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1. 发明授权

US08652274B2 Copper alloy with high strength and high conductibility, and method for manufacturing same 有权
标题翻译：具有高强度，高导电性的铜合金及其制造方法
公开(公告)号：US08652274B2
公开(公告)日：2014-02-18
申请号：US13580954
申请日：2010-12-07
申请人： Dae Hyun Kim , Dong Woo Lee , In Dal Kim , Sang Young Choi , Ji Hoon Lee , Bo Min Jeon
发明人： Dae Hyun Kim , Dong Woo Lee , In Dal Kim , Sang Young Choi , Ji Hoon Lee , Bo Min Jeon
IPC分类号： C22C9/02 , C22F1/08
CPC分类号： C22C9/00 , C22C1/02 , C22F1/08
摘要： A copper alloy includes Si to facilitate deoxidation, and can be easily manufactured even when including elements such as Cr or Sn. The copper alloy has high conductivity and high workability without negatively affecting the tensile strength. The copper alloy contains 0.2 to 0.4 wt % of Cr, 0.05 to 0.15 wt % of Sn, 0.05 to 0.15 wt % of Zn, 0.01 to 0.30 wt % of Mg, 0.03 to 0.07 wt % of Si, with the remainder being Cu and inevitable impurities. A method for manufacturing the copper alloy includes obtaining a molten metal having the described composition; obtaining an ingot; heating the ingot at a temperature of 900-1000° C. to perform a hot rolling process; cold rolling; performing a first aging process at a temperature of 400-500° C. for 2 to 8 hours; cold rolling; and performing a second aging process at a temperature of 370-450° C. for 2 to 8 hours.
摘要翻译：铜合金包括Si以促进脱氧，并且即使当包括诸如Cr或Sn的元素时也可以容易地制造。铜合金具有高导电性和高加工性，而不会对拉伸强度产生不利影响。铜合金含有0.2〜0.4重量％的Cr，0.05〜0.15重量％的Sn，0.05〜0.15重量％的Zn，0.01〜0.30重量％的Mg，0.03〜0.07重量％的Si，余量为Cu，不可避免的杂质。制造铜合金的方法包括获得具有所述组成的熔融金属; 获得锭; 在900-1000℃的温度下加热锭以进行热轧过程; 冷轧在400-500℃的温度下进行第一次老化处理2至8小时; 冷轧并在370-450℃的温度下进行2至8小时的第二时效处理。

2. 发明申请

US20120312431A1 COPPER ALLOY WITH HIGH STRENGTH AND HIGH CONDUCTIBILITY, AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：具有高强度和高导体性的铜合金及其制造方法
公开(公告)号：US20120312431A1
公开(公告)日：2012-12-13
申请号：US13580954
申请日：2010-12-07
申请人： Dae Hyun Kim , Dong Woo Lee , In Dal Kim , Sang Young Choi , Ji Hoon Lee , Bo Min Jeon
发明人： Dae Hyun Kim , Dong Woo Lee , In Dal Kim , Sang Young Choi , Ji Hoon Lee , Bo Min Jeon
IPC分类号： C22F1/08 , C22C9/00 , C22C9/05 , C22C9/02 , C22C9/04
CPC分类号： C22C9/00 , C22C1/02 , C22F1/08
摘要： A copper alloy includes Si to facilitate deoxidation, and can be easily manufactured even when including elements such as Cr or Sn. The copper alloy has high conductivity and high workability without negatively affecting the tensile strength. The copper alloy consists of 0.2 to 0.4 wt % of Cr, 0.05 to 0.15 wt % of Sn, 0.05 to 0.15 wt % of Zn, 0.01 to 0.30 wt % of Mg, 0.03 to 0.07 wt % of Si, with the remainder being Cu and inevitable impurities. A method for manufacturing the copper alloy includes obtaining a molten metal having the described composition; obtaining an ingot; heating the ingot at a temperature of 900-1000° C. to perform a hot rolling process; cold rolling; performing a first aging process at a temperature of 400-500° C. for 2 to 8 hours; cold rolling; and performing a second aging process at a temperature of 370-450° C. for 2 to 8 hours.
摘要翻译：铜合金包括Si以促进脱氧，并且即使当包括诸如Cr或Sn的元素时也可以容易地制造。铜合金具有高导电性和高加工性，而不会对拉伸强度产生不利影响。铜合金由0.2-0.4重量％的Cr，0.05〜0.15重量％的Sn，0.05〜0.15重量％的Zn，0.01〜0.30重量％的Mg，0.03〜0.07重量％的Si组成，余量为Cu 和不可避免的杂质。制造铜合金的方法包括获得具有所述组成的熔融金属; 获得锭子在900-1000℃的温度下加热锭以进行热轧过程; 冷轧在400-500℃的温度下进行第一次老化处理2至8小时; 冷轧并在370-450℃的温度下进行2至8小时的第二时效处理。

3. 发明申请

US20120240726A1 PRODUCTION METHOD FOR HIGH PURITY COPPER POWDER USING A THERMAL PLASMA 有权
标题翻译：使用热等离子体的高纯度铜粉的生产方法
公开(公告)号：US20120240726A1
公开(公告)日：2012-09-27
申请号：US13513712
申请日：2010-07-20
申请人： Dae Hyun Kim , Dong Woo Lee , In Dal Kim , Sang Young Choi , Ji Hoon Lee , Bo Min Jeon
发明人： Dae Hyun Kim , Dong Woo Lee , In Dal Kim , Sang Young Choi , Ji Hoon Lee , Bo Min Jeon
IPC分类号： B22F1/00
CPC分类号： B22F9/12 , B22F1/0048 , B22F2998/10 , B22F2999/00 , C23C14/3414 , B22F9/04 , B22F2202/13
摘要： The present invention relates to a method of manufacturing a high purity copper (Cu) powder material useable in fabricating a sputtering target material for electronic industrial applications, for example a penetrator liner. The foregoing method has a configuration of using an apparatus composed of a raw material feeder, a plasma torch and a reactor to prepare a metal powder, and includes steps of passing a Cu powder having an average particle diameter of 30 to 450 μm through the thermal plasma torch at an introduction rate of 2 to 30 kg/hr. to thereby fabricate a Cu powder having an average particle diameter of 5 to 300 μm.
摘要翻译：本发明涉及制造用于制造用于电子工业应用的溅射靶材料的高纯度铜（Cu）粉末材料的方法，例如穿透衬套。上述方法具有使用由原料供给器，等离子体焰炬和反应器构成的装置来制备金属粉末的结构，并且包括使平均粒径为30〜450μm的Cu粉末通过热等离子体焰炬，导入速率为2〜30 kg / hr。从而制造平均粒径为5〜300μm的Cu粉末。

4. 发明授权

US09061353B2 Production method for high purity copper powder using a thermal plasma 有权
标题翻译：使用热等离子体制备高纯度铜粉的方法
公开(公告)号：US09061353B2
公开(公告)日：2015-06-23
申请号：US13513712
申请日：2010-07-20
申请人： Dae Hyun Kim , Dong Woo Lee , In Dal Kim , Sang Young Choi , Ji Hoon Lee , Bo Min Jeon
发明人： Dae Hyun Kim , Dong Woo Lee , In Dal Kim , Sang Young Choi , Ji Hoon Lee , Bo Min Jeon
IPC分类号： B22F9/14 , B22F9/12 , B22F1/00 , C23C14/34
CPC分类号： B22F9/12 , B22F1/0048 , B22F2998/10 , B22F2999/00 , C23C14/3414 , B22F9/04 , B22F2202/13
摘要： The present invention relates to a method of manufacturing a high purity copper (Cu) powder material useable in fabricating a sputtering target material for electronic industrial applications, for example a penetrator liner. The foregoing method has a configuration of using an apparatus composed of a raw material feeder, a plasma torch and a reactor to prepare a metal powder, and includes steps of passing a Cu powder having an average particle diameter of 30 to 450 μm through the thermal plasma torch at an introduction rate of 2 to 30 kg/hr, to thereby fabricate a Cu powder having an average particle diameter of 5 to 300 μm.
摘要翻译：本发明涉及制造用于制造用于电子工业应用的溅射靶材料的高纯度铜（Cu）粉末材料的方法，例如穿透衬套。上述方法具有使用由原料供给器，等离子体焰炬和反应器构成的装置来制备金属粉末的结构，并且包括使平均粒径为30〜450μm的Cu粉末通过热等离子体焰炬，导入速度为2〜30kg / hr，由此制造平均粒径为5〜300μm的Cu粉末。

5. 发明申请

US20120312430A1 COPPER ALLOY HAVING HIGH STRENGTH AND HIGH CONDUCTIVITY, AND METHOD FOR PREPARING THE SAME 审中-公开
标题翻译：具有高强度和高电导率的铜合金及其制备方法
公开(公告)号：US20120312430A1
公开(公告)日：2012-12-13
申请号：US13577512
申请日：2010-10-28
申请人： Dae Hyun Kim , Dong Woo Lee , In Dal Kim , Sang Young Choi , Ji Hoon Lee , Bo Min Jeon
发明人： Dae Hyun Kim , Dong Woo Lee , In Dal Kim , Sang Young Choi , Ji Hoon Lee , Bo Min Jeon
IPC分类号： C22C9/00 , C22C9/01 , C22C9/04 , C22C9/06 , C22F1/08 , C22C9/02
CPC分类号： C22C9/00 , C22C9/10 , C22F1/08 , H01L23/49579 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a copper alloy having particular benefits for electronic parts and a method for making the same. The alloy having the composition of 0.05 wt % of Fe, 0.025˜0.15 wt % P, 0.01˜0.25 wt % Cr, 0.01˜0.15 wt %, Si 0.01˜0.25 wt % Mg, and the balance of Cu and minor impurities. The method of making the copper alloy includes: forming the molten alloy, casting to obtain an ingot, hot rolling the ingot at 850˜1,000° C., cooling, cold rolling the hot rolled product (after cooling the same), annealing the cold rolled product at 400˜600° C. for 1˜10 hours, intermediate rolling the annealed product with a reduction ratio of 30˜70%, heat treating the intermediate rolled product at 500˜800° C. for 30˜600 seconds, and finishing rolling the heat treated product with a reduction ratio of 20˜40%.
摘要翻译：本发明涉及对电子部件具有特别益处的铜合金及其制造方法。合金的组成为Fe的0.05重量％，P：0.025〜0.15重量％，Cr：0.01〜0.25重量％，0.01〜0.15重量％，Si：0.01〜0.25重量％的Mg，余量的Cu和微量的杂质。制造铜合金的方法包括：形成熔融合金，铸造以获得锭，在850〜1000℃下热轧锭，冷却，冷轧热轧产品（冷却后），退火冷轧制产品在400〜600℃下进行1〜10小时，对退火产物进行中间轧制，减压比为30〜70％，在500〜800℃下热处理30〜600秒，以20〜40％的压下率对热处理产品进行精轧。

6. 发明授权

US5846346A High strength high conductivity Cu-alloy of precipitate growth suppression type and production process 失效
标题翻译：高强度高导电铜合金沉淀生长抑制型及生产工艺
公开(公告)号：US5846346A
公开(公告)日：1998-12-08
申请号：US756358
申请日：1996-11-26
申请人： Dong Woo Lee , In Dal Kim
发明人： Dong Woo Lee , In Dal Kim
IPC分类号： B21B3/00 , C22C9/06 , C22F1/08 , H01B1/02 , C22C9/02
CPC分类号： H01B1/026 , C22C9/06 , B21B2003/005
摘要： This invention relates to a high strength, high electrical conductivity copper alloy having excellent mechanical and physical properties, including thermal softening resistance, in which precipitate particles are finely dispersed (growth of the precipitate is suppressed), and the production process. The alloy is the precipitation suppressed copper alloy consisted of 0.5.about.4.0 wt % nickel, 0.1.about.1.0 wt % silicon, 0.05.about.0.8 wt % tin (Sn) and balance copper and inevitable impurities, wherein sizes of precipitate particles are below 0.5 .mu.m. The production process includes the steps of melting and casting raw materials, surface machining and cold rolling of the ingot, subjecting the cold rolled ingot to a precipitation process at a temperature ranging 450.about.520 deg. C. for 5.about.12 hours, cold rolling the precipitation processed material, and subjecting the cold rolled material to a tension annealing process at a temperature ranging 350.about.550 deg. C. for below 90 seconds.
摘要翻译：本发明涉及一种高精度，高导电性的铜合金，其具有优异的机械和物理性能，包括热稳定性，其中沉淀颗粒细分散（沉淀物的生长被抑制））和制备方法。该合金是沉淀抑制铜合金，由0.5％的差异为4.0％的镍，0.1％的1.0％的硅，0.05％的0.8wt％的锡（Sn）和余量的铜和不可避免的杂质组成，其中沉淀颗粒的尺寸低于0.5μm 。生产过程包括熔炼和铸造原料的步骤，锭的表面加工和冷轧，在450°F的温度下对冷轧锭进行沉淀过程。 C.对于5差12小时，冷沉淀处理的材料，并在350分贝550度的温度下对冷轧材料进行拉伸退火处理。 C.低于90秒。

7. 发明授权

US08673622B2 Cell chip and method for manufacturing the same 失效
标题翻译：电池芯片及其制造方法
公开(公告)号：US08673622B2
公开(公告)日：2014-03-18
申请号：US13482316
申请日：2012-05-29
申请人： Dong Woo Lee , Sang Hyun Yi , Bo Sung Ku
发明人： Dong Woo Lee , Sang Hyun Yi , Bo Sung Ku
IPC分类号： C12M1/00 , C12Q1/68 , G01N33/567 , G01N33/48 , C40B40/00 , C40B40/02 , C40B50/06
CPC分类号： C40B60/12 , B01J2219/00509 , B01J2219/00743
摘要： Disclosed herein are a cell chip and a method for manufacturing the same. The cell chip may include: a substrate; and a first contact member disposed on the substrate, wherein a top end of the first contact member is provided with a first inclined contact surface inclined with respect to the substrate.
摘要翻译：本文公开了一种电池芯片及其制造方法。电池芯片可以包括：基板; 以及设置在所述基板上的第一接触构件，其中，所述第一接触构件的顶端设置有相对于所述基板倾斜的第一倾斜接触面。

8. 发明申请

US20130153943A1 LED LIGHT SOURCE STRUCTURE WITH HIGH ILLUMINATING POWER AND IMPROVED HEAT DISSIPATING CHARACTERISTICS 审中-公开
标题翻译：具有高照明功率的LED光源结构和改进的散热特性
公开(公告)号：US20130153943A1
公开(公告)日：2013-06-20
申请号：US13819395
申请日：2011-09-14
申请人： Dong Woo Lee
发明人： Dong Woo Lee
IPC分类号： H01L33/64
CPC分类号： H01L33/64 , F21K9/00 , F21V29/70 , F21Y2103/10 , F21Y2115/10 , H01L33/647 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： The present invention relates to an LED light source structure, and more particularly, to an LED light source structure with high illuminating power and improved heat dissipating performance, in which metal having superior electric conductivity and thermal conductivity is processed into positive electrode units, and heat generated from an LED chip is directly dissipated through the electrode unit which is used as a positive electrode from among the positive electrode units, thereby improving heat dissipating characteristics, stabilizing a light source and preventing voltage drop, thus enabling output of high illuminating power.
摘要翻译： LED光源结构技术领域本发明涉及LED光源结构，更具体地说，涉及具有高照明功率和改善的散热性能的LED光源结构，其中具有优良的导电性和导热性的金属被加工成正极单元，并且热量通过从正极单元中用作正极的电极单元直接耗散LED芯片，从而提高散热特性，稳定光源并防止电压降，从而能够输出高照明功率。

9. 发明授权

US08467711B2 Image forming apparatus including lateral slip prevention member 有权
标题翻译：图像形成装置包括侧向防滑构件
公开(公告)号：US08467711B2
公开(公告)日：2013-06-18
申请号：US12474288
申请日：2009-05-29
申请人： Dong Woo Lee
发明人： Dong Woo Lee
IPC分类号： G03G15/20 , G03G15/00 , B65G39/16
CPC分类号： G03G15/2053 , G03G2215/2025
摘要： An image forming apparatus, a fixing unit and a belt assembly thereof are disclosed. The image forming apparatus, the fixing unit and the belt assembly includes a frame, a belt rotatably disposed at an outer periphery of the frame, and a lateral slip prevention member which presses at least a portion of the belt to cause the belt to move in a direction of mitigating undesirable lateral movement of the belt.
摘要翻译：公开了一种图像形成装置，定影单元及其带组件。图像形成装置，定影单元和带组件包括框架，可旋转地设置在框架的外周的带，以及侧向防滑构件，其压入带的至少一部分以使带移动减轻皮带不良侧向运动的方向。

10. 发明授权

US08144087B2 Color LED driver 有权
标题翻译：彩色LED驱动
公开(公告)号：US08144087B2
公开(公告)日：2012-03-27
申请号：US12891272
申请日：2010-09-27
申请人： Dong Woo Lee
发明人： Dong Woo Lee
IPC分类号： G09G3/32
CPC分类号： H05B33/0857 , G09G3/3413 , H05B33/0809
摘要： Disclosed herein is a color LED driver, which is capable of being implemented by a compact structure without a feedback structure and accompanying a small size and low cost, by directly connecting a negative temperature coefficient (NTC) thermistor to a driving current path of a color LED applied to an LCD backlight to compensate a characteristic variation of the LED due to a variation in a temperature. The color LED driver includes a driving constant voltage source 100 which supplies a predetermined driving constant voltage VD; a driving circuit 200 which converts the driving constant voltage VD of the driving constant voltage source 100 into a plurality of driving currents, for driving color LEDs, the plurality of driving currents including red LED driving current Ird, green LED driving current Igd and blue LED driving current Ibd; a temperature compensation unit 300 which compensates variations in the red LED driving current Ird and the green LED driving current Igd due to a variation in a temperature, among the plurality of driving currents from the driving circuit 200; and an LED unit 400 including a plurality of color LEDs which are turned on by the driving currents from the temperature compensation circuit 300 and the driving current from the driving circuit 200.
摘要翻译：这里公开了一种彩色LED驱动器，其能够通过将负温度系数（NTC）热敏电阻直接连接到颜色的驱动电流路径而通过紧凑的结构实现而没有反馈结构并且伴随着小尺寸和低成本 LED应用于LCD背光以补偿由于温度变化引起的LED的特性变化。彩色LED驱动器包括提供预定的驱动恒定电压VD的驱动恒压源100; 驱动电路200，其将驱动恒压源100的驱动恒定电压VD转换为驱动彩色LED的多个驱动电流，多个驱动电流包括红色LED驱动电流Ird，绿色LED驱动电流Igd和蓝色LED 驱动电流Ibd; 温度补偿单元300，其补偿来自驱动电路200的多个驱动电流中的红色LED驱动电流Ird和由于温度变化引起的绿色LED驱动电流Igd的变化; 以及LED单元400，其包括通过来自温度补偿电路300的驱动电流和来自驱动电路200的驱动电流而导通的多个彩色LED。

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