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1. 发明申请

WO2010134699A3 METHOD FOR MANUFACTURING A LIGHT-EMITTING DIODE UNIT, AND LIGHT-EMITTING DIODE UNIT MANUFACTURED BY THE METHOD 审中-公开
标题翻译：用于制造发光二极管单元的方法和由该方法制造的发光二极管单元
公开(公告)号：WO2010134699A3
公开(公告)日：2011-01-20
申请号：PCT/KR2010002327
申请日：2010-04-15
申请人： DOOSUNG ADVANCED TECHNOLOGY CO LTD , JANG JONG JIN
发明人： JANG JONG JIN
IPC分类号： H01L33/48 , H01L33/58 , H01L33/64
CPC分类号： H01L33/60 , H01L33/486 , H01L2224/48091 , H01L2224/49107 , H01L2924/00014
摘要： The present invention provides a method for manufacturing a light-emitting diode unit, comprising: a first process of preparing a lower substrate in which an upper thermally conductive film having superior thermal conductivity is formed at the center of the upper surface of a lower insulation substrate, a positive wiring pattern and a negative wiring pattern are formed at the upper surface of the lower insulation substrate such that the positive wiring pattern and the negative wiring pattern avoid contact with the upper thermally conductive film, and a lower thermally conductive film having superior thermal conductivity is formed at a lower surface of the lower insulation substrate; a second process of mounting a light-emitting diode chip on the upper thermally conductive film of the lower substrate; and a third process of electrically connecting an N-type pad and a P-type pad of the light-emitting diode chip to the positive wiring pattern and to the negative wiring pattern.
摘要翻译：本发明提供了一种制造发光二极管单元的方法，包括：制备下基板的第一工艺，其中在下绝缘基板的上表面的中心处形成具有优良导热性的上导热膜在下绝缘基板的上表面形成正的布线图案和负的布线图案，使得正布线图案和负布线图案避免与上导热膜接触，并且具有优异的热导率的下导热膜导电性形成在下绝缘基板的下表面处; 将发光二极管芯片安装在下基板的上导热膜上的第二工序; 以及将发光二极管芯片的N型焊盘和P型焊盘电连接到正极配线图案和负极配线图案的第三工序。

2. 发明申请

WO2011025290A3 HIGH QUALITY NON-POLAR/SEMI-POLAR SEMICONDUCTOR ELEMENT ON TILT SUBSTRATE AND FABRICATION METHOD THEREOF 审中-公开
标题翻译：高品质非极性半极半导体元件及其制造方法
公开(公告)号：WO2011025290A3
公开(公告)日：2011-06-30
申请号：PCT/KR2010005762
申请日：2010-08-27
申请人： SEOUL OPTO DEVICE CO LTD , KOREA POLYTECH UNIV IND ACAD , NAM OK HYUN , JANG JONG JIN
发明人： NAM OK HYUN , JANG JONG JIN
IPC分类号： H01L33/02
CPC分类号： H01L33/16 , H01L33/007 , H01L33/32
摘要： The present invention relates to a high quality non-polar/semi-polar semiconductor element and a fabrication method thereof, wherein a nitride semiconductor crystal is formed on a sapphire crystal plane that enables the growth of a non-polar/semi-polar nitride semiconductor layer to eliminate an piezoelectric effect; and a template layer is formed on a corresponding off-axis of the sapphire crystal plane tilted in a predetermined direction to reduce the defect density of the semiconductor element and improves the internal quantum efficiency and extraction efficiency. In the fabrication method of a semiconductor element by forming a template layer and a semiconductor element structure on the sapphire substrate having a crystal plane for the growth of a non-polar or semi-polar nitride semiconductor layer, the sapphire substrate is a substrate having the crystal plane tilted in a predetermined direction, and a nitride semiconductor layer and the template layer comprising a GaN layer are formed on the tilt substrate.
摘要翻译：本发明涉及一种高品质非极性/半极性半导体元件及其制造方法，其中氮化物半导体晶体形成在蓝宝石晶体平面上，其能够生长非极性/半极性氮化物半导体层消除压电效应; 并且在规定方向倾斜的蓝宝石晶面的对应偏轴上形成模板层，以降低半导体元件的缺陷密度，提高内部量子效率和提取效率。在通过在具有用于生长非极性或半极性氮化物半导体层的晶面的蓝宝石衬底上形成模板层和半导体元件结构的半导体元件的制造方法中，蓝宝石衬底是具有晶面在预定方向上倾斜，并且氮化物半导体层和包括GaN层的模板层形成在倾斜衬底上。

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