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1. 发明申请

US20050127518A1 Electroplated CoWP composite structures as copper barrier layers 有权
公开(公告)号：US20050127518A1
公开(公告)日：2005-06-16
申请号：US11047652
申请日：2005-02-02
申请人： Cyril Cabral , Stefanie Chiras , Emanuel Cooper , Hariklia Deligianni , Andrew Kellock , Judith Rubino , Roger Tsai
发明人： Cyril Cabral , Stefanie Chiras , Emanuel Cooper , Hariklia Deligianni , Andrew Kellock , Judith Rubino , Roger Tsai
IPC分类号： B32B15/04 , C25D3/56 , C25D9/08 , H01L21/288 , H01L21/44 , H01L21/768 , H01L23/48 , H01L23/52 , H01L23/532 , H01L29/40
CPC分类号： H01L21/2885 , C25D9/08 , H01L21/76838 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L21/76877 , H01L23/53238 , H01L2224/05007
摘要： A composite material comprising a layer containing copper, and an electrodeposited CoWP film on the copper layer. The CoWP film contains from 11 atom percent to 25 atom percent phosphorus and has a thickness from 5 nm to 200 nm. The invention is also directed to a method of making an interconnect structure comprising: providing a trench or via within a dielectric material, and a conducting metal containing copper within the trench or the via; and forming a CoWP film by electrodeposition on the copper layer. The CoWP film contains from 10 atom percent to 25 atom percent phosphorus and has a thickness from 5 nm to 200 nm. The invention is also directed to a interconnect structure comprising a dielectric layer in contact with a metal layer; an electrodeposited CoWP film on the metal layer, and a copper layer on the CoWP film.

2. 发明申请

US20050104216A1 Electroplated CoWP composite structures as copper barrier layers 有权
标题翻译：电镀CoWP复合结构作为铜阻挡层
公开(公告)号：US20050104216A1
公开(公告)日：2005-05-19
申请号：US10714966
申请日：2003-11-18
申请人： Cyril Cabral , Stefanie Chiras , Emanuel Cooper , Hariklia Deligianni , Andrew Kellock , Judith Rubino , Roger Tsai
发明人： Cyril Cabral , Stefanie Chiras , Emanuel Cooper , Hariklia Deligianni , Andrew Kellock , Judith Rubino , Roger Tsai
IPC分类号： B32B15/04 , C25D3/56 , C25D9/08 , H01L21/288 , H01L21/44 , H01L21/768 , H01L23/48 , H01L23/52 , H01L23/532 , H01L29/40
CPC分类号： H01L21/2885 , C25D9/08 , H01L21/76838 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L21/76877 , H01L23/53238 , H01L2224/05007
摘要： A composite material comprising a layer containing copper, and an electrodeposited CoWP film on the copper layer. The CoWP film contains from 11 atom percent to 25 atom percent phosphorus and has a thickness from 5 nm to 200 nm. The invention is also directed to a method of making an interconnect structure comprising: providing a trench or via within a dielectric material, and a conducting metal containing copper within the trench or the via; and forming a CoWP film by electrodeposition on the copper layer. The CoWP film contains from 10 atom percent to 25 atom percent phosphorus and has a thickness from 5 nm to 200 nm. The invention is also directed to a interconnect structure comprising a dielectric layer in contact with a metal layer; an electrodeposited CoWP film on the metal layer, and a copper layer on the CoWP film.
摘要翻译：一种复合材料，其包含含有铜的层和在铜层上的电沉积CoWP膜。 CoWP膜含有11原子％至25原子％的磷并具有5nm至200nm的厚度。本发明还涉及一种制造互连结构的方法，包括：在介电材料内提供沟槽或通孔，以及在沟槽或通孔内容纳铜的导电金属; 并通过电沉积在铜层上形成CoWP膜。 CoWP膜含有10原子％至25原子％的磷，并且具有5nm至200nm的厚度。本发明还涉及包括与金属层接触的电介质层的互连结构; 金属层上的电沉积CoWP膜，CoWP膜上的铜层。

3. 发明授权

US07364444B2 Shuttered electrical connector socket 有权
标题翻译：封闭电气连接器插座
公开(公告)号：US07364444B2
公开(公告)日：2008-04-29
申请号：US10571541
申请日：2004-09-10
申请人： Andrew Kellock , Quentin David Cook
发明人： Andrew Kellock , Quentin David Cook
IPC分类号： H01R13/44
CPC分类号： H01R13/4536 , H01R24/64
摘要： A shuttered electrical connector for receiving an electrical plug, the plug having a hinged tail for lockingly engaging with the connector, is disclosed. The connector includes: a body 20 defining a socket having 22 an open mouth 24; a central shutter 30 hingedly mounted to the body 20 adjacent the open mouth 24 for rotation about a first hinge axis 32; and a pair of spaced apart side shutters 40 & 50 hingedly mounted to the body 20 adjacent the open mouth 24 for rotation about a second hinge axis 42, the second hinge axis 42 parallel to and spaced apart from the first hinge axis 32. The shutters are rotatable through approximately 90 degrees from: a closed position in which together they cover the open mouth 24 while presenting a substantially flat outer face, to an open position receiving the plug in which the central shutter is offset from the side shutters.
摘要翻译：公开了一种用于接收电插头的闭合电连接器，该插头具有用于与连接器锁定接合的铰接尾部。连接器包括：主体20，其限定具有开口24的插座22; 中央快门30，其铰接地安装到邻近开口24的主体20上，以围绕第一铰链轴线32旋转; 以及一对间隔开的侧面快门40和50，其铰接地安装到邻近开口24的本体20上，用于围绕第二铰链轴线42旋转，第二铰链轴线42平行于第一铰链轴线32并与第一铰链轴线32间隔开。百叶窗可以从关闭位置旋转大约90度，在该关闭位置中，它们一起覆盖开口24，同时呈现基本上平坦的外表面，到达接收塞子的打开位置，中央快门偏离侧挡板。

4. 外观设计

USD651090S1 Bottle 有权
公开(公告)号：USD651090S1
公开(公告)日：2011-12-27
申请号：US29385543
申请日：2011-02-15
申请人： Michael Grima , Troy Nyssen , Andrew Kellock
设计人： Michael Grima , Troy Nyssen , Andrew Kellock

5. 发明申请

US20070037421A1 Shuttered electrical connector socket 有权
标题翻译：封闭电气连接器插座
公开(公告)号：US20070037421A1
公开(公告)日：2007-02-15
申请号：US10571541
申请日：2004-09-10
申请人： Andrew Kellock , Quentin Cook
发明人： Andrew Kellock , Quentin Cook
IPC分类号： H01R13/44
CPC分类号： H01R13/4536 , H01R24/64
摘要： A shuttered electrical connector for receiving an electrical plug, the plug having a hinged tail for lockingly engaging with the connector, is disclosed. The connector includes: a body 20 defining a socket having 22 an open mouth 24; a central shutter 30 hingedly mounted to the body 20 adjacent the open mouth 24 for rotation about a first hinge axis 32; and a pair of spaced apart side shutters 40 & 50 hingedly mounted to the body 20 adjacent the open mouth 24 for rotation about a second hinge axis 42, the second hinge axis 42 parallel to and spaced apart from the first hinge axis 32. The shutters are rotatable through approximately 90 degrees from: a closed position in which together they cover the open mouth 24 while presenting a substantially flat outer face, to an open position receiving the plug in which the central shutter is offset from the side shutters.
摘要翻译：公开了一种用于接收电插头的闭合电连接器，该插头具有用于与连接器锁定接合的铰接尾部。连接器包括：主体20，其限定具有开口24的插座22; 中央快门30，其铰接地安装到邻近开口24的主体20上，以围绕第一铰链轴线32旋转; 以及一对间隔开的侧面快门40和50，其铰接地安装到邻近开口24的本体20上，用于围绕第二铰链轴线42旋转，第二铰链轴线42平行于第一铰链轴线32并与第一铰链轴线32间隔开。可以从闭合位置旋转大约90度，在该关闭位置中，它们一起覆盖开口24，同时呈现基本上平坦的外表面，到达接收塞子的打开位置，中央快门偏离侧挡板。

6. 发明申请

US20050095443A1 Plasma enhanced ALD of tantalum nitride and bilayer 有权
标题翻译：氮化钽和双层的等离子体增强ALD
公开(公告)号：US20050095443A1
公开(公告)日：2005-05-05
申请号：US10699226
申请日：2003-10-31
申请人： Hyungjun Kim , Andrew Kellock , Stephen Rossnagel
发明人： Hyungjun Kim , Andrew Kellock , Stephen Rossnagel
IPC分类号： C23C16/50 , B32B9/00 , C23C16/08 , C23C16/34 , C23C16/46 , C23C28/00 , H01L21/205 , H01L21/28 , H01L21/283 , H01L21/285 , H01L21/314 , H01L21/768 , H01L23/52
CPC分类号： C23C16/45542 , C23C16/34 , C23C16/45525 , H01L21/28562 , H01L21/76843
摘要： A method to deposit TaN by plasma enhanced layer with various nitrogen content. Using a mixture of hydrogen and nitrogen plasma, the nitrogen content in the film can be controlled from 0 to N/Ta=1.7. By turning off the nitrogen flow during deposition of TaN, a TaN/Ta bilayer is easily grown, which has copper diffusion barrier properties superior to those of a single Ta layer or a single TaN layer.
摘要翻译：一种用各种氮含量的等离子体增强层沉积TaN的方法。使用氢和氮等离子体的混合物，膜中的氮含量可以从0到N / Ta = 1.7。通过在TaN沉积期间关闭氮气流，容易生长TaN / Ta双层，其具有优于单个Ta层或单个TaN层的铜扩散阻挡性能。

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