会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 4. 发明专利
    • Light antireflection article
    • 光反应文章
    • JP2013142823A
    • 2013-07-22
    • JP2012003577
    • 2012-01-11
    • Dainippon Printing Co Ltd大日本印刷株式会社
    • WADA AKINORIMIYAZAKI YUICHIABE MAKOTOSHIMIZU TOSHIHITOHARITO KAZUKIYAGUCHI TAKASHIOHASHI YOICHIRO
    • G02B1/11G02B1/118
    • PROBLEM TO BE SOLVED: To provide a light antireflection article improving a streaky defect 3 caused by strings of internal air bubbles G numerously aligned in one direction, inside an antireflection layer having a light antireflection structure composed of numerous minute projections.SOLUTION: In an antireflection article 10, an antireflection layer 2 having numerous minute projections 2t is laminated in a belt-like manner on a surface of a curable resin layer 2r, making contact with a belt-like transparent base material 1. The minute projections form an antireflection structure that satisfies: maximum interval Pmax=Pave+3σ≤λmax=maximum wavelength of visible light wavelength band area 780nm, with regard to an average value Pave of intervals P between highest protrusions thereof and a standard deviation σ. An inner area of at least 8 W/10 of the antireflection layer is defined by removing areas of maximum W/10 from both ends in width direction with regard to a layer width W in width direction perpendicular to a longer direction of the antireflection layer. The inner area includes no streaky defects 3 caused by strings of internal air bubbles G whose size is 5 μm or larger aligned in plurality in the longer direction.
    • 要解决的问题:提供一种改善由具有由多个微小突起组成的光抗反射结构的抗反射层内的在一个方向上逐个排列的内部气泡G串引起的条纹缺陷3的光抗反射物品。解决方案:在抗反射 如图10所示,具有多个微小突起2t的防反射层2以带状方式层叠在固化树脂层2r的表面上,与带状透明基材1接触。微小突起形成防反射结构, 满足:最大间隔Pmax = Pave + 3&sgr;≤λmax=可见光波长带区域的最大波长780nm,关于其最高突起之间的间隔P的平均值Pave与标准偏差&sgr。 防反射层的至少8W / 10的内部区域相对于与防反射层的较长方向垂直的宽度方向上的层宽度W从宽度方向的两端去除最大W / 10的面积来定义。 内部区域不包括长度方向上排列多个尺寸的5μm以上的内部气泡G的串的条纹缺陷3。
    • 6. 发明专利
    • Solid-state imaging device and manufacturing method thereof, and imaging apparatus using solid state imaging device
    • 固态成像装置及其制造方法以及使用固态成像装置的成像装置
    • JP2012054565A
    • 2012-03-15
    • JP2011204159
    • 2011-09-20
    • Dainippon Printing Co Ltd大日本印刷株式会社
    • MATSUI HIROYUKIKURIHARA MASAAKIABE MAKOTO
    • H01L27/14G02B3/00H04N5/369H04N9/07
    • PROBLEM TO BE SOLVED: To provide a solid state imaging device and a manufacturing method thereof having a wave-guiding structure with shading suppressed.SOLUTION: A center position of each micro lens 12, or a center position of each micro lens and a center position of each color filter 10 are made to be shifted in the direction of a center section of an effective imaging region from the corresponding center of a photo detector 3. This shift amount is made to be set by multiplying an aberration correction coefficient a by an assumption shift amount acquired from the difference between a position corresponding to the center of the photo detector and a position on an optical light path which is calculated assuming to take an optical path which deflects according to a difference in refractive indexes of materials in both sides of the boundary and reaches the entrance center of a waveguide 15. This aberration correction coefficient a is made to be in the range of 0.46≤a≤0.81 when only the center position of each micro lens has been shifted, and in the range of 0.59≤a≤1.34 when the center position of each micro lens and the center position of each color filter have been shifted.
    • 要解决的问题:提供一种具有抑制了阴影的波导结构的固态成像装置及其制造方法。 解决方案:使每个微透镜12的中心位置或每个微透镜的中心位置和每个滤色器10的中心位置在有效成像区域的中心部分的方向上从第 通过将像差校正系数a乘以从与光检测器的中心相对应的位置与光检测器的位置之间的差获得的假设移动量来设定该偏移量 计算出的路径,假设取得根据边界两侧的材料的折射率差而偏转的光路,并到达波导15的入口中心。该像差校正系数a被设定在 当每个微透镜的中心位置仅偏移时,0.46≤a≤0.81,当每个微透镜的中心位置和中心处于0.59≤a≤1.34的范围内 每个滤色器的位置已经移动。 版权所有(C)2012,JPO&INPIT
    • 7. 发明专利
    • Method of manufacturing antireflection film manufacturing mold
    • 制造抗反射膜制造模具的方法
    • JP2011161713A
    • 2011-08-25
    • JP2010025273
    • 2010-02-08
    • Dainippon Printing Co Ltd大日本印刷株式会社
    • ABE MAKOTOIMAMURA YOSUKE
    • B29C33/38G02B1/11
    • PROBLEM TO BE SOLVED: To provide a method of manufacturing an antireflection film manufacturing mold manufacturing the antireflection film manufacturing mold formed with uniform fine holes by an anode oxidation process even when using a metal base body with an uneven crystal state and surface shape.
      SOLUTION: The method of manufacturing the antireflection film manufacturing mold includes a fine hole forming process of forming the fine holes on the surface of the metal base body by anode oxidation, using the metal base body containing aluminum, and having an uneven layer with the uneven crystal state or surface shape, and in the fine hole forming process, a part of alumina film is etched.
      COPYRIGHT: (C)2011,JPO&INPIT
    • 要解决的问题:提供一种制造抗反射膜制造模具的方法,即使在使用具有不均匀晶体状态和表面形状的金属基体时,通过阳极氧化工艺制造形成均匀的细孔的抗反射膜制造模具 。 解决方案:制造抗反射膜制造模具的方法包括:使用含有铝的金属基体,通过阳极氧化在金属基体的表面上形成微孔并具有不均匀层的细孔形成工艺 具有不均匀的晶体状态或表面形状,并且在细孔形成工艺中,蚀刻一部分氧化铝膜。 版权所有(C)2011,JPO&INPIT
    • 8. 发明专利
    • Method and device for evaluating adhesion of pattern
    • 用于评估图案粘合的方法和装置
    • JP2009229161A
    • 2009-10-08
    • JP2008072904
    • 2008-03-21
    • Dainippon Printing Co Ltd大日本印刷株式会社
    • KURIHARA MASAAKIABE MAKOTOHATAKEYAMA SHO
    • G01N19/04G03F1/84G03F7/26H01L21/027
    • PROBLEM TO BE SOLVED: To provide a method and device for evaluating adhesion of a pattern for quantitatively measuring the adhesion without generating a shear in the fine pattern, in evaluating the adhesion between the fine pattern, such as a resist pattern and a light shielding film pattern of a photomask used for producing semiconductors, and a base substrate.
      SOLUTION: In the method of evaluating adhesion of the pattern by measuring the adhesion of the pattern formed on the surface of a substrate by scanning while keeping a probe disposed on a cantilever of an atomic force microscope away from the surface of the substrate, the probe is configured with a base for installing the probe to the cantilever and a tip for contacting the pattern, and the base and the tip form a neck, wherein the base makes a continuous sloping face in the vertical direction from the cantilever toward the neck, and the tip has a shape in which the maximum width of the side contacting the side face of the pattern is the same width as the width of the neck or larger.
      COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:提供一种用于评估用于定量测量粘附性而不产生精细图案中的剪切的图案的粘合性的方法和装置,在评估诸如抗蚀剂图案的精细图案和 用于制造半导体的光掩模的遮光膜图案和基底基板。 解决方案:在通过扫描同时保持设置在原子力显微镜的悬臂上的探针离开衬底的表面的同时测量形成在衬底的表面上的图案的粘附性来评估图案的附着的方法中 探头配置有用于将探针安装到悬臂的基座和用于接触图案的尖端,并且基部和尖端形成颈部,其中,基座从悬臂向着垂直方向形成连续的倾斜面 颈部,并且尖端具有与图案的侧面接触的一侧的最大宽度与颈部的宽度相同的宽度或更大的形状。 版权所有(C)2010,JPO&INPIT
    • 9. 发明专利
    • Pattern size/shape measuring method
    • 图案尺寸/形状测量方法
    • JP2009216490A
    • 2009-09-24
    • JP2008059291
    • 2008-03-10
    • Dainippon Printing Co Ltd大日本印刷株式会社
    • KURIHARA MASAAKIABE MAKOTOHATAKEYAMA SHO
    • G01Q60/42G01Q70/18
    • PROBLEM TO BE SOLVED: To provide a pattern size/shape measuring method for acquiring an accurate pattern size or shape by reducing wear of a probe through modifying the surface quality of the probe or the surface quality of a specimen for measurement by using a relatively simple method.
      SOLUTION: In this pattern size/shape measuring method, the probe provided on a cantilever is caused to scan the surface of the specimen, thereby measuring the size or shape of a pattern on the specimen surface. This measuring method is characterized in that measurement is performed after enhancing the wear resistance of an end part of the probe by hydrophobizing at least either an end part surface of the probe or the specimen surface.
      COPYRIGHT: (C)2009,JPO&INPIT
    • 要解决的问题:提供一种图案尺寸/形状测量方法,用于通过改变探针的表面质量或通过使用测量样品的表面质量来降低探针的磨损来获得精确的图案尺寸或形状 一个比较简单的方法。

      解决方案:在该图案尺寸/形状测量方法中,使悬臂上提供的探针扫描样品表面,从而测量样品表面上的图案的尺寸或形状。 该测量方法的特征在于,通过使探针的端部表面或样品表面中的至少一个疏水化,在增强探针的端部的耐磨性之后进行测量。 版权所有(C)2009,JPO&INPIT

    • 10. 发明专利
    • Photocatalyst lithography method and template used therefor
    • 光化学方法及其使用的模板
    • JP2008224781A
    • 2008-09-25
    • JP2007059320
    • 2007-03-09
    • Dainippon Printing Co Ltd大日本印刷株式会社
    • ABE MAKOTO
    • G03F7/20B01J35/02B01J35/04B01J37/12
    • PROBLEM TO BE SOLVED: To provide a photocatalyst lithography method using a template provided with a predetermined pattern made of a photocatalyst on a light-transmissive substrate, the photocatalyst lithography method being characterized in that a high-precision fine pattern with a high contrast can be formed on a work surface in a short time; and to provide the template used therefor. SOLUTION: The photocatalyst lithography method using the template 10 having the pattern 12 made of a photocatalyst on one main surface of the light-transmissive substrate is characterized in that the pattern 12 made of the photocatalyst has a gap portion, the other main surface side of the light-transmissive substrate is irradiated with ultraviolet rays or visible light 14 while the pattern side of the template 10 is brought into contact with the work 13 to generate active species 15 on the pattern 12 through photocatalytic reaction, and the work surface is etched or modified 16 into the pattern shape of the template with the active species 15. COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:为了提供一种使用在光透过基板上设置有由光催化剂制成的预定图案的模板的光催化剂光刻方法,光催化剂光刻方法的特征在于,具有高精度的高精度精细图案 可以在短时间内在工作面上形成对比度; 并提供用于此的模板。 解决方案:使用具有由光催化剂制成的图案12的模板10的光催化剂光刻方法,其特征在于,由光催化剂制成的图案12具有间隙部分,另一个主体 在透光性基板的表面侧照射紫外线或可见光14,同时模板10的图案侧与工件13接触,通过光催化反应在图案12上产生活性物质15,工作表面 被蚀刻或修饰16成为具有活性物质15的模板的图案形状。版权所有(C)2008,JPO&INPIT