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1. 发明申请

US20110159658A1 METHOD FOR FABRICATING METAL-OXIDE SEMICONDUCTOR TRANSISTORS 有权
标题翻译：制备金属氧化物半导体晶体管的方法
公开(公告)号：US20110159658A1
公开(公告)日：2011-06-30
申请号：US13043443
申请日：2011-03-08
申请人： Tsai-Fu Hsiao , Ching-I Li , Po-Yuan Chen , Chun-An Lin , Hsiang-Ying Wang , Chao-Chun Chen , Chin-Cheng Chien
发明人： Tsai-Fu Hsiao , Ching-I Li , Po-Yuan Chen , Chun-An Lin , Hsiang-Ying Wang , Chao-Chun Chen , Chin-Cheng Chien
IPC分类号： H01L21/265
CPC分类号： H01L21/324 , H01L21/265 , H01L21/2652 , H01L29/6659
摘要： A method for fabricating a metal-oxide semiconductor transistor is disclosed. The method includes the steps of: providing a semiconductor substrate; forming a gate structure on the semiconductor substrate; and performing a first ion implantation process to implant a first molecular cluster having carbon, boron, and hydrogen into the semiconductor substrate at two sides of the gate structure for forming a doped region, wherein the molecular weight of the first molecular cluster is greater than 100.
摘要翻译：公开了一种制造金属氧化物半导体晶体管的方法。该方法包括以下步骤：提供半导体衬底; 在所述半导体衬底上形成栅极结构; 以及执行第一离子注入工艺以在所述栅极结构的两侧将具有碳，硼和氢的第一分子簇注入到所述半导体衬底中，以形成掺杂区域，其中所述第一分子簇的分子量大于100 。

2. 发明申请

US20100033419A1 LIQUID CRYSTAL DISPLAY WITH COLUMN INVERSION DRIVING METHOD 审中-公开
标题翻译：液晶显示器与柱反转驱动方法
公开(公告)号：US20100033419A1
公开(公告)日：2010-02-11
申请号：US12242833
申请日：2008-09-30
申请人： Chun-An Lin
发明人： Chun-An Lin
IPC分类号： G09G3/36
CPC分类号： G09G3/3614 , G09G2310/063 , G09G2320/0257 , G09G2330/027
摘要： A liquid crystal display (LCD) with a column inversion driving method is provided. The LCD with the column inversion driving method includes a first data line, a second data line, and a first switch. The first switch is electrically connected to the first data line and the second data line. The first data line is adjacent to the second data line. When the LCD with the column inversion driving method is turned off, the first switch is turned on for conducting the first data line and the second data line, so as to neutralize the charges remained in pixels.
摘要翻译：提供了具有列反转驱动方法的液晶显示器（LCD）。具有列反转驱动方法的LCD包括第一数据线，第二数据线和第一开关。第一开关电连接到第一数据线和第二数据线。第一数据线与第二数据线相邻。当具有列反转驱动方法的LCD被关闭时，第一开关导通以进行第一数据线和第二数据线，以便中和剩余的像素中的电荷。

3. 发明申请

US20080061366A1 COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF 有权
标题翻译：补充金属氧化物半导体器件及其制造方法
公开(公告)号：US20080061366A1
公开(公告)日：2008-03-13
申请号：US11530480
申请日：2006-09-11
申请人： Che-Hung Liu , Po-Lun Cheng , Chun-An Lin , Li-Yuen Tang , Hung-Lin Shih , Ming-Chi Fan , Hsien-Liang Meng , Jih-Shun Chiang
发明人： Che-Hung Liu , Po-Lun Cheng , Chun-An Lin , Li-Yuen Tang , Hung-Lin Shih , Ming-Chi Fan , Hsien-Liang Meng , Jih-Shun Chiang
IPC分类号： H01L29/76
CPC分类号： H01L29/7843 , H01L21/823807 , H01L21/823814 , H01L21/823864 , H01L29/6656 , H01L29/6659 , H01L29/66636 , H01L29/7833 , H01L29/7834
摘要： A complementary metal-oxide-semiconductor (CMOS) device includes a substrate with a first active region and a second active region; a first gate structure and a second gate structure, respectively disposed on the first active region and the second active region; a first spacer structure and a second spacer structure respectively disposed on sidewalls of the first gate structure and the second gate structure; a first LDD and a second LDD respectively disposed in the substrate at both sides of the first gate structure and the second gate structure; an epitaxial material layer, disposed in the first active region and located on a side of the first LDD; and a passivation layer, disposed on the first gate structure, the first spacer structure, and the first LDD and covering the second active region, wherein the passivation layer comprises a carbon-containing oxynitride layer.
摘要翻译：互补金属氧化物半导体（CMOS）器件包括具有第一有源区和第二有源区的衬底; 分别设置在所述第一有源区和所述第二有源区上的第一栅极结构和第二栅极结构; 分别设置在第一栅极结构和第二栅极结构的侧壁上的第一间隔结构和第二间隔结构; 在第一栅极结构和第二栅极结构的两侧分别设置在基板中的第一LDD和第二LDD; 外延材料层，设置在第一有源区并位于第一LDD的一侧; 以及钝化层，设置在所述第一栅极结构上，所述第一间隔结构和所述第一LDD并且覆盖所述第二有源区，其中所述钝化层包含含碳氮氧化物层。

4. 发明申请

US20080055501A1 PIXEL STRUCTURE 有权
标题翻译：像素结构
公开(公告)号：US20080055501A1
公开(公告)日：2008-03-06
申请号：US11563036
申请日：2006-11-24
申请人： Chun-An Lin , Wen-Hsiung Liu
发明人： Chun-An Lin , Wen-Hsiung Liu
IPC分类号： G02F1/1343
CPC分类号： G02F1/136213 , G02F2001/13606 , G02F2201/40
摘要： A pixel structure using a U-shaped storage capacitance electrode for increasing the aperture ratio thereof is provided. The pixel structure may compensate a variation of the parasitic capacitance (Cgd) between gate and drain for the shift along Y-axis of an exposure machine, so as to reduce the variation of feed-through voltage of pixels.
摘要翻译：提供了一种使用U形存储电容电极来提高其开口率的像素结构。像素结构可以补偿沿着曝光机的Y轴移动的栅极和漏极之间的寄生电容（Cgd）的变化，以便减小像素的馈通电压的变化。

5. 发明授权

US07733431B2 Laser repair structure and method for TFT-LCD 有权
标题翻译： TFT-LCD激光修复结构及方法
公开(公告)号：US07733431B2
公开(公告)日：2010-06-08
申请号：US12173031
申请日：2008-07-15
申请人： Chun-An Lin
发明人： Chun-An Lin
IPC分类号： G02F1/1334
CPC分类号： H01L27/124 , G02F1/136259
摘要： A laser repair structure and method for TFT panel. A first metal conductor is located in the source-drain layer and having a contact hole to the pixel electrode, and the region of the first metal conductor is within the region of the storage capacitance line. To repair a white defect of a pixel, make extending portions of the first metal conductor to overlap with the gate line of the previous pixel so as to electrically connect them by the laser irradiation. Another choice is setting two second metal conductors located in the gate-electrode layer and partially overlapped with the data line and the first conductor separately, then using laser irradiation to electrically connect one second metal conductor to repair the white defect of a pixel or electrically connect two second metal conductors to repair an open-circuited data line.
摘要翻译：一种用于TFT面板的激光修复结构和方法。第一金属导体位于源极 - 漏极层中并且具有与像素电极的接触孔，并且第一金属导体的区域在辅助电容线的区域内。为了修复像素的白色缺陷，使第一金属导体的延伸部分与先前像素的栅极线重叠，以便通过激光照射将它们电连接。另一选择是设置位于栅电极层中的两个第二金属导体，并与数据线和第一导体分别部分地重叠，然后使用激光照射来电连接一个第二金属导体以修复像素的白色缺陷或电连接两个第二个金属导体来修复开路数据线。

6. 发明申请

US20080266481A1 LASER REPAIR STRUCTURE AND METHOD FOR TFT-LCD 有权
标题翻译：用于TFT-LCD的激光修复结构和方法
公开(公告)号：US20080266481A1
公开(公告)日：2008-10-30
申请号：US12173031
申请日：2008-07-15
申请人： Chun-An Lin
发明人： Chun-An Lin
IPC分类号： G02F1/133
CPC分类号： H01L27/124 , G02F1/136259
摘要： A laser repair structure and method for TFT panel. A first metal conductor is located in the source-drain layer and having a contact hole to the pixel electrode, and the region of the first metal conductor is within the region of the storage capacitance line. To repair a white defect of a pixel, make extending portions of the first metal conductor to overlap with the gate line of the previous pixel so as to electrically connect them by the laser irradiation. Another choice is setting two second metal conductors located in the gate-electrode layer and partially overlapped with the data line and the first conductor separately, then using laser irradiation to electrically connect one second metal conductor to repair the white defect of a pixel or electrically connect two second metal conductors to repair an open-circuited data line.
摘要翻译：一种用于TFT面板的激光修复结构和方法。第一金属导体位于源极 - 漏极层中并且具有与像素电极的接触孔，并且第一金属导体的区域在辅助电容线的区域内。为了修复像素的白色缺陷，使第一金属导体的延伸部分与先前像素的栅极线重叠，以便通过激光照射将它们电连接。另一选择是设置位于栅电极层中的两个第二金属导体，并与数据线和第一导体分别部分地重叠，然后使用激光照射来电连接一个第二金属导体以修复像素的白色缺陷或电连接两个第二个金属导体来修复开路数据线。

7. 发明授权

US07329591B2 Method for forming silicon-containing film and method for decreasing number of particles 有权
标题翻译：用于形成含硅膜的方法和减少颗粒数的方法
公开(公告)号：US07329591B2
公开(公告)日：2008-02-12
申请号：US11358971
申请日：2006-02-21
申请人： Che-Hung Liu , Po-Lun Cheng , Hwei-Lin Chuang , Chun-An Lin
发明人： Che-Hung Liu , Po-Lun Cheng , Hwei-Lin Chuang , Chun-An Lin
IPC分类号： C23C16/24
CPC分类号： C23C16/325 , C23C16/345 , C23C16/402 , C23C16/4411 , H01L21/0217 , H01L21/02271 , H01L21/3145 , H01L21/31612 , H01L21/31625 , H01L21/31629 , H01L21/3185
摘要： A method for forming a silicon-containing film is described. A substrate is placed in a reaction chamber, and then a silicon-containing gas is introduced into the reaction chamber to conduct a CVD process and deposit a silicon-containing film on the substrate. During the CVD process, the temperature of at least the top inner surface of the reaction chamber is controlled below 50° C.
摘要翻译：描述了形成含硅膜的方法。将基板放置在反应室中，然后将含硅气体引入反应室中以进行CVD工艺，并在基板上沉积含硅膜。在CVD过程中，将反应室的至少顶部内表面的温度控制在低于50℃。

8. 发明申请

US20130267077A1 METHOD AND SYSTEM FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：用于制造半导体器件的方法和系统
公开(公告)号：US20130267077A1
公开(公告)日：2013-10-10
申请号：US13439888
申请日：2012-04-05
申请人： Ming-Hwei Hong , Ray-Nien Kwo , Tun-Wen Pi , Mao-Lin Huang , Yu-Hsing Chang , Pen Chang , Chun-An Lin , Tsung-Da Lin
发明人： Ming-Hwei Hong , Ray-Nien Kwo , Tun-Wen Pi , Mao-Lin Huang , Yu-Hsing Chang , Pen Chang , Chun-An Lin , Tsung-Da Lin
IPC分类号： H01L21/20 , C23C16/06 , C23C16/52 , C23C16/458
CPC分类号： C23C14/568 , C23C16/45544 , C23C16/54 , H01L21/02178 , H01L21/02181 , H01L21/02194 , H01L21/022 , H01L21/0228 , H01L21/28264 , H01L29/517
摘要： The present invention provides a system and method for manufacturing a semiconductor device including a substrate and a high-κ dielectric layer on the substrate. The system comprises a modular track; a substrate-forming chamber connected with the modular track for forming the substrate; and an atomic layer deposition (ALD) chamber connected with the modular track for providing the high-κ dielectric layer.
摘要翻译：本发明提供了一种用于制造半导体器件的系统和方法，所述半导体器件包括在衬底上的衬底和高k电介质层。该系统包括模块化轨道; 与用于形成衬底的模块化轨道连接的衬底形成室; 以及与模块化轨道连接的原子层沉积（ALD）室，用于提供高k电介质层。

9. 发明授权

US08053847B2 Method for fabricating metal-oxide semiconductor transistors 有权
标题翻译：金属氧化物半导体晶体管的制造方法
公开(公告)号：US08053847B2
公开(公告)日：2011-11-08
申请号：US12324896
申请日：2008-11-28
申请人： Tsai-Fu Hsiao , Ching-I Li , Po-Yuan Chen , Chun-An Lin , Hsiang-Ying Wang , Chao-Chun Chen , Chin-Cheng Chien
发明人： Tsai-Fu Hsiao , Ching-I Li , Po-Yuan Chen , Chun-An Lin , Hsiang-Ying Wang , Chao-Chun Chen , Chin-Cheng Chien
IPC分类号： H01L21/02
CPC分类号： H01L21/324 , H01L21/265 , H01L21/2652 , H01L29/6659
摘要： A method for fabricating a metal-oxide semiconductor transistor is disclosed. First, a semiconductor substrate having a gate structure thereon is provided, and a spacer is formed around the gate structure. An ion implantation process is performed to implant a molecular cluster containing carbon, boron, and hydrogen into the semiconductor substrate at two sides of the spacer for forming a doped region. The molecular weight of the molecular cluster is preferably greater than 100. Thereafter, a millisecond annealing process is performed to activate the molecular cluster within the doped region.
摘要翻译：公开了一种制造金属氧化物半导体晶体管的方法。首先，提供其上具有栅极结构的半导体衬底，并且在栅极结构周围形成间隔物。进行离子注入工艺以在分隔体的两侧将含有碳，硼和氢的分子簇注入到半导体衬底中，以形成掺杂区域。分子簇的分子量优选大于100.此后，进行毫秒退火处理以激活掺杂区域内的分子簇。

10. 发明申请

US20090101894A1 METHOD FOR FABRICATING METAL-OXIDE SEMICONDUCTOR TRANSISTORS 有权
标题翻译：制备金属氧化物半导体晶体管的方法
公开(公告)号：US20090101894A1
公开(公告)日：2009-04-23
申请号：US12324896
申请日：2008-11-28
申请人： Tsai-Fu Hsiao , Ching-I Li , Po-Yuan Chen , Chun-An Lin , Hsiang-Ying Wang , Chao-Chun Chen , Chin-Cheng Chien
发明人： Tsai-Fu Hsiao , Ching-I Li , Po-Yuan Chen , Chun-An Lin , Hsiang-Ying Wang , Chao-Chun Chen , Chin-Cheng Chien
IPC分类号： H01L29/78 , H01L21/336 , H01L35/24 , H01L51/40
CPC分类号： H01L21/324 , H01L21/265 , H01L21/2652 , H01L29/6659
摘要： A method for fabricating a metal-oxide semiconductor transistor is disclosed. First, a semiconductor substrate having a gate structure thereon is provided, and a spacer is formed around the gate structure. An ion implantation process is performed to implant a molecular cluster containing carbon, boron, and hydrogen into the semiconductor substrate at two sides of the spacer for forming a doped region. The molecular weight of the molecular cluster is preferably greater than 100. Thereafter, a millisecond annealing process is performed to activate the molecular cluster within the doped region.
摘要翻译：公开了一种制造金属氧化物半导体晶体管的方法。首先，提供其上具有栅极结构的半导体衬底，并且在栅极结构周围形成间隔物。进行离子注入工艺以在分隔体的两侧将含有碳，硼和氢的分子簇注入到半导体衬底中，以形成掺杂区域。分子簇的分子量优选大于100.此后，进行毫秒退火处理以激活掺杂区域内的分子簇。

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