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1. 发明授权

US08232565B2 Light emitting diode for AC operation 有权
标题翻译：用于交流操作的发光二极管
公开(公告)号：US08232565B2
公开(公告)日：2012-07-31
申请号：US12607644
申请日：2009-10-28
申请人： Chung Hoon Lee , Dae Won Kim , Dae Sung Kal , Won Cheol Seo , Kyung Hee Ye , Yeo Jin Yoon
发明人： Chung Hoon Lee , Dae Won Kim , Dae Sung Kal , Won Cheol Seo , Kyung Hee Ye , Yeo Jin Yoon
IPC分类号： H01L33/00
CPC分类号： H01L27/153 , H01L33/20 , H01L33/62 , H01L2224/48 , H05B33/0821
摘要： The present invention discloses a light emitting diode (LED) including a plurality of light emitting cells arranged on a substrate. The LED includes half-wave light emitting units each including at least one light emitting cell, each half-wave light emitting unit including first and second terminals respectively arranged at both ends thereof; and full-wave light emitting units each including at least one light emitting cell, each full-wave light emitting units including third and fourth terminals respectively formed at both ends thereof. The third terminal of each full-wave light emitting unit is electrically connected to the second terminals of two half-wave light emitting units, and the fourth terminal of each full-wave light emitting unit is electrically connected to the first terminals of other two half-wave light emitting units. Also, a first half-wave light emitting unit is connected in series between the third terminal of a first full-wave light emitting unit and the fourth terminal of a second full-wave light emitting units, and a second half-wave light emitting units is connected in series between the fourth terminal of the first full-wave light emitting unit and the third terminal of the second full-wave light emitting unit.
摘要翻译：本发明公开了一种发光二极管（LED），其包括布置在基板上的多个发光单元。 LED包括每个包括至少一个发光单元的半波发光单元，每个半波发光单元包括分别布置在其两端的第一和第二端子; 和全波发光单元，每个包括至少一个发光单元，每个全波发光单元包括分别在其两端形成的第三和第四端子。每个全波发光单元的第三端子电连接到两个半波发光单元的第二端子，并且每个全波发光单元的第四端子电连接到另外两个半波发光单元的第一端子波发光单元。此外，第一半波发光单元串联连接在第一全波发光单元的第三端子和第二全波发光单元的第四端子之间，并且第二半波发光单元串联连接在第一全波发光单元的第四端子和第二全波发光单元的第三端子之间。

2. 发明授权

US08810124B2 AC light emitting device with long-persistent phosphor and light emitting device module having the same 有权
标题翻译：具有长持续荧光体和发光器件模块的AC发光器件具有相同的功能
公开(公告)号：US08810124B2
公开(公告)日：2014-08-19
申请号：US12581507
申请日：2009-10-19
申请人： Chung Hoon Lee , Yeo Jin Yoon , Dae Won Kim , Dae Sung Kal , Kyung Hee Ye
发明人： Chung Hoon Lee , Yeo Jin Yoon , Dae Won Kim , Dae Sung Kal , Kyung Hee Ye
IPC分类号： H05B33/14 , H05B33/08 , F21K99/00 , H01L25/075 , H01L33/50 , F21Y113/00
CPC分类号： H01L33/504 , F21K9/00 , F21K9/62 , F21K9/64 , F21V23/06 , F21Y2113/13 , F21Y2115/10 , H01L25/0753 , H01L33/50 , H01L2224/48137 , H01L2224/49107 , H05B33/0821
摘要： Disclosed are an AC light emitting device with a long-persistent phosphor and an AC light emitting device module having the same. According to an exemplary embodiment of the present invention, the light emitting device includes a first light emitting diode chip and a second light emitting diode chip, each of which has a plurality of light emitting cells on a single substrate. Further, a first long-persistent phosphor is positioned on the first light emitting diode chip to perform wavelength conversion for a portion of light emitted from the first light emitting diode chip; and a second long-persistent phosphor is positioned on the second light emitting diode chip to perform wavelength conversion for a portion of light emitted from the second light emitting diode chip. The afterglow luminescence resulted from the second long-persistent phosphor is allowed to be different from that resulted from the first long-persistent phosphor, whereby a flicker effect of the AC light emitting device can be more alleviated.
摘要翻译：公开了具有长持久性荧光体和具有该荧光体的AC发光器件模块的交流发光器件。根据本发明的示例性实施例，发光器件包括第一发光二极管芯片和第二发光二极管芯片，每个芯片在单个基板上具有多个发光单元。此外，第一长持续荧光体位于第一发光二极管芯片上，以对从第一发光二极管芯片发射的光的一部分进行波长转换; 并且第二长持续荧光体位于第二发光二极管芯片上，以对从第二发光二极管芯片发射的光的一部分进行波长转换。使得由第二长持续荧光体产生的余辉发光与第一长持续荧光体不同，从而可以进一步减轻AC发光器件的闪烁效应。

3. 发明授权

US08188489B2 Light emitting diode for AC operation 有权
公开(公告)号：US08188489B2
公开(公告)日：2012-05-29
申请号：US12607506
申请日：2009-10-28
申请人： Chung Hoon Lee , Dae Won Kim , Dae Sung Kal , Won Cheol Seo , Kyung Hee Ye , Yeo Jin Yoon
发明人： Chung Hoon Lee , Dae Won Kim , Dae Sung Kal , Won Cheol Seo , Kyung Hee Ye , Yeo Jin Yoon
IPC分类号： H01L33/00
CPC分类号： H01L27/153 , H01L33/20 , H01L33/62 , H01L2224/48 , H05B33/0821
摘要： The present invention discloses a light emitting diode (LED) including a plurality of light emitting cells arranged on a substrate. The LED includes half-wave light emitting units each including at least one light emitting cell, each half-wave light emitting unit including first and second terminals respectively arranged at both ends thereof; and full-wave light emitting units each including at least one light emitting cell, each full-wave light emitting units including third and fourth terminals respectively formed at both ends thereof. The third terminal of each full-wave light emitting unit is electrically connected to the second terminals of two half-wave light emitting units, and the fourth terminal of each full-wave light emitting unit is electrically connected to the first terminals of other two half-wave light emitting units. Also, a first half-wave light emitting unit is connected in series between the third terminal of a first full-wave light emitting unit and the fourth terminal of a second full-wave light emitting units, and a second half-wave light emitting units is connected in series between the fourth terminal of the first full-wave light emitting unit and the third terminal of the second full-wave light emitting unit.

4. 发明申请

US20130026498A1 SUBSTRATE ASSEMBLY FOR CRYSTAL GROWTH AND FABRICATING METHOD FOR LIGHT EMITTING DEVICE USING THE SAME 有权
标题翻译：用于使用其的发光装置的晶体生长和制造方法的基板组件
公开(公告)号：US20130026498A1
公开(公告)日：2013-01-31
申请号：US13640943
申请日：2011-04-07
申请人： Chung Hoon Lee , Kyung Hee Ye , Dae Sung Kal , Won Cheol Seo
发明人： Chung Hoon Lee , Kyung Hee Ye , Dae Sung Kal , Won Cheol Seo
IPC分类号： H01L33/48 , B32B9/04 , B32B7/02 , B32B15/04
CPC分类号： H01L33/0079 , Y10T428/24942
摘要： A substrate assembly on which a first conduction-type semiconductor layer, an active layer and a second conduction-type semiconductor layer are formed is disclosed, the substrate assembly comprising a first substrate, a second substrate and a bonding layer interposed there between. In the substrate assembly, the thermal expansion coefficient of the bonding layer is smaller than or equal to that of at least one of the first and second substrates.
摘要翻译：公开了一种其上形成有第一导电型半导体层，有源层和第二导电型半导体层的衬底组件，该衬底组件包括第一衬底，第二衬底和介于其间的结合层。在基板组件中，接合层的热膨胀系数小于或等于第一和第二基板中的至少一个的热膨胀系数。

5. 发明授权

US07772588B1 Light emitting device with improved internal quantum efficiency 有权
标题翻译：具有提高的内部量子效率的发光器件
公开(公告)号：US07772588B1
公开(公告)日：2010-08-10
申请号：US12616610
申请日：2009-11-11
申请人： Chung Hoon Lee , Dae Won Kim , Dae Sung Kal , Ki Bum Nam
发明人： Chung Hoon Lee , Dae Won Kim , Dae Sung Kal , Ki Bum Nam
IPC分类号： H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/06 , H01L33/32 , H01S5/1053 , H01S5/341 , H01S5/3412
摘要： A light emitting device can be used for light emitting diodes and laser diodes. The light emitting device includes a substrate, a first semiconductor layer on the substrate, a second semiconductor layer on the first semiconductor layer, and a multi-quantum well structure including at least one well layer and at least one barrier layer between the first and second semiconductor layers. A carrier trap portion is formed in at least one layer within the multi-quantum well structure. The at least one carrier trap portion is distributed at a higher density than a dislocation density of the layer including the carrier trap portion, and the carrier trap portion has a size of 1˜10 nm.
摘要翻译：发光器件可用于发光二极管和激光二极管。发光器件包括衬底，衬底上的第一半导体层，第一半导体层上的第二半导体层，以及多量子阱结构，其包括至少一个阱层和在第一和第二阱之间的至少一个势垒层半导体层。载流子捕获部分形成在多量子阱结构内的至少一层中。所述至少一个载流子捕获部以比包含所述载流子捕获部的层的位错密度高的密度分布，所述载流子捕获部的尺寸为1〜10nm。

6. 发明授权

US07667225B1 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US07667225B1
公开(公告)日：2010-02-23
申请号：US12541749
申请日：2009-08-14
申请人： Chung Hoon Lee , Dae Won Kim , Dae Sung Kal , Ki Bum Nam
发明人： Chung Hoon Lee , Dae Won Kim , Dae Sung Kal , Ki Bum Nam
IPC分类号： H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/06 , H01L33/32 , H01S5/1053 , H01S5/341 , H01S5/3412
摘要： A light emitting device can be used for light emitting diodes and laser diodes. The light emitting device includes a substrate, a first semiconductor layer on the substrate, a second semiconductor layer on the first semiconductor layer, and a multi-quantum well structure including at least one well layer and at least one barrier layer between the first and second semiconductor layers. A carrier trap portion is formed in at least one layer within the multi-quantum well structure. The carrier trap portion has a band-gap energy that gradually decreases from a periphery of the carrier trap portion to a center thereof.
摘要翻译：发光器件可用于发光二极管和激光二极管。发光器件包括衬底，衬底上的第一半导体层，第一半导体层上的第二半导体层，以及多量子阱结构，其包括至少一个阱层和在第一和第二阱之间的至少一个势垒层半导体层。载流子捕获部分形成在多量子阱结构内的至少一层中。载流子捕获部分具有从载流子捕获部分的周边逐渐减小到其中心的带隙能量。

7. 发明授权

US09203007B2 Light emitting diode assembly 有权
标题翻译：发光二极管组件
公开(公告)号：US09203007B2
公开(公告)日：2015-12-01
申请号：US14123393
申请日：2012-05-25
申请人： Chung Hoon Lee , Dae Sung Kal , Won Cheol Seo , Young Eun Yang
发明人： Chung Hoon Lee , Dae Sung Kal , Won Cheol Seo , Young Eun Yang
IPC分类号： H01L33/64 , H01L27/15 , H01L25/075 , F21K99/00
CPC分类号： H01L33/64 , F21K9/23 , H01L25/0753 , H01L27/15 , H01L33/642 , H01L33/647 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014 , H01L2924/00
摘要： Disclosed is a light emitting diode assembly. The light emitting diode assembly comprised: a red light emitting diode chip; a short-wavelength light emitting diode chip emitting a light having a wavelength relatively shorter than that of a light emitted from the red light emitting diode chip; a first heat-dispersion member for dispersing most of the heat generated in the short wavelength light emitting diode chip; and a second heat-dispersion member for dispersing most of the heat generated in the red light emitting diode chip. Further, the second heat-dispersion member has heat dispersion performance relatively superior to that of the first heat dispersion member. Thus, spectrum movement in the red light emitted from the red light emitting diode chip may be prevented so as to prevent a color-coordinate transformation during the operation time of same.
摘要翻译：公开了一种发光二极管组件。发光二极管组件包括：红色发光二极管芯片; 发射波长比从红色发光二极管芯片发射的光的波长相对更短的光的短波长发光二极管芯片; 用于分散在短波长发光二极管芯片中产生的大部分热量的第一散热构件; 以及用于分散红色发光二极管芯片中产生的大部分热量的第二散热构件。此外，第二散热构件的散热性能比第一散热构件的热分散性能要好。因此，可以防止从红色发光二极管芯片发射的红色光中的光谱运动，以防止在操作时间相同的色坐标变换。

8. 发明授权

US08154008B2 Light emitting diode with improved structure 有权
标题翻译：具有改进结构的发光二极管
公开(公告)号：US08154008B2
公开(公告)日：2012-04-10
申请号：US12178758
申请日：2008-07-24
申请人： Chung Hoon Lee , Ki Bum Nam , Dae Sung Kal
发明人： Chung Hoon Lee , Ki Bum Nam , Dae Sung Kal
IPC分类号： H01L29/06
CPC分类号： H01L33/32 , H01L33/06 , H01L33/16
摘要： A light emitting diode (LED) for minimizing crystal defects in an active region and enhancing recombination efficiency of electrons and holes in the active region includes non-polar GaN-based semiconductor layers grown on a non-polar substrate. The semiconductor layers include a non-polar N-type semiconductor layer, a non-polar P-type semiconductor layer, and non-polar active region layers positioned between the N-type semiconductor layer and the P-type semiconductor layer. The non-polar active region layers include a well layer and a barrier layer with a superlattice structure.
摘要翻译：用于最小化有源区中的晶体缺陷并提高有源区中的电子和空穴的复合效率的发光二极管（LED）包括在非极性衬底上生长的非极性GaN基半导体层。半导体层包括非极性N型半导体层，非极性P型半导体层和位于N型半导体层和P型半导体层之间的非极性有源区。非极性有源区层包括阱层和具有超晶格结构的势垒层。

9. 发明授权

US09054231B2 Method of fabricating semiconductor device using gang bonding and semiconductor device fabricated by the same 有权
标题翻译：使用组合半导体器件制造的半导体器件的制造方法
公开(公告)号：US09054231B2
公开(公告)日：2015-06-09
申请号：US13992941
申请日：2011-06-30
申请人： Chung Hoon Lee , Dae Sung Kal , Ki Bum Nam
发明人： Chung Hoon Lee , Dae Sung Kal , Ki Bum Nam
IPC分类号： H01L21/00 , H01L33/00 , H01L33/50 , H01L23/00 , H01L33/48
CPC分类号： H01L33/507 , H01L23/49805 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/16 , H01L24/27 , H01L24/32 , H01L24/33 , H01L24/83 , H01L24/94 , H01L33/005 , H01L33/0079 , H01L33/0095 , H01L33/36 , H01L33/44 , H01L33/486 , H01L33/50 , H01L2224/04026 , H01L2224/05073 , H01L2224/05124 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05171 , H01L2224/05553 , H01L2224/05571 , H01L2224/06151 , H01L2224/11462 , H01L2224/16013 , H01L2224/16057 , H01L2224/16151 , H01L2224/27462 , H01L2224/32238 , H01L2224/325 , H01L2224/33151 , H01L2224/81893 , H01L2224/83447 , H01L2224/83455 , H01L2224/83893 , H01L2224/94 , H01L2224/97 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/12041 , H01L2924/12042 , H01L2924/15787 , H01L2933/0033 , H01L2924/00012 , H01L2924/00014 , H01L2224/81 , H01L2924/00
摘要： A method of fabricating a semiconductor device using gang bonding and a semiconductor device fabricated by the same, the method comprising preparing a support substrate having a plurality of semiconductor stack structures aligned on a top thereof. Each of the semiconductor stack structures comprises a first conductive semiconductor layer, a second conductive semiconductor layer and an active region interposed between the first and second conductive semiconductor layers. A member having first lead electrodes and second lead electrodes is prepared to correspond to the plurality of semiconductor stack structures. Then, the semiconductor stack structures are bonded to the member while maintaining the semiconductor stack structures on the support substrate. After the semiconductor stack structures are bonded to the member, the member is divided.
摘要翻译：一种制造使用组合键的半导体器件的方法和由其制造的半导体器件，该方法包括制备具有在其顶部上排列的多个半导体叠层结构的支撑衬底。每个半导体堆叠结构包括第一导电半导体层，第二导电半导体层和介于第一和第二导电半导体层之间的有源区。准备具有第一引线电极和第二引线电极的部件以对应于多个半导体叠层结构。然后，将半导体堆叠结构保持在支撑基板上，同时保持半导体堆叠结构。在半导体堆叠结构结合到构件之后，构件被分割。

10. 发明授权

US08575594B2 Light emitting diode having a barrier layer with a superlattice structure 有权
标题翻译：具有超晶格结构的阻挡层的发光二极管
公开(公告)号：US08575594B2
公开(公告)日：2013-11-05
申请号：US13406313
申请日：2012-02-27
申请人： Chung Hoon Lee , Ki Bum Nam , Dae Sung Kal
发明人： Chung Hoon Lee , Ki Bum Nam , Dae Sung Kal
IPC分类号： H01L29/06
CPC分类号： H01L33/32 , H01L33/06 , H01L33/16
摘要： A light emitting diode (LED) for minimizing crystal defects in an active region and enhancing recombination efficiency of electrons and holes in the active region includes non-polar GaN-based semiconductor layers grown on a non-polar substrate. The semiconductor layers include a non-polar N-type semiconductor layer, a non-polar P-type semiconductor layer, and non-polar active region layers positioned between the N-type semiconductor layer and the P-type semiconductor layer. The non-polar active region layers include a well layer and a barrier layer with a superlattice structure.
摘要翻译：用于最小化有源区中的晶体缺陷并提高有源区中的电子和空穴的复合效率的发光二极管（LED）包括在非极性衬底上生长的非极性GaN基半导体层。半导体层包括非极性N型半导体层，非极性P型半导体层和位于N型半导体层和P型半导体层之间的非极性有源区。非极性有源区层包括阱层和具有超晶格结构的势垒层。

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