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1. 发明授权

US06274981B1 Low-pressure mercury vapor discharge lamp with electrode shield 失效
标题翻译：低压汞蒸汽放电灯带电极屏蔽
公开(公告)号：US06274981B1
公开(公告)日：2001-08-14
申请号：US09304554
申请日：1999-05-04
申请人： Cornelis R. Ronda , Cornelis J. M. Denissen , Volker U. Weiler , Wilhelm A. Groen , Wilhelmus M. P. Van Kemenade , Bennie J. De Maagt
发明人： Cornelis R. Ronda , Cornelis J. M. Denissen , Volker U. Weiler , Wilhelm A. Groen , Wilhelmus M. P. Van Kemenade , Bennie J. De Maagt
IPC分类号： H01J6110
CPC分类号： H01J61/0672
摘要： A low-pressure mercury vapor discharge lamp is provided with a discharge vessel and a first and a second end portion (12a). The discharge vessel encloses a discharge space provided with a filling of mercury and a rare gas in a gastight manner. Each end portion (12a) supports an electrode (20a) arranged in the discharge space. An electrode shield (22a) encompasses the electrodes (20a) and is covered with a material which reacts with or forms an alloy with alkaline earth metals, which material is released by the electrode (20a).
摘要翻译：低压水银蒸汽放电灯具有放电容器和第一和第二端部（12a）。放电容器以气密的方式包围设置有汞和稀有气体填充物的放电空间。每个端部（12a）支撑布置在放电空间中的电极（20a）。电极屏蔽（22a）包围电极（20a）并用与碱土金属反应或与碱土金属形成合金的材料覆盖，该材料由电极（20a）释放。

2. 发明授权

US5976421A Indium-containing, oxide-ceramic thermistor 失效
标题翻译：含铟氧化物陶瓷热敏电阻
公开(公告)号：US5976421A
公开(公告)日：1999-11-02
申请号：US863349
申请日：1997-05-29
申请人： Wilhelm A. Groen
发明人： Wilhelm A. Groen
IPC分类号： C04B35/00 , C01G53/00 , H01C7/04 , H01B1/08
CPC分类号： H01C7/043
摘要： A thermistor comprising a semiconductor ceramic with an oxide spinel, which contains the elements maganese, nickel and indium. Thermistors of said composition are thermally stable and are characterized by a high resistivity and a high B-value.
摘要翻译：包括具有氧化物尖晶石的半导体陶瓷的热敏电阻，其包含元素，镍和铟。所述组合物的热敏电阻是热稳定的，其特征在于高电阻率和高B值。

3. 发明授权

US06515572B2 Circuit arrangement comprising an SMD-component, in particular a temperature sensor, and a method of manufacturing a temperature sensor 失效
标题翻译：包括SMD元件，特别是温度传感器的电路装置以及制造温度传感器的方法
公开(公告)号：US06515572B2
公开(公告)日：2003-02-04
申请号：US09139201
申请日：1998-08-24
申请人： Wilhelm A. Groen , Valerie R. C. M. J. Sillen
发明人： Wilhelm A. Groen , Valerie R. C. M. J. Sillen
IPC分类号： H01C710
CPC分类号： H01C1/142 , G01K7/22 , H01C7/043 , H01L2924/0002 , H05K3/321 , H05K2201/0209 , H05K2201/10636 , H05K2201/10984 , H05K2203/1453 , Y02P70/611 , Y10T29/49082 , H01L2924/00
摘要： The invention relates to a circuit arrangement comprising an SMD-component (1), in particular a temperature sensor with a thermistor element (1), having two electroconductive contacts (2a, 2b), which are each conductively connected to a conductor track (3a, 3b) provided on a substrate (4). A firm, mechanical connection as well as a good electroconductive connection between the SMD-component and the conductor tracks is achieved in that the contacts (2a, 2b) are each made of a metal-glass layer (6) forming the connection to the conductor tracks (3a, 3b), and in that the metal-glass layer (6) is manufactured by heating a glass particle-containing metal until melting or softening of the glass particles occurs. The invention also relates to a method of manufacturing a temperature sensor and to a method of manufacturing such a connection.
摘要翻译：本发明涉及一种电路装置，其包括SMD组件（1），特别是具有热敏电阻元件（1）的温度传感器，具有两个导电触点（2a，2b），每个导电触点导电地连接到导体轨道，3b）设置在基板（4）上。实现了SMD组件和导体轨道之间的牢固的机械连接以及良好的导电连接，其中触点（2a，2b）各自由形成与导体的连接的金属玻璃层（6）制成轨道（3a，3b），并且金属玻璃层（6）通过加热含玻璃颗粒的金属直到发生玻璃颗粒的熔化或软化来制造。本发明还涉及制造温度传感器的方法和制造这种连接的方法。

4. 发明授权

US06201291B1 Semiconductor device and method of manufacturing such a device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06201291B1
公开(公告)日：2001-03-13
申请号：US09209063
申请日：1998-12-10
申请人： Srdjan Kordic , Cornelis A. H. A. Mutsaers , Mareike K. Klee , Wilhelm A. Groen
发明人： Srdjan Kordic , Cornelis A. H. A. Mutsaers , Mareike K. Klee , Wilhelm A. Groen
IPC分类号： H01L2900
CPC分类号： H01L21/28537 , H01L21/76801 , H01L21/76829 , H01L23/485 , H01L23/5329 , H01L23/53295 , H01L29/452 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A semiconductor device, for example an IC, having conductor tracks (3) of a metal (3) exhibiting a better conductance than aluminium, such as copper, silver, gold or an alloy thereof. The tracks are situated on an insulating layer (2) and are connected to a semiconductor region (1A) or to an aluminium conductor track by means of a metal plug (5), for example of tungsten, which is situated in an aperture (4) in the insulating layer (2). The bottom and walls of the aperture (4) are provided with an electroconductive material (6), such as titanium nitride, which forms a diffusion barrier for the metal (3). In accordance with the invention, the insulating layer (2) comprises a sub-layer (2A), which forms a diffusion barrier for the metal (3) and which extends, outside the aperture (4), throughout the surface of the semiconductor body (10). As a result, the conductor tracks (3) no longer have to be provided with a sheath serving as a diffusion barrier for the metal (3). The conductor tracks (3) may thus have a cross-section of very small dimensions, while the electric resistance will is still be sufficiently low. The same applies for any further conductor tracks (8), which may be present above the conductor tracks (3) and which are electrically insulated therefrom. Preferably, the electrically insulating sub-layer (2A) is situated approximately in the middle of the insulating layer (2). By virtue thereof, the contribution of the sub-layer (2A) to capacitances threatening the velocity of the IC is minimized. Suitable materials for the sub-layer (2A) are oxides, nitrides, fluorides and carbides, for example aluminium oxide, magnesium fluoride or silicon carbide. The insulating layers (2, 7, 11, 12) preferably comprise silicon dioxide.
摘要翻译：具有导体轨迹（3）的半导体器件，例如具有比铝更好的导电性的金属（3）的导体轨迹（3），例如铜，银，金或其合金。轨道位于绝缘层（2）上，并且通过位于孔（4）中的金属插塞（5）（例如钨）连接到半导体区域（1A）或铝导体轨道）在绝缘层（2）中。开口（4）的底部和壁上设置有形成用于金属（3）的扩散阻挡层的导电材料（6），例如氮化钛。根据本发明，绝缘层（2）包括形成用于金属（3）的扩散阻挡层并且在孔（4）的外部延伸穿过半导体本体的表面的子层（2A）（10）。结果，导体轨迹（3）不再需要设置有用作金属（3）的扩散阻挡层的护套。因此，导体轨迹（3）可以具有非常小尺寸的横截面，而电阻仍然足够低。同样适用于可能存在于导体轨道（3）上方并且与其电绝缘的任何另外的导体轨道（8）。优选地，电绝缘子层（2A）大致位于绝缘层（2）的中间。由此，子层（2A）对威胁IC速度的电容的贡献被最小化。用于子层（2A）的合适材料是氧化物，氮化物，氟化物和碳化物，例如氧化铝，氟化镁或碳化硅。绝缘层（2,7,11,12）优选包含二氧化硅。

5. 发明授权

US06337790B1 Thin-film capacitor 失效
标题翻译：薄膜电容器
公开(公告)号：US06337790B1
公开(公告)日：2002-01-08
申请号：US09385279
申请日：1999-08-30
申请人： Antonius J. M. Nellissen , Paul Van Oppen , Hans P. Lobl , Mareike K. Klee , Wilhelm A. Groen , Nicolaas J. A. Van Veen
发明人： Antonius J. M. Nellissen , Paul Van Oppen , Hans P. Lobl , Mareike K. Klee , Wilhelm A. Groen , Nicolaas J. A. Van Veen
IPC分类号： H01G4228
CPC分类号： H01G2/20 , H01G2/14
摘要： The present invention provides a new type of thin-film capacitor which is insensitive to breakdown voltages during its mounting on a printed circuit board. Said capacitor has an insulating substrate having at least two internal electrode layers which are mutually separated by means of a dielectric layer. The substrate also has two end contacts each of which are electroconductively connected to one of said internal electrode layers. According to the invention, the capacitor also has breakable electrically conductive means, preferably formed as a metal layer, which means are electrically connected to said end contacts. The presence of said breakable electrically conductive means between said end contacts prevents damage due to electrical storage which can arise during the mounting of the capacitor on a printed circuit board.
摘要翻译：本发明提供了一种新型薄膜电容器，其在其安装在印刷电路板上时对击穿电压不敏感。所述电容器具有绝缘基板，该绝缘基板具有至少两个通过介电层相互分离的内部电极层。基板还具有两个端部触头，每个触头都与所述内部电极层中的一个导电连接。根据本发明，电容器还具有可破坏的导电装置，优选地形成为金属层，该装置电连接到所述端触点。在所述端部触点之间存在所述可破坏的导电装置可以防止由于在将电容器安装在印刷电路板上时可能引起的电存储的损坏。

6. 发明授权

US5411924A Ceramic body 失效
标题翻译：陶瓷体
公开(公告)号：US5411924A
公开(公告)日：1995-05-02
申请号：US196938
申请日：1994-02-15
申请人： Wilhelm A. Groen , Marcellinus J. Kraan , Gijsbertus De With
发明人： Wilhelm A. Groen , Marcellinus J. Kraan , Gijsbertus De With
IPC分类号： C04B35/58 , C04B35/584 , C04B35/593 , C04B35/597 , H01L23/15 , H01L23/373
CPC分类号： C04B35/645 , C04B35/58 , C04B35/58085 , C04B35/584 , C04B35/593 , C04B35/597 , H01L23/15 , H01L23/3731 , H01L2924/0002
摘要： The invention provides a ceramic body and a method of manufacturing such a body. The body is characterized by its composition, which comprises 20-30 at. % of magnesium, 20-30 at. % of silicon, 40-60 at. % of nitrogen and maximally 15 at. % of oxygen. A preferred composition corresponds to the formula MgSiN.sub.2-x O.sub.x, where x is smaller than 0.5. The manufacture of the ceramic body in accordance with the invention is simpler and cheaper than that of aluminium nitride, and a number of properties of said ceramic material are better than those of the known aluminium oxide.
摘要翻译：本发明提供一种陶瓷体及其制造方法。身体的特征在于其组成，其中包括20-30 at。％的镁，20-30在。硅的百分比，40-60 at。氮的百分比和最大15 at。％的氧气。优选的组成对应于式MgSiN 2-x O x，其中x小于0.5。根据本发明的陶瓷体的制造比氮化铝的制造更简单和便宜，并且所述陶瓷材料的许多性能优于已知的氧化铝。

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