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1. 发明申请

US20050258504A1 Fuse structure for a semiconductor device 有权
标题翻译：一种半导体器件的保险丝结构
公开(公告)号：US20050258504A1
公开(公告)日：2005-11-24
申请号：US10850201
申请日：2004-05-19
申请人： Chun-Wen Cheng , Chia-Wen Liang , Richard Lee , Vincent Hsueh
发明人： Chun-Wen Cheng , Chia-Wen Liang , Richard Lee , Vincent Hsueh
IPC分类号： H01L23/525 , H01L29/00
CPC分类号： H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： A fuse structure for a semiconductor device is provided. The fuse structure includes a fuse layer between the upper and lower insulating layers. The fuse layer is connected to the other metal layers through the via plugs. The fuse layer includes at least two separate blocks and at least a connecting block. For the current flowing through the separated blocks in a zig-zag path, of the fuse structure provides at least a fusing point or more than one fusing points. In this way, the negative impact of the single failed fuse can be reduced, thus increasing the reliability of the fuse structure. Also the damage to the devices adjacent to the fuse due to the heat generated by the current can be prevented because when the heat generated during the fuse blowing process will be conducted to the adjacent blocks to facilitate heat dissipation.
摘要翻译：提供一种用于半导体器件的熔丝结构。熔丝结构包括在上绝缘层和下绝缘层之间的熔丝层。熔丝层通过通孔连接到其它金属层。熔丝层包括至少两个单独的块和至少一个连接块。对于流经分隔块的电流，在熔接结构中至少提供一个熔点或多于一个熔点。以这种方式，可以降低单个故障保险丝的负面影响，从而增加了熔丝结构的可靠性。此外，由于当熔丝吹制过程中产生的热量将传导到相邻的块以便于散热时，可以防止由于电流产生的热量而导致与熔断器相邻的器件的损坏。

2. 发明授权

US07176551B2 Fuse structure for a semiconductor device 有权
标题翻译：一种半导体器件的保险丝结构
公开(公告)号：US07176551B2
公开(公告)日：2007-02-13
申请号：US10850201
申请日：2004-05-19
申请人： Chun-Wen Cheng , Chia-Wen Liang , Richard Lee , Vincent Hsueh
发明人： Chun-Wen Cheng , Chia-Wen Liang , Richard Lee , Vincent Hsueh
IPC分类号： H01L29/00
CPC分类号： H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： A fuse structure for a semiconductor device is provided. The fuse structure includes a fuse layer between the upper and lower insulating layers. The fuse layer is connected to the other metal layers through the via plugs. The fuse layer includes at least two separate blocks and at least a connecting block. For the current flowing through the separated blocks in a zig-zag path, of the fuse structure provides at least a fusing point or more than one fusing points. In this way, the negative impact of the single failed fuse can be reduced, thus increasing the reliability of the fuse structure. Also the damage to the devices adjacent to the fuse due to the heat generated by the current can be prevented because when the heat generated during the fuse blowing process will be conducted to the adjacent blocks to facilitate heat dissipation.
摘要翻译：提供一种用于半导体器件的熔丝结构。熔丝结构包括在上绝缘层和下绝缘层之间的熔丝层。熔丝层通过通孔连接到其它金属层。熔丝层包括至少两个单独的块和至少一个连接块。对于流经分隔块的电流，在熔接结构中至少提供一个熔点或多于一个熔点。以这种方式，可以降低单个故障保险丝的负面影响，从而增加了熔丝结构的可靠性。此外，由于当熔丝吹制过程中产生的热量将传导到相邻的块以便于散热时，可以防止由于电流产生的热量而导致与熔断器相邻的器件的损坏。

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