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1. 发明申请

US20120169677A1 LIQUID CRYSTAL DISPLAY AND LIQUID CRYSTAL DISPLAY PANEL THEREOF 有权
标题翻译：液晶显示器和液晶显示面板
公开(公告)号：US20120169677A1
公开(公告)日：2012-07-05
申请号：US13097095
申请日：2011-04-29
申请人： Chun-Chi Lai , Ching-Wei Chen , Tsan-Chun Wang , Kuo-Hsing Cheng , Yao-Jen Hsieh
发明人： Chun-Chi Lai , Ching-Wei Chen , Tsan-Chun Wang , Kuo-Hsing Cheng , Yao-Jen Hsieh
IPC分类号： G09G3/36 , G02F1/1333 , G06F3/038
CPC分类号： G09G3/3614 , G09G2300/0426
摘要： A liquid crystal display (LCD) and an LCD panel thereof are provided. The structure of the pixel array of the LCD panel is the structure of the one third source driving (OTSD), and by which skillfully layout the coupled relationship among each pixel, each signal line and each scan line, such that the LCD panel can be driven by a column inversion to achieve the purpose of single-dot inversion displaying, and thus not only reducing the power consumption of the whole LCD, but also promoting the display quality.
摘要翻译：提供液晶显示器（LCD）及其LCD面板。 LCD面板的像素阵列的结构是三分之一源驱动（OTSD）的结构，并且通过其巧妙地布置每个像素，每个信号线和每条扫描线之间的耦合关系，使得LCD面板可以由列反转驱动，实现单点反转显示的目的，不仅可以降低整个LCD的功耗，还能提高显示质量。

2. 发明授权

US08581888B2 Liquid crystal display and liquid crystal display panel thereof 有权
标题翻译：液晶显示器及其液晶显示面板
公开(公告)号：US08581888B2
公开(公告)日：2013-11-12
申请号：US13097095
申请日：2011-04-29
申请人： Chun-Chi Lai , Ching-Wei Chen , Tsan-Chun Wang , Kuo-Hsing Cheng , Yao-Jen Hsieh
发明人： Chun-Chi Lai , Ching-Wei Chen , Tsan-Chun Wang , Kuo-Hsing Cheng , Yao-Jen Hsieh
IPC分类号： G09G3/36
CPC分类号： G09G3/3614 , G09G2300/0426
摘要： A liquid crystal display (LCD) and an LCD panel thereof are provided. The structure of the pixel array of the LCD panel is the structure of the one third source driving (OTSD), and by which skillfully layout the coupled relationship among each pixel, each signal line and each scan line, such that the LCD panel can be driven by a column inversion to achieve the purpose of single-dot inversion displaying, and thus not only reducing the power consumption of the whole LCD, but also promoting the display quality.
摘要翻译：提供液晶显示器（LCD）及其LCD面板。 LCD面板的像素阵列的结构是三分之一源驱动（OTSD）的结构，并且通过其巧妙地布置每个像素，每个信号线和每条扫描线之间的耦合关系，使得LCD面板可以由列反转驱动，实现单点反转显示的目的，不仅可以降低整个LCD的功耗，还能提高显示质量。

3. 发明申请

US20120169956A1 LCD PANEL CAPABLE OF COMPENSATING THE FEED-THROUGH VOLTAGE 有权
标题翻译：可以补偿进给电压的LCD面板
公开(公告)号：US20120169956A1
公开(公告)日：2012-07-05
申请号：US13118446
申请日：2011-05-29
申请人： Chun-Chi Lai , Ching-Wei Chen , Tsan-Chun Wang , Kuo-Hsing Cheng , Yu-Cheng Chen
发明人： Chun-Chi Lai , Ching-Wei Chen , Tsan-Chun Wang , Kuo-Hsing Cheng , Yu-Cheng Chen
IPC分类号： G02F1/136
CPC分类号： G02F1/136213 , G02F1/136286 , G02F2001/134345 , G09G3/3648 , G09G2300/0426 , G09G2300/0439 , G09G2310/0205 , G09G2310/0213 , G09G2320/0214 , H01L27/1251
摘要： An LCD panel transmits the display data to sub-pixels in a zigzag pattern through a data line. The variation of the feed-through voltages of the sub-pixels may be modified by adjusting the ratios of the channel widths and the channel lengths of the TFTs in the sub-pixels to some predetermined ratios, or by adjusting the compensation capacitance to the coupling capacitance of the TFTs of the sub-pixels.
摘要翻译： LCD面板通过数据线将显示数据以锯齿形图案发送到子像素。子像素的馈通电压的变化可以通过调整子像素中的TFT的沟道宽度和沟道长度的比率达到一些预定的比率来修改，或者通过调整对耦合的补偿电容子像素的TFT的电容。

4. 发明授权

US08497947B2 LCD panel capable of compensating the feed-through voltage 有权
公开(公告)号：US08497947B2
公开(公告)日：2013-07-30
申请号：US13118446
申请日：2011-05-29
申请人： Chun-Chi Lai , Ching-Wei Chen , Tsan-Chun Wang , Kuo-Hsing Cheng , Yu-Cheng Chen
发明人： Chun-Chi Lai , Ching-Wei Chen , Tsan-Chun Wang , Kuo-Hsing Cheng , Yu-Cheng Chen
IPC分类号： G02F1/1343 , G02F1/136 , G09G3/36
CPC分类号： G02F1/136213 , G02F1/136286 , G02F2001/134345 , G09G3/3648 , G09G2300/0426 , G09G2300/0439 , G09G2310/0205 , G09G2310/0213 , G09G2320/0214 , H01L27/1251
摘要： An LCD panel transmits the display data to sub-pixels in a zigzag pattern through a data line. The variation of the feed-through voltages of the sub-pixels may be modified by adjusting the ratios of the channel widths and the channel lengths of the TFTs in the sub-pixels to some predetermined ratios, or by adjusting the compensation capacitance to the coupling capacitance of the TFTs of the sub-pixels.

5. 发明授权

US09881840B2 Method of fabricating gate electrode using a treated hard mask 有权
公开(公告)号：US09881840B2
公开(公告)日：2018-01-30
申请号：US13157179
申请日：2011-06-09
申请人： Yu-Lien Huang , Ziwei Fang , Tsan-Chun Wang , Chii-Ming Wu , Chun Hsiung Tsai
发明人： Yu-Lien Huang , Ziwei Fang , Tsan-Chun Wang , Chii-Ming Wu , Chun Hsiung Tsai
IPC分类号： H01L21/8238 , H01L21/3115 , H01L21/033 , H01L21/3213
CPC分类号： H01L21/823814 , H01L21/0337 , H01L21/31155 , H01L21/32139 , H01L21/823807
摘要： A hard mask layer with a limited thickness is formed over a gate electrode layer. A treatment is provided on the hard mask layer to transform the hard mask layer to be more resistant to wet etching solution. A patterning is provided on the treated hard mask layer and the gate electrode to from a gate structure.

6. 发明授权

US08877599B2 Method of forming a semiconductor device 有权
标题翻译：形成半导体器件的方法
公开(公告)号：US08877599B2
公开(公告)日：2014-11-04
申请号：US13471986
申请日：2012-05-15
申请人： Ziwei Fang , Tsan-Chun Wang , De-Wei Yu
发明人： Ziwei Fang , Tsan-Chun Wang , De-Wei Yu
IPC分类号： H01L21/33
CPC分类号： H01L29/7848 , H01L21/26506 , H01L21/26586 , H01L21/26593 , H01L21/324 , H01L21/823807 , H01L21/823814 , H01L21/823878 , H01L29/1608 , H01L29/165 , H01L29/66636 , H01L29/7847
摘要： A semiconductor device having dislocations and a method of fabricating the semiconductor device is disclosed. The exemplary semiconductor device and method for fabricating the semiconductor device enhance carrier mobility. The method includes providing a substrate having an isolation feature therein and two gate stacks overlying the substrate, wherein one of the gate stacks is atop the isolation feature. The method further includes performing a pre-amorphous implantation process on the substrate. The method further includes forming a stress film over the substrate. The method also includes performing an annealing process on the substrate and the stress film.
摘要翻译：公开了一种具有位错的半导体器件和制造半导体器件的方法。用于制造半导体器件的示例性半导体器件和方法增强载流子迁移率。该方法包括提供其中具有隔离特性的衬底和覆盖衬底的两个栅极叠层，其中一个栅极堆叠位于隔离特征顶部。该方法还包括在衬底上执行预非晶体注入工艺。该方法还包括在衬底上形成应力膜。该方法还包括对衬底和应力膜进行退火处理。

7. 发明授权

US08723266B2 Pinch-off control of gate edge dislocation 有权
标题翻译：闭合控制门边缘位错
公开(公告)号：US08723266B2
公开(公告)日：2014-05-13
申请号：US13324257
申请日：2011-12-13
申请人： Chun Hsiung Tsai , Tsan-Chun Wang
发明人： Chun Hsiung Tsai , Tsan-Chun Wang
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/66636 , H01L21/26506 , H01L21/268 , H01L21/324 , H01L21/823412 , H01L21/823425 , H01L21/823807 , H01L21/823814 , H01L29/32 , H01L29/6653 , H01L29/6659 , H01L29/7834 , H01L29/7847 , H01L29/7848
摘要： The embodiments of processes and structures described provide mechanisms for improving the mobility of carriers. A dislocation is formed in a source or drain region between gate structures or between a gate structure and an isolation structure by first amortizing the source or drain region and then recrystallizing the region by using an annealing process with a low pre-heat temperature. A doped epitaxial material may be formed over the recrystallized region. The dislocation and the strain created by the doped epitaxial material in the source or drain region help increase carrier mobility.
摘要翻译：所描述的方法和结构的实施方案提供了改善载体迁移率的机制。在栅极结构之间或栅极结构和隔离结构之间的源极或漏极区域中形成位错，首先使源极或漏极区域摊平，然后通过使用具有低预热温度的退火工艺对该区域进行再结晶。可以在再结晶区域上形成掺杂的外延材料。在源极或漏极区中由掺杂的外延材料产生的位错和应变有助于增加载流子迁移率。

8. 发明授权

US08471973B2 Pixel designs of improving the aperture ratio in an LCD 有权
标题翻译：像素设计提高了LCD中的开口率
公开(公告)号：US08471973B2
公开(公告)日：2013-06-25
申请号：US12788876
申请日：2010-05-27
申请人： Hsiang-Lin Lin , Ching-Huan Lin , Chih-Hung Shih , Wei-Ming Huang , Chih-Hung Lin , Yu-Cheng Chen , Yi-Hui Li , Tsan-Chun Wang
发明人： Hsiang-Lin Lin , Ching-Huan Lin , Chih-Hung Shih , Wei-Ming Huang , Chih-Hung Lin , Yu-Cheng Chen , Yi-Hui Li , Tsan-Chun Wang
IPC分类号： G02F1/36
CPC分类号： G02F1/136209 , G02F1/136213 , G02F2001/13606 , G02F2201/40 , H01L27/1248 , H01L27/1255
摘要： This invention in one aspect relates to a pixel structure. In one embodiment, the pixel structure includes a scan line formed on a substrate and a data line formed over the substrate defining a pixel area, a switch formed inside the pixel area on the substrate, a shielding electrode formed over the switch, a plane organic layer formed over the date line and the pixel area and having no overlapping with the shielding electrode, and a pixel electrode having a first portion and a second portion extending from the first portion, and formed over the shielding electrode and the plane organic layer in the pixel area, wherein the first portion is overlapped with the shielding electrode so as to define a storage capacitor therebetween, and the second portion overlays the plane organic layer and has no overlapping with the data line.
摘要翻译：本发明在一个方面涉及像素结构。在一个实施例中，像素结构包括形成在衬底上的扫描线和形成在限定像素区域的衬底上的数据线，形成在衬底上的像素区域内的开关，形成在开关上的屏蔽电极，有机平面形成在日期线和像素区域上并且与屏蔽电极不重叠的像素电极，以及具有从第一部分延伸的第一部分和第二部分的像素电极，并且形成在屏蔽电极和平面有机层的上方像素区域，其中第一部分与屏蔽电极重叠以便在其间限定存储电容器，并且第二部分覆盖平面有机层并且不与数据线重叠。

9. 发明申请

US20100296016A1 ARRAY SUBSTRATE, LIQUID CRYSTAL DISPLAY PANEL AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：阵列基板，液晶显示面板及其制造方法
公开(公告)号：US20100296016A1
公开(公告)日：2010-11-25
申请号：US12647300
申请日：2009-12-24
申请人： Yu-Cheng CHEN , Tsan-Chun Wang , Maw-Song Chen
发明人： Yu-Cheng CHEN , Tsan-Chun Wang , Maw-Song Chen
IPC分类号： G02F1/1343 , G02F1/13
CPC分类号： G02F1/136286
摘要： An active array substrate, a liquid crystal display panel and a method for manufacturing the active array substrate are provided. The active array substrate includes a base, scan lines, data lines and gate tracking lines disposed on the base. Each of the gate tracking lines has first portions, auxiliary portions and junction portions, wherein the junction portion and the first portion are formed in different layers. One of the junction portions is electrically connected with corresponding one of the first portions.
摘要翻译：提供有源阵列基板，液晶显示面板和制造有源阵列基板的方法。有源阵列基板包括设置在基座上的基极，扫描线，数据线和栅极跟踪线。每个栅极跟踪线具有第一部分，辅助部分和接合部分，其中接合部分和第一部分形成在不同的层中。一个接合部分与相应的一个第一部分电连接。

10. 发明授权

US08553193B2 Pixel structure and display panel having the same 有权
标题翻译：像素结构和显示面板相同
公开(公告)号：US08553193B2
公开(公告)日：2013-10-08
申请号：US12909831
申请日：2010-10-22
申请人： Ke-Chih Chang , Kuo-Yu Huang , Yu-Cheng Chen , Tsan-Chun Wang
发明人： Ke-Chih Chang , Kuo-Yu Huang , Yu-Cheng Chen , Tsan-Chun Wang
IPC分类号： G02F1/1343
CPC分类号： G02F1/13624 , G02F2001/13606
摘要： A pixel structure includes a first and a second scan lines, a data line, a first insulating layer covering the first and the second scan lines and a portion of the data line and having a recess, a second insulating layer covering the first insulating layer, a capacitor electrode line covering the data line and the recess, a third insulating layer on the capacitor electrode line, a first active device electrically connected to the second scan line and the data line, a second active device electrically connected to the first active device and the first scan line, and a first and a second pixel electrodes electrically connected to the first and the second active devices, respectively. The portion of the data line and the first and the second scan lines are in the same layer. The recess is located at two sides of the portion of the data line.
摘要翻译：像素结构包括第一和第二扫描线，数据线，覆盖第一和第二扫描线的第一绝缘层和数据线的一部分并具有凹部，覆盖第一绝缘层的第二绝缘层，覆盖数据线和凹部的电容器电极线，电容器电极线上的第三绝缘层，与第二扫描线和数据线电连接的第一有源器件，与第一有源器件电连接的第二有源器件，第一扫描线以及分别电连接到第一和第二有源器件的第一和第二像素电极。数据线和第一和第二扫描线的部分在同一层中。凹槽位于数据线部分的两侧。

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