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1. 发明授权

US06278162B1 ESD protection for LDD devices 失效
标题翻译： LDD器件的ESD保护
公开(公告)号：US06278162B1
公开(公告)日：2001-08-21
申请号：US08342781
申请日：1994-11-21
申请人： Chuen-Der Lien , Paul Y. M. Shy
发明人： Chuen-Der Lien , Paul Y. M. Shy
IPC分类号： H01L2976
CPC分类号： H01L29/66659 , H01L27/0266 , H01L29/1045 , H01L29/7835
摘要： A semiconductor integrated circuit suitable for use in an ESD protection circuit is disclosed. A substrate has an active region formed therein so as to define a P/N junction therebetween. An insulating region is formed near the surface of the substrate adjacent the active region thus defining an edge therewith. The active region includes a highly doped portion formed near the surface of the substrate and near the edge of the insulating region and a lightly doped portion formed below the highly doped portion and separated from the edge of the insulating portion. By moving the highly doped portion of the active region away from the insulating region, the P/N junction is effectively moved away from the insulating region.
摘要翻译：公开了一种适用于ESD保护电路的半导体集成电路。衬底具有形成在其中的有源区，以便在它们之间限定P / N结。绝缘区域形成在邻近有源区的衬底的表面附近，从而与其形成边缘。有源区包括在衬底的表面附近形成并在绝缘区的边缘附近形成的高掺杂部分，以及形成在高掺杂部分下方并与绝缘部分的边缘分离的轻掺杂部分。通过将有源区域的高掺杂部分移动离开绝缘区域，P / N结有效地远离绝缘区域移动。

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