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    • 10. 发明专利
    • Metal oxide semiconductor particle dispersion body composition and semiconductor
    • 金属氧化物半导体颗粒分散体组成和半导体
    • JP2013115132A
    • 2013-06-10
    • JP2011257954
    • 2011-11-25
    • Dai Ichi Kogyo Seiyaku Co Ltd第一工業製薬株式会社
    • IKE NAOKISAITO YASUTERU
    • H01L21/368B82Y30/00H01B1/20
    • PROBLEM TO BE SOLVED: To provide a metal oxide semiconductor particle dispersion body composition from which a semiconductor film having excellent compactness, uniformity and surface smoothness can be obtained by a simple method while reducing the amount of dispersant.SOLUTION: The metal oxide semiconductor particle dispersion body composition contains metal oxide semiconductor particles having an average particle size of 1-100 nm, a dispersant consisting of a compound shown by formula (1), and a solvent. In the formula (1), R is an alkyl radical or an alkenyl group of 3-24C, AO is an oxyalkylene group of 1-4C, n is a number in the range of 5-30 indicating the average additional mol number, and X is a coupling group consisting of a carbon atom, a hydrogen atom and/or an oxygen atom.
    • 要解决的问题:提供一种金属氧化物半导体颗粒分散体组合物,通过简单的方法可以获得具有优异的致密性,均匀性和表面平滑性的半导体膜,同时减少分散剂的量。 解决方案:金属氧化物半导体颗粒分散体组合物含有平均粒度为1-100nm的金属氧化物半导体颗粒,由式(1)表示的化合物组成的分散剂和溶剂。 式(1)中,R为3〜24位的烷基或烯基,AO为1-4C的氧化烯基,n为5〜30的数,表示平均的附加摩尔数, X是由碳原子,氢原子和/或氧原子组成的偶合基团。 版权所有(C)2013,JPO&INPIT