专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07608853B2 Semiconductor light emitting diode that uses silicon nano dot and method of manufacturing the same 有权
标题翻译：使用硅纳米点的半导体发光二极管及其制造方法
公开(公告)号：US07608853B2
公开(公告)日：2009-10-27
申请号：US12278331
申请日：2008-06-27
申请人： Chul Huh , Rae-Man Park , Jae-Heon Shin , Kyung-Hyun Kim , Tae-Youb Kim , Kwan-Sik Cho , Gun-Yong Sung
发明人： Chul Huh , Rae-Man Park , Jae-Heon Shin , Kyung-Hyun Kim , Tae-Youb Kim , Kwan-Sik Cho , Gun-Yong Sung
IPC分类号： H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L29/22 , H01L33/00 , H01L21/00 , H01L21/26 , H01L21/324 , H01L21/42 , H01L21/477
CPC分类号： H01L33/34 , B82Y20/00 , H01L33/18 , Y10S438/962 , Y10S977/773 , Y10S977/774
摘要： Provided is a semiconductor light emitting diode that uses a silicon nano dot and a method of manufacturing the same. The semiconductor light emitting diode includes a light emitting layer that emits light; a hole injection layer formed on the light emitting layer; an electron injection layer formed on the light emitting layer to face the hole injection layer; a metal layer that includes a metal nano dot and is formed on the electron injection layer; and a transparent conductive electrode formed on the metal layer. Amorphous silicon nitride that includes the silicon nano dot is used as the light emitting layer.
摘要翻译：提供了使用硅纳米点的半导体发光二极管及其制造方法。半导体发光二极管包括发光的发光层; 形成在发光层上的空穴注入层; 形成在所述发光层上以与所述空穴注入层相对的电子注入层; 包含金属纳米点并形成在电子注入层上的金属层; 和形成在金属层上的透明导电电极。使用包含硅纳米点的无定形氮化硅作为发光层。

2. 发明申请

US20090032836A1 SEMICONDUCTOR LIGHT EMITTING DIODE THAT USES SILICON NANO DOT AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：使用硅纳米管的半导体发光二极管及其制造方法
公开(公告)号：US20090032836A1
公开(公告)日：2009-02-05
申请号：US12278331
申请日：2008-06-27
申请人： Chul Huh , Rae-Man Park , Jae-Heon Shin , Kyung-Hyun Kim , Tae-Youb Kim , Kwan-Sik Cho , Gun-Yong Sung
发明人： Chul Huh , Rae-Man Park , Jae-Heon Shin , Kyung-Hyun Kim , Tae-Youb Kim , Kwan-Sik Cho , Gun-Yong Sung
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/34 , B82Y20/00 , H01L33/18 , Y10S438/962 , Y10S977/773 , Y10S977/774
摘要： Provided is a semiconductor light emitting diode that uses a silicon nano dot and a method of manufacturing the same. The semiconductor light emitting diode includes a light emitting layer that emits light; a hole injection layer formed on the light emitting layer; an electron injection layer formed on the light emitting layer to face the hole injection layer; a metal layer that comprises a metal nano dot and is formed on the electron injection layer; and a transparent conductive electrode formed on the metal layer. Amorphous silicon nitride that includes the silicon nano dot is used as the light emitting layer.
摘要翻译：提供了使用硅纳米点的半导体发光二极管及其制造方法。半导体发光二极管包括发光的发光层; 形成在发光层上的空穴注入层; 形成在所述发光层上以与所述空穴注入层相对的电子注入层; 金属层，其包含金属纳米点，并形成在电子注入层上; 和形成在金属层上的透明导电电极。使用包含硅纳米点的无定形氮化硅作为发光层。

3. 发明授权

US07772587B2 Silicon-based light emitting diode for enhancing light extraction efficiency and method of fabricating the same 有权
标题翻译：用于提高光提取效率的硅基发光二极管及其制造方法
公开(公告)号：US07772587B2
公开(公告)日：2010-08-10
申请号：US12096764
申请日：2006-03-14
申请人： Kyung Hyun Kim , Nae Man Park , Chul Huh , Tae Youb Kim , Jae Heon Shin , Kwan Sik Cho , Gun Yong Sung
发明人： Kyung Hyun Kim , Nae Man Park , Chul Huh , Tae Youb Kim , Jae Heon Shin , Kwan Sik Cho , Gun Yong Sung
IPC分类号： H01L29/06 , H01L21/00
CPC分类号： H01L33/44 , H01L33/10 , H01L33/20 , H01L33/22 , H01L33/34 , H01L33/38 , H01L2933/0091
摘要： Due to the indirect transition characteristic of silicon semiconductors, the light extraction efficiency of a silicon-based light emitting diode is lower than that of a compound semiconductor-based light emitting diode. For this reason, there are difficulties in practically using and commercializing silicon-based light emitting diodes developed so far. Provided is a silicon-based light emitting including: a substrate with a lower electrode layer on a lower surface thereof; a lower doped layer that is formed on an upper surface of the substrate and supplies carriers to an emitting layer; the emitting layer that is a silicon semiconductor layer including silicon quantum dots or nanodots formed on the lower doped layer and has a light-emitting characteristic; an upper doped layer that is formed on the emitting layer and supplies carriers to the emitting layer; an upper electrode layer formed on the upper doped layer; and a surface structure including a surface pattern formed on the upper electrode layer, a surface structure including an upper electrode pattern and an upper doped pattern formed by patterning the upper electrode layer and the upper doped layer, or a surface structure including the surface pattern, the upper electrode pattern, and upper doped pattern, wherein the surface structure enhances the light extraction efficiency of light emitted from the emitting layer according to geometric optics.
摘要翻译：由于硅半导体的间接跃迁特性，硅基发光二极管的光提取效率低于基于化合物半导体的发光二极管的光提取效率。因此，实际上使用和商业化目前为止开发的硅基发光二极管存在困难。本发明提供一种硅基发光体，具有：下表面具有下电极层的基板; 下部掺杂层，其形成在所述衬底的上表面上并将载体提供给发光层; 所述发光层是包含形成在所述下掺杂层上的硅量子点或纳米点的具有发光特性的硅半导体层; 上部掺杂层，其形成在所述发光层上并将载流子提供给所述发光层; 形成在上掺杂层上的上电极层; 以及包括形成在上电极层上的表面图案的表面结构，包括通过图案化上电极层和上掺杂层形成的上电极图案和上掺杂图案的表面结构，或包括表面图案的表面结构，上电极图案和上掺杂图案，其中表面结构根据几何光学增强了从发光层发射的光的光提取效率。

4. 发明申请

US20080303018A1 Silicon-Based Light Emitting Diode for Enhancing Light Extraction Efficiency and Method of Fabricating the Same 有权
标题翻译：用于提高光提取效率的硅基发光二极管及其制造方法
公开(公告)号：US20080303018A1
公开(公告)日：2008-12-11
申请号：US12096764
申请日：2006-03-14
申请人： Kyung Hyun Kim , Nae Man Park , Chul Huh , Tae Youb Kim , Jae Heon Shin , Kwan Sik Cho , Gun Yong Sung
发明人： Kyung Hyun Kim , Nae Man Park , Chul Huh , Tae Youb Kim , Jae Heon Shin , Kwan Sik Cho , Gun Yong Sung
IPC分类号： H01L29/06 , H01L21/00
CPC分类号： H01L33/44 , H01L33/10 , H01L33/20 , H01L33/22 , H01L33/34 , H01L33/38 , H01L2933/0091
摘要： Due to the indirect transition characteristic of silicon semiconductors, the light extraction efficiency of a silicon-based light emitting diode is lower than that of a compound semiconductor-based light emitting diode. For this reason, there are difficulties in practically using and commercializing silicon-based light emitting diodes developed so far. Provided is a silicon-based light emitting including: a substrate with a lower electrode layer on a lower surface thereof; a lower doped layer that is formed on an upper surface of the substrate and supplies carriers to an emitting layer; the emitting layer that is a silicon semiconductor layer including silicon quantum dots or nanodots formed on the lower doped layer and has a light-emitting characteristic; an upper doped layer that is formed on the emitting layer and supplies carriers to the emitting layer; an upper electrode layer formed on the upper doped layer; and a surface structure including a surface pattern formed on the upper electrode layer, a surface structure including an upper electrode pattern and an upper doped pattern formed by patterning the upper electrode layer and the upper doped layer, or a surface structure including the surface pattern, the upper electrode pattern, and upper doped pattern, wherein the surface structure enhances the light extraction efficiency of light emitted from the emitting layer according to geometric optics.
摘要翻译：由于硅半导体的间接跃迁特性，硅基发光二极管的光提取效率低于基于化合物半导体的发光二极管的光提取效率。因此，实际上使用和商业化目前为止开发的硅基发光二极管存在困难。本发明提供一种硅基发光体，具有：下表面具有下电极层的基板; 下部掺杂层，其形成在所述衬底的上表面上并将载体提供给发光层; 所述发光层是包含形成在所述下掺杂层上的硅量子点或纳米点的具有发光特性的硅半导体层; 上部掺杂层，其形成在所述发光层上并将载流子提供给所述发光层; 形成在上掺杂层上的上电极层; 以及包括形成在上电极层上的表面图案的表面结构，包括通过图案化上电极层和上掺杂层形成的上电极图案和上掺杂图案的表面结构，或包括表面图案的表面结构，上电极图案和上掺杂图案，其中表面结构根据几何光学增强了从发光层发射的光的光提取效率。

5. 发明授权

US08275008B2 Wavelength tunable semiconductor laser apparatus 失效
标题翻译：波长可调半导体激光装置
公开(公告)号：US08275008B2
公开(公告)日：2012-09-25
申请号：US12745514
申请日：2008-04-02
申请人： Hyun Sung Ko , Chul Huh , Kyung Hyun Kim , Jong Cheol Hong , Wan Joong Kim , Gun Yong Sung , Seon Hee Park
发明人： Hyun Sung Ko , Chul Huh , Kyung Hyun Kim , Jong Cheol Hong , Wan Joong Kim , Gun Yong Sung , Seon Hee Park
IPC分类号： H01S3/10
CPC分类号： H01S5/0261 , H01S5/0612 , H01S5/1085 , H01S5/183 , H01S5/4031
摘要： A semiconductor laser apparatus is provided which can vary an output wavelength of a light source. A semiconductor laser diode and one or more heat source devices arranged around the semiconductor laser diode are integrated on one substrate. The semiconductor laser diode is configured to be uniformly heated by the heat source device. An output wavelength of the semiconductor laser diode can be easily and quickly varied.
摘要翻译：提供一种能够改变光源的输出波长的半导体激光装置。半导体激光二极管和设置在半导体激光二极管周围的一个或多个热源器件集成在一个衬底上。半导体激光二极管被构造成由热源装置均匀地加热。半导体激光二极管的输出波长可以容易且快速地变化。

6. 发明授权

US08345248B2 Optical cavity enhanced turbidimeter and turbidity measuring method 有权
标题翻译：光腔增强浊度计和浊度测量方法
公开(公告)号：US08345248B2
公开(公告)日：2013-01-01
申请号：US12808237
申请日：2008-07-29
申请人： Jong-Cheol Hong , Gun Yong Sung , Sun-Hee Park , Kyung-Hyun Kim , Chul Huh , Hyun-Sung Ko , Wan-Joong Kim
发明人： Jong-Cheol Hong , Gun Yong Sung , Sun-Hee Park , Kyung-Hyun Kim , Chul Huh , Hyun-Sung Ko , Wan-Joong Kim
IPC分类号： G01N21/00
CPC分类号： G01N21/534 , G01N15/06 , G01N2015/0693
摘要： Provided are an optical cavity enhanced turbidimeter and a turbidity measure method. After casting a pulse beam or a beam having a steep intensity gradient into an optical cavity, the turbidity of the inside region of the optical cavity can be calculated using an attenuation rate of an output beam from the optical cavity.
摘要翻译：提供了一种光学腔增强浊度计和浊度测量方法。将脉冲光束或具有陡峭强度梯度的光束投射到光学腔中之后，可以使用来自光学腔的输出光束的衰减率来计算光学腔的内部区域的浊度。

7. 发明授权

US08292608B2 Apparatus for fixing plastic sheet and method of fabricating nano pattern on plastic sheet using the same 有权
标题翻译：用于固定塑料片的装置和使用其制造在塑料片上的纳米图案的方法
公开(公告)号：US08292608B2
公开(公告)日：2012-10-23
申请号：US12743117
申请日：2008-05-21
申请人： Kyung Hyun Kim , Chul Huh , Hyun Sung Ko , Jong Cheol Hong , Wan Joong Kim , Gun Yong Sung , Seon Hee Park
发明人： Kyung Hyun Kim , Chul Huh , Hyun Sung Ko , Jong Cheol Hong , Wan Joong Kim , Gun Yong Sung , Seon Hee Park
IPC分类号： B29C43/32
CPC分类号： H01L21/6838 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： There are provided an apparatus for fixing a plastic sheet which fixes a plastic sheet to fabricate a nano pattern and a method of fabricating a nano pattern on a plastic sheet using the same. The apparatus for fixing a plastic sheet includes: a pair of planar metal guide rings interposingly fixing a plastic sheet from above and below, respectively; and a sheet fixing chuck including: a ring fixer sucking the pair of planar metal guide rings through a vacuum groove to be fixed thereto; and a sheet fixer having a plurality of vacuum pin holes formed therein, the vacuum pin holes sucking a bottom of the plastic sheet fixed by the planar metal guide rings. The apparatus allows fabrication of the nano pattern on the plastic sheet having less roughness than that of a semiconductor substrate or a glass substrate.
摘要翻译：提供了一种用于固定塑料片以制造纳米图案的塑料片的设备和使用其形成在塑料片上的纳米图案的方法。用于固定塑料片的装置包括：分别从上下固定塑料片的一对平面金属导向环; 以及片状固定卡盘，其包括：环形固定器，其通过真空槽吸附所述一对平面金属导向环以固定到其上; 以及具有形成在其中的多个真空针孔的片固定器，所述真空针孔吸附由所述平面金属导向环固定的所述塑料片的底部。该装置允许在塑料片上制造具有比半导体衬底或玻璃衬底更小的粗糙度的纳米图案。

8. 发明授权

US08199325B2 Apparatus for detecting biomaterials and method for detecting biomaterials by using the apparatus 失效
标题翻译：用于检测生物材料的装置和通过使用该装置检测生物材料的方法
公开(公告)号：US08199325B2
公开(公告)日：2012-06-12
申请号：US12534464
申请日：2009-08-03
申请人： Wanjoong Kim , Chul Huh , Hyunsung Ko , Kyung Hyun Kim , Gun Yong Sung , Seon Hee Park , Bong Kyu Kim , Chil Seong Ah , Ansoon Kim
发明人： Wanjoong Kim , Chul Huh , Hyunsung Ko , Kyung Hyun Kim , Gun Yong Sung , Seon Hee Park , Bong Kyu Kim , Chil Seong Ah , Ansoon Kim
IPC分类号： G01N21/55
CPC分类号： G01N21/554 , G01N21/33
摘要： Provided are an apparatus and method for detecting biomaterials. The apparatus for detecting the biomaterials includes a light source unit, a biomaterial reacting unit, and a detection unit detecting. The light source unit provides incident light. The biomaterial reacting unit includes a substrate and metal nanoparticles spaced from the substrate. The surface plasmon resonance phenomenon is induced on surfaces of the metal nanoparticles by the incident light. First detecting molecules specifically binding to target molecules are immobilized to the surfaces of the metal nanoparticles. The detection unit detects a resonance wavelength of emission light emitted from the metal nanoparticles by the surface plasmon resonance phenomenon.
摘要翻译：提供了用于检测生物材料的装置和方法。用于检测生物材料的装置包括光源单元，生物材料反应单元和检测单元检测。光源单元提供入射光。生物材料反应单元包括与衬底间隔开的衬底和金属纳米颗粒。通过入射光在金属纳米颗粒的表面上诱导表面等离子体共振现象。首先检测与靶分子特异性结合的分子被固定在金属纳米粒子的表面。检测单元通过表面等离子体共振现象检测从金属纳米颗粒发射的发射光的共振波长。

9. 发明授权

US08018595B2 Apparatus for detecting bio materials and method for detecting bio materials by using the apparatus 有权
标题翻译：用于检测生物材料的装置和使用该装置检测生物材料的方法
公开(公告)号：US08018595B2
公开(公告)日：2011-09-13
申请号：US12406851
申请日：2009-03-18
申请人： Chul Huh , Kyung Hyun Kim , Hyunsung Ko , Wanjoong Kim , Gun Yong Sung , Seon-Hee Park , Bong-Kyu Kim
发明人： Chul Huh , Kyung Hyun Kim , Hyunsung Ko , Wanjoong Kim , Gun Yong Sung , Seon-Hee Park , Bong-Kyu Kim
IPC分类号： G01N21/00
CPC分类号： G01N21/77 , G01N21/554 , G01N2021/7783
摘要： Provided is an apparatus for detecting bio materials and a method for detecting bio materials by using the apparatus. The apparatus includes a bio material reacting unit, an optical source unit, and a detecting unit. The bio material reacting unit includes bio sensing materials immobilized on gold nanoparticles. The optical source unit emits light toward the bio material reacting unit. The detecting unit measures variations of surface absorbance of the gold nanoparticles by detecting light transmitted through the bio material reacting unit before and after a bio material is bound to the bio sensing materials.
摘要翻译：提供了一种用于检测生物材料的装置和通过使用该装置检测生物材料的方法。该装置包括生物材料反应单元，光源单元和检测单元。生物材料反应单元包括固定在金纳米颗粒上的生物传感材料。光源单元向生物材料反应单元发射光。检测单元通过在生物材料结合到生物传感材料之前和之后检测透过生物材料反应单元的光来测量金纳米颗粒的表面吸光度的变化。

10. 发明申请

US20100296095A1 OPTICAL CAVITY ENHANCED TURBIDIMETER AND TURBIDITY MEASURING METHOD 有权
标题翻译：光学加速度涡轮增压和涡度测量方法
公开(公告)号：US20100296095A1
公开(公告)日：2010-11-25
申请号：US12808237
申请日：2008-07-29
申请人： Jong-Cheol Hong , Gun Yong Sung , Sun-Hee Park , Kyung-Hyun Kim , Chul Huh , Hyun-Sung Ko , Wan-Joong Kim
发明人： Jong-Cheol Hong , Gun Yong Sung , Sun-Hee Park , Kyung-Hyun Kim , Chul Huh , Hyun-Sung Ko , Wan-Joong Kim
IPC分类号： G01N21/00
CPC分类号： G01N21/534 , G01N15/06 , G01N2015/0693
摘要： Provided are an optical cavity enhanced turbidimeter and a turbidity measure method. After casting a pulse beam or a beam having a steep intensity gradient into an optical cavity, the turbidity of the inside region of the optical cavity can be calculated using an attenuation rate of an output beam from the optical cavity.
摘要翻译：提供了一种光学腔增强浊度计和浊度测量方法。将脉冲光束或具有陡峭强度梯度的光束投射到光学腔中之后，可以使用来自光学腔的输出光束的衰减率来计算光学腔的内部区域的浊度。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式