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    • 4. 发明申请
    • BACK SIDE WAFER DICING
    • 后面倒角
    • US20090155935A1
    • 2009-06-18
    • US12389686
    • 2009-02-20
    • Richard S. HarrisHo W. Lo
    • Richard S. HarrisHo W. Lo
    • H01L21/02
    • H01L21/78B23K26/04B23K26/40B23K2103/50B28D5/0011H01L21/67092
    • Systems and methods for scribing a semiconductor wafer with reduced or no damage or debris to or on individual integrated circuits caused by the scribing process. The semiconductor wafer is scribed from a back side thereof. In one embodiment, the back side of the wafer is scribed following a back side grinding process but prior to removal of back side grinding tape. Thus, debris generated from the scribing process is prevented from being deposited on a top surface of the wafer. To determine the location of dicing lanes or streets relative to the back side of the wafer, the top side of the wafer is illuminated with a light configured to pass through the grinding tape and the wafer. The light is detected from the back side of the wafer, and the streets are mapped relative to the back side. The back side of the wafer is then cut with a saw or laser.
    • 用于划片半导体晶片的系统和方法,其具有减少或不损坏或碎片到由划线过程引起的单个集成电路上或之上。 半导体晶片从其后侧划线。 在一个实施例中,在背面研磨过程之后但在去除背面研磨带之前,对晶片的背面进行划线。 因此,防止从划线工艺产生的碎屑沉积在晶片的顶表面上。 为了确定相对于晶片背面的切割车道或街道的位置,用构造成穿过研磨带和晶片的光来照射晶片的顶侧。 从晶片的背面检测光,并且相对于背面映射街道。 然后用锯或激光切割晶片的背面。
    • 5. 发明授权
    • Back side wafer dicing
    • 背面晶圆切片
    • US07494900B2
    • 2009-02-24
    • US11441453
    • 2006-05-25
    • Richard S. HarrisHo W. Lo
    • Richard S. HarrisHo W. Lo
    • H01L21/00
    • H01L21/78B23K26/04B23K26/40B23K2103/50B28D5/0011H01L21/67092
    • Systems and methods for scribing a semiconductor wafer with reduced or no damage or debris to or on individual integrated circuits caused by the scribing process. The semiconductor wafer is scribed from a back side thereof. In one embodiment, the back side of the wafer is scribed following a back side grinding process but prior to removal of back side grinding tape. Thus, debris generated from the scribing process is prevented from being deposited on a top surface of the wafer. To determine the location of dicing lanes or streets relative to the back side of the wafer, the top side of the wafer is illuminated with a light configured to pass through the grinding tape and the wafer. The light is detected from the back side of the wafer, and the streets are mapped relative to the back side. The back side of the wafer is then cut with a saw or laser.
    • 用于划片半导体晶片的系统和方法,其具有减少或不损坏或碎片到由划线过程引起的单个集成电路上或之上。 半导体晶片从其后侧划线。 在一个实施例中,在背面研磨过程之后但在去除背面研磨带之前,对晶片的背面进行划线。 因此,防止从划线工艺产生的碎屑沉积在晶片的顶表面上。 为了确定相对于晶片背面的切割车道或街道的位置,用构造成穿过研磨带和晶片的光来照射晶片的顶侧。 从晶片的背面检测光,并且相对于背面映射街道。 然后用锯或激光切割晶片的背面。
    • 6. 发明申请
    • Back side wafer dicing
    • 背面晶圆切片
    • US20070275541A1
    • 2007-11-29
    • US11441453
    • 2006-05-25
    • Richard S. HarrisHo W. Lo
    • Richard S. HarrisHo W. Lo
    • H01L21/00
    • H01L21/78B23K26/04B23K26/40B23K2103/50B28D5/0011H01L21/67092
    • Systems and methods for scribing a semiconductor wafer with reduced or no damage or debris to or on individual integrated circuits caused by the scribing process. The semiconductor wafer is scribed from a back side thereof. In one embodiment, the back side of the wafer is scribed following a back side grinding process but prior to removal of back side grinding tape. Thus, debris generated from the scribing process is prevented from being deposited on a top surface of the wafer. To determine the location of dicing lanes or streets relative to the back side of the wafer, the top side of the wafer is illuminated with a light configured to pass through the grinding tape and the wafer. The light is detected from the back side of the wafer, and the streets are mapped relative to the back side. The back side of the wafer is then cut with a saw or laser.
    • 用于划片半导体晶片的系统和方法,其具有减少或不损坏或碎片到由划线过程引起的单个集成电路上或之上。 半导体晶片从其后侧划线。 在一个实施例中,在背面研磨过程之后但在去除背面研磨带之前,对晶片的背面进行划线。 因此,防止从划线工艺产生的碎屑沉积在晶片的顶表面上。 为了确定相对于晶片背面的切割车道或街道的位置,用构造成穿过研磨带和晶片的光来照射晶片的顶侧。 从晶片的背面检测光,并且相对于背面映射街道。 然后用锯或激光切割晶片的背面。
    • 7. 发明授权
    • Dual wavelength polarization selective holographic optical element
    • 双波长偏振选择全息光学元件
    • US4993789A
    • 1991-02-19
    • US244923
    • 1988-09-15
    • Jonathan R. BilesHo W. Lo
    • Jonathan R. BilesHo W. Lo
    • G02B5/32G02B27/28
    • G02B27/283G02B5/32
    • A polarization-selective holographic element having first and second holographic layers, each holographic layer including holograms comprising a plurality of fringes which are recorded with light having a first wavelength .lambda..sub.1. The holographic optical element transmits a first component of light having a second wavelength .lambda..sub.2 without diffraction and diffracts a second component of the light having the second wavelength by a selected angle. The holograms have a high diffraction efficiency and are recorded with beams making angles .sigma..sub.1 and .sigma..sub.2 with a normal to the surface of the holographic layers, where .vertline..theta..sub.2 -.theta..sub.1 .vertline.=.vertline..sigma..sub.2 -.sigma..sub.1 .vertline.=2.alpha., .lambda..sub.2 /(sin.theta..sub.1 +sin.theta..sub.2)=.lambda..sub.1 /(sin.theta..sub.1 +sin.theta..sub.2), and .theta..sub.1 and .theta..sub.2 are the incident and diffracted angles of the second component of the light having the second wavelength.
    • 一种具有第一和第二全息层的偏振选择性全息元件,每个全息图层包括全息图,该全息图包括以第一波长λ1的光记录的多个条纹。全息光学元件透射具有第二波长λ的光的第一分量 2,而不衍射,并将具有第二波长的光的第二分量衍射成选定的角度。 全息图具有高的衍射效率,并用与全息层的表面垂直的光束制作角度σ1和σ2进行记录,其中|θ2θ1 | = | sigma 2-sigma 1 | =2α, λ2 /(sinθ1 +sinθ2)=λ1 /(sinθ1 +sinθ2),θ1和θ2是具有第二波长的光的第二分量的入射角和衍射角。