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1. 发明专利

JP2007223024A Method for producing support for growth of localized elongated nanostructure 有权
标题翻译：用于生产本地化的延长的纳米结构生长的方法
公开(公告)号：JP2007223024A
公开(公告)日：2007-09-06
申请号：JP2007011726
申请日：2007-01-22
申请人： Commiss Energ Atom , コミツサリアタレネルジーアトミーク
发明人： FOURNEL FRANK , DIJON JEAN , MUR PIERRE
IPC分类号： B82B3/00 , B01J23/52 , B01J23/755 , B01J37/02 , C01B31/02
CPC分类号： B81C1/00206 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B33/027 , Y10S977/72 , Y10S977/762 , Y10S977/763 , Y10S977/936
摘要： PROBLEM TO BE SOLVED: To provide a method for accurately localizing catalyst nanoparticles. SOLUTION: The present invention relates to a method for producing a support containing nanoparticles (22) for the growth of nanostructures (23), wherein the nanoparticles is periodically arrayed and the method includes steps of: providing a support including, in the vicinity of one of the surfaces, a periodic array of crystal defects and/or stress fields (18); depositing on the surface, a continuous layer (20) of a first material catalyzing the nanostructure growth reaction; and fractionating the first material layer (20) by a heat treatment so as to form the first material nanoparticles (22). The invention also relates to a method for producing nanostructures from the above support. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种准确定位催化剂纳米颗粒的方法。解决方案：本发明涉及一种用于生产纳米颗粒（22）的载体的方法，所述纳米颗粒用于生长纳米结构（23），其中所述纳米颗粒周期性地排列，并且所述方法包括以下步骤：提供包括在一个表面附近，晶体缺陷和/或应力场的周期性阵列（18）; 在表面上沉积催化纳米结构生长反应的第一材料的连续层（20）; 并通过热处理分级第一材料层（20）以形成第一材料纳米颗粒（22）。本发明还涉及从上述载体制备纳米结构的方法。版权所有（C）2007，JPO＆INPIT

2. 发明专利

JP2006052127A Method of growing oriented carbon nanotube 有权
标题翻译：生长型碳纳米管的方法
公开(公告)号：JP2006052127A
公开(公告)日：2006-02-23
申请号：JP2005198112
申请日：2005-07-06
申请人： Commiss Energ Atom , コミツサリアタレネルジーアトミーク
发明人： DIJON JEAN , LE POCHE HELENE , GOISLARD DE MONSABERT THOMAS
IPC分类号： C01B31/02 , H01J9/02
CPC分类号： B82Y40/00 , B82Y30/00 , C01B32/162 , C01B2202/08 , C01B2202/34 , C01B2202/36 , C03C17/36 , C03C17/3615 , C03C17/3626 , C03C17/3634 , C03C17/3636 , C03C17/3649 , C03C2218/153 , C23C14/34 , C30B23/00 , C30B29/02 , C30B29/605
摘要： PROBLEM TO BE SOLVED: To provide a method of growing a carbon nanotube by which the carbon nanotube vertical to a surface or a device is grown using a solid carbon target without using a high temperature filament. SOLUTION: The method is a method for growing the oriented carbon nanotube on a sample using carbon or the carbon-based target in a deposition chamber where plasma dominantly exists. The sample (16) is arranged to come in contact with the target (15), each of the sample and the target has a free surface and the growth of the carbon nanotube is induced on the free surface of the sample by the plasma. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种生长碳纳米管的方法，通过该碳纳米管，使用固体碳靶使生长表面或器件的碳纳米管不使用高温长丝。解决方案：该方法是一种在等离子体主要存在的沉积室中使用碳或碳基靶材在样品上生长定向碳纳米管的方法。样品（16）布置成与靶（15）接触，样品和靶中的每一个具有自由表面，并且通过等离子体在样品的自由表面上诱导碳纳米管的生长。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2008166756A Interlayer wiring element based on carbon nanotube 有权
标题翻译：基于碳纳米管的中间层接线元件
公开(公告)号：JP2008166756A
公开(公告)日：2008-07-17
申请号：JP2007320949
申请日：2007-12-12
申请人： Commiss Energ Atom , コミツサリアタレネルジーアトミーク
发明人： DIJON JEAN , PANTIGNY PHILIPPE
IPC分类号： H01L21/768 , C01B31/02 , C23C16/04 , C23C16/26
CPC分类号： H01L21/76877 , H01L21/7682 , H01L23/5226 , H01L23/53276 , H01L2221/1094 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide an interlayer wiring element based on carbon nanotube that implies excellent electric contact between carbon nanotube and a conductor that makes interlayer wiring. SOLUTION: The present invention relates to an element designed to make interlayer wiring of at least two conductors of a micro electronics circuit, including an initial conductor 210 called a lower side conductor; a dielectric layer 230 arranged in the initial conductor; a second conductor 220 called an upper side conductor on the dielectric layer; and a hollow part 240 in the dielectric layer that appears on the lower side conductor at one side and on the upper side conductor on the other side. The upper side conductor 220 has a bridge formed in the upper part of the lower side conductor 210, and the hollow part 240 has two vents 243 in latter both sides on a horizontal surface where it appears on the upper side conductor. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种基于碳纳米管的层间布线元件，其意味着碳纳米管与形成层间布线的导体之间的良好的电接触。解决方案：本发明涉及一种设计用于制造微电子电路的至少两个导体的层间布线的元件，包括称为下侧导体的初始导体210; 布置在初始导体中的电介质层230; 称为电介质层上的上侧导体的第二导体220; 以及在一侧的下侧导体和另一侧的上侧导体上出现的电介质层中的中空部240。上侧导体220具有形成在下侧导体210的上部的桥，并且中空部240在后方的两侧具有在出现在上侧导体上的水平面上的两个通气口243。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2008198603A Field-effect electron emission structure with emission focusing 审中-公开
标题翻译：具有排放聚焦的场效应电子发射结构
公开(公告)号：JP2008198603A
公开(公告)日：2008-08-28
申请号：JP2008025258
申请日：2008-02-05
申请人： Commiss Energ Atom , コミツサリアタレネルジーアトミーク
发明人： DIJON JEAN
IPC分类号： H01J1/304
CPC分类号： H01J29/58 , H01J29/02 , H01J2329/00
摘要： PROBLEM TO BE SOLVED: To provide an electron emitting structure which minimizes problems. SOLUTION: An electron emitting structure includes at least one electron emitting region formed from the junction between a cathode electrode (43) and an extraction gate electrode (45). The electron emitting region includes a plurality of electron emission devices (47). The electron emitting devices are arranged in a line in openings (46) extending in a row direction, the openings which are formed in the gate electrode (45) and an electrically insulating layer isolating the cathode electrode and the gate electrode. These gate opening (46) are arranged in a plurality of parallel rows, and each gate opening is located between two bands of the gate electrode. This structure is formed by the row of the electron emission devices (47) and the asymmetrical layout of the bands (49) of the gate electrode, and is provided with means for focusing electron beams emitted from the electron emission devices (47). This asymmetrical layout is organized for focusing all electron beams. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供使问题最小化的电子发射结构。解决方案：电子发射结构包括由阴极电极（43）和提取栅电极（45）之间的接合部形成的至少一个电子发射区域。电子发射区包括多个电子发射装置（47）。电子发射器件在行方向上延伸的开口（46）中排列成一行，形成在栅电极（45）中的开口和隔离阴极电极和栅电极的电绝缘层。这些栅极开口（46）布置成多个平行的行，并且每个栅极开口位于栅电极的两个带之间。这种结构由电子发射器件（47）的行和栅极的带（49）的不对称布局形成，并且设置有用于聚焦从电子发射器件（47）发射的电子束的装置。这种非对称布局被组织用于聚焦所有电子束。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2010010661A Horizontal interconnection architecture based on carbon nanotube 有权
标题翻译：基于碳纳米管的水平互连结构
公开(公告)号：JP2010010661A
公开(公告)日：2010-01-14
申请号：JP2009105554
申请日：2009-04-23
申请人： Commiss Energ Atom , コミツサリアタレネルジーアトミーク
发明人： DIJON JEAN
IPC分类号： H01L21/60 , B82B3/00 , C01B31/02 , H01L21/3205 , H01L23/52
CPC分类号： H01L23/53276 , B82Y10/00 , H01L21/76879 , H01L24/02 , H01L2221/1094 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01044 , H01L2924/01046 , H01L2924/01049 , H01L2924/0105 , H01L2924/01057 , H01L2924/01058
摘要： PROBLEM TO BE SOLVED: To provide a device that can establish a horizontal electrical connection between at least two bonding pads.
SOLUTION: The device has a horizontal carbon nanotube which links a vertical wall of the bonding pad. The boding pad is formed by stacking layers of at least two substances, one of which catalyzes growth of the nanotube and the other of which acts as a spacer between the layers of substance which catalyzes growth of the nanotube.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种可以在至少两个接合焊盘之间建立水平电连接的装置。解决方案：该装置具有连接接合垫的垂直壁的水平碳纳米管。该编码垫通过层叠至少两种物质形成，其中一种物质催化纳米管的生长，另一种则作为催化纳米管生长的物质层之间的间隔物。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2007227380A Cathode structure having nanotube for radiation screen 审中-公开
标题翻译：具有纳米管辐射屏蔽的阴极结构
公开(公告)号：JP2007227380A
公开(公告)日：2007-09-06
申请号：JP2007041076
申请日：2007-02-21
申请人： Commiss Energ Atom , コミツサリアタレネルジーアトミーク
发明人： DIJON JEAN , NICOLAS PIERRE
IPC分类号： H01J1/304
CPC分类号： B82Y10/00 , H01J1/304 , H01J31/127 , H01J2201/30469 , H01J2329/00
摘要： PROBLEM TO BE SOLVED: To elucidate a cathode structure capable of optimizing leak current. SOLUTION: The triode type cathode structure comprises a cathode conductor (22), an electrical insulation layer (24) and a grid electrode (25), superposed on a support (21). The electrical insulation layer and the grid electrode comprise an opening exposing at least one electron emitting element, and is equipped with a nanotube (28) electrically connected to the cathode conductor (22) and made of an electron emitting material. The cathode structure is provided with a protective means preventing the longest nanotube from coming into contact with the grid electrode (25). COPYRIGHT: (C)2007,JPO&INPIT

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