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1. 发明专利

GB2442311B Organic semiconductor device, manufacturing method of the same,organic transistor array, and display 未知
公开(公告)号：GB2442311B
公开(公告)日：2011-08-24
申请号：GB0717873
申请日：2007-09-13
申请人： DAINIPPON PRINTING CO LTD
发明人： HONDA HIROYUKI , KOBAYASHI HIRONORI , MATSUOKA MASANAO , NAGAE MITSUTAKA
IPC分类号： H01L51/00
摘要： The present invention mainly intends to provide an organic semiconductor device having an organic semiconductor transistor reduced in off current. In order to achieve the object, the present invention provides an organic semiconductor device comprising a substrate and an organic semiconductor transistor provided with a gate electrode formed on the substrate, a gate insulation layer formed on the gate electrode, source and drain electrodes which are porous bodies and are formed on the gate insulation layer and an organic semiconductor layer which is made of an organic semiconductor material and formed only between the source and drain electrodes.

2. 发明专利

GB2442311A Porous source/drain electrodes for OFETs 未知
公开(公告)号：GB2442311A
公开(公告)日：2008-04-02
申请号：GB0717873
申请日：2007-09-13
申请人： DAINIPPON PRINTING CO LTD
发明人： HONDA HIROYUKI , KOBAYASHI HIRONORI , MATSUOKA MASANAO , NAGAE MITSUTAKA
IPC分类号： H01L51/00
摘要： The organic material of the channel layer may be absorbed into the porous source/drain electrodes of the OFET device during device fabrication which allows the channel layer to be deposited easily only in the region between the source and drain electrodes. OFET devices with reduced off current can be formed.

3. 发明专利

JP2010262971A Organic semiconductor element and manufacturing method thereof 有权
标题翻译：有机半导体元件及其制造方法
公开(公告)号：JP2010262971A
公开(公告)日：2010-11-18
申请号：JP2009110585
申请日：2009-04-30
申请人： Dainippon Printing Co Ltd , 大日本印刷株式会社
发明人： SUZUKI TOMOMI , MATSUOKA MASANAO , KOBAYASHI HIRONORI
IPC分类号： H01L29/786 , H01L21/312 , H01L51/05 , H01L51/30 , H01L51/40
摘要： PROBLEM TO BE SOLVED: To significantly improve semiconductor characteristics, by further enhancing performance, of an organic semiconductor element in which performance has been already improved using cardo resin for a gate insulating layer.
SOLUTION: An organic semiconductor element 10 includes a substrate 1, and an organic semiconductor transistor 2 equipped with an organic semiconductor layer 2c which is formed on the substrate and includes organic semiconductor material as well as a gate insulating layer 2b which is formed to adjoin the organic semiconductor layer and includes a cured cardo resin. The gate insulating layer 2b contains a functional additive having a function for decreasing surface energy of the gate insulating layer 2b.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了通过进一步提高性能，通过使用用于栅绝缘层的cardo树脂已经提高了性能的有机半导体元件，显着提高半导体特性。解决方案：有机半导体元件10包括衬底1和有机半导体晶体管2，有机半导体晶体管2配备有形成在衬底上并包括有机半导体材料的有机半导体层2c以及形成的栅极绝缘层2b 邻接有机半导体层并且包括固化的cardo树脂。栅极绝缘层2b含有具有降低栅极绝缘层2b的表面能的功能的功能添加剂。版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2008084940A Manufacturing method of organic semiconductor element 有权
标题翻译：有机半导体元件的制造方法
公开(公告)号：JP2008084940A
公开(公告)日：2008-04-10
申请号：JP2006260653
申请日：2006-09-26
申请人： Dainippon Printing Co Ltd , 大日本印刷株式会社
发明人： NAGAE MITSUTAKA , KOBAYASHI HIRONORI , MATSUOKA MASANAO , HONDA HIROYUKI
IPC分类号： H01L29/786 , H01L21/312 , H01L21/336 , H01L51/05 , H01L51/40
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of an organic semiconductor element which can easily pattern an organic semiconductor layer highly accurately and enables to manufacture an organic semiconductor element having an organic semiconductor transistor with high productivity.
SOLUTION: The manufacturing method of a semiconductor element has an organic semiconductor transistor forming process. The process includes an organic semiconductor layer forming a step of forming an organic semiconductor layer made of an organic semiconductor material on a substrate while using the substrate, a passivation layer forming step of forming a passivation layer having light-shielding performance for a vacuum ultraviolet ray into a pattern on the organic semiconductor layer, and an organic semiconductor layer patterning step of irradiating the passivation layer and the organic semiconductor layer with a vacuum ultraviolet ray to etch the organic semiconductor layer where the passivation layer is not formed. By providing the manufacturing method, the above problem is solved.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供一种能够高精度地容易地图案化有机半导体层的有机半导体元件的制造方法，能够以高生产率制造具有有机半导体晶体管的有机半导体元件。解决方案：半导体元件的制造方法具有有机半导体晶体管形成工艺。该方法包括有机半导体层，形成在使用衬底的同时在衬底上形成由有机半导体材料制成的有机半导体层的步骤;钝化层形成步骤，形成具有用于真空紫外线的遮光性能的钝化层形成有机半导体层上的图案，以及有机半导体层图案化步骤，用真空紫外线照射钝化层和有机半导体层，以蚀刻没有形成钝化层的有机半导体层。通过提供制造方法，解决了上述问题。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2007318025A Organic semiconductor element and manufacturing method thereof element 审中-公开
标题翻译：有机半导体元件及其元件的制造方法
公开(公告)号：JP2007318025A
公开(公告)日：2007-12-06
申请号：JP2006148515
申请日：2006-05-29
申请人： Dainippon Printing Co Ltd , 大日本印刷株式会社
发明人： NAGAE MITSUTAKA , MATSUOKA MASANAO , HONDA HIROYUKI , KOBAYASHI HIRONORI
IPC分类号： H01L29/786 , H01L51/05 , H01L51/30
摘要： PROBLEM TO BE SOLVED: To provide an organic semiconductor element having an organic semiconductor transistor which has high manufacturing efficiency and is excellent in secular stability. SOLUTION: The organic semiconductor element has a substrate, and the organic semiconductor transistor formed on the substrate and provided with an organic semiconductor layer made of an organic semiconductor material and a passivation layer formed on the organic semiconductor layer. The organic semiconductor layer is formed only between the substrate and the passivation layer, and the passivation layer is made of a fluorine-based resin. The semiconductor element is provided to solve the problem. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供具有制造效率高，长期稳定性优异的有机半导体晶体管的有机半导体元件。解决方案：有机半导体元件具有基板，并且有机半导体晶体管形成在基板上并且设置有由有机半导体材料制成的有机半导体层和形成在有机半导体层上的钝化层。有机半导体层仅形成在基板和钝化层之间，钝化层由氟基树脂制成。提供半导体元件来解决问题。版权所有（C）2008，JPO＆INPIT

6. 发明专利

JP2009244581A Mask for vacuum-ultraviolet light, and method and apparatus for manufacturing pattern-formed body using vacuum-ultraviolet light 有权
标题翻译：用于真空紫外线灯的掩模，以及使用真空紫外线灯制造形成图案的体的方法和装置
公开(公告)号：JP2009244581A
公开(公告)日：2009-10-22
申请号：JP2008090794
申请日：2008-03-31
申请人： Dainippon Printing Co Ltd , 大日本印刷株式会社
发明人： MATSUOKA MASANAO , YAMADA JUNICHI , KOBAYASHI HIRONORI , NAGAE MITSUTAKA , HONDA HIROYUKI , OGAWA KENICHI
IPC分类号： G02B5/20 , G03F1/00 , G03F1/68 , G03F1/80 , G03F7/20 , H01L21/027 , H01L51/50 , H05B33/10
摘要： PROBLEM TO BE SOLVED: To provide a metal mask for vacuum-ultraviolet light, by which a pattern-formed body can be manufactured with high sensitivity, wherein the pattern-formed body is accurately subjected to vacuum-ultraviolet light radiation by using the vacuum-ultraviolet light in a high-definition and complex pattern. SOLUTION: The metal mask 10 for vacuum-ultraviolet light is used for the method of manufacturing the pattern-formed body whose pattern-forming surface is subjected to the vacuum-ultraviolet light radiation in a pattern by: using a substrate for forming the pattern; arranging the metal mask on the pattern-forming surface of the substrate for forming the pattern; and irradiating the pattern-forming surface with the vacuum-ultraviolet light through the metal mask in the presence of a reactant gas. The metal mask includes: a metal mask body 1 consisting of a metal thin plate and having an opening 2; and a bridge portion 3 formed to form a bridge across the opening, wherein the bridge portion is formed so that an air gap through which the reactant gas can be passed is formed between the pattern-forming surface and the bridge portion when the bridge portion is arranged on the substrate 101 for forming the pattern. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供真空紫外光的金属掩模，通过该金属掩模可以以高灵敏度制造图案形成体，其中图案形成体通过使用被精确地经受真空紫外光辐射真空紫外线以高清晰度和复杂的图案。解决方案：用于真空紫外光的金属掩模10用于制造图案形成体的方法，该图案形成体的图案形成表面经受真空紫外光辐射，图案是：使用形成用基板模式; 将金属掩模布置在用于形成图案的基板的图案形成表面上; 并在反应气体的存在下通过金属掩模用真空紫外线照射图案形成表面。金属掩模包括：由金属薄板构成并具有开口2的金属掩模体1; 以及形成为跨过开口形成桥的桥接部3，其中桥部形成为当桥部为桥接部时，在图案形成面与桥部之间形成有通过反应气体的气隙布置在基板101上以形成图案。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2009084596A Manufacturing method of metal pattern forming body 有权
标题翻译：金属图案形成体的制造方法
公开(公告)号：JP2009084596A
公开(公告)日：2009-04-23
申请号：JP2007252166
申请日：2007-09-27
申请人： Dainippon Printing Co Ltd , 大日本印刷株式会社
发明人： NAGAE MITSUTAKA , KOBAYASHI HIRONORI , MATSUOKA MASANAO , HONDA HIROYUKI , TSURUOKA YOSHIAKI
IPC分类号： C23C18/20 , H01L21/288
摘要： PROBLEM TO BE SOLVED: To provide a metal pattern forming body manufacturing method capable of manufacturing a metal pattern forming body having the excellent adhesiveness of a metal pattern to a plastic substrate with high productivity by using the silver mirror reaction, and to provide a pattern forming body manufacturing method capable of manufacturing a pattern forming body subjected to the highly precise pattern-shaped vacuum ultraviolet ray application treatment by using vacuum ultraviolet ray with high sensitivity.
SOLUTION: The metal pattern forming body manufacturing method comprises: a vacuum ultraviolet ray application step of using a plastic substrate and applying the vacuum ultraviolet ray to a surface of the plastic substrate; a metallic film forming step of forming a metallic film by using the silver mirror reaction on the vacuum ultraviolet ray application surface of the plastic substrate with the vacuum ultraviolet ray applied thereto; and a metallic film patterning step of patterning the metallic film formed by the metallic film forming step.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供一种能够通过使用银镜反应以高生产率制造具有优异的金属图案与塑料基板的粘附性的金属图案形成体的金属图案形成体制造方法，并且提供一种图案形成体制造方法，其能够通过使用具有高灵敏度的真空紫外线来制造经受高精度图案形真空紫外线施加处理的图案形成体。解决方案：金属图案形成体的制造方法包括：真空紫外线施加步骤，使用塑料基板并将真空紫外线施加到塑料基板的表面; 金属膜形成步骤，通过在其上施加真空紫外线，在塑料基板的真空紫外线施加表面上使用银镜反应形成金属膜; 以及对通过金属膜形成步骤形成的金属膜进行图案化的金属膜图案化步骤。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2009076792A Organic semiconductor element, manufacturing method thereof, organic transistor array, and display 有权
标题翻译：有机半导体元件，其制造方法，有机晶体管阵列和显示器
公开(公告)号：JP2009076792A
公开(公告)日：2009-04-09
申请号：JP2007246250
申请日：2007-09-21
申请人： Dainippon Printing Co Ltd , 大日本印刷株式会社
发明人： HONDA HIROYUKI , KOBAYASHI HIRONORI , MATSUOKA MASANAO , NAGAE MITSUTAKA
IPC分类号： H01L21/336 , H01L29/786 , H01L51/05
摘要： PROBLEM TO BE SOLVED: To provide an organic semiconductor element of high productivity, including an organic semiconductor transistor of high transistor performance by having a gate insulating layer with constant thickness and smooth surface.
SOLUTION: The organic semiconductor element includes a substrate, a source electrode and drain electrode formed on the substrate, an insulating barrier wall which is made of an insulating material and is formed on the source electrode and drain electrode, with the above part of a channel region consisting of the source electrode and the drain electrode being opened, an organic semiconductor layer of organic semiconductor material which is present in the opening of the insulating barrier wall, is formed on the source electrode and the drain electrode, a gate insulating layer of insulating resin material which is formed on the organic semiconductor layer, and a gate electrode formed on the gate insulating layer. The gate insulating layer is so formed as to be integral with an inter-layer insulating layer.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决问题：提供一种高生产率的有机半导体元件，包括具有高的晶体管性能的有机半导体晶体管，通过具有一个具有恒定厚度和光滑表面的栅绝缘层。解决方案：有机半导体元件包括在基板上形成的基板，源电极和漏电极，由绝缘材料制成并形成在源电极和漏电极上的绝缘阻挡壁，上述部分由源极电极和漏极电极构成的沟道区域被开放，存在于绝缘阻挡壁的开口部中的有机半导体材料的有机半导体层形成在源电极和漏电极上，栅绝缘层形成在有机半导体层上的绝缘树脂材料层和形成在栅极绝缘层上的栅电极。栅极绝缘层形成为与层间绝缘层成一体。版权所有（C）2009，JPO＆INPIT

9. 发明专利

JP2008091564A Organic semiconductor element and its fabrication process 有权
标题翻译：有机半导体元件及其制造工艺
公开(公告)号：JP2008091564A
公开(公告)日：2008-04-17
申请号：JP2006269872
申请日：2006-09-29
申请人： Dainippon Printing Co Ltd , 大日本印刷株式会社
发明人： MATSUOKA MASANAO , NAGAE MITSUTAKA , HONDA HIROYUKI , KOBAYASHI HIRONORI
IPC分类号： H01L29/786 , H01L21/312 , H01L51/05 , H01L51/30 , H01L51/40
摘要： PROBLEM TO BE SOLVED: To provide an organic semiconductor element having an organic semiconductor transistor which can be fabricated with high efficiency while exhibiting excellent transistor characteristics. SOLUTION: In the organic semiconductor element having an organic semiconductor transistor comprising a substrate, a gate electrode formed on the substrate, a gate insulating layer formed to cover the gate electrode, an organic semiconductor layer formed of an organic semiconductor material on the gate insulating layer in contact therewith, and a source electrode and a drain electrode formed in contact with the organic semiconductor layer, the gate insulating layer has an insulating photocatalyst layer containing binder resin and photocatalyst exhibiting insulation, and a silicon compound layer formed of an organic silane compound on the insulating photocatalyst layer. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有有机半导体晶体管的有机半导体元件，该半导体晶体管可以高效率地制造，同时具有优异的晶体管特性。解决方案：在具有包括基板的有机半导体晶体管的有机半导体元件中，形成在基板上的栅电极，形成为覆盖栅电极的栅极绝缘层，由有机半导体材料形成的有机半导体层栅极绝缘层，以及与有机半导体层形成的源电极和漏电极，栅绝缘层具有包含粘合剂树脂的绝缘光催化剂层和显示绝缘性的光催化剂，以及由有机半导体层形成的硅化合物层硅烷化合物在绝缘光催化层上。版权所有（C）2008，JPO＆INPIT

10. 发明专利

JP2006344719A MATERIAL, STRUCTURE, AND DEVICE FOR ORGANIC SEMICONDUCTOR 审中-公开
公开(公告)号：JP2006344719A
公开(公告)日：2006-12-21
申请号：JP2005168029
申请日：2005-06-08
申请人： DAINIPPON PRINTING CO LTD
发明人： SUGAWARA SHIGERU , MAEDA HIROMI , TOMINO TAKESHI , MATSUOKA MASANAO
IPC分类号： H01L51/05 , C08G61/12 , H01L21/336 , H01L29/786 , H01L51/30 , H01L51/50
摘要： PROBLEM TO BE SOLVED: To provide an organic semiconductor material for easily forming a film by application or the like while being stable during the film-formation. SOLUTION: The organic semiconductor material has a structure of formula 1 in which planarity of A1-X-A2 collapses due to steric hindrance between B1, B2 and X. In formula 1, each of A1, A2, B1, B2, and X includes 6π-electron rings, 8π-electron rings, 10π-electron rings, 12π-electron rings, 14π-electron rings, 16π-electron rings, 18π-electron rings, 20π-electron rings, 22π-electron rings, 24π-electron rings, and 26π-electron rings. COPYRIGHT: (C)2007,JPO&INPIT

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