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1. 发明授权

US5798542A Image sensor having ITO electrodes with overlapping color filters for increased sensitivity 失效
标题翻译：图像传感器具有具有重叠滤色片的ITO电极，以提高灵敏度
公开(公告)号：US5798542A
公开(公告)日：1998-08-25
申请号：US731036
申请日：1996-10-08
申请人： Constantine N. Anagnostopoulos , Stephen Lawrence Kosman , Win-chyi Chang
发明人： Constantine N. Anagnostopoulos , Stephen Lawrence Kosman , Win-chyi Chang
IPC分类号： H01L27/148 , H01L31/0224 , H01L31/062 , H01L31/113
CPC分类号： H01L31/022466 , H01L27/14812
摘要： By designing pixels with highly transparent ITO electrodes and asymmetric gates such that as much light as possible falls upon a region covered by an ITO electrode, light sensitivity is increased. Impurity diffusion from the ITO electrode into the silicon below is prevented by employing an Oxide/Nitride/Oxide stack as a dielectric. Employing at least some polysilicon electrodes with ITO electrodes is desirable to allow entrance passages through which hydrogen passivation can be accomplished. The pixel architecture can be designed to increase sensitivity further by other design choices. The first of these choices is to incorporate a lenslet on each pixel such that as much as possible of the light falling on the pixel is made to pass through the portion of the pixel covered with ITO. The second method is for color CCD sensors with color filter patterns, such as the "BAYER" color filter pattern to name just one, to have the overlap of the color filters, which does not allow light transmission, to occur over the less sensitive area of the pixel, which is the area covered with the polysilicon electrode. For proper operation a slight modification of the vertical clock timing is needed.
摘要翻译：通过设计具有高度透明的ITO电极和非对称栅极的像素，使得尽可能多的光落在由ITO电极覆盖的区域上，光敏度增加。通过使用氧化物/氮化物/氧化物层作为电介质来防止从ITO电极向下面的硅的杂质扩散。使用具有ITO电极的至少一些多晶硅电极是期望的，以允许可以实现氢钝化的入口通道。像素架构可以通过其他设计选择进一步提高灵敏度。这些选择中的第一个是在每个像素上并入一个小透镜，使得落在像素上的光尽可能地穿过被ITO覆盖的像素的部分。第二种方法是用于具有彩色滤光片图案的彩色CCD传感器，例如“BAYER”彩色滤光片图案，其名称仅为一个，以便在较不敏感的区域上发生不允许透光的滤色器的重叠的像素，其是被多晶硅电极覆盖的区域。为了正确操作，需要稍微修改垂直时钟时序。

2. 发明授权

US06001668A Method of fabricating a image sensor having ITO electrodes with overlapping color filters for increased sensitivity 失效
标题翻译：制造具有ITO电极的图像传感器的方法，所述ITO电极具有用于增加灵敏度的重叠滤色器
公开(公告)号：US06001668A
公开(公告)日：1999-12-14
申请号：US997495
申请日：1997-12-23
申请人： Constantine N. Anagnostopoulos , Stephen Lawrence Kosman , Win-chyi Chang
发明人： Constantine N. Anagnostopoulos , Stephen Lawrence Kosman , Win-chyi Chang
IPC分类号： H01L27/148 , H01L31/0224 , H01L21/70
CPC分类号： H01L31/022466 , H01L27/14812
摘要： By incorporating an ITO electrode which is more transparent than polysilicon, and designing the pixel such that it has asymmetric gates with as much as possible of its light sensitive region covered by an ITO electrode, light sensitivity is increased. To solve the problem of impurity diffusion from the ITO electrode into the silicon below, the conventional Silicon Dioxide gate dielectric was replaced with an Oxide/Nitride/Oxide stack. Employing at least some polysilicon electrodes with ITO electrodes is desirable to allow entrance passages through which hydrogen passivation can be accomplished. The pixel architecture can be designed to increase sensitivity further by other design choices. The first of these choices is to incorporate a lenslet on each pixel such that as much as possible of the light falling on the pixel is made to pass through the portion of the pixel covered with ITO. The pixel light sensitivity improves not only because the light passes through the more transparent ITO electrode, but also because some of the light that would have fallen on the LOD region and would be lost, is now collected. The second method is for color CCD sensors with color filter patterns, such as the "BAYER" color filter pattern to name just one, to have the overlap of the color filters, which does not allow light transmission, to occur over the less sensitive area of the pixel, which is the area covered with the polysilicon electrode. For proper operation a slight modification of the vertical clock timing is needed.
摘要翻译：通过结合比多晶硅更透明的ITO电极，并且设计像素使其具有尽可能多的由ITO电极覆盖的光敏区域的非对称栅极，增加了光灵敏度。为了解决从ITO电极到下面的硅的杂质扩散的问题，常规的二氧化硅栅极电介质用氧化物/氮化物/氧化物堆替代。使用具有ITO电极的至少一些多晶硅电极是期望的，以允许可以实现氢钝化的入口通道。像素架构可以通过其他设计选择进一步提高灵敏度。这些选择中的第一个是在每个像素上并入一个小透镜，使得落在像素上的光尽可能地穿过被ITO覆盖的像素的部分。像素光灵敏度不仅改善了光通过更透明的ITO电极，而且还因为一些将落在LOD区域上并将被丢失的光线被收集。第二种方法是用于具有彩色滤光片图案的彩色CCD传感器，例如“BAYER”彩色滤光片图案，其名称仅为一个，以便在较不敏感的区域上发生不允许透光的滤色器的重叠的像素，其是被多晶硅电极覆盖的区域。为了正确操作，需要稍微修改垂直时钟时序。

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