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1. 发明申请

US20080128849A1 Low-noise semiconductor photodetectors 有权
标题翻译：低噪声半导体光电探测器
公开(公告)号：US20080128849A1
公开(公告)日：2008-06-05
申请号：US11978276
申请日：2007-10-29
申请人： Conor S. Rafferty , Clifford A. King
发明人： Conor S. Rafferty , Clifford A. King
IPC分类号： H01L31/0352 , H01L21/331
CPC分类号： H01L31/0352 , H01L27/14649 , H01L31/03529 , H01L31/101 , H01L2924/0002 , Y02E10/50 , H01L2924/00
摘要： A photodetector is formed from a body of semiconductor material substantially surrounded by dielectric surfaces. A passivation process is applied to at least one surface to reduce the rate of carrier generation and recombination on that surface. Photocurrent is read out from at least one electrical contact, which is formed on a doped region whose surface lies entirely on a passivated surface. Unwanted leakage current from un-passivated surfaces is reduced through one of the following methods. (a) The un-passivated surface is separated from the photo-collecting contact by at least two junctions (b) The un-passivated surface is doped to a very high level, at least equal to the conduction band or valence band density of states of the semiconductor (c) An accumulation or inversion layer is formed on the un-passivated surface by the application of an electric field. Electrical contacts are made to all doped regions, and bias is applied so that a reverse bias is maintained across all junctions.
摘要翻译：光电检测器由基本上被电介质表面包围的半导体材料体形成。钝化过程被应用于至少一个表面以降低载体在该表面上的产生和重组的速率。从至少一个电触点读出光电流，该电触点形成在其表面完全位于钝化表面上的掺杂区域上。通过以下方法之一减少未钝化表面的不需要的泄漏电流。（a）未钝化的表面通过至少两个结与光电收集接触分离（b）未钝化的表面被掺杂到非常高的水平，至少等于状态的导带或价带密度的半导体（c）通过施加电场在未钝化的表面上形成堆积或反转层。对所有掺杂区域进行电触点，并且施加偏压，使得跨所有接合部保持反向偏压。

2. 发明授权

US08686365B2 Imaging apparatus and methods 有权
标题翻译：成像设备和方法
公开(公告)号：US08686365B2
公开(公告)日：2014-04-01
申请号：US12510109
申请日：2009-07-27
申请人： Conor S. Rafferty , Anders Ingvar Aberg , Tirunelveli Subramaniam Sriram , Bryan D. Ackland , Clifford A. King
发明人： Conor S. Rafferty , Anders Ingvar Aberg , Tirunelveli Subramaniam Sriram , Bryan D. Ackland , Clifford A. King
IPC分类号： G01J5/02 , H01L31/0232
CPC分类号： H01L27/14627 , G01J3/02 , G01J3/0294 , G01J3/51 , G01J3/513 , H01L27/14621 , H01L27/14629 , H01L27/14632 , H01L27/14636 , H01L27/14647 , H01L27/14685
摘要： Optical imaging structures and methods are disclosed. One structure may be implemented as an imaging pixel having multiple photodetectors. The photodetectors may detect different wavelengths of incident radiation, and may be operated simultaneously or at separate times. An imager may include an imaging array of pixels of the type described. Methods of operating such structures are also described.
摘要翻译：公开了光学成像结构和方法。一个结构可以被实现为具有多个光电检测器的成像像素。光电检测器可以检测入射辐射的不同波长，并且可以同时或在不同的时间运行。成像器可以包括所述类型的像素的成像阵列。还描述了操作这种结构的方法。

3. 发明申请

US20100019154A1 IMAGING APPARATUS AND METHODS 有权
标题翻译：成像装置和方法
公开(公告)号：US20100019154A1
公开(公告)日：2010-01-28
申请号：US12510109
申请日：2009-07-27
申请人： Conor S. Rafferty , Anders Ingvar Aberg , Tirunelveli Subramaniam Sriram , Bryan D. Ackland , Clifford A. King
发明人： Conor S. Rafferty , Anders Ingvar Aberg , Tirunelveli Subramaniam Sriram , Bryan D. Ackland , Clifford A. King
IPC分类号： G01J5/02 , H01L31/0232 , H01L31/028
CPC分类号： H01L27/14627 , G01J3/02 , G01J3/0294 , G01J3/51 , G01J3/513 , H01L27/14621 , H01L27/14629 , H01L27/14632 , H01L27/14636 , H01L27/14647 , H01L27/14685
摘要： Optical imaging structures and methods are disclosed. One structure may be implemented as an imaging pixel having multiple photodetectors. The photodetectors may detect different wavelengths of incident radiation, and may be operated simultaneously or at separate times. An imager may include an imaging array of pixels of the type described. Methods of operating such structures are also described.
摘要翻译：公开了光学成像结构和方法。一个结构可以被实现为具有多个光电检测器的成像像素。光电检测器可以检测入射辐射的不同波长，并且可以同时或在不同的时间运行。成像器可以包括所述类型的像素的成像阵列。还描述了操作这种结构的方法。

4. 发明授权

US08766393B2 Low-noise semiconductor photodetectors 有权
标题翻译：低噪声半导体光电探测器
公开(公告)号：US08766393B2
公开(公告)日：2014-07-01
申请号：US13230715
申请日：2011-09-12
申请人： Conor S. Rafferty , Clifford A. King
发明人： Conor S. Rafferty , Clifford A. King
IPC分类号： H01L31/00 , H01L31/06 , H01L31/102
CPC分类号： H01L31/0352 , H01L27/14649 , H01L31/03529 , H01L31/101 , H01L2924/0002 , Y02E10/50 , H01L2924/00
摘要： A photodetector is formed from a body of semiconductor material substantially surrounded by dielectric surfaces. A passivation process is applied to at least one surface to reduce the rate of carrier generation and recombination on that surface. Photocurrent is read out from at least one electrical contact, which is formed on a doped region whose surface lies entirely on a passivated surface. Unwanted leakage current from un-passivated surfaces is reduced through one of the following methods: (a) The un-passivated surface is separated from the photo-collecting contact by at least two junctions; (b) The un-passivated surface is doped to a very high level, at least equal to the conduction band or valence band density of states of the semiconductor; (c) An accumulation or inversion layer is formed on the un-passivated surface by the application of an electric field.
摘要翻译：光电检测器由基本上被电介质表面包围的半导体材料体形成。钝化过程被应用于至少一个表面以降低载体在该表面上的产生和重组的速率。从至少一个电触点读出光电流，该电触点形成在其表面完全位于钝化表面上的掺杂区域上。通过以下方法之一减少未钝化表面的不需要的泄漏电流：（a）未钝化的表面通过至少两个接头与光电收集触点分离; （b）未钝化的表面被掺杂到非常高的水平，至少等于半导体状态的导带或价带密度; （c）通过施加电场在未钝化的表面上形成堆积或反转层。

5. 发明授权

US08294100B2 Imaging apparatus and methods 有权
标题翻译：成像设备和方法
公开(公告)号：US08294100B2
公开(公告)日：2012-10-23
申请号：US13299712
申请日：2011-11-18
申请人： Conor S. Rafferty , Anders Ingvar Aberg , Tirunelveli Subramaniam Sriram , Bryan D. Ackland , Clifford A. King
发明人： Conor S. Rafferty , Anders Ingvar Aberg , Tirunelveli Subramaniam Sriram , Bryan D. Ackland , Clifford A. King
IPC分类号： H01L25/00
CPC分类号： H01L27/14649 , H01L27/14625
摘要： Imagers, pixels, and methods of using the same are disclosed for imaging in various spectra, such as visible, near infrared (IR), and short wavelength IR (SWIR). The imager may have an imaging array having pixels of different types. The different types of pixels may detect different ranges of wavelengths in the IR, or the SWIR, spectra. The pixels may include a filter which blocks some wavelengths of radiation in the IR spectrum while passing other wavelengths. The filter may be formed of a semiconductor material, and therefore may be easily integrated with a CMOS pixel using conventional CMOS processing techniques.
摘要翻译：公开了使用它们的成像器，像素和方法用于在诸如可见光，近红外（IR）和短波长IR（SWIR）的各种光谱中成像。成像器可以具有具有不同类型的像素的成像阵列。不同类型的像素可以检测IR或SWIR光谱中的不同波长范围。像素可以包括滤光器，其在通过其它波长的同时阻挡IR光谱中的一些波长的辐射。滤波器可以由半导体材料形成，因此可以使用传统的CMOS处理技术容易地与CMOS像素集成。

6. 发明授权

US08084739B2 Imaging apparatus and methods 有权
标题翻译：成像设备和方法
公开(公告)号：US08084739B2
公开(公告)日：2011-12-27
申请号：US12504005
申请日：2009-07-16
申请人： Conor S. Rafferty , Anders Ingvar Aberg , Tirunelveli Subramaniam Sriram , Bryan D. Ackland , Clifford A. King
发明人： Conor S. Rafferty , Anders Ingvar Aberg , Tirunelveli Subramaniam Sriram , Bryan D. Ackland , Clifford A. King
IPC分类号： H01L25/00
CPC分类号： H01L27/14649 , H01L27/14625
摘要： Imagers, pixels, and methods of using the same are disclosed for imaging in various spectra, such as visible, near infrared (IR), and short wavelength IR (SWIR). The imager may have an imaging array having pixels of different types. The different types of pixels may detect different ranges of wavelengths in the IR, or the SWIR, spectra. The pixels may include a filter which blocks some wavelengths of radiation in the IR spectrum while passing other wavelengths. The filter may be formed of a semiconductor material, and therefore may be easily integrated with a CMOS pixel using conventional CMOS processing techniques.
摘要翻译：公开了使用它们的成像器，像素和方法用于在诸如可见光，近红外（IR）和短波长IR（SWIR）的各种光谱中成像。成像器可以具有具有不同类型的像素的成像阵列。不同类型的像素可以检测IR或SWIR光谱中的不同波长范围。像素可以包括滤光器，其在通过其它波长的同时阻挡IR光谱中的一些波长的辐射。滤波器可以由半导体材料形成，因此可以使用传统的CMOS处理技术容易地与CMOS像素集成。

7. 发明授权

US08664739B2 Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry 有权
标题翻译：图像传感器包括与硅衬底和硅电路集成的孤立的锗光电探测器
公开(公告)号：US08664739B2
公开(公告)日：2014-03-04
申请号：US13116411
申请日：2011-05-26
申请人： Clifford A. King , Conor S. Rafferty
发明人： Clifford A. King , Conor S. Rafferty
IPC分类号： H01L31/00 , H01L31/06 , H01L29/732 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L31/062 , H01L31/113
CPC分类号： H01L27/14634 , H01L21/02381 , H01L21/02532 , H01L21/02639 , H01L27/14632 , H01L27/14643 , H01L27/14649 , H01L31/028 , H01L2924/351
摘要： In accordance with the invention, an improved image sensor includes an array of germanium photosensitive elements integrated with a silicon substrate and integrated with silicon readout circuits. The silicon transistors are formed first on a silicon substrate, using well known silicon wafer fabrication techniques. The germanium elements are subsequently formed overlying the silicon by epitaxial growth. The germanium elements are advantageously grown within surface openings of a dielectric cladding. Wafer fabrication techniques are applied to the elements to form isolated germanium photodiodes. Since temperatures needed for germanium processing are lower than those for silicon processing, the formation of the germanium devices need not affect the previously formed silicon devices. Insulating and metallic layers are then deposited and patterned to interconnect the silicon devices and to connect the germanium devices to the silicon circuits. The germanium elements are thus integrated to the silicon by epitaxial growth and integrated to the silicon circuitry by common metal layers.
摘要翻译：根据本发明，改进的图像传感器包括与硅衬底集成并与硅读出电路集成的锗感光元件阵列。首先使用公知的硅晶片制造技术在硅衬底上形成硅晶体管。随后通过外延生长将锗元素覆盖在硅上。有利地，锗元素在电介质包层的表面开口内生长。将晶片制造技术应用于元件以形成分离的锗光电二极管。由于锗处理所需的温度低于硅处理所需的温度，锗器件的形成不必影响先前形成的硅器件。然后沉积和图案化绝缘和金属层以互连硅器件并将锗器件连接到硅电路。因此，锗元素通过外延生长与硅集成到一起，并通过公共金属层与硅电路集成。

8. 发明申请

US20120025082A1 LOW-NOISE SEMICONDUCTOR PHOTODETECTORS 有权
标题翻译：低噪声半导体光电二极管
公开(公告)号：US20120025082A1
公开(公告)日：2012-02-02
申请号：US13230715
申请日：2011-09-12
申请人： Conor S. Rafferty , Clifford A. King
发明人： Conor S. Rafferty , Clifford A. King
IPC分类号： G01J5/02 , H01L31/02
CPC分类号： H01L31/0352 , H01L27/14649 , H01L31/03529 , H01L31/101 , H01L2924/0002 , Y02E10/50 , H01L2924/00
摘要： A photodetector is formed from a body of semiconductor material substantially surrounded by dielectric surfaces. A passivation process is applied to at least one surface to reduce the rate of carrier generation and recombination on that surface. Photocurrent is read out from at least one electrical contact, which is formed on a doped region whose surface lies entirely on a passivated surface. Unwanted leakage current from un-passivated surfaces is reduced through one of the following methods: (a) The un-passivated surface is separated from the photo-collecting contact by at least two junctions; (b) The un-passivated surface is doped to a very high level, at least equal to the conduction band or valence band density of states of the semiconductor; (c) An accumulation or inversion layer is formed on the un-passivated surface by the application of an electric field.
摘要翻译：光电检测器由基本上被电介质表面包围的半导体材料体形成。钝化过程被应用于至少一个表面以降低载体在该表面上的产生和重组的速率。从至少一个电触点读出光电流，该电触点形成在其表面完全位于钝化表面上的掺杂区域上。通过以下方法之一减少未钝化表面的不需要的泄漏电流：（a）未钝化的表面通过至少两个接头与光电收集触点分离; （b）未钝化的表面被掺杂到非常高的水平，至少等于半导体状态的导带或价带密度; （c）通过施加电场在未钝化的表面上形成堆积或反转层。

9. 发明授权

US08035186B2 Low-noise semiconductor photodetectors 有权
标题翻译：低噪声半导体光电探测器
公开(公告)号：US08035186B2
公开(公告)日：2011-10-11
申请号：US11978276
申请日：2007-10-29
申请人： Conor S. Rafferty , Clifford A. King
发明人： Conor S. Rafferty , Clifford A. King
IPC分类号： H01L31/06 , H01L31/0203 , H01L31/00 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L31/0352 , H01L27/14649 , H01L31/03529 , H01L31/101 , H01L2924/0002 , Y02E10/50 , H01L2924/00
摘要： A photodetector is formed from a body of semiconductor material substantially surrounded by dielectric surfaces. A passivation process is applied to at least one surface to reduce the rate of carrier generation and recombination on that surface. Photocurrent is read out from at least one electrical contact, which is formed on a doped region whose surface lies entirely on a passivated surface. Unwanted leakage current from un-passivated surfaces is reduced through one of the following methods. (a) The un-passivated surface is separated from the photo-collecting contact by at least two junctions (b) The un-passivated surface is doped to a very high level, at least equal to the conduction band or valence band density of states of the semiconductor (c) An accumulation or inversion layer is formed on the un-passivated surface by the application of an electric field. Electrical contacts are made to all doped regions, and bias is applied so that a reverse bias is maintained across all junctions.
摘要翻译：光电检测器由基本上被电介质表面包围的半导体材料体形成。钝化过程被应用于至少一个表面以降低载体在该表面上的产生和重组的速率。从至少一个电触点读出光电流，该电触点形成在其表面完全位于钝化表面上的掺杂区域上。通过以下方法之一减少未钝化表面的不需要的泄漏电流。（a）未钝化的表面通过至少两个结与光电收集接触分离（b）未钝化的表面被掺杂到非常高的水平，至少等于状态的导带或价带密度的半导体（c）通过施加电场在未钝化的表面上形成堆积或反转层。对所有掺杂区域进行电触点，并且施加偏压，使得跨所有接合部保持反向偏压。

10. 发明申请

US20110074995A1 METHODS AND APPARATUS FOR IMAGING SYSTEMS 有权
标题翻译：成像系统的方法和装置
公开(公告)号：US20110074995A1
公开(公告)日：2011-03-31
申请号：US12570679
申请日：2009-09-30
申请人： Conor S. Rafferty , Clifford A. King , Michael Philip Decelle , Jason Y. Sproul , Bryan D. Ackland
发明人： Conor S. Rafferty , Clifford A. King , Michael Philip Decelle , Jason Y. Sproul , Bryan D. Ackland
IPC分类号： H04N5/335
CPC分类号： H04N5/35563
摘要： Imaging arrays comprising at least two different imaging pixel types are described. The different imaging pixel types may differ in their light sensitivities and/or light saturation levels. Methods of processing the output signals of the imaging arrays are also described, and may produce images having a greater dynamic range than would result from an imaging array comprising only one of the at least two different imaging pixel types.
摘要翻译：描述包括至少两个不同成像像素类型的成像阵列。不同的成像像素类型在其光敏度和/或光饱和度方面可能不同。还描述了处理成像阵列的输出信号的方法，并且可以产生具有比由仅包括至少两种不同成像像素类型中的一种的成像阵列产生的动态范围更大的图像。

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