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1. 发明授权

KR100780248B1 DIODE AND METHOD FOR MANUFACTURING THEREOF 无效
标题翻译：二极管及其制造方法
公开(公告)号：KR100780248B1
公开(公告)日：2007-11-27
申请号：KR20060135756
申请日：2006-12-27
申请人： DONGBU ELECTRONICS CO LTD
发明人： LIM SU
IPC分类号： H01L29/93 , H01L21/265 , H01L21/28 , H01L21/76
CPC分类号： H01L29/93
摘要： A diode and a method for manufacturing the same are provided to form a semiconductor device having high capacitance by increasing the capacitance on the same area. A plurality of first conductive type wells(120,160,200) are formed vertically to a substrate(110). A plurality of second conductive type ion implantation regions(130,170,220) are formed on each of the first conductive type wells. One or more second conductive type plugs(150,210) are formed to connect electrically the second conductive type ion implantation regions with each other. An isolation layer(190) is formed at both sides of the highest ion implantation region of the second conductive type ion implantation regions. A first conductive type source/drain region(230) is formed on the highest well of the first conductive type wells which are separated from the highest ion implantation region of the second conductive type ion implantation regions by using an isolation layer.
摘要翻译：提供二极管及其制造方法以通过增加同一区域上的电容来形成具有高电容的半导体器件。多个第一导电类型孔（120,160,200）垂直于衬底（110）形成。在每个第一导电类型的孔上形成多个第二导电型离子注入区（130,170,220）。形成一个或多个第二导电型插头（150,210），以将第二导电型离子注入区域彼此电连接。隔离层（190）形成在第二导电型离子注入区域的最高离子注入区域的两侧。第一导电型源极/漏极区域（230）通过使用隔离层与第二导电型离子注入区域的最高离子注入区域分开形成在第一导电类型阱的最高阱上。

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