会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 8. 发明授权
    • Partition including buffering pad disposed on frame for pouch type secondary battery
    • 分隔包括缓冲垫布置在袋式二次电池的框架上
    • US09530997B2
    • 2016-12-27
    • US14118630
    • 2012-05-30
    • Young Ki KimWon Jun LeeSeung Bum Kim
    • Young Ki KimWon Jun LeeSeung Bum Kim
    • H01M2/10H01M2/18H01M6/46H01M2/02H01M2/20H01M2/34
    • H01M2/18H01M2/0275H01M2/1061H01M2/204H01M2/347
    • A pouch type secondary battery includes a pouch having a receiving part receiving an electrolyte therein and a sealing part formed by sealing an outer circumference of the receiving part in order to seal the receiving part and an electrode tab connected to one side of the pouch so as to be protruded, and at least one partition provided between at least two pouch type secondary batteries. The partition comprises: an electrode tab supporting part supporting the electrode tab; a frame extended from the electrode tab supporting part, supporting the sealing part, and having the receiving part inserted thereinto; and a buffering pad attached to an inner side of the frame at which the receiving part is seated so as to be disposed between the frame and the receiving part. The buffering pad has a cross-sectional shape in which one side of a rectangular frame is opened.
    • 袋型二次电池包括具有接收电解质的容纳部分的袋和通过密封接收部的外周而形成的密封部,以便密封接收部和连接到袋的一侧的电极片,以便 和至少两个袋式二次电池之间设置的至少一个隔板。 隔板包括:支撑电极片的电极片支撑部分; 从所述电极片支撑部延伸的框架,支撑所述密封部,并且将所述接收部插入其中; 以及缓冲垫,其附接到所述框架的内侧,在所述框架的内侧,所述接收部分被安置在所述框架的内侧,以便布置在所述框架和所述接收部件之间。 缓冲垫具有矩形框架的一侧打开的横截面形状。
    • 9. 发明授权
    • Semiconductor device and method of fabricating the same
    • 半导体装置及其制造方法
    • US08741734B2
    • 2014-06-03
    • US12649605
    • 2009-12-30
    • Seung Bum Kim
    • Seung Bum Kim
    • H01L21/76
    • H01L27/10894H01L21/76229H01L27/0207H01L27/10855
    • A semiconductor device includes a semiconductor substrate having a trench defining an active region. A wall oxide is formed on side walls of the active region extending in the longitudinal direction, and an element isolation layer is formed in the trenches. A method of manufacturing a semiconductor device includes forming line-shape first trenches on a semiconductor substrate so as to define an active region; forming a wall oxide on surfaces of the first trenches; forming a second trench which separates the active region into a plurality of active regions; and filling the trenches with an element isolation layer.
    • 半导体器件包括具有限定有源区的沟槽的半导体衬底。 在沿纵向方向延伸的有源区的侧壁上形成壁氧化物,并且在沟槽中形成元件隔离层。 一种制造半导体器件的方法包括:在半导体衬底上形成线状的第一沟槽,以限定有源区; 在所述第一沟槽的表面上形成壁氧化物; 形成将所述有源区域分成多个有源区域的第二沟槽; 并用元件隔离层填充沟槽。