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1. 发明申请

WO0199146A3 PROCESS FOR MANUFACTURING ELECTRON FIELD EMITTERS 审中-公开
标题翻译：制造电子场发射的方法
公开(公告)号：WO0199146A3
公开(公告)日：2003-08-21
申请号：PCT/US0119580
申请日：2001-06-19
申请人： DU PONT , BOUCHARD ROBERT JOSEPH , CHENG LAP-TAK ANDREW , LAVIN JOHN GERARD , ROACH DAVID HERBERT
发明人： BOUCHARD ROBERT JOSEPH , CHENG LAP-TAK ANDREW , LAVIN JOHN GERARD , ROACH DAVID HERBERT
IPC分类号： H01J1/00 , H01J1/02 , H01J1/14 , H01J1/304 , H01J9/02 , H01J19/24 , H01J21/10 , H01J63/06
CPC分类号： B82Y10/00 , H01J1/3048 , H01J9/025 , H01J2201/30469 , H01J2329/00
摘要： This invention provides a process for manufacturing an electron field emitter comprised of an acicular emitting substance such as acicular carbon, an acicular semiconductor, an acicular metal or a mixture thereof, comprising applying a force to the surface of the electron field emitter wherein the force results in the removal of a portion of the electron field emitter thereby forming a new surface of the electron field emitter.
摘要翻译：本发明提供了一种用于制造由诸如针状碳，针状半导体，针状金属或其混合物的针状发射物质构成的电子场发射体的方法，包括向电场发射体的表面施加力，其中力结果在去除电子场发射体的一部分，从而形成电子场发射体的新表面。

2. 发明授权

US3859232A Semiconducting metal oxides with the cubic ksbo' 3 'crystal structure 失效
标题翻译：具有CUBIC KSBO'3'结晶结构的金属氧化物半导体
公开(公告)号：US3859232A
公开(公告)日：1975-01-07
申请号：US31626772
申请日：1972-12-18
申请人： BOUCHARD ROBERT JOSEPH , SLEIGHT ARTHUR WILLIAM
发明人： BOUCHARD ROBERT JOSEPH , SLEIGHT ARTHUR WILLIAM
IPC分类号： H01B1/08 , H01B3/10
CPC分类号： H01B1/08
摘要： Oxides with the cubic KSbO3 crystal structure of the type Bi3GaSb2O11 are semi-conducting materials.

3. 发明专利

JP2011187452A Paste for manufacturing electron field emitter and usage therefor 审中-公开
标题翻译：用于制造电子场发射器及其用途
公开(公告)号：JP2011187452A
公开(公告)日：2011-09-22
申请号：JP2011111592
申请日：2011-05-18
申请人： E I Du Pont De Nemours & Co , イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニーE.I.Du Pont De Nemours And Company
发明人： BOUCHARD ROBERT JOSEPH , CHENG LAP-TAK ANDREW , LAVIN JOHN GERARD , ROACH DAVID HERBERT
IPC分类号： H01J9/02 , H01J1/00 , H01J1/02 , H01J1/14 , H01J1/304 , H01J19/24 , H01J21/10 , H01J63/06
CPC分类号： B82Y10/00 , H01J1/3048 , H01J9/025 , H01J2201/30469 , H01J2329/00
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a cathode assembly including a process of forming an electron field emitter by printing paste, with the use of the screen printable paste configured of carbon nanotubes. SOLUTION: The method for manufacturing the cathode assembly including the electron field emitter is provided by forming an electron field emitter by using the paste which contains carbon nanotubes as a solid content and can perform screen printing, wherein the carbon nanotubes in the paste used for forming the electron field emitter is less than 9 wt.% to total weight of the solid content. Or, the method may include processes of: making the electron field emitter in contact with a material; removing a part of the electron field emitter by peeling off the material or realigning the electron field emitter; and forming a new surface of the electron field emitter. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造阴极组件的方法，包括通过印刷浆料形成电子发射体的工艺，使用由碳纳米管构成的丝网印刷浆料。解决方案：制造包括电子场发射体的阴极组件的方法是通过使用包含碳纳米管作为固体含量并可进行丝网印刷的糊料形成电子场发射器来提供的，其中糊料中的碳纳米管用于形成电子场发射体的固体成分的总重量小于9重量％。或者，该方法可以包括以下过程：使电子场发射体与材料接触; 通过剥离材料或重新排列电子场发射器去除电子场发射器的一部分; 并形成电子场发射体的新表面。版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2011175979A Paste for electron field emitter manufacturing, and use thereof 审中-公开
标题翻译：用于电子场发射器制造及其应用
公开(公告)号：JP2011175979A
公开(公告)日：2011-09-08
申请号：JP2011111593
申请日：2011-05-18
申请人： E I Du Pont De Nemours & Co , イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニーE.I.Du Pont De Nemours And Company
发明人： BOUCHARD ROBERT JOSEPH , CHENG LAP-TAK ANDREW , LAVIN JOHN GERARD , ROACH DAVID HERBERT
IPC分类号： H01J9/02 , C01B31/02 , H01J1/00 , H01J1/02 , H01J1/14 , H01J1/304 , H01J9/44 , H01J19/24 , H01J21/10 , H01J63/06
CPC分类号： B82Y10/00 , H01J1/3048 , H01J9/025 , H01J2201/30469 , H01J2329/00
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of an electron field emitter, in which a paste to contain less than 9 wt.% of carbon nanotubes against the total weight of solid content is used to form the electron field emitter, and a material and the electron field emitter are brought into contact with each other and thereafter the material is exfoliated to form a new surface of the electron field emitter. SOLUTION: In the manufacturing method of the electron field emitter composed of the carbon nanotube, the paste containing less than 9 wt.%, preferably 0.01 to 2 wt.% of carbon nanotubes against the total weight of the solid content, or paste containing 0.01 to 6.0 wt.% of carbon nanotubes, 40 to 75 wt.% of silver particulates, and 3 to 15 wt.% of glass frit, is used to form the electron field emitter. The material is brought into close contact with the electron field emitter, and after that, the material is exfoliated to form the new surface of the electron field emitter after a portion of the electron field emitter is removed, or the electron field emitter is realigned. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种电子发射体的制造方法，其中使用含有小于9重量％的碳纳米管相对于固体含量的总重量的糊料来形成电子场发射体，并且使材料和电子场发射体彼此接触，然后将材料剥离以形成电子场发射体的新表面。解决方案：在由碳纳米管组成的电子发射体的制造方法中，相对于固体含量的总重量，含有小于9重量％，优选0.01至2重量％的碳纳米管的糊剂，或使用含有0.01〜6.0重量％的碳纳米管，40〜75重量％的银颗粒和3〜15重量％的玻璃料的糊剂形成电子场发射体。该材料与电子场发射体紧密接触，之后，在除去电子场发射体的一部分之后，将该材料剥离以形成电子场发射体的新表面，或者将电子场发射体重新对准。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2011071124A Paste for electron field emitter manufacture, and its usage 审中-公开
标题翻译：用于电子场发射器制造及其使用
公开(公告)号：JP2011071124A
公开(公告)日：2011-04-07
申请号：JP2010251592
申请日：2010-11-10
申请人： E I Du Pont De Nemours & Co , イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニーE.I.Du Pont De Nemours And Company
发明人： BOUCHARD ROBERT JOSEPH , CHENG LAP-TAK ANDREW , LAVIN JOHN GERARD , ROACH DAVID HERBERT
IPC分类号： H01J9/02 , H01J1/00 , H01J1/02 , H01J1/14 , H01J1/304 , H01J19/24 , H01J21/10 , H01J63/06
CPC分类号： B82Y10/00 , H01J1/3048 , H01J9/025 , H01J2201/30469 , H01J2329/00
摘要： PROBLEM TO BE SOLVED: To eliminate a problem that there is a limit of precision and resolution that can be attained by a complete screen printing when a triode of less than 100 μm of dimension is manufactured, and solve a problem such as prevention of electric short circuit and deterioration of accuracy of positioning of different screens at the time of multilayer formation. SOLUTION: A gate triode has a physical gate electrode between a cathode and an anode of a field emitter, and an inversion gate triode has a physical field emitter cathode between a gate and the anode. A thick film composition of light image forming type such as Fodel (R) silver in which, in addition to silver or dielectric, a small amount of low-melting point glass frit is contained in an organic medium containing a light image forming type component such as a photo-polymerization initiator and an optical monomer in a form of particulate, and a dielectric paste composition (respectively, DC 206 and DG201 etc.) is screen-printed on a substrate adjusting the thickness of a uniform layer, and a contact type photomask including a desired pattern is arranged mutually in contact with the film and is exposed to ultraviolet (UV) rays. Then, this film is developed in a weak sodium carbonate aqueous solution, and by a thick film method of a light image forming type in which a light image forming treatment is applied on the thick film with screen printing, a small feature dimension of 10 μm is attained. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了消除在制造尺寸小于100μm的三极管时通过全面丝网印刷可以获得的精度和分辨率的限制的问题，并且解决诸如预防的问题的电气短路和多层形成时不同筛网的定位精度的劣化。解决方案：栅极三极管在场发射极的阴极和阳极之间具有物理栅电极，反向栅极三极管在栅极和阳极之间具有物理场发射极阴极。一种厚膜组合物，其中除了银或电介质以外，少量的低熔点玻璃料也包含在含有光成像型成分的有机介质中，例如Fodel银，作为光聚合引发剂和颗粒形式的光学单体，并且电介质浆料组合物（分别为DC 206和DG201等）丝网印刷在调整均匀层的厚度的基材上，并且接触型包括期望图案的光掩模被布置成与膜接触并且暴露于紫外线（UV）射线。然后，将该膜显影在弱碳酸钠水溶液中，通过使用丝网印刷在厚膜上进行光图像形成处理的光图像形成类型的厚膜法，具有10μm的小特征尺寸达到了版权所有（C）2011，JPO＆INPIT

6. 发明专利

JP2008027919A Paste for manufacturing electron electric field emitter and usage thereof 有权
标题翻译：用于制造电子电场发射器及其用途
公开(公告)号：JP2008027919A
公开(公告)日：2008-02-07
申请号：JP2007204514
申请日：2007-08-06
申请人： E I Du Pont De Nemours & Co , イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニーE.I.Du Pont De Nemours And Company
发明人： BOUCHARD ROBERT JOSEPH , CHENG LAP-TAK ANDREW , LAVIN JOHN GERARD , ROACH DAVID HERBERT
IPC分类号： H01J9/02 , C01B31/02 , H01B1/24 , H01J1/00 , H01J1/02 , H01J1/14 , H01J1/304 , H01J19/24 , H01J21/10 , H01J63/06
CPC分类号： B82Y10/00 , H01J1/3048 , H01J9/025 , H01J2201/30469 , H01J2329/00
摘要： PROBLEM TO BE SOLVED: To provide paste for manufacturing an electron electric field emitter capable of screen printing containing carbon nanotube. SOLUTION: Paste contains less than 9 wt.%, preferably 0.01 to 2 wt.% carbon nanotube to the total weight of solid content, or paste contains carbon nanotube having 0.01 to 6.0 wt.%, a silver fine particle having 40 to 75 wt.%, and glass frit having 3 to 15 wt.%. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供能够制造含有碳纳米管的丝网印刷的电子电场发射体的糊料。解决方案：糊料含有少于9重量％，优选0.01至2重量％的碳纳米管与固体含量的总重量，或者糊包含具有0.01至6.0重量％的碳纳米管，具有40 至75重量％，玻璃料为3〜15重量％。版权所有（C）2008，JPO＆INPIT

7. 发明专利

JP2011100737A Paste for manufacturing electron field emitter, and usage thereof 审中-公开
标题翻译：用于制造电子场发射器及其应用
公开(公告)号：JP2011100737A
公开(公告)日：2011-05-19
申请号：JP2010251591
申请日：2010-11-10
申请人： E I Du Pont De Nemours & Co , イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニーE.I.Du Pont De Nemours And Company
发明人： BOUCHARD ROBERT JOSEPH , CHENG LAP-TAK ANDREW , LAVIN JOHN GERARD , ROACH DAVID HERBERT
IPC分类号： H01J9/02 , H01J1/00 , H01J1/02 , H01J1/14 , H01J1/304 , H01J19/24 , H01J21/10 , H01J63/06
CPC分类号： B82Y10/00 , H01J1/3048 , H01J9/025 , H01J2201/30469 , H01J2329/00
摘要： PROBLEM TO BE SOLVED: To restrain a hot spot of emission to the minimum as a big defect inevitably accompanying an electron field emitter formation method necessary for using "assembly of random emitters" such as usage of an emitter paste containing acicular carbons such as nanotubes. SOLUTION: In a method for reducing the hot spot of emission on an electron field emitter while maintaining anode voltage above a normal operation anode voltage level, oxygen is used as a reactive gas, and the electron field emitter is exposed to the oxygen. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了将发射热点限制为不可避免地伴随使用“组装随机发射体”所必需的电子场发射体形成方法的大的缺陷，例如使用含有针状碳的发射体糊状物作为纳米管。解决方案：在将阳极电压保持在正常工作阳极电压水平以上的方式中，减少电子发射体上的发热热点的方法，使用氧气作为反应气体，电子场发射体暴露于氧气。版权所有（C）2011，JPO＆INPIT

8. 发明授权

US3896055A Pyrochlore-related oxides containing copper and/or silver and resistor compositions thereof 失效
标题翻译：含有铜和/或银的氧化铁相关氧化物及其电阻组合物
公开(公告)号：US3896055A
公开(公告)日：1975-07-22
申请号：US32695573
申请日：1973-01-26
申请人： DU PONT
发明人： BOUCHARD ROBERT JOSEPH , ROGERS DONALD BURL
IPC分类号： H01C7/00 , C01G29/00 , C01G55/00 , C04B35/00 , H01B1/08 , H01C17/065
CPC分类号： H01C17/0654 , C03C3/074 , C03C8/10 , C03C8/14 , C04B35/01 , C04B35/65 , C04B2235/3224 , C04B2235/3225 , C04B2235/3232 , C04B2235/3281 , C04B2235/3284 , C04B2235/3286 , C04B2235/3289 , C04B2235/3291 , C04B2235/3296 , C04B2235/3298 , C04B2235/36 , C04B2235/408 , C04B2235/76 , C04B2235/761 , C04B2235/81 , C04B2235/9661 , H01B1/08
摘要： Novel polynary oxides of pyrochlore-related crystal structure having Cu and/or Ag ions in the A-site. Powder compositions comprising such novel oxides and dielectric material plus optional components, useful for forming thick-film printed resistors on dielectric substrates; also resistors formed by firing such powder compositions.

9. 发明专利

DE2631035A1 未知
公开(公告)号：DE2631035A1
公开(公告)日：1977-01-20
申请号：DE2631035
申请日：1976-07-09
申请人： DU PONT
发明人： BOUCHARD ROBERT JOSEPH , BRIXNER LOTHAR HEINRICH
IPC分类号： H01G4/12 , C01G23/00 , C01G41/00 , C04B35/46 , C04B35/47 , H01B3/12 , H01B3/00

10. 发明专利

HK1059499A1 Process for increasing the field emission , emitter, triode, display device and light device 未知
公开(公告)号：HK1059499A1
公开(公告)日：2004-07-02
申请号：HK04102278
申请日：2004-03-29
申请人： DU PONT
发明人： BOUCHARD ROBERT JOSEPH , CHENG LAP-TAK ANDREW , LAVIN JOHN GERARD , ROACH DAVID HERBERT
IPC分类号： H01J20060101 , H01J1/00 , H01J1/02 , H01J1/14 , H01J1/304 , H01J9/02 , H01J19/24 , H01J21/10 , H01J63/06
摘要： This invention provides a process for improving the field emission of an electron field emitter comprised of an acicular emitting substance such as acicular carbon, an acicular semiconductor, an acicular metal or a mixture thereof, comprising applying a force to the surface of the electron field emitter wherein the force results in the removal of a portion of the electron field emitter thereby forming a new surface of the electron field emitter.

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