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1. 发明授权

US5055422A Process for the construction of semiconductor lasers and lasers obtained by the process 失效
标题翻译：用于制造半导体激光器和工艺获得的激光的工艺
公开(公告)号：US5055422A
公开(公告)日：1991-10-08
申请号：US543787
申请日：1990-07-24
申请人： Claude Weisbuch , Baudouin De Cremoux , Jean P. Pocholle
发明人： Claude Weisbuch , Baudouin De Cremoux , Jean P. Pocholle
IPC分类号： H01S5/00 , H01L33/00 , H01S5/042 , H01S5/10 , H01S5/18
CPC分类号： H01S5/18 , H01L33/0062 , H01S5/10 , Y10S148/095
摘要： The present invention relates to processes for the construction of semiconductor lasers.The process according to the invention is essentially characterized in that it consists in forming a layer 1 of a laser semiconductor active medium, in forming an optical cavity 2 associated with this layer, in disposing, on at least a part of the surface of the layer, first 6 and second 7 layers of materials of impurities of opposite polarities, in causing diffusion into the active medium of at least a part of the two materials of impurities to form, in the first layer, a cylinder 8 axis substantially parallel to the axis of the optical cavity and formed of two semi-cylindrical half-shells 9, 10 of diffused impurities of opposite polarities, and in connecting two conductors 12 of the electrical energy respectively to the two half-shells.Application to the construction of a plurality of laser diodes on one and the same support substrate, to create a homogeneous and dense single laser beam.
摘要翻译： PCT No.PCT / FR89 / 00062 Sec。 371日期1990年7月24日 102（e）日1990年7月24日PCT 1989年12月5日PCT公布。出版物WO90 / 06608 日期：1990年6月14日。本发明涉及半导体激光器的构造方法。根据本发明的方法的基本特征在于它包括在形成与该层相关联的光腔2中形成激光半导体活性介质的层1，在层的至少一部分表面上，第6层和第7层具有相反极性的杂质的材料，使第二层中的至少一部分杂质扩散到活性介质中，以在第一层中形成基本上平行于轴线的圆柱体8轴并由两个具有相反极性的扩散杂质的半圆柱半壳9,10形成，并将两个电能的两个导体12分别连接到两个半壳上。应用于在同一个支撑基板上构造多个激光二极管，以产生均匀且致密的单个激光束。

2. 发明授权

US5053708A System for the optical pumping of a cell of atomic or molecular gases and its application to a magnetometer 失效
标题翻译：原子或分子气体的光学泵送系统及其应用于磁力计
公开(公告)号：US5053708A
公开(公告)日：1991-10-01
申请号：US365365
申请日：1989-06-13
申请人： Alain Aspect , Marc Himbert , Martine Doisy , Claude Weisbuch , Baudouin de Cremoux
发明人： Alain Aspect , Marc Himbert , Martine Doisy , Claude Weisbuch , Baudouin de Cremoux
IPC分类号： G01R33/26
CPC分类号： G01R33/26
摘要： A system for the optical pumping of a cell of atomic or molecular gases comprises at least one optical cavity comprising at least one cell of atomic or molecular gases, one optical pumping wave being coupled to the optical cavity.
摘要翻译：用于光学泵浦原子或分子气体的单元的系统包括至少一个包含至少一个原子或分子气体的光腔，一个光泵浦波耦合到光学腔。

3. 发明申请

US20050214160A1 Supporting device for chromophore elements 审中-公开
标题翻译：发色团元素支持装置
公开(公告)号：US20050214160A1
公开(公告)日：2005-09-29
申请号：US11052708
申请日：2005-02-01
申请人： Claude Weisbuch , Henri Benisty , Herve Arditty
发明人： Claude Weisbuch , Henri Benisty , Herve Arditty
IPC分类号： G01N21/64
CPC分类号： G01N21/6454 , G01N21/6428 , G01N21/6452 , G01N21/6486
摘要： A device for supporting chromophore elements comprises a plane mirror covered in a layer of material that is transparent at the wavelengths to be detected, said layer having a set of spots on which the chromophore elements are fixed, the spots being subdivided into a plurality of zones of different thicknesses so as to cause the intensity of the fluorescence emitted by the chromophore elements to vary by destructive interference or by constructive interference, respectively.
摘要翻译：用于支撑生色团元件的装置包括覆盖在待检测波长处是透明的材料层中的平面镜，所述层具有固定发色团元件的一组斑点，斑点被细分成多个区域以使发色团发出的荧光的强度分别由于破坏性干扰或建设性干扰而变化。

4. 发明授权

US5684817A Semiconductor laser having a structure of photonic bandgap material 失效
标题翻译：具有光子带隙材料结构的半导体激光器
公开(公告)号：US5684817A
公开(公告)日：1997-11-04
申请号：US640525
申请日：1996-05-01
申请人： Romuald Houdre , Claude Weisbuch , Vincent Berger
发明人： Romuald Houdre , Claude Weisbuch , Vincent Berger
IPC分类号： G02B6/122 , H01S5/10 , H01S5/125 , H01S5/40 , H01S3/0941
CPC分类号： H01S5/1028 , B82Y20/00 , G02B6/1225 , H01S5/105 , H01S5/125 , H01S5/4031
摘要： Disclosed is a semiconductor laser that is constituted by at least one active layer sandwiched between two confinement layers with P and N type doping to constitute a PN junction. In at least one of the confinement layers and/or the active layer, holes are designed on each side of the cavity so as to form structures of photonic bandgap material along the lateral walls of the cavity and the ends of the cavity.
摘要翻译：公开了一种半导体激光器，其由夹在具有P和N型掺杂的两个约束层之间的至少一个有源层构成，以构成PN结。在限制层和/或有源层中的至少一个中，孔被设计在空腔的每一侧上，以沿着空腔的侧壁和空腔的端部形成光子带隙材料的结构。

5. 发明授权

US5075742A Semiconductor structure for optoelectronic components with inclusions 失效
标题翻译：包含光电元件的半导体结构
公开(公告)号：US5075742A
公开(公告)日：1991-12-24
申请号：US639530
申请日：1991-01-10
申请人： Jean-Michel Gerard , Claude Weisbuch
发明人： Jean-Michel Gerard , Claude Weisbuch
IPC分类号： H01S5/00 , H01L33/06 , H01L33/30 , H01S5/02 , H01S5/042 , H01S5/10 , H01S5/32 , H01S5/323 , H01S5/34 , H01S5/343
CPC分类号： H01S5/34 , B82Y20/00 , H01L33/06 , H01S5/10 , H01S5/32 , H01L33/30 , H01S5/021 , H01S5/3403 , H01S5/3432
摘要： The object of the invention is to reduce the influence of dislocations on the functioning of structures for optoelectronic component, such as laser, made from semiconductor materials. Accordingly, one of the lasers of such a structure comprises three-dimensional inclusions in a semiconductor material with a thinner forbidden band than the forbidden band of the layer material. The inclusions are e.g. distributed over several planes of the active layer of a laser, and may be in InAs introduced into a layer in GaAs.
摘要翻译：本发明的目的是减少位错对由半导体材料制成的光电子部件如激光器的结构的功能的影响。因此，这种结构的激光器之一包括在具有比层材料的禁带更薄的禁带的半导体材料中的三维夹杂物。夹杂物是例如分布在激光器的有源层的几个平面上，并且可以在GaAs中引入InAs中。

6. 发明授权

US10184891B2 Biochip device 有权
公开(公告)号：US10184891B2
公开(公告)日：2019-01-22
申请号：US13976596
申请日：2011-12-28
申请人： Claude Weisbuch , Lucio Martinelli , Henri Benisty , Christof Schafauer , Gabriel Sagarzazu , Thierry Gacoin , Mélanie Bedu
发明人： Claude Weisbuch , Lucio Martinelli , Henri Benisty , Christof Schafauer , Gabriel Sagarzazu , Thierry Gacoin , Mélanie Bedu
IPC分类号： G01N21/77 , G01N21/64 , G01N21/47 , G01N21/55
摘要： A biochip device comprising a substrate constituted by at least one plate of material forming a multimode planar waveguide and carrying chromophore elements suitable for emitting fluorescence in response to excitation by guided waves having an evanescent portion, the device being characterized in that it includes coupling means for coupling excitation light with the waveguide in the form of guided waves, the coupling means being substantially non-directional.

7. 发明申请

US20080056950A1 DEVICE FOR THE DETECTION OF FLUORESCENCE EMITTED BY CHROMOPHORIC ELEMENTS IN THE WELLS OF A MULTIWELL PLATE 审中-公开
标题翻译：用于检测由多层板的孔中的色素元素发出的荧光的装置
公开(公告)号：US20080056950A1
公开(公告)日：2008-03-06
申请号：US11627043
申请日：2007-01-25
申请人： Claude Weisbuch , Maxime Rattier , Georges Reymond , Houtai Choumane
发明人： Claude Weisbuch , Maxime Rattier , Georges Reymond , Houtai Choumane
IPC分类号： G01N21/01
CPC分类号： G01N21/6452 , G01N2021/6484 , G01N2201/06193 , G01N2201/0826
摘要： A device for detecting the fluorescence emitted by chromophore elements contained in the wells of a multiwell plate, the device comprising means integrated in the transparent bottoms of the wells of the plate to limit the penetration length in the wells of a light beam for exciting chromophore elements fixed on the bottoms of the wells.
摘要翻译：一种用于检测包含在多孔板的孔中的发色团元件发出的荧光的装置，该装置包括集成在板的孔的透明底部中的装置，以限制用于激发发色团元件的光束的阱中的穿透长度固定在井的底部。

8. 发明授权

US07306766B2 Biochip type device 失效
标题翻译：生物芯片型设备
公开(公告)号：US07306766B2
公开(公告)日：2007-12-11
申请号：US10849141
申请日：2004-05-20
申请人： Claude Weisbuch , Henri Benisty
发明人： Claude Weisbuch , Henri Benisty
IPC分类号： G01N21/01 , G01N21/64
CPC分类号： G01N21/7703 , G01N21/648
摘要： An improved biochip type device comprising a substrate (10) including an intermediate non-absorbent multilayer mirror (12) covered by a layer (14) of high refractive index material having chromophore elements (16) fixed thereon, the layer (14) further including feature (24) for extracting guided-mode light in order to recover the light emitted by the chromophore elements (16) into the layer (14) in response to light excitation, and direct the light to detection and measurement means.
摘要翻译：一种改进的生物芯片型装置，包括：衬底（10），包括由固定有发色团元件（16）的高折射率材料层（14）覆盖的中间非吸收性多层反射镜（12），所述层（14）还包括特征（24），用于提取导向光，以便响应于光激发将发色团元件（16）发射的光恢复到层（14）中，并将光引导到检测和测量装置。

9. 发明申请

US20060202226A1 Single or multi-color high efficiency light emitting diode (LED) by growth over a patterned substrate 有权
标题翻译：单一或多色高效率发光二极管（LED）通过在图案化衬底上生长
公开(公告)号：US20060202226A1
公开(公告)日：2006-09-14
申请号：US11067910
申请日：2005-02-28
申请人： Claude Weisbuch , Aurelien David , James Speck , Steven DenBaars
发明人： Claude Weisbuch , Aurelien David , James Speck , Steven DenBaars
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/22 , H01L33/24 , H01L2933/0083
摘要： A single or multi-color light emitting diode (LED) with high extraction efficiency is comprised of a substrate, a buffer layer formed on the substrate, one or more patterned layers deposited on top of the buffer layer, and one or more active layers formed on or between the patterned layers, for example by Lateral Epitaxial Overgrowth (LEO), and including one or more light emitting species, such as quantum wells. The patterned layers include a patterned, perforated or pierced mask made of insulating, semiconducting or metallic material, and materials filling holes in the mask. The patterned layer acts as an optical confining layer due to a contrast of a refractive index with the active layer and/or as a buried diffraction grating due to variation of a refractive index between the mask and the material filling the holes in the mask.
摘要翻译：具有高提取效率的单色或多色发光二极管（LED）由衬底，形成在衬底上的缓冲层，沉积在缓冲层顶部上的一个或多个图案化层和形成的一个或多个有源层组成在图案化层之间或之间，例如通过横向外延生长（LEO），并且包括一个或多个发光物质，例如量子阱。图案化层包括由绝缘，半导体或金属材料制成的图案化，穿孔或穿孔掩模，以及填充掩模中的孔的材料。由于掩模和填充掩模中的孔的材料之间的折射率的变化，由于折射率与有源层和/或作为掩埋衍射光栅的对比，图案化层用作光学限制层。

10. 发明申请

US20060192217A1 High efficiency light emitting diode (LED) with optimized photonic crystal extractor 有权
公开(公告)号：US20060192217A1
公开(公告)日：2006-08-31
申请号：US11067956
申请日：2005-02-28
申请人： Aurelien David , Claude Weisbuch , Steven DenBaars
发明人： Aurelien David , Claude Weisbuch , Steven DenBaars
IPC分类号： H01L29/22
CPC分类号： H01L33/20 , H01L33/382 , H01L2933/0083
摘要： A high efficiency, and possibly highly directional, light emitting diode (LED) with an optimized photonic crystal extractor. The LED is comprised of a substrate, a buffer layer grown on the substrate (if needed), an active layer including emitting species, one or more optical confinement layers that tailor the structure of the guided modes in the LED, and one or more diffraction gratings, wherein the diffraction gratings are two-dimensional photonic crystal extractors. The substrate may be removed and metal layers may be deposited on the buffer layer, photonic crystal and active layer, wherein the metal layers may function as a mirror, an electrical contact, and/or an efficient diffraction grating.

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