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1. 发明授权

US07625795B2 Container capacitor structure and method of formation thereof 失效
标题翻译：集装箱电容器结构及其形成方法
公开(公告)号：US07625795B2
公开(公告)日：2009-12-01
申请号：US11217742
申请日：2005-09-01
申请人： D. Mark Durcan , Trung T. Doan , Roger R. Lee , Fernando Gonzalez , Er-Xuan Ping
发明人： D. Mark Durcan , Trung T. Doan , Roger R. Lee , Fernando Gonzalez , Er-Xuan Ping
IPC分类号： H01L21/8242
CPC分类号： H01L28/91 , H01L27/10811 , H01L27/10817 , H01L27/10852 , H01L27/10888 , H01L28/65 , Y10S257/905
摘要： Container capacitor structure and method of construction. An etch mask and etch are used to expose portions of an exterior surface of an electrode (“bottom electrodes”) of the structure. The etch provides a recess between proximal pairs of container capacitor structures, which is available for forming additional capacitance. A capacitor dielectric and top electrode are formed on and adjacent to, respectively, both an interior surface and portions of the exterior surface of the first electrode. Surface area common to both the first electrode and second electrodes is increased over using only the interior surface, providing additional capacitance without decreasing spacing for clearing portions of the capacitor dielectric and the second electrode away from a contact hole location. Clearing of the capacitor dielectric and the second electrode portions may be done at an upper location of a substrate assembly in contrast to clearing at a bottom location of a contact via.
摘要翻译：集装箱电容器结构及其施工方法。蚀刻掩模和蚀刻用于暴露结构的电极（“底部电极”）的外表面的部分。蚀刻在容器电容器结构的近端对之间提供凹槽，其可用于形成额外的电容。电容器电介质和顶电极分别形成在第一电极的内表面和外表面的两个部分上并与其相邻。第一电极和第二电极两者共同的表面积仅通过使用内表面增加，提供额外的电容而不减小用于清除电容器电介质部分和第二电极远离接触孔位置的间隔。电容器电介质和第二电极部分的清除可以在衬底组件的上部位置进行，与在接触通孔的底部位置处的清除相反。

2. 发明授权

US07579235B2 Container capacitor structure and method of formation thereof 失效
公开(公告)号：US07579235B2
公开(公告)日：2009-08-25
申请号：US11545252
申请日：2006-10-10
申请人： D. Mark Durcan , Trung T. Doan , Roger R. Lee , Fernando Gonzalez , Er-Xuan Ping
发明人： D. Mark Durcan , Trung T. Doan , Roger R. Lee , Fernando Gonzalez , Er-Xuan Ping
IPC分类号： H01L21/8242
CPC分类号： H01L28/91 , H01L27/10811 , H01L27/10817 , H01L27/10852 , H01L27/10888 , H01L28/65 , Y10S257/905
摘要： Disclosed is a container capacitor structure and method of constructing it. An etch mask and etch are used to expose portions of an exterior surface of electrode (“bottom electrodes”) of the container capacitor structure. The etch provides a recess between proximal pairs of container capacitor structures, which recess is available for forming additional capacitance. Accordingly, a capacitor dielectric and a top electrode are formed on and adjacent to, respectively, both an interior surface and portions of the exterior surface of the first electrode. Advantageously, surface area common to both the first electrode and second electrodes is increased over using only the interior surface, which provides additional capacitance without a decrease in spacing for clearing portions of the capacitor dielectric and the second electrode away from a contact hole location. Furthermore, such clearing of the capacitor dielectric and the second electrode portions may be done at an upper location of a substrate assembly in contrast to clearing at a bottom location of a contact via.

3. 发明授权

US06329263B1 Method of forming a container capacitor structure 失效
标题翻译：形成容器电容器结构的方法
公开(公告)号：US06329263B1
公开(公告)日：2001-12-11
申请号：US09653259
申请日：2000-08-31
申请人： D. Mark Durcan , Trung T. Doan , Roger R. Lee , Fernando Gonzalez , Er-Xuan Ping
发明人： D. Mark Durcan , Trung T. Doan , Roger R. Lee , Fernando Gonzalez , Er-Xuan Ping
IPC分类号： H01L2120
CPC分类号： H01L28/91 , H01L27/10811 , H01L27/10817 , H01L27/10852 , H01L27/10888 , H01L28/65 , Y10S257/905
摘要： Disclosed is a container capacitor structure and method of constructing it. An etch mask and etch are used to expose portions of an exterior surface of electrode (“bottom electrodes”) of the container capacitor structure. The etch provides a recess between proximal pairs of container capacitor structures, which recess is available for forming additional capacitance. Accordingly, a capacitor dielectric and a top electrode are formed on and adjacent to, respectively, both an interior surface and portions of the exterior surface of the first electrode. Advantageously, surface area common to both the first electrode and second electrodes is increased over using only the interior surface, which provides additional capacitance without a decrease in spacing for clearing portions of the capacitor dielectric and the second electrode away from a contact hole location. Furthermore, such clearing of the capacitor dielectric and the second electrode portions may be done at an upper location of a substrate assembly in contrast to clearing at a bottom location of a contact via.
摘要翻译：公开了一种容器电容器结构及其构造方法。蚀刻掩模和蚀刻用于暴露容器电容器结构的电极（“底部电极”）的外部表面的部分。蚀刻在容器电容器结构的近端对之间提供凹槽，该凹槽可用于形成额外的电容。因此，电容器电介质和顶电极分别形成在第一电极的外表面的内表面和部分上并相邻。有利地，仅使用内表面增加了第一电极和第二电极两者共同的表面积，这提供了额外的电容，而不会减小用于清除电容器电介质部分和第二电极远离接触孔位置的间隔。此外，与在接触通孔的底部位置处的清除相反，电容器电介质和第二电极部分的这种清除可以在衬底组件的上部位置进行。

4. 发明申请

US20090311843A1 CONTAINER CAPACITOR STRUCTURE AND METHOD OF FORMATION THEREOF 失效
标题翻译：集装箱电容器结构及其形成方法
公开(公告)号：US20090311843A1
公开(公告)日：2009-12-17
申请号：US12547197
申请日：2009-08-25
申请人： D. Mark Durcan , Trung T. Doan , Roger R. Lee , Fernando Gonzalez , Er-Xuan Ping
发明人： D. Mark Durcan , Trung T. Doan , Roger R. Lee , Fernando Gonzalez , Er-Xuan Ping
IPC分类号： H01L21/02
CPC分类号： H01L28/91 , H01L27/10811 , H01L27/10817 , H01L27/10852 , H01L27/10888 , H01L28/65 , Y10S257/905
摘要： Disclosed is a container capacitor structure and method of constructing it. An etch mask and etch are used to expose portions of an exterior surface of electrode (“bottom electrodes”) of the container capacitor structure. The etch provides a recess between proximal pairs of container capacitor structures, which recess is available for forming additional capacitance. Accordingly, a capacitor dielectric and a top electrode are formed on and adjacent to, respectively, both an interior surface and portions of the exterior surface of the first electrode. Advantageously, surface area common to both the first electrode and second electrodes is increased over using only the interior surface, which provides additional capacitance without a decrease in spacing for clearing portions of the capacitor dielectric and the second electrode away from a contact hole location. Furthermore, such clearing of the capacitor dielectric and the second electrode portions may be done at an upper location of a substrate assembly in contrast to clearing at a bottom location of a contact via.
摘要翻译：公开了一种容器电容器结构及其构造方法。蚀刻掩模和蚀刻用于暴露容器电容器结构的电极（“底部电极”）的外部表面的部分。蚀刻在容器电容器结构的近端对之间提供凹槽，该凹槽可用于形成额外的电容。因此，电容器电介质和顶电极分别形成在第一电极的外表面的内表面和部分上并相邻。有利地，仅使用内表面增加了第一电极和第二电极两者共同的表面积，这提供了额外的电容，而不会减小用于清除电容器电介质部分和第二电极远离接触孔位置的间隔。此外，与在接触通孔的底部位置处的清除相反，电容器电介质和第二电极部分的这种清除可以在衬底组件的上部位置进行。

5. 发明授权

US06608342B1 Container capacitor structure and method of formation thereof 失效
公开(公告)号：US06608342B1
公开(公告)日：2003-08-19
申请号：US09652852
申请日：2000-08-31
申请人： D. Mark Durcan , Trung T. Doan , Roger R. Lee , Fernando Gonzalez , Er-Xuan Ping
发明人： D. Mark Durcan , Trung T. Doan , Roger R. Lee , Fernando Gonzalez , Er-Xuan Ping
IPC分类号： H01L27108
CPC分类号： H01L28/91 , H01L27/10811 , H01L27/10817 , H01L27/10852 , H01L27/10888 , H01L28/65 , Y10S257/905
摘要： Disclosed is a container capacitor structure and method of constructing it. An etch mask and etch are used to expose portions of an exterior surface of electrode (“bottom electrodes”) of the container capacitor structure. The etch provides a recess between proximal pairs of container capacitor structures, which recess is available for forming additional capacitance. Accordingly, a capacitor dielectric and a top electrode are formed on and adjacent to, respectively, both an interior surface and portions of the exterior surface of the first electrode. Advantageously, surface area common to both the first electrode and second electrodes is increased over using only the interior surface, which provides additional capacitance without a decrease in spacing for clearing portions of the capacitor dielectric and the second electrode away from a contact hole location. Furthermore, such clearing of the capacitor dielectric and the second electrode portions may be done at an upper location of a substrate assembly in contrast to clearing at a bottom location of a contact via.

6. 发明授权

US6159818A Method of forming a container capacitor structure 有权
标题翻译：形成容器电容器结构的方法
公开(公告)号：US6159818A
公开(公告)日：2000-12-12
申请号：US389866
申请日：1999-09-02
申请人： D. Mark Durcan , Trung T. Doan , Roger R. Lee , Fernando Gonzalez , Er-Xuan Ping
发明人： D. Mark Durcan , Trung T. Doan , Roger R. Lee , Fernando Gonzalez , Er-Xuan Ping
IPC分类号： H01L21/02 , H01L21/8242 , H01L27/108 , H01L21/20
CPC分类号： H01L28/91 , H01L27/10811 , H01L27/10817 , H01L27/10852 , H01L27/10888 , H01L28/65 , Y10S257/905
摘要： Disclosed is a container capacitor structure and method of constructing it. An etch mask and etch are used to expose portions of an exterior surface of electrode ("bottom electrodes") of the container capacitor structure. The etch provides a recess between proximal pairs of container capacitor structures, which recess is available for forming additional capacitance. Accordingly, a capacitor dielectric and a top electrode are formed on and adjacent to, respectively, both an interior surface and portions of the exterior surface of the first electrode. Advantageously, surface area common to both the first electrode and second electrodes is increased over using only the interior surface, which provides additional capacitance without a decrease in spacing for clearing portions of the capacitor dielectric and the second electrode away from a contact hole location. Furthermore, such clearing of the capacitor dielectric and the second electrode portions may be done at an upper location of a substrate assembly in contrast to clearing at a bottom location of a contact via.
摘要翻译：公开了一种容器电容器结构及其构造方法。蚀刻掩模和蚀刻用于暴露容器电容器结构的电极（“底部电极”）的外部表面的部分。蚀刻在容器电容器结构的近端对之间提供凹槽，该凹槽可用于形成额外的电容。因此，电容器电介质和顶电极分别形成在第一电极的外表面的内表面和部分上并相邻。有利地，仅使用内表面增加了第一电极和第二电极两者共同的表面积，这提供了额外的电容，而不会减小用于清除电容器电介质部分和第二电极远离接触孔位置的间隔。此外，与在接触通孔的底部位置处的清除相反，电容器电介质和第二电极部分的这种清除可以在衬底组件的上部位置进行。

7. 发明授权

US08124491B2 Container capacitor structure and method of formation thereof 失效
标题翻译：集装箱电容器结构及其形成方法
公开(公告)号：US08124491B2
公开(公告)日：2012-02-28
申请号：US12547197
申请日：2009-08-25
申请人： D. Mark Durcan , Trung T. Doan , Roger R. Lee , Fernando Gonzalez
发明人： D. Mark Durcan , Trung T. Doan , Roger R. Lee , Fernando Gonzalez
IPC分类号： H01L21/8242
CPC分类号： H01L28/91 , H01L27/10811 , H01L27/10817 , H01L27/10852 , H01L27/10888 , H01L28/65 , Y10S257/905
摘要： Disclosed is a container capacitor structure and method of constructing it. An etch mask and etch are used to expose portions of an exterior surface of electrode (“bottom electrodes”) of the container capacitor structure. The etch provides a recess between proximal pairs of container capacitor structures, which recess is available for forming additional capacitance. Accordingly, a capacitor dielectric and a top electrode are formed on and adjacent to, respectively, both an interior surface and portions of the exterior surface of the first electrode. Advantageously, surface area common to both the first electrode and second electrodes is increased over using only the interior surface, which provides additional capacitance without a decrease in spacing for clearing portions of the capacitor dielectric and the second electrode away from a contact hole location. Furthermore, such clearing of the capacitor dielectric and the second electrode portions may be done at an upper location of a substrate assembly in contrast to clearing at a bottom location of a contact via.
摘要翻译：公开了一种容器电容器结构及其构造方法。蚀刻掩模和蚀刻用于暴露容器电容器结构的电极（“底部电极”）的外部表面的部分。蚀刻在容器电容器结构的近端对之间提供凹槽，该凹槽可用于形成额外的电容。因此，电容器电介质和顶电极分别形成在第一电极的外表面的内表面和部分上并相邻。有利地，仅使用内表面增加了第一电极和第二电极两者共同的表面积，这提供了额外的电容，而不会减小用于清除电容器电介质部分和第二电极远离接触孔位置的间隔。此外，与在接触通孔的底部位置处的清除相反，电容器电介质和第二电极部分的这种清除可以在衬底组件的上部位置进行。

8. 发明授权

US06620680B2 Method of forming a contact structure and a container capacitor structure 有权
公开(公告)号：US06620680B2
公开(公告)日：2003-09-16
申请号：US10080465
申请日：2002-02-22
申请人： D. Mark Durcan , Trung T. Doan , Roger R. Lee , Fernando Gonzalez
发明人： D. Mark Durcan , Trung T. Doan , Roger R. Lee , Fernando Gonzalez
IPC分类号： H01L218242
CPC分类号： H01L27/10888 , H01L27/10811 , H01L27/10852 , H01L28/91
摘要： Method for forming at least a portion of a top electrode of a container capacitor and at least a portion of a contact plug in one deposition are described. In one embodiment, the top electrode is formed interior to a bottom electrode of the container capacitor. In another embodiment, the top electrode is formed interior to, and exterior and below a portion of the bottom electrode of the container capacitor. The method of forming a top electrode of a container capacitor and a contact plug with a same deposition is particularly well-suited for high-density memory array formation.

9. 发明授权

US06391735B1 Container capacitor structure 失效
标题翻译：集装箱电容器结构
公开(公告)号：US06391735B1
公开(公告)日：2002-05-21
申请号：US09653226
申请日：2000-08-31
申请人： D. Mark Durcan , Trung T. Doan , Roger R. Lee , Fernando Gonzalez
发明人： D. Mark Durcan , Trung T. Doan , Roger R. Lee , Fernando Gonzalez
IPC分类号： H01L2120
CPC分类号： H01L28/91 , H01L27/10811 , H01L27/10817 , H01L27/10852 , H01L27/10888 , H01L28/65 , Y10S257/905
摘要： Disclosed is a container capacitor structure and method of constructing it. An etch mask and etch are used to expose portions of an exterior surface of electrode (“bottom electrodes”) of the container capacitor structure. The etch provides a recess between proximal pairs of container capacitor structures which recess is available for forming additional capacitance. Accordingly, a capacitor dielectric and a top electrode are formed on and adjacent to, respectively, both an interior surface and portions of the exterior surface of the first electrode. Advantageously, surface area common to both the first electrode and second electrodes is increased over using only the interior surface, which provides additional capacitance without a decrease in spacing for clearing portions of the capacitor dielectric and the second electrode away from a contact hole location. Furthermore, such clearing of the capacitor dielectric and the second electrode portions may be done at an upper location of a substrate assembly in contrast to clearing at a bottom location of a contact via.
摘要翻译：公开了一种容器电容器结构及其构造方法。蚀刻掩模和蚀刻用于暴露容器电容器结构的电极（“底部电极”）的外部表面的部分。蚀刻在容器电容器结构的近端对之间提供凹部，该凹槽可用于形成额外的电容。因此，电容器电介质和顶电极分别形成在第一电极的外表面的内表面和部分上并相邻。有利地，仅使用内表面增加了第一电极和第二电极两者共同的表面积，这提供了额外的电容，而不会减小用于清除电容器电介质的部分和第二电极远离接触孔位置的间隔。此外，与在接触通孔的底部位置处的清除相反，电容器电介质和第二电极部分的这种清除可以在衬底组件的上部位置进行。

10. 发明授权

US07160785B1 Container capacitor structure and method of formation thereof 失效
标题翻译：集装箱电容器结构及其形成方法
公开(公告)号：US07160785B1
公开(公告)日：2007-01-09
申请号：US09652999
申请日：2000-08-31
申请人： D. Mark Durcan , Trung T. Doan , Roger R. Lee , Fernando Gonzalez
发明人： D. Mark Durcan , Trung T. Doan , Roger R. Lee , Fernando Gonzalez
IPC分类号： H01L21/20
CPC分类号： H01L28/91 , H01L27/10811 , H01L27/10817 , H01L27/10852 , H01L27/10888 , H01L28/65 , Y10S257/905
摘要： Disclosed is a container capacitor structure and method of constructing it. An etch mask and etch are used to expose portions of an exterior surface of electrode (“bottom electrodes”) of the container capacitor structure. The etch provides a recess between proximal pairs of container capacitor structures, which recess is available for forming additional capacitance. Accordingly, a capacitor dielectric and a top electrode are formed on and adjacent to, respectively, both an interior surface and portions of the exterior surface of the first electrode. Advantageously, surface area common to both the first electrode and second electrodes is increased over using only the interior surface, which provides additional capacitance without a decrease in spacing for clearing portions of the capacitor dielectric and the second electrode away from a contact hole location. Furthermore, such clearing of the capacitor dielectric and the second electrode portions may be done at an upper location of a substrate assembly in contrast to clearing at a bottom location of a contact via.
摘要翻译：公开了一种容器电容器结构及其构造方法。蚀刻掩模和蚀刻用于暴露容器电容器结构的电极（“底部电极”）的外部表面的部分。蚀刻在容器电容器结构的近端对之间提供凹槽，该凹槽可用于形成额外的电容。因此，电容器电介质和顶电极分别形成在第一电极的外表面的内表面和部分上并相邻。有利地，仅使用内表面增加了第一电极和第二电极两者共同的表面积，这提供了额外的电容，而不会减小用于清除电容器电介质部分和第二电极远离接触孔位置的间隔。此外，与在接触通孔的底部位置处的清除相反，电容器电介质和第二电极部分的这种清除可以在衬底组件的上部位置进行。

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