会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 再颁专利
    • Network correction security system and method
    • 网络校正安全系统及方法
    • USRE45381E1
    • 2015-02-17
    • US12954373
    • 2010-11-24
    • Seung-Min LeeTaek-Yong NamSung-Won SohnYe Seok Cho
    • Seung-Min LeeTaek-Yong NamSung-Won SohnChee-Hang Park
    • G06F9/00
    • H04L63/1458
    • A network correction security system. The network correction security system connected between a network node and a security-related external system, detects attacks on the network node, corrects weak parts of the performance of the network node, collects information for improving the security performance of the network node from a security-related external system, analyzes the information, monitors principal resources of the network node to detect a fault, and removes the fault according to a measure corresponding to a grade of the fault. The network correction security system carries out a recovery process when the fault has not been corrected, and recovers the functions of the network node according to a recovery mechanism when the fault has not been removed after the recovery process.
    • 网络校正安全系统。 连接在网络节点和安全相关的外部系统之间的网络校正安全系统,检测对网络节点的攻击,纠正网络节点性能的弱点,从安全性中收集提高网络节点安全性能的信息 相关的外部系统,分析信息,监控网络节点的主要资源以检测故障,并根据与故障等级对应的措施消除故障。 网络校正安全系统在故障未得到纠正的情况下执行恢复过程,并且在恢复过程中还没有删除故障时,根据恢复机制恢复网络节点的功能。
    • 3. 发明申请
    • Network correction security system and method
    • 网络校正安全系统及方法
    • US20050081046A1
    • 2005-04-14
    • US10882749
    • 2004-06-30
    • Seung-Min LeeTaek-Yong NamSung-Won SohnChee-Hang Park
    • Seung-Min LeeTaek-Yong NamSung-Won SohnChee-Hang Park
    • H04L12/22G02F1/00H04L29/06
    • H04L63/1458
    • A network correction security system. The network correction security system connected between a network node and a security-related external system, detects attacks on the network node, corrects weak parts of the performance of the network node, collects information for improving the security performance of the network node from a security-related external system, analyzes the information, monitors principal resources of the network node to detect a fault, and removes the fault according to a measure corresponding to a grade of the fault. The network correction security system carries out a recovery process when the fault has not been corrected, and recovers the functions of the network node according to a recovery mechanism when the fault has not been removed after the recovery process.
    • 网络校正安全系统。 连接在网络节点和安全相关的外部系统之间的网络校正安全系统,检测对网络节点的攻击,纠正网络节点性能的弱点,从安全性中收集提高网络节点安全性能的信息 相关的外部系统,分析信息,监控网络节点的主要资源以检测故障,并根据与故障等级对应的措施消除故障。 网络校正安全系统在故障未得到纠正的情况下执行恢复过程,并且在恢复过程中还没有删除故障时,根据恢复机制恢复网络节点的功能。
    • 4. 发明授权
    • Network correction security system and method
    • 网络校正安全系统及方法
    • US07457949B2
    • 2008-11-25
    • US10882749
    • 2004-06-30
    • Seung-Min LeeTaek-Yong NamSung-Won SohnChee-Hang Park
    • Seung-Min LeeTaek-Yong NamSung-Won SohnChee-Hang Park
    • G06F9/00
    • H04L63/1458
    • A network correction security system. The network correction security system connected between a network node and a security-related external system, detects attacks on the network node, corrects weak parts of the performance of the network node, collects information for improving the security performance of the network node from a security-related external system, analyzes the information, monitors principal resources of the network node to detect a fault, and removes the fault according to a measure corresponding to a grade of the fault. The network correction security system carries out a recovery process when the fault has not been corrected, and recovers the functions of the network node according to a recovery mechanism when the fault has not been removed after the recovery process.
    • 网络校正安全系统。 连接在网络节点和安全相关的外部系统之间的网络校正安全系统,检测对网络节点的攻击,纠正网络节点性能的弱点,从安全性中收集提高网络节点安全性能的信息 相关的外部系统,分析信息,监控网络节点的主要资源以检测故障,并根据与故障等级对应的措施消除故障。 网络校正安全系统在故障未得到纠正的情况下执行恢复过程,并且在恢复过程中还没有删除故障时,根据恢复机制恢复网络节点的功能。
    • 7. 发明申请
    • Thin film thermoelectric module
    • 薄膜热电模块
    • US20060048807A1
    • 2006-03-09
    • US11223284
    • 2005-09-08
    • Seung-Min LeeJeong-Il Kye
    • Seung-Min LeeJeong-Il Kye
    • H01L35/30H01L35/28
    • H01L35/32
    • Disclosed herein is a thin film thermoelectric module. the module includes high and low temperature part module substrates, unit thermoelectric devices, and lead wires. The high and low temperature part module substrates are arranged to face each other. The unit thermoelectric devices are located between the modules to transfer heat between the modules. The lead wires are connected to the electrodes of the unit thermoelectric devices. Each of the unit thermoelectric devices includes a pair of lower and upper substrates, electrodes, and a thermoelectric material. The pair of lower and upper substrates are arranged to face each other. The electrodes are formed on the upper surface of the lower substrate and the lower surface of the upper substrate. The thermoelectric material is disposed between the electrodes.
    • 这里公开了一种薄膜热电模块。 该模块包括高低温部件模块基板,单元热电装置和引线。 高低温部件模块基板被布置成彼此面对。 单元热电装置位于模块之间,以在模块之间传递热量。 引线连接到单元热电装置的电极。 每个单元热电装置包括一对下基板和上基板,电极和热电材料。 一对下基板和上基板布置成彼此面对。 电极形成在下基板的上表面和上基板的下表面上。 热电材料设置在电极之间。
    • 9. 发明授权
    • Non-volatile memory device having a bit line contact pad and method for manufacturing the same
    • 具有位线接触焊盘的非易失性存储器件及其制造方法
    • US06744096B2
    • 2004-06-01
    • US10453943
    • 2003-06-04
    • Seung-Min LeeByung-Hong Chung
    • Seung-Min LeeByung-Hong Chung
    • H01L29788
    • H01L21/76895H01L27/115H01L27/11521
    • A non-volatile memory device and a method for manufacturing the same are disclosed. A non-volatile memory device comprises a semiconductor substrate having active areas which extend in a first direction and are repeatedly arranged in a second direction orthogonal to the first direction, a plurality of word lines formed on the semiconductor substrate which extending in the second direction while being repeatedly arranged in the first direction, string select lines adjacent to a first word line and extending in the second direction, ground select lines adjacent to a last word line and extending in the second direction, a first insulating interlayer formed on the resultant structure and comprising a first opening exposing the active area between the ground select lines and a second opening exposing the active area between the string select lines, a bit line contact pad formed in the second opening. A sidewall of the contact pad comprises a negative slope in the first direction and a positive slope in the second direction. A hard mask layer pattern, having the same pattern size as the active area, is formed on the contact pad and the first insulating interlayer. A second insulating interlayer is formed on the hard mask layer pattern and the first insulating interlayer. The second insulating interlayer has a bit line contact hole on the contact pad and thus the process margin is sufficiently achieved.
    • 公开了一种非易失性存储器件及其制造方法。 一种非易失性存储器件包括:半导体衬底,其具有沿第一方向延伸并且沿与第一方向正交的第二方向重复布置的有源区;多个字线,形成在半导体衬底上,沿第二方向延伸,同时 沿着第一方向重复地布置,与第一字线相邻并且在第二方向上延伸的串选择线,与最后字线相邻并在第二方向上延伸的接地选择线,在所得结构上形成的第一绝缘夹层, 包括暴露所述接地选择线之间的有源区域的第一开口和暴露所述串选择线之间的有源区域的第二开口,形成在所述第二开口中的位线接触焊盘。 接触垫的侧壁包括在第一方向上的负斜率和在第二方向上的正斜率。 在接触焊盘和第一绝缘中间层上形成具有与有源区相同的图案尺寸的硬掩模层图案。 在硬掩模层图案和第一绝缘中间层上形成第二绝缘中间层。 第二绝缘中间层在接触焊盘上具有位线接触孔,因此充分实现了工艺余量。