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1. 发明申请

US20120025278A1 SCHOTTKY DIODE 有权
标题翻译：肖特基二极管
公开(公告)号：US20120025278A1
公开(公告)日：2012-02-02
申请号：US12845925
申请日：2010-07-29
申请人： Chung Yu Hung , Chih Min Hu , Wing Chor Chan , Jeng Gong
发明人： Chung Yu Hung , Chih Min Hu , Wing Chor Chan , Jeng Gong
IPC分类号： H01L29/812
CPC分类号： H01L29/872 , H01L29/402 , H01L29/423
摘要： A Schottky diode comprises an ohmic layer that can serve as a cathode and a metal layer that can serve as an anode, and a drift channel formed of semiconductor material that extends between the ohmic and metal layers. The drift channel includes a heavily doped region adjacent to the ohmic contact layer. The drift channel forms a Schottky barrier with the metal layer. A pinch-off mechanism is provided for pinching off the drift channel while the Schottky diode is reverse-biased. As a result, the level of saturation or leakage current between the metal layer and the ohmic contact layer under a reverse bias condition of the Schottky diode is reduced.
摘要翻译：肖特基二极管包括可以用作阴极的欧姆层和可以用作阳极的金属层，以及由在欧姆层和金属层之间延伸的半导体材料形成的漂移通道。漂移沟道包括与欧姆接触层相邻的重掺杂区域。漂移通道与金属层形成肖特基势垒。在肖特基二极管反向偏置的情况下，提供夹断机构来夹紧漂移通道。结果，在肖特基二极管的反向偏置条件下，金属层与欧姆接触层之间的饱和或漏电流的电平降低。

2. 发明授权

US08350304B2 Junction-field-effect-transistor devices and methods of manufacturing the same 有权
标题翻译：结场效应晶体管器件及其制造方法
公开(公告)号：US08350304B2
公开(公告)日：2013-01-08
申请号：US12795486
申请日：2010-06-07
申请人： Chih-Min Hu , Chung Yu Hung , Wing Chor Chan , Jeng Gong
发明人： Chih-Min Hu , Chung Yu Hung , Wing Chor Chan , Jeng Gong
IPC分类号： H01L29/66
CPC分类号： H01L29/66901 , H01L29/808
摘要： A junction-field-effect-transistor (JFET) device includes a substrate of a first-type impurity, a first well region of a second-type impurity in the substrate, a pair of second well regions of the first-type impurity separated from each other in the first well region, a third well region of the first-type impurity between the pair of second well regions, a first diffused region of the second-type impurity between the third well region and one of the second well regions, and a second diffused region of the second-type impurity between the third well region and the other one of the second well regions.
摘要翻译：结场效应晶体管（JFET）器件包括第一类杂质的衬底，衬底中第二类杂质的第一阱区，第一类杂质的一对第二阱区与在第一阱区域中彼此相对的第一阱区域，第一阱区域之间的第一类型杂质的第三阱区域，第三阱区域和第二阱区域之一中的第二类型杂质的第一扩散区域，以及在第三阱区域和第二阱区域中的另一个区域之间的第二类型杂质的第二扩散区域。

3. 发明授权

US08264056B2 Schottky diode 有权
标题翻译：肖特基二极管
公开(公告)号：US08264056B2
公开(公告)日：2012-09-11
申请号：US12845925
申请日：2010-07-29
申请人： Chung Yu Hung , Chih Min Hu , Wing Chor Chan , Jeng Gong
发明人： Chung Yu Hung , Chih Min Hu , Wing Chor Chan , Jeng Gong
IPC分类号： H01L27/095 , H01L29/47 , H01L29/812
CPC分类号： H01L29/872 , H01L29/402 , H01L29/423
摘要： A Schottky diode comprises an ohmic layer that can serve as a cathode and a metal layer that can serve as an anode, and a drift channel formed of semiconductor material that extends between the ohmic and metal layers. The drift channel includes a heavily doped region adjacent to the ohmic contact layer. The drift channel forms a Schottky barrier with the metal layer. A pinch-off mechanism is provided for pinching off the drift channel while the Schottky diode is reverse-biased. As a result, the level of saturation or leakage current between the metal layer and the ohmic contact layer under a reverse bias condition of the Schottky diode is reduced.
摘要翻译：肖特基二极管包括可以用作阴极的欧姆层和可以用作阳极的金属层，以及由在欧姆层和金属层之间延伸的半导体材料形成的漂移通道。漂移沟道包括与欧姆接触层相邻的重掺杂区域。漂移通道与金属层形成肖特基势垒。在肖特基二极管反向偏置的情况下，提供夹断机构来夹紧漂移通道。结果，在肖特基二极管的反向偏置条件下，金属层与欧姆接触层之间的饱和或漏电流的电平降低。

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