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1. 发明授权

US07977691B2 Light emitting device and method of manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US07977691B2
公开(公告)日：2011-07-12
申请号：US12630370
申请日：2009-12-03
申请人： Jong Lam Lee , Jae Ho Lee , Yeo Jin Yoon , Eu Jin Hwang , Dae Won Kim
发明人： Jong Lam Lee , Jae Ho Lee , Yeo Jin Yoon , Eu Jin Hwang , Dae Won Kim
IPC分类号： H01L27/15
CPC分类号： H01L27/15 , H01L27/153 , H01L27/3281 , H01L33/08 , H01L33/20 , H01L33/24 , H01L33/28 , H01L33/32 , H01L33/385 , H01L33/44 , H01L33/62 , H01L51/5253 , H01L2224/45144 , H01L2224/48095 , H01L2224/48137 , H01L2933/0066 , H01L2924/00
摘要： The present invention relates to a light emitting device and a method of manufacturing the light emitting device. According to the present invention, the light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20 to 80° from a horizontal plane. Further, the present invention provides a light emitting device comprising a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, and a submount substrate flip-chip bonded onto the substrate, wherein the N-type semiconductor layer of one light emitting cell and the P-type semiconductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20 to 80° from a horizontal plane. Further, the present invention is provides a method of manufacturing the light emitting device. Accordingly, there is an advantage in that the characteristics of a light emitting device such as luminous efficiency, external quantum efficiency and extraction efficiency are enhanced and the reliability is secured such that light with high luminous intensity and brightness can be emitted.
摘要翻译：本发明涉及一种发光器件及其制造方法。根据本发明，发光器件包括衬底，形成在衬底上的N型半导体层和形成在N型半导体层上的P型半导体层，其中包括N型半导体层的侧表面或P型半导体层的水平面为20〜80°的斜率。此外，本发明提供了一种发光器件，其包括形成有多个发光单元的衬底，每个发光单元包括形成在N型半导体层上的N型半导体层和P型半导体层，以及基座衬底翻转芯片接合到基板上，其中一个发光单元的N型半导体层和另一个相邻的发光单元的P型半导体层彼此连接，并且至少包括P型半导体发光单元的层与水平面的倾斜度为20〜80°。此外，本发明提供一种制造发光器件的方法。因此，具有发光效率，外部量子效率，提取效率等发光装置的特性得到提高，可靠性得到确保，能够发出高发光强度和亮度的光的优点。

2. 发明授权

US07951626B2 Light emitting device and method of manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US07951626B2
公开(公告)日：2011-05-31
申请号：US12613275
申请日：2009-11-05
申请人： Jong Lam Lee , Jae Ho Lee , Yeo Jin Yoon , Eu Jin Hwang , Dae Won Kim
发明人： Jong Lam Lee , Jae Ho Lee , Yeo Jin Yoon , Eu Jin Hwang , Dae Won Kim
IPC分类号： H01L27/15
CPC分类号： H01L27/15 , H01L27/153 , H01L27/3281 , H01L33/08 , H01L33/20 , H01L33/24 , H01L33/28 , H01L33/32 , H01L33/385 , H01L33/44 , H01L33/62 , H01L51/5253 , H01L2224/45144 , H01L2224/48095 , H01L2224/48137 , H01L2933/0066 , H01L2924/00
摘要： The present invention relates to a light emitting device and a method of manufacturing the light emitting device. According to the present invention, the light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20 to 80° from a horizontal plane. Further, the present invention provides a light emitting device comprising a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, and a submount substrate flip-chip bonded onto the substrate, wherein the N-type semiconductor layer of one light emitting cell and the P-type semiconductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20 to 80° from a horizontal plane. Further, the present invention provides a method of manufacturing the light emitting device. Accordingly, there is an advantage in that the characteristics of a light emitting device such as luminous efficiency, external quantum efficiency and extraction efficiency are enhanced and the reliability is secured such that light with high luminous intensity and brightness can be emitted.
摘要翻译：本发明涉及一种发光器件及其制造方法。根据本发明，发光器件包括衬底，形成在衬底上的N型半导体层和形成在N型半导体层上的P型半导体层，其中包括N型半导体层的侧表面或P型半导体层的水平面为20〜80°的斜率。此外，本发明提供了一种发光器件，其包括形成有多个发光单元的衬底，每个发光单元包括形成在N型半导体层上的N型半导体层和P型半导体层，以及基座衬底翻转芯片接合到基板上，其中一个发光单元的N型半导体层和另一个相邻的发光单元的P型半导体层彼此连接，并且至少包括P型半导体发光单元的层与水平面的倾斜度为20〜80°。此外，本发明提供一种制造发光器件的方法。因此，具有发光效率，外部量子效率，提取效率等发光装置的特性得到提高，可靠性得到确保，能够发出高发光强度和亮度的光的优点。

3. 发明授权

US07700960B2 Light emitting diode with ITO layer and method for fabricating the same 有权
标题翻译：具有ITO层的发光二极管及其制造方法
公开(公告)号：US07700960B2
公开(公告)日：2010-04-20
申请号：US12605146
申请日：2009-10-23
申请人： Dae Won Kim , Yeo Jin Yoon , Duck Hwan Oh , Jong Hwan Kim
发明人： Dae Won Kim , Yeo Jin Yoon , Duck Hwan Oh , Jong Hwan Kim
IPC分类号： H01L33/00 , H01L27/15
CPC分类号： H01L33/42 , H01L27/153 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a light emitting diode with enhanced luminance and light emitting performance due to increase in efficiency of current diffusion into an ITO layer, and a method of fabricating the light emitting diode. According to the present invention, there is manufactured at least one light emitting cell including an N-type semiconductor layer, an active layer and a P-type semiconductor layer on a substrate. The method of the present invention comprises the steps of (a) forming at least one light emitting cell with an ITO layer formed on a top surface of the P-type semiconductor layer; (b) forming a contact groove for wiring connection in the ITO layer through dry etching; and (c) filling the contact groove with a contact connection portion made of a conductive material for the wiring connection.
摘要翻译：本发明涉及一种具有增强的亮度和发光性能的发光二极管，由于电流扩散到ITO层中的效率的提高，以及制造该发光二极管的方法。根据本发明，在衬底上制造至少一个包括N型半导体层，有源层和P型半导体层的发光单元。本发明的方法包括以下步骤：（a）在P型半导体层的顶表面上形成至少一个具有ITO层的发光单元; （b）通过干蚀刻形成用于在ITO层中布线连接的接触槽; 和（c）用接线连接用导电材料制成的接触连接部分填充接触槽。

4. 发明申请

US20100006870A1 LIGHT EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20100006870A1
公开(公告)日：2010-01-14
申请号：US12568630
申请日：2009-09-28
申请人： Jong Lam Lee , Jae Ho Lee , Yeo Jin Yoon , Eu Jin Hwang , Dae Won Kim
发明人： Jong Lam Lee , Jae Ho Lee , Yeo Jin Yoon , Eu Jin Hwang , Dae Won Kim
IPC分类号： H01L33/00
CPC分类号： H01L27/15 , H01L27/153 , H01L27/3281 , H01L33/08 , H01L33/20 , H01L33/24 , H01L33/28 , H01L33/32 , H01L33/385 , H01L33/44 , H01L33/62 , H01L51/5253 , H01L2224/45144 , H01L2224/48095 , H01L2224/48137 , H01L2933/0066 , H01L2924/00
摘要： The present invention relates to a light emitting device. According to the present invention, the light emitting device comprises a substrate, a plurality of light emitting cells disposed on the substrate, a first insulation layer disposed on each light emitting cell, an electrically conductive material disposed on the first insulation layer to couple two of the light emitting cells, and a second insulation layer disposed on the electrically conductive material. Each light emitting cell comprises a first semiconductor layer, a second semiconductor layer, and an inclined surface. The second insulation layer corresponds to a contour of each light emitting cell.
摘要翻译：本发明涉及一种发光装置。根据本发明，发光器件包括衬底，设置在衬底上的多个发光单元，设置在每个发光单元上的第一绝缘层，设置在第一绝缘层上的导电材料，以将两个所述发光单元以及设置在所述导电材料上的第二绝缘层。每个发光单元包括第一半导体层，第二半导体层和倾斜表面。第二绝缘层对应于每个发光单元的轮廓。

5. 发明申请

US20080251796A1 Light Emitting Device and Method of Manufacturing the Same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20080251796A1
公开(公告)日：2008-10-16
申请号：US11993965
申请日：2006-06-22
申请人： Jong Lam Lee , Jae Ho Lee , Yeo Jin Yoon , Eu Jin Hwang , Dae Won Kim
发明人： Jong Lam Lee , Jae Ho Lee , Yeo Jin Yoon , Eu Jin Hwang , Dae Won Kim
IPC分类号： H01L33/00
CPC分类号： H01L27/15 , H01L27/153 , H01L27/3281 , H01L33/08 , H01L33/20 , H01L33/24 , H01L33/28 , H01L33/32 , H01L33/385 , H01L33/44 , H01L33/62 , H01L51/5253 , H01L2224/45144 , H01L2224/48095 , H01L2224/48137 , H01L2933/0066 , H01L2924/00
摘要： The present invention relates to a light emitting device and a method of manufacturing the light emitting device. According to the present invention, the light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20 to 80° from a horizontal plane. Further, the present invention provides a light emitting device comprising a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, and a submount substrate flip-chip bonded onto the substrate, wherein the N-type semiconductor layer of one light emitting cell and the P-type semi-conductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20 to 80° from a horizontal plane. Further, the present invention provides a method of manufacturing the light emitting device. Accordingly, there is an advantage in that the characteristics of a light emitting device such as luminous efficiency, external quantum efficiency and extraction efficiency are enhanced and the reliability is secured such that light with high luminous intensity and brightness can be emitted.
摘要翻译：本发明涉及一种发光器件及其制造方法。根据本发明，发光器件包括衬底，形成在衬底上的N型半导体层和形成在N型半导体层上的P型半导体层，其中包括N型半导体层的侧表面或P型半导体层的水平面为20〜80°的斜率。此外，本发明提供了一种发光器件，其包括形成有多个发光单元的衬底，每个发光单元包括形成在N型半导体层上的N型半导体层和P型半导体层，以及基座衬底翻转芯片接合到基板上，其中一个发光单元的N型半导体层和另一个相邻发光单元的P型半导体层彼此连接，并且至少包括P- 发光单元的半导体层的类型与水平面的斜率为20〜80°。此外，本发明提供一种制造发光器件的方法。因此，具有发光效率，外部量子效率，提取效率等发光装置的特性得到提高，可靠性得到确保，能够发出高发光强度和亮度的光的优点。

6. 发明申请

US20100044744A1 LIGHT EMITTING DIODE HAVING EXTENSIONS OF ELECTRODES FOR CURRENT SPREADING 有权
标题翻译：具有电流扩展电极的发光二极管
公开(公告)号：US20100044744A1
公开(公告)日：2010-02-25
申请号：US12442267
申请日：2006-09-25
申请人： Dae Won Kim , Yeo Jin Yoon
发明人： Dae Won Kim , Yeo Jin Yoon
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/20
摘要： Disclosed is a light emitting diode having extensions of electrodes for improving current spreading. The light emitting diode includes a lower semiconductor layer, an upper semiconductor layer and an active layer, which are formed on a substrate. The upper semiconductor layer is located above the lower semiconductor layer such that edge regions of the lower semiconductor layer are exposed, and has indents indented in parallel with diagonal directions from positions in the edge regions adjacent to corners of the substrate in a clockwise or counterclockwise direction to expose the lower semiconductor layer. The indents have distal ends spaced apart from each other. Meanwhile, a lower electrode is formed on the exposed region of the lower semiconductor layer corresponding to the first corner of the substrate, and an upper electrode is formed on a transparent electrode layer on the semiconductor layer. Lower extensions extending from the lower electrode are formed on the exposed edge regions of the lower semiconductor layer and on the regions of the lower semiconductor layer exposed through the indents. An upper extension extending from the upper electrode are formed on the transparent electrode layer. The lower and upper extensions improve current spreading, particularly, in a light emitting diode with a large area.
摘要翻译：公开了一种具有用于改善电流扩展的电极延伸的发光二极管。发光二极管包括形成在基板上的下半导体层，上半导体层和有源层。上半导体层位于下半导体层之上，使得下半导体层的边缘区域被暴露，并且具有从与基板的角部相邻的边缘区域中的顺时针或逆时针方向的位置与对角线方向平行缩进的凹口以暴露下半导体层。凹痕的远端彼此间隔开。同时，在与半导体层的第一角对应的下半导体层的露出区上形成下电极，在半导体层上的透明电极层上形成上电极。在下半导体层的暴露的边缘区域和通过凹口暴露的下半导体层的区域上形成从下电极延伸的下延伸部。在透明电极层上形成从上部电极延伸的上延伸部。下延伸和上延伸改善电流扩散，特别是在具有大面积的发光二极管中。

7. 发明授权

US08232565B2 Light emitting diode for AC operation 有权
标题翻译：用于交流操作的发光二极管
公开(公告)号：US08232565B2
公开(公告)日：2012-07-31
申请号：US12607644
申请日：2009-10-28
申请人： Chung Hoon Lee , Dae Won Kim , Dae Sung Kal , Won Cheol Seo , Kyung Hee Ye , Yeo Jin Yoon
发明人： Chung Hoon Lee , Dae Won Kim , Dae Sung Kal , Won Cheol Seo , Kyung Hee Ye , Yeo Jin Yoon
IPC分类号： H01L33/00
CPC分类号： H01L27/153 , H01L33/20 , H01L33/62 , H01L2224/48 , H05B33/0821
摘要： The present invention discloses a light emitting diode (LED) including a plurality of light emitting cells arranged on a substrate. The LED includes half-wave light emitting units each including at least one light emitting cell, each half-wave light emitting unit including first and second terminals respectively arranged at both ends thereof; and full-wave light emitting units each including at least one light emitting cell, each full-wave light emitting units including third and fourth terminals respectively formed at both ends thereof. The third terminal of each full-wave light emitting unit is electrically connected to the second terminals of two half-wave light emitting units, and the fourth terminal of each full-wave light emitting unit is electrically connected to the first terminals of other two half-wave light emitting units. Also, a first half-wave light emitting unit is connected in series between the third terminal of a first full-wave light emitting unit and the fourth terminal of a second full-wave light emitting units, and a second half-wave light emitting units is connected in series between the fourth terminal of the first full-wave light emitting unit and the third terminal of the second full-wave light emitting unit.
摘要翻译：本发明公开了一种发光二极管（LED），其包括布置在基板上的多个发光单元。 LED包括每个包括至少一个发光单元的半波发光单元，每个半波发光单元包括分别布置在其两端的第一和第二端子; 和全波发光单元，每个包括至少一个发光单元，每个全波发光单元包括分别在其两端形成的第三和第四端子。每个全波发光单元的第三端子电连接到两个半波发光单元的第二端子，并且每个全波发光单元的第四端子电连接到另外两个半波发光单元的第一端子波发光单元。此外，第一半波发光单元串联连接在第一全波发光单元的第三端子和第二全波发光单元的第四端子之间，并且第二半波发光单元串联连接在第一全波发光单元的第四端子和第二全波发光单元的第三端子之间。

8. 发明授权

US08076688B2 Light emitting diode having extensions of electrodes for current spreading 有权
标题翻译：具有用于电流扩散的电极延伸的发光二极管
公开(公告)号：US08076688B2
公开(公告)日：2011-12-13
申请号：US12442267
申请日：2006-09-25
申请人： Dae Won Kim , Yeo Jin Yoon
发明人： Dae Won Kim , Yeo Jin Yoon
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/20
摘要： Disclosed is a light emitting diode having extensions of electrodes for improving current spreading. The light emitting diode includes a lower semiconductor layer, an upper semiconductor layer and an active layer, which are formed on a substrate. The upper semiconductor layer is located above the lower semiconductor layer such that edge regions of the lower semiconductor layer are exposed, and has indents indented in parallel with diagonal directions from positions in the edge regions adjacent to corners of the substrate in a clockwise or counterclockwise direction to expose the lower semiconductor layer. The indents have distal ends spaced apart from each other. Meanwhile, a lower electrode is formed on the exposed region of the lower semiconductor layer corresponding to the first corner of the substrate, and an upper electrode is formed on a transparent electrode layer on the semiconductor layer. Lower extensions extending from the lower electrode are formed on the exposed edge regions of the lower semiconductor layer and on the regions of the lower semiconductor layer exposed through the indents. An upper extension extending from the upper electrode are formed on the transparent electrode layer. The lower and upper extensions improve current spreading, particularly, in a light emitting diode with a large area.
摘要翻译：公开了一种具有用于改善电流扩展的电极延伸的发光二极管。发光二极管包括形成在基板上的下半导体层，上半导体层和有源层。上半导体层位于下半导体层之上，使得下半导体层的边缘区域被暴露，并且具有从与基板的角部相邻的边缘区域中的顺时针或逆时针方向的位置与对角线方向平行缩进的凹口以暴露下半导体层。凹痕的远端彼此间隔开。同时，在与半导体层的第一角对应的下半导体层的露出区上形成下电极，在半导体层上的透明电极层上形成上电极。在下半导体层的暴露的边缘区域和通过凹口暴露的下半导体层的区域上形成从下电极延伸的下延伸部。在透明电极层上形成从上部电极延伸的上延伸部。下延伸和上延伸改善电流扩散，特别是在具有大面积的发光二极管中。

9. 发明授权

US07768020B2 AC light emitting diode 有权
标题翻译：交流发光二极管
公开(公告)号：US07768020B2
公开(公告)日：2010-08-03
申请号：US12515869
申请日：2007-03-13
申请人： Dae Won Kim , Yeo Jin Yoon , Dae Sung Kal
发明人： Dae Won Kim , Yeo Jin Yoon , Dae Sung Kal
IPC分类号： H01L29/18 , H01L33/00
CPC分类号： H01L27/15 , H01L33/62 , H01L2224/48137 , H01L2224/48091 , H01L2924/00014
摘要： Disclosed herein is an AC light emitting diode. The light emitting diode comprises a plurality of light emitting cells two-dimensionally arranged on a single substrate. Wires electrically connect the light emitting cells to one another to thereby form a serial array of the light emitting cells. Further, the light emitting cells are spaced apart from one another by distances within a range of 10 to 30 D, and the serial array is operated while connected to an AC power source. Accordingly, the excellent operating characteristics and light output power can be secured in an AC light emitting diode with a limited size.
摘要翻译：本文公开了AC发光二极管。发光二极管包括二维布置在单个基板上的多个发光单元。导线将发光单元彼此电连接从而形成发光单元的串联阵列。此外，发光单元彼此隔开距离在10至30D的范围内，串联阵列在连接到交流电源时工作。因此，可以在具有有限尺寸的AC发光二极管中确保优异的操作特性和光输出功率。

10. 发明申请

US20100102336A1 LIGHT EMITTING DIODE FOR AC OPERATION 有权
标题翻译：用于交流操作的发光二极管
公开(公告)号：US20100102336A1
公开(公告)日：2010-04-29
申请号：US12607506
申请日：2009-10-28
申请人： Chung-Hoon Lee , Dae Won Kim , Dae Sung Kal , Won Cheol Seo , Kyung Hee Ye , Yeo Jin Yoon
发明人： Chung-Hoon Lee , Dae Won Kim , Dae Sung Kal , Won Cheol Seo , Kyung Hee Ye , Yeo Jin Yoon
IPC分类号： H01L33/00
CPC分类号： H01L27/153 , H01L33/20 , H01L33/62 , H01L2224/48 , H05B33/0821
摘要： The present invention discloses a light emitting diode (LED) including a plurality of light emitting cells arranged on a substrate. The LED includes half-wave light emitting units each including at least one light emitting cell, each half-wave light emitting unit including first and second terminals respectively arranged at both ends thereof; and full-wave light emitting units each including at least one light emitting cell, each full-wave light emitting units including third and fourth terminals respectively formed at both ends thereof. The third terminal of each full-wave light emitting unit is electrically connected to the second terminals of two half-wave light emitting units, and the fourth terminal of each full-wave light emitting unit is electrically connected to the first terminals of other two half-wave light emitting units. Also, a first half-wave light emitting unit is connected in series between the third terminal of a first full-wave light emitting unit and the fourth terminal of a second full-wave light emitting units, and a second half-wave light emitting units is connected in series between the fourth terminal of the first full-wave light emitting unit and the third terminal of the second full-wave light emitting unit.
摘要翻译：本发明公开了一种发光二极管（LED），其包括布置在基板上的多个发光单元。 LED包括每个包括至少一个发光单元的半波发光单元，每个半波发光单元包括分别布置在其两端的第一和第二端子; 和全波发光单元，每个包括至少一个发光单元，每个全波发光单元包括分别在其两端形成的第三和第四端子。每个全波发光单元的第三端子电连接到两个半波发光单元的第二端子，并且每个全波发光单元的第四端子电连接到另外两个半波发光单元的第一端子波发光单元。此外，第一半波发光单元串联连接在第一全波发光单元的第三端子和第二全波发光单元的第四端子之间，并且第二半波发光单元串联连接在第一全波发光单元的第四端子和第二全波发光单元的第三端子之间。

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