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1. 发明专利

JP2013014478A Carbon nanowall array and method for producing carbon nanowall 有权
标题翻译：碳纳米管阵列和生产碳纳米管的方法
公开(公告)号：JP2013014478A
公开(公告)日：2013-01-24
申请号：JP2011149002
申请日：2011-07-05
申请人： Chube Univ , 学校法人中部大学 , Hokkaido Univ , 国立大学法人北海道大学 , Osaka Univ , 国立大学法人大阪大学 , Nissin Electric Co Ltd , 日新電機株式会社
发明人： KAWAHARA TOSHIO , OKAMOTO KAZUMASA , MATSUMOTO KAZUHIKO , UTSUNOMIYA RISA , MATSUBA TERUAKI , MATSUMOTO HITOSHI
IPC分类号： C01B31/02
CPC分类号： C01B31/0293 , B82Y30/00 , B82Y40/00 , C01B32/18 , Y10T428/24612
摘要： PROBLEM TO BE SOLVED: To provide a carbon nanowall array in which carbon nanowalls can be orientated along a desired pattern.SOLUTION: This carbon nanowall array 10 includes: a substrate 1; and carbon nanowalls 2 to 9. The substrate 1 is made of silicon. And the substrate 1 includes a convex section 11 and a concave section 12. The convex section 11 and the concave section 12 are formed on one surface of the substrate 1 along a direction DR1. The convex section 11 and the concave section 12 are alternately formed in a direction DR2 which is perpendicular to the direction DR1. The convex section 11 is 0.1 to 0.5 μm long in the direction DR2, and the concave section 12 is 0.6 to 1.5 μm long in the direction DR2. Also, the convex section 11 is 0.3 to 0.6 μm high. Each of the carbon nanowalls 2 to 9 is formed on the convex section 11 along the longitudinal direction (= direction DR1) of the convex section 11 of the substrate 1.
摘要翻译：要解决的问题：提供碳纳米壁阵列，其中碳纳米壁可以沿着所需图案取向。解决方案：该碳纳米壁阵列10包括：基板1; 和碳纳米管2至9.基底1由硅制成。基板1包括凸部11和凹部12.凸部11和凹部12沿着方向DR1形成在基板1的一个面上。凸部11和凹部12在垂直于方向DR1的方向DR2交替地形成。凸部11在DR2方向上长0.1〜0.5μm，凹部12在DR2方向上长0.6〜1.5μm。此外，凸部11的高度为0.3〜0.6μm。每个碳纳米管2至9沿着基板1的凸部11的纵向（=方向DR1）形成在凸部11上。版权所有：（C）2013，JPO＆INPIT

2. 发明专利

JP2014175418A Thin film transistor and manufacturing method of the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：JP2014175418A
公开(公告)日：2014-09-22
申请号：JP2013045952
申请日：2013-03-07
申请人： Chube Univ , 学校法人中部大学 , Hokkaido Univ , 国立大学法人北海道大学 , Osaka Univ , 国立大学法人大阪大学 , Nissin Electric Co Ltd , 日新電機株式会社
发明人： KAWAHARA TOSHIO , OKAMOTO KAZUMASA , MATSUMOTO KAZUHIKO , UTSUNOMIYA RISA , MATSUBA TERUAKI , MATSUMOTO HITOSHI
IPC分类号： H01L29/786 , H01L21/205 , H01L21/336 , H01L29/78 , H01L51/05 , H01L51/30 , H01L51/40
CPC分类号： H01L29/0665 , H01L29/1606 , H01L29/66742 , H01L29/778 , H01L29/78603 , H01L29/78684 , H01L51/0045 , H01L51/0558
摘要： PROBLEM TO BE SOLVED: To provide a thin film transistor which can reduce a driving voltage.SOLUTION: A thin film transistor 10 comprises a silicon substrate 1, a channel layer 2, a source electrode 3, a drain electrode 4, an insulation film 5 and a gate electrode 6. The channel layer 2, the source electrode 3 and the drain electrode 4 are linearly arranged on the raised portions of an uneven shape of the silicon substrate 1 along a lengthwise direction of the raised portions. The channel layer 2 is composed of a carbon nanowall thin film. The source electrode 3 and the drain electrode 4 are composed of metal carbon nanowall thin films. The insulation film 5 is composed of SiOand arranged in contact with a rear face of the silicon substrate 1. The gate electrode 6 is composed of a lamination structure of Ti/Au and arranged in contact with the insulation film 5.
摘要翻译：要解决的问题：提供可以降低驱动电压的薄膜晶体管。解决方案：薄膜晶体管10包括硅衬底1，沟道层2，源电极3，漏电极4，绝缘膜5 沟道层2，源电极3和漏极电极4沿着凸起部分的长度方向线性地布置在硅衬底1的不平坦形状的凸起部分上。沟道层2由碳纳米壁薄膜构成。源电极3和漏电极4由金属碳纳米壁薄膜构成。绝缘膜5由SiO构成，与硅衬底1的背面接触。栅电极6由Ti / Au层压结构构成，与绝缘膜5相接触。

3. 发明专利

JP2013080798A Thermoelectrically cooled current lead 有权
标题翻译：热电冷却电流引线
公开(公告)号：JP2013080798A
公开(公告)日：2013-05-02
申请号：JP2011219575
申请日：2011-10-03
申请人： Chube Univ , 学校法人中部大学 , Swcc Showa Cable Systems Co Ltd , 昭和電線ケーブルシステム株式会社
发明人： YAMAGUCHI SAKUTARO , KAWAHARA TOSHIO , HIKICHI YASUO , SUGANE HIDEO , MINOWA MASAHIRO
IPC分类号： H01L35/32 , H01L35/16 , H01L39/04
CPC分类号： H01L35/16 , H01L35/32 , H01L39/14
摘要： PROBLEM TO BE SOLVED: To prevent breakage of/damage to a junction of a thermoelectric semiconductor element and an electrode by reducing an in-plane shearing stress acting on the junction.SOLUTION: A thermoelectrically cooled current lead 200 includes a thermoelectric semiconductor element 220, and a heat generation side current terminal 210 and a heat absorption side current terminal 230 that are electrodes connected to both ends of current conduction of the thermoelectric semiconductor element 220. The thermoelectrically cooled current lead 200 has an end portion 211 divided into four regions by slits 212, 213 to form four junction faces 214a-d. The heat absorption side current terminal 230 has an end portion 231 divided into four regions by slits 232, 233 to form four junction faces 234a-d. The thermoelectric semiconductor element 220 is divided into four in correspondence to the division of the end portion 211 of the heat generation side current terminal 210 and the end portion 231 of the heat absorption side current terminal 230. The junction faces opposite to each other are soldered or otherwise joined together.
摘要翻译：要解决的问题：通过降低作用在接合点上的面内剪切应力来防止热电半导体元件和电极的接合部的破坏/损坏。解决方案：热电冷却电流引线200包括热电半导体元件220和作为连接到热电半导体元件220的电流导通两端的电极的发热侧电流端子210和吸热侧电流端子230 热电冷却电流引线200具有通过狭缝212,213分成四个区域的端部211，形成四个接合面214a-d。吸热侧电流端子230具有通过狭缝232,233分割成四个区域的端部231，形成四个接合面234a-d。热电半导体元件220根据发热侧电流端子210的端部211和吸热侧电流端子230的端部231的分割而分成四部分。彼此相对的接合面被焊接或以其他方式连接在一起。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2009060057A Optical assist type magnetic recorder 审中-公开
标题翻译：光辅助型磁记录仪
公开(公告)号：JP2009060057A
公开(公告)日：2009-03-19
申请号：JP2007228376
申请日：2007-09-03
申请人： Osaka Univ , 国立大学法人大阪大学
发明人： KAMIYOSHI TERUO , KAWAHARA TOSHIO , FUJIWARA YASUFUMI , KAWAI TOMOJI , TERAI YOSHIKAZU , HOTTA IKUJI , ASAKAWA NAOKI , TABATA HITOSHI , SEKI MUNETOSHI
IPC分类号： H01L27/10 , G11B5/02 , G11B5/65 , G11B11/105 , G11C11/14 , G11C11/15 , H01F10/14 , H01F10/26 , H01L21/8246 , H01L27/105 , H01L27/15 , H01L43/08
CPC分类号： G11C11/161
摘要： PROBLEM TO BE SOLVED: To provide an optical assist type magnetic recorder refined and saving power while maintaining magnetic field stability and thermal stability. SOLUTION: The optical assist type magnetic recorder is provided with a light emitting element substrate having a light emitting element layer which is constituted of a semiconductor and emits light, and an optically induced magnetic body layer, formed in a monolithic state, composed of a ferromagnetic body for which magnetization is induced by optical irradiation. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供光辅助型磁记录器，同时保持磁场稳定性和热稳定性，并且节省电力。解决方案：光辅助型磁记录器设置有具有由半导体构成的发光元件层并发光的发光元件基板和形成为整体状态的光学感应磁体层，构成的铁磁体，其通过光照射引起磁化。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2008156674A Method for cleaning metal nanoparticles 有权
标题翻译：清洁金属纳米颗粒的方法
公开(公告)号：JP2008156674A
公开(公告)日：2008-07-10
申请号：JP2006343794
申请日：2006-12-21
申请人： Osaka Univ , Ulvac Japan Ltd , 国立大学法人大阪大学 , 株式会社アルバック
发明人： AGAWA YOSHIAKI , MATSUURA MASAMICHI , KAWAHARA TOSHIO , KAWAI TOMOJI
IPC分类号： C23G5/00 , B22F1/00 , B82B3/00 , H01M4/90
CPC分类号： Y02E60/50
摘要： PROBLEM TO BE SOLVED: To provide a method for cleaning the surfaces of metal nanoparticles with a simple method. SOLUTION: The method for cleaning the surfaces of the metal nanoparticles and the peripheries includes applying a nanoimprinting method to a substrate having the metal nanoparticles with particle diameters of about 1 to 100 nm depositing thereon to remove impurities which exist on the surfaces of the metal nanoparticles depositing on the substrate and the peripheries. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种用简单方法清洗金属纳米颗粒表面的方法。解决方案：用于清洁金属纳米颗粒和外围表面的方法包括将纳米压印方法应用于具有粒径约1至100nm的金属纳米颗粒的基底上，沉积其上以除去存在于沉积在基底上的金属纳米颗粒和周边。版权所有（C）2008，JPO＆INPIT

6. 发明专利

JP2009048515A Probability resonance ring apparatus, probability resonance ring network apparatus, learned memory forgetting device, attractor selection device, and probability resonance unit 有权
标题翻译：可调谐共振环设备，可调谐共振环网络设备，学习记忆设备，引导者选择设备和可扩展性协调单元
公开(公告)号：JP2009048515A
公开(公告)日：2009-03-05
申请号：JP2007215458
申请日：2007-08-22
申请人： Osaka Univ , 国立大学法人大阪大学
发明人： ASAKAWA NAOKI , HOTTA IKUJI , KAMIYOSHI TERUO , KAWAHARA TOSHIO , KAWAI TOMOJI , TABATA HITOSHI
IPC分类号： G06N3/063 , G06N3/02 , G06N7/08
摘要： PROBLEM TO BE SOLVED: To store a signal for a long period without optimizing the strength of a noise signal.
SOLUTION: A probability resonance ring apparatus 10 is provided with m probability resonance elements 21-1 to 21-m which are connected in parallel, an adder 22 for adding signals outputted from respective probability resonance elements 21-1 to 21-m and four probability resonance units 20-1 to 20-4 including a delay unit 23 for delaying a signal added by the adder 22. Respective probability resonance units 20-1 to 20-4 are connected in a ring in one direction.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：长期存储信号而不优化噪声信号的强度。解决方案：概率共振环设备10具有并联连接的m个概率谐振元件21-1至21-m，加法器22用于将从各概率谐振元件21-1至21-m输出的信号相加以及包括用于延迟由加法器22相加的信号的延迟单元23的四个概率谐振单元20-1至20-4。各概率谐振单元20-1至20-4以一个方向以环形连接。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2008095163A Method of forming nanometal particle and method of forming nanometal thin film, and method of controlling size of nanometal particle 审中-公开
标题翻译：形成纳米颗粒的方法和形成纳米薄膜的方法和控制纳米颗粒尺寸的方法
公开(公告)号：JP2008095163A
公开(公告)日：2008-04-24
申请号：JP2006280929
申请日：2006-10-16
申请人： Osaka Univ , Ulvac Japan Ltd , 国立大学法人大阪大学 , 株式会社アルバック
发明人： KAWAI TOMOJI , KAWAHARA TOSHIO , AGAWA YOSHIAKI , SAITO ATSUSHI , HARA YASUHIRO , MATSUURA MASAMICHI
IPC分类号： C23C14/24 , B22F9/14 , B82B3/00 , C23C14/06 , H01M4/88
CPC分类号： Y02E60/50
摘要： PROBLEM TO BE SOLVED: To provide a method of forming nanometal particles with prescribed particle sizes and a method of forming a metal thin film composed of the nanoparticles, both method using a coaxial vacuum arc deposition device, and to provide a method of controlling the particle sizes of the nanometal particles. SOLUTION: Using the coaxial vacuum arc deposition device equipped with a coaxial vacuum arc deposition source having a capacitor at the vicinity thereof, a trigger discharge is generated in such a manner that discharge time in the main discharge is controlled to ≤1,000 μm, and further, peak current value has a discharge waveform of ≥2,000 A and arc discharge is induced. Further, while heating a substrate to ≥400°C, metal particles produced from a cathode electrode are released into a chamber, and nanometal particles or a thin film composed of the nanometal particles is formed on the substrate. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种形成具有规定粒径的纳米金属颗粒的方法和形成由纳米颗粒构成的金属薄膜的方法，两种方法使用同轴真空电弧沉积装置，并提供一种方法控制纳米金属颗粒的粒度。
解决方案：使用配备有在其附近具有电容器的同轴真空电弧沉积源的同轴真空电弧沉积装置，产生触发放电，使得主放电中的放电时间被控制为≤1,000μm 此外，峰值电流值具有≥2,000A的放电波形，并且产生电弧放电。此外，在将基板加热至≥400℃的同时，将从阴极电极生成的金属粒子释放到室内，在基板上形成纳米级颗粒或由纳米金属颗粒构成的薄膜。版权所有（C）2008，JPO＆INPIT

8. 发明专利

JP2007263610A Silicon substrate for x-ray diffraction measurement 审中-公开
$Silicon substrate for x-ray diffraction measurement$
标题翻译：用于X射线衍射测量的硅基板
公开(公告)号：JP2007263610A
公开(公告)日：2007-10-11
申请号：JP2006085893
申请日：2006-03-27
申请人： Osaka Univ , 国立大学法人大阪大学
发明人： KAWAI TOMOJI , TAGAWA SEIICHI , MATSUI YOSHINORI , KAWAHARA TOSHIO
IPC分类号： G01N23/207 , G01N1/32
摘要： PROBLEM TO BE SOLVED: To provide a measuring substrate usable in X-ray diffraction measurement, even in a trace amount of sample. SOLUTION: This silicon substrate for the X-ray diffraction measurement has one or more of recessed portions in the substrate, a substrate thickness in a bottom of the each recessed portion is within a range of 0.1-100μm, and a substrate thickness excepting the recessed portion is within a range of 280-1000μm. COPYRIGHT: (C)2008,JPO&INPIT

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