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    • 4. 发明授权
    • Natural language interface using constrained intermediate dictionary of results
    • 自然语言界面使用约束中间词典的结果
    • US07177798B2
    • 2007-02-13
    • US09861860
    • 2001-05-21
    • Cheng HsuVeera Boonjing
    • Cheng HsuVeera Boonjing
    • G06F17/27
    • G10L15/18G10L15/063
    • A method for processing a natural language input provided by a user includes: providing a natural language query input to the user; performing, based on the input, a search of one or more language-based databases; providing, through a user interface, a result of the search to the user; identifying, for the one or more language-based databases, a finite number of database objects; and determining a plurality of combinations of the finite number of database objects. The one or more language-based databases include at least one metadata database including at least one of a group of information types including case information, keywords, information models, and database values.
    • 用于处理由用户提供的自然语言输入的方法包括:向用户提供自然语言查询输入; 基于输入来执行对一个或多个基于语言的数据库的搜索; 通过用户界面向用户提供搜索结果; 为一个或多个基于语言的数据库识别有限数量的数据库对象; 以及确定所述有限数量的数据库对象的多个组合。 一个或多个基于语言的数据库包括至少一个元数据数据库,其包括包括案例信息,关键字,信息模型和数据库值的一组信息类型中的至少一个。
    • 5. 发明申请
    • Germanium phototransistor with floating body
    • 具有浮体的锗光电晶体管
    • US20070295953A1
    • 2007-12-27
    • US11891574
    • 2007-08-10
    • Jong-Jan LeeCheng HsuJer-Shen MaaDouglas Tweet
    • Jong-Jan LeeCheng HsuJer-Shen MaaDouglas Tweet
    • H01L31/00
    • H01L31/1136H01L31/028H01L31/1808Y02E10/547
    • A floating body germanium (Ge) phototransistor and associated fabrication process are presented. The method includes: providing a silicon (Si) substrate; selectively forming an insulator layer overlying the Si substrate; forming an epitaxial Ge layer overlying the insulator layer using a liquid phase epitaxy (LPE) process; forming a channel region in the Ge layer; forming a gate dielectric, gate electrode, and gate spacers overlying the channel region; and, forming source/drain regions in the Ge layer. The LPE process involves encapsulating the Ge with materials having a melting temperature greater than a first temperature, and melting the Ge using a temperature lower than the first temperature. The LPE process includes: forming a dielectric layer overlying deposited Ge; melting the Ge; and, in response to cooling the Ge, laterally propagating an epitaxial growth front into the Ge from an underlying Si substrate surface.
    • 提出了一种浮体锗(Ge)光电晶体管及其制造工艺。 该方法包括:提供硅(Si)衬底; 选择性地形成覆盖Si衬底的绝缘体层; 使用液相外延(LPE)工艺形成覆盖绝缘体层的外延Ge层; 在Ge层中形成沟道区; 形成覆盖所述沟道区的栅极电介质,栅电极和栅极间隔; 并且在Ge层中形成源/漏区。 LPE工艺包括用具有大于第一温度的熔化温度的材料包封Ge,并且使用低于第一温度的温度来熔化Ge。 LPE工艺包括:形成覆盖沉积Ge的介电层; 融化Ge; 并且响应于冷却Ge,将外延生长前沿从下面的Si衬底表面横向传播到Ge中。