KOBAYASHI NOBUKIYO , MASUMOTO TAKESHI
IPC分类号： H01L43/08 , G01R33/09 , G11B5/39 , H01F10/16 , H01L21/8246 , H01L27/105
摘要： PROBLEM TO BE SOLVED: To increase the heat resistance of a magnetic resistance film containing a fluoride alloy of magnetic nm-size granule alloy dispersed in an insulation matrix and an unavoidable impurity, exhibiting a 5% or more magnetic resistance ratio at room temperature and having a 1×10
4 μΩcm or more electric resistance rate.
SOLUTION: The composition of the magnetic resistance film is expressed by a formula: Fe
a Co
b Ni
c Si
x M
y F
z . M is one, two or more elements selected from Mg, Al, Ca, Sr, Ba and Gd. The composition ratios of a, b, c, x, y, z are expressed by 0≤a≤60, 0≤b≤60, 0≤c≤60, 20≤a+b+c≤60, 0
摘要翻译：要解决的问题为了提高含有分散在绝缘基体中的磁性纳米粒度合金的氟化物合金和不可避免的杂质的磁阻膜的耐热性，在室内显示出5％以上的磁阻比具有1×10 4 μΩcm以上的电阻率。解决方案：磁阻膜的组成由以下公式表示：Fe a 中号ý˚Fž。 M是选自Mg，Al，Ca，Sr，Ba和Gd中的一种，两种或更多种元素。 a，b，c，x，y，z的组成比由0≤a≤60,0≤b≤60,0≤c≤60,20≤a+ b +c≤60,0

7. 发明专利

JP2003315091A Rotation angle sensor 有权
标题翻译：旋转角传感器
公开(公告)号：JP2003315091A
公开(公告)日：2003-11-06
申请号：JP2002151600
申请日：2002-04-17
申请人： Res Inst Electric Magnetic Alloys , 財団法人電気磁気材料研究所
发明人： KOBAYASHI NOBUKIYO , SHIRAKAWA KIWAMU , MURAKAMI SUSUMU
IPC分类号： G01D5/18
摘要： PROBLEM TO BE SOLVED: To provide a rotation angle sensor of high performance at low cost which is constituted of a GMR thin film and a magnetic thin film, and a position sensor using the turning angle sensor.
SOLUTION: A rotation detector is constituted of the magnetic thin film which is divided into two parts by a gap, the gigantic magnetoresistance thin film formed filling the gap, electric terminals which are electrically connected with the respective two divided parts of the magnetic thin film, and a resistance value measuring part between the electric terminals. As a result, a new rotation angle sensor of high precision is obtained wherein the structure and manufacturing process are simple, the cost is low, high power output and high sensitivity are obtained since the GMR thin film is used, and change of output is excluded to magnetic field change exceeding at least saturation magnetic field of the magnetic thin film.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供由GMR薄膜和磁性薄膜构成的低成本的高性能旋转角度传感器和使用该转向角传感器的位置传感器。解决方案：旋转检测器由被分成两部分的间隙的磁性薄膜构成，填充间隙的巨大的磁阻薄膜，与磁体的相应两个分开的部分电连接的电端子薄膜和电端子之间的电阻值测量部分。结果，获得了高精度的新的旋转角度传感器，其中结构和制造过程简单，由于使用了GMR薄膜，所以成本低，功率输出高，灵敏度高，并且输出变化被排除超过磁性薄膜的至少饱和磁场的磁场变化。版权所有（C）2004，JPO

8. 发明专利

JP2008227081A Magnetic coupler element and magnetic coupling type isolator 有权
标题翻译：磁耦合元件和磁耦合型隔离器
公开(公告)号：JP2008227081A
公开(公告)日：2008-09-25
申请号：JP2007062035
申请日：2007-03-12
申请人： Omron Corp , Res Inst Electric Magnetic Alloys , オムロン株式会社 , 財団法人電気磁気材料研究所
发明人： YAMAMOTO MASAAKI , KARIYA YUICHI , TOYOSHIMA KATSUHISA , KOBAYASHI NOBUKIYO , YANO TAKESHI
IPC分类号： H01L43/08
CPC分类号： H04B5/00 , H01F5/003 , H01L43/08 , H03F3/181 , H03F3/189 , H03F3/45475 , H03F3/45991 , H03F2200/03 , H03F2200/451 , H03F2200/78 , H03F2203/45538 , H03F2203/45554 , H03F2203/45561 , H03F2203/45576 , H03F2203/45591 , H03F2203/45594 , H03F2203/45621
摘要： PROBLEM TO BE SOLVED: To provide a magnetic coupler element and a magnetic coupling type isolator which provides a high S/N ratio even in a high frequency. SOLUTION: A magnetic coupler element 2 comprises a magnetic field generating circuit which contains exciting coils 7a and 7b for generating magnetic fields according to an input current, and a detection bridge circuit which contains at least one pair of magnetoresistive effect elements 9a and 9b that change resistance values when the magnetic field generated at the magnetic field generating circuit is applied, and comprises two outputs 12a and 12b generating voltage differences according to the intensity of the magnetic field generated by the magnetic field generating circuit. Geometrical shapes of the magnetic field generating circuit and the detection bridge circuit are formed in line symmetry or point symmetry. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供即使在高频下也提供高S / N比的磁耦合元件和磁耦合型隔离器。解决方案：磁耦合器元件2包括磁场产生电路，其包含用于根据输入电流产生磁场的励磁线圈7a和7b;以及检测桥电路，其包含至少一对磁阻效应元件9a和 9b，其在施加在磁场产生电路产生的磁场时改变电阻值，并且包括根据由磁场产生电路产生的磁场的强度产生电压差的两个输出端12a和12b。磁场产生电路和检测电路电路的几何形状形成为线对称或点对称。版权所有（C）2008，JPO＆INPIT

9. 发明专利

JP2003078187A Magnetic sensor 审中-公开
标题翻译：磁传感器
公开(公告)号：JP2003078187A
公开(公告)日：2003-03-14
申请号：JP2001316084
申请日：2001-09-05
申请人： Res Inst Electric Magnetic Alloys , 財団法人電気磁気材料研究所
发明人： KOBAYASHI NOBUKIYO , YANO TAKESHI , SHIRAKAWA KIWAMU , ONUMA SHIGEHIRO , MASUMOTO TAKESHI
IPC分类号： G01R33/09 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magnetic sensor in a simple structure with high magnetic field detecting sensitivity capable of detecting the absolute values of the direction and intensity of an impressed field.
SOLUTION: This magnetic field sensor is constituted of a soft magnetic thin film which is divided by an air gap having prescribed air gap length, and provided with prescribed film thickness and prescribed width brought into contact with the air gap and a huge magnetic resistance thin film formed in order to fill the air gap. Then, a prescribed bias magnetic field is impressed to the magnetic sensor so that the size and polarity of the magnetic field can be simultaneously detected, and that the magnetic field sensitivity can be increased.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供具有高磁场检测灵敏度的简单结构的磁传感器，其能够检测印痕场的方向和强度的绝对值。解决方案：该磁场传感器由软磁薄膜构成，该软磁薄膜由具有规定气隙长度的气隙分隔，并具有与气隙接触的规定膜厚和规定宽度，并具有巨大的磁阻薄膜形成以填补气隙。然后，向磁传感器施加规定的偏置磁场，使得可以同时检测磁场的尺寸和极性，并且可以增加磁场灵敏度。

10. 发明专利

JP2008300851A Magnetic coupler element, and magnetic coupling-type isolator 有权
标题翻译：磁耦合元件和磁耦合型隔离器
公开(公告)号：JP2008300851A
公开(公告)日：2008-12-11
申请号：JP2008160780
申请日：2008-06-19
申请人： Omron Corp , Res Inst Electric Magnetic Alloys , オムロン株式会社 , 財団法人電気磁気材料研究所
发明人： YAMAMOTO MASAAKI , KARIYA YUICHI , TOYOSHIMA KATSUHISA , KOBAYASHI NOBUKIYO , YANO TAKESHI
IPC分类号： H01L43/08 , H01F38/14 , H01P1/36 , H04B3/02
摘要： PROBLEM TO BE SOLVED: To provide a magnetic coupler element and a magnetic coupling-type isolator each capable of obtaining a high S/N ratio even in a high frequency. SOLUTION: The magnetic coupler element 2 includes: a magnetic field generating circuit that has exciting coils 7a, 7b generating magnetic field in accordance with input current; and a detection bridge circuit provided with two outputs 12a, 12b generating a voltage difference in response to the intensity of the magnetic field generated by the magnetic field generating circuit wherein the detection bridge circuit has at least one pair of magnetoresistive elements 9a, 9b whose resistances vary by applying the magnetic field generated by the magnetic field generating circuit. The geometrical shapes of the magnetic field generation circuit and the detection bridge circuit are each formed axisymmetrically or point symmetrically. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供即使在高频也能够获得高S / N比的磁耦合元件和磁耦合型隔离器。解决方案：磁耦合元件2包括：具有根据输入电流产生磁场的励磁线圈7a，7b的磁场产生电路; 以及检测桥电路，其具有响应于由磁场产生电路产生的磁场的强度产生电压差的两个输出端12a，12b，其中检测电路电路具有至少一对磁阻元件9a，9b，其电阻通过施加由磁场产生电路产生的磁场而变化。磁场产生电路和检测电路电路的几何形状各自轴对称或对称地形成。版权所有（C）2009，JPO＆INPIT

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