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1. 发明授权

US06288780B1 High throughput brightfield/darkfield wafer inspection system using advanced optical techniques 失效
标题翻译：采用先进光学技术的高通量明场/暗视场检测系统
公开(公告)号：US06288780B1
公开(公告)日：2001-09-11
申请号：US08991927
申请日：1997-12-16
申请人： Christopher R Fairley , Tao-Yi Fu , Gershon Perelman , Bin-Ming Benjamin Tsai
发明人： Christopher R Fairley , Tao-Yi Fu , Gershon Perelman , Bin-Ming Benjamin Tsai
IPC分类号： G01N2100
CPC分类号： G01N21/9501 , G01N21/8806 , G01N21/95607 , G01N21/95623 , G01N2021/8825
摘要： The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams which illuminate the surface of the wafer from approximately 6 to 39 degrees. Each laser is oriented at an azimuth angle 45 degrees from the orientation of the Manhattan geometry on the wafer, and 90 degrees in azimuth from one another. Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens. A brightfield beamsplitter in the system is removable, and preferably replaced with a blank when performing darkfield illumination. Light level control for the system is provided by a dual polarizer first stage. Light exiting from the second polarizer passes through a filter which absorbs a portion of the light and comprises the second stage of light control. The beam then passes through a polarizing beamsplitter. The second channel is further reflected and polarized and both beams thereafter illuminate the substrate.
摘要翻译：提供的宽带明场/暗场晶片检查系统经由缺陷检测器接收宽带明场照明信息，该缺陷检测器信号用于开始暗场照明。缺陷检测器形成缺陷数据的二维直方图，并且双模缺陷判定算法和后处理器评估缺陷。暗场辐射由两个可调节的高度激光束提供，其将晶片的表面从约6度39度照射。每个激光器的方位角与晶片上的曼哈顿几何形状的取向成45度，并且彼此相差90度。通过改变柱面透镜位置来补偿角度反射镜的变化，通过平移可调节的反射镜，将照明光斑定位在传感器视场内，旋转和随后移动柱面透镜来提供垂直角度调整性。系统中的明场分束器是可拆卸的，并且当执行暗场照明时，优选地用空白物替换。系统的光级控制由双偏振器第一级提供。从第二偏振片射出的光通过吸收一部分光的滤光器，并包括第二级光控制。然后光束通过偏振分光镜。第二通道被进一步反射和偏振，并且两个光束此后照亮基板。

2. 发明授权

US07379173B2 High throughput brightfield/darkfield wafer inspection system using advanced optical techniques 失效
标题翻译：采用先进光学技术的高通量明场/暗视场检测系统
公开(公告)号：US07379173B2
公开(公告)日：2008-05-27
申请号：US10887786
申请日：2004-07-09
申请人： Christopher R Fairley , Tao-Yi Fu , Gershon Perelman , Bin-Ming Benjamin Tsai
发明人： Christopher R Fairley , Tao-Yi Fu , Gershon Perelman , Bin-Ming Benjamin Tsai
IPC分类号： G01N21/00
CPC分类号： G01N21/9501 , G01N21/8806 , G01N21/95607 , G01N21/95623 , G01N2021/8825
摘要： The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams. Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens. Light level control for the system is provided by a dual polarizer first stage. Light exiting from the second polarizer passes through a filter which absorbs a portion of the light and comprises the second stage of light control.
摘要翻译：提供的宽带明场/暗场晶片检查系统经由缺陷检测器接收宽带明场照明信息，该缺陷检测器信号用于开始暗场照明。缺陷检测器形成缺陷数据的二维直方图，并且双模缺陷判定算法和后处理器评估缺陷。暗场辐射由两个可调高度的激光束提供。通过改变柱面透镜位置来补偿角度反射镜的变化，通过平移可调节的反射镜，将照明光斑定位在传感器视场内，旋转和随后移动柱面透镜来提供垂直角度调整性。系统的光级控制由双偏振器第一级提供。从第二偏振片射出的光通过吸收一部分光的滤光器，并包括第二级光控制。

3. 发明授权

US06816249B2 High throughput brightfield/darkfield wafer inspection system using advanced optical techniques 失效
公开(公告)号：US06816249B2
公开(公告)日：2004-11-09
申请号：US09907295
申请日：2001-07-17
申请人： Christopher R Fairley , Tao-Yi Fu , Gershon Perelman , Bin-Ming Benjamin Tsai
发明人： Christopher R Fairley , Tao-Yi Fu , Gershon Perelman , Bin-Ming Benjamin Tsai
IPC分类号： G01N2100
CPC分类号： G01N21/9501 , G01N21/8806 , G01N21/95607 , G01N21/95623 , G01N2021/8825
摘要： The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams which illuminate the surface of the wafer from approximately 6 to 39 degrees. Each laser is oriented at an azimuth angle 45 degrees from the orientation of the manhattan geometry on the wafer, and 90 degrees in azimuth from one another. Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens. A brightfield beamsplitter in the system is removable, and preferably replaced with a blank when performing darkfield illumination. Light level control for the system is provided by a dual polarizer first stage. Light exiting from the second polarizer passes through a filter which absorbs a portion of the light and comprises the second stage of light control. The beam then passes through a polarizing beamsplitter. The second channel is further reflected and polarized and both beams thereafter illuminate the substrate.

4. 发明授权

US07522275B2 High throughput darkfield/brightfield wafer inspection system using advanced optical techniques 有权
标题翻译：采用先进光学技术的高通量暗场/亮场晶片检测系统
公开(公告)号：US07522275B2
公开(公告)日：2009-04-21
申请号：US11893169
申请日：2007-08-14
申请人： Christopher R. Fairley , Tao-Yi Fu , Gershon Perelman , Bin-Ming Benjamin Tsai
发明人： Christopher R. Fairley , Tao-Yi Fu , Gershon Perelman , Bin-Ming Benjamin Tsai
IPC分类号： G01N21/00
CPC分类号： G01N21/9501 , G01N21/8806 , G01N21/95607 , G01N21/95623 , G01N2021/8825
摘要： The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams. Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens. A brightfield beamsplitter in the system is removable, and preferably replaced with a blank when performing darkfield illumination. Light level control for the system is provided by a dual polarizer first stage.
摘要翻译：提供的宽带明场/暗场晶片检查系统经由缺陷检测器接收宽带明场照明信息，该缺陷检测器信号用于开始暗场照明。缺陷检测器形成缺陷数据的二维直方图，并且双模缺陷判定算法和后处理器评估缺陷。暗场辐射由两个可调高度的激光束提供。通过改变柱面透镜位置来补偿角度反射镜的变化，通过平移可调节的反射镜，将照明光斑定位在传感器视场内，旋转和随后移动柱面透镜来提供垂直角度调整性。系统中的明场分束器是可拆卸的，并且当执行暗场照明时，优选地用空白物替换。系统的光级控制由双偏振器第一级提供。

5. 发明授权

US07259844B2 High throughput darkfield/brightfield wafer inspection system using advanced optical techniques 有权
公开(公告)号：US07259844B2
公开(公告)日：2007-08-21
申请号：US11652781
申请日：2007-01-12
申请人： Christopher R. Fairley , Tao-Yi Fu , Gershon Perelman , Bin-Ming Benjamin Tsai
发明人： Christopher R. Fairley , Tao-Yi Fu , Gershon Perelman , Bin-Ming Benjamin Tsai
IPC分类号： G01N21/00
CPC分类号： G01N21/9501 , G01N21/8806 , G01N21/95607 , G01N21/95623 , G01N2021/8825
摘要： The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams which illuminate the surface of the wafer from approximately 6 to 39 degrees. Each laser is oriented at an azimuth angle 45 degrees from the orientation of the manhattan geometry on the wafer, and 90 degrees in azimuth from one another. Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens. A brightfield beamsplitter in the system is removable, and preferably replaced with a blank when performing darkfield illumination. Light level control for the system is provided by a dual polarizer first stage. Light exiting from the second polarizer passes through a filter which absorbs a portion of the light and comprises the second stage of light control. The beam then passes through a polarizing beamsplitter. The second channel is further reflected and polarized and both beams thereafter illuminate the substrate.

6. 发明授权

US07164475B2 High throughput brightfield/darkfield wafer inspection system using advanced optical techniques 有权
标题翻译：采用先进光学技术的高通量明场/暗视场检测系统
公开(公告)号：US07164475B2
公开(公告)日：2007-01-16
申请号：US10983078
申请日：2004-11-04
申请人： Christopher R Fairley , Tao-Yi Fu , Gershon Perelman , Bin-Ming Benjamin Tsai
发明人： Christopher R Fairley , Tao-Yi Fu , Gershon Perelman , Bin-Ming Benjamin Tsai
IPC分类号： G01N21/00
CPC分类号： G01N21/9501 , G01N21/8806 , G01N21/95607 , G01N21/95623 , G01N2021/8825
摘要： The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens. A brightfield beamsplitter in the system is removable, and preferably replaced with a blank when performing darkfield illumination. Light level control for the system is provided by a dual polarizer first stage.
摘要翻译：提供的宽带明场/暗场晶片检查系统经由缺陷检测器接收宽带明场照明信息，该缺陷检测器信号用于开始暗场照明。缺陷检测器形成缺陷数据的二维直方图，并且双模缺陷判定算法和后处理器评估缺陷。暗场辐射由两个可调高度的激光束提供垂直角度可调性通过修改柱面透镜位置来补偿角镜反射镜的变化，通过平移可调镜，将照明点定位到传感器视场内，旋转并随后移动柱面透镜。系统中的明场分束器是可拆卸的，并且当执行暗场照明时，优选地用空白物替换。系统的光级控制由双偏振器第一级提供。

7. 发明授权

US07109458B2 Confocal wafer depth scanning inspection method 有权
标题翻译：共焦晶圆深度扫描检测方法
公开(公告)号：US07109458B2
公开(公告)日：2006-09-19
申请号：US11079614
申请日：2005-03-14
申请人： Christopher R. Fairley , Tao-Yi Fu , Bin-Ming Benjamin Tsai , Scott A. Young
发明人： Christopher R. Fairley , Tao-Yi Fu , Bin-Ming Benjamin Tsai , Scott A. Young
IPC分类号： G02B7/04
CPC分类号： G01N21/9501 , G02B3/0056 , G02B21/0024 , G02B21/0028 , G02B21/008 , G02B27/40
摘要： A semiconductor wafer inspection system and method is provided which uses a multiple element arrangement, such as an offset fly lens array. The preferred embodiment uses a laser to transmit light energy toward a beam expander, which expands the light energy to create an illumination field. An offset fly lens array converts light energy from the illumination field into an offset pattern of illumination spots. A lensing arrangement, including a first lens, a transmitter/reflector, an objective, and a Mag tube imparts light energy onto the specimen and passes the light energy toward a pinhole mask. The pinhole mask is mechanically aligned with the offset fly lens array. Light energy passing through each pinhole in the pinhole mask is directed toward a relay lens, which guides light energy onto a sensor. The offset fly lens array corresponds to the pinhole mask. The offset pattern of the offset fly lens array is chosen such that spots produced can be recombined into a continuous image, and the system utilizes a time delay and integration charge coupled device for rapid sensing along with an autofocus system that measures and cancels topological features of the specimen.
摘要翻译：提供了使用多重元件布置的半导体晶片检查系统和方法，例如偏移飞行透镜阵列。优选实施例使用激光将光能传递到光束扩展器，其扩展光能以产生照明场。偏移飞行透镜阵列将来自照明场的光能转换成照明点的偏移图案。包括第一透镜，发射器/反射器，物镜和Mag管的透镜装置将光能量施加到样本上并将光能传递给针孔掩模。针孔掩模与偏置飞行透镜阵列机械对准。通过针孔掩模中的每个针孔的光能被引向中继透镜，该中继透镜将光能引导到传感器上。偏移飞行透镜阵列对应于针孔掩模。选择偏移飞行透镜阵列的偏移图案，使得所产生的斑点可以重新组合成连续图像，并且系统利用时间延迟和积分电荷耦合器件与快速感测以及自动对焦系统一起测量和消除拓扑特征标本。

8. 发明授权

US07399950B2 Confocal wafer inspection method and apparatus using fly lens arrangement 有权
标题翻译：共焦晶片检查方法和使用飞行透镜装置的装置
公开(公告)号：US07399950B2
公开(公告)日：2008-07-15
申请号：US11521930
申请日：2006-09-15
申请人： Christopher R. Fairley , Tao-Yi Fu , Bin-Ming Benjamin Tsai , Scott A. Young
发明人： Christopher R. Fairley , Tao-Yi Fu , Bin-Ming Benjamin Tsai , Scott A. Young
IPC分类号： G02B7/04
CPC分类号： G01N21/9501 , G02B3/0056 , G02B21/0024 , G02B21/0028 , G02B21/008 , G02B27/40
摘要： A semiconductor wafer inspection system and method is provided which uses a multiple element arrangement, such as an offset fly lens array. The preferred embodiment uses a laser to transmit light energy toward a beam expander, which expands the light energy to create an illumination field. An offset fly lens array converts light energy from the illumination field into an offset pattern of illumination spots. A lensing arrangement, including a first lens, a transmitter/reflector, an objective, and a Mag tube imparts light energy onto the specimen and passes the light energy toward a pinhole mask. The pinhole mask is mechanically aligned with the offset fly lens array. Light energy passing through each pinhole in the pinhole mask is directed toward a relay lens, which guides light energy onto a sensor. The offset fly lens array corresponds to the pinhole mask. The offset pattern of the offset fly lens array is chosen such that spots produced can be recombined into a continuous image, and the system utilizes a time delay and integration charge coupled device for rapid sensing along with an autofocus system that measures and cancels topological features of the specimen.
摘要翻译：提供了使用多重元件布置的半导体晶片检查系统和方法，例如偏移飞行透镜阵列。优选实施例使用激光将光能传递到光束扩展器，其扩展光能以产生照明场。偏移飞行透镜阵列将来自照明场的光能转换成照明点的偏移图案。包括第一透镜，发射器/反射器，物镜和Mag管的透镜装置将光能量施加到样本上并将光能传递给针孔掩模。针孔掩模与偏置飞行透镜阵列机械对准。通过针孔掩模中的每个针孔的光能被引向中继透镜，该中继透镜将光能引导到传感器上。偏移飞行透镜阵列对应于针孔掩模。选择偏移飞行透镜阵列的偏移图案，使得所产生的斑点可以重新组合成连续图像，并且系统利用时间延迟和积分电荷耦合器件与快速感测以及自动对焦系统一起测量和消除拓扑特征标本。

9. 发明授权

US06867406B1 Confocal wafer inspection method and apparatus using fly lens arrangement 有权
标题翻译：共焦晶片检查方法和使用飞行透镜装置的装置
公开(公告)号：US06867406B1
公开(公告)日：2005-03-15
申请号：US09533203
申请日：2000-03-23
申请人： Christopher R. Fairley , Tao-Yi Fu , Bin-Ming Benjamin Tsai , Scott A. Young
发明人： Christopher R. Fairley , Tao-Yi Fu , Bin-Ming Benjamin Tsai , Scott A. Young
IPC分类号： G02B21/00 , G02B27/40
CPC分类号： G01N21/9501 , G02B3/0056 , G02B21/0024 , G02B21/0028 , G02B21/008 , G02B27/40
摘要： A semiconductor wafer inspection system and method is provided which uses a multiple element arrangement, such as an offset fly lens array. The preferred embodiment uses a laser to transmit light energy toward a beam expander, which expands the light energy to create an illumination field. An offset fly lens array converts light energy from the illumination field into an offset pattern of illumination spots. A lensing arrangement, including a first lens, a transmitter/reflector, an objective, and a Mag tube imparts light energy onto the specimen and passes the light energy toward a pinhole mask. The pinhole mask is mechanically aligned with the offset fly lens array. Light energy passing through each pinhole in the pinhole mask is directed toward a relay lens, which guides light energy onto a sensor. The offset fly lens array corresponds to the pinhole mask. The offset pattern of the offset fly lens array is chosen such that spots produced can be recombined into a continuous image, and the system utilizes a time delay and integration charge coupled device for rapid sensing along with an autofocus system that measures and cancels topological features of the specimen.
摘要翻译：提供了使用多重元件布置的半导体晶片检查系统和方法，例如偏移飞行透镜阵列。优选实施例使用激光将光能传递到光束扩展器，其扩展光能以产生照明场。偏移飞行透镜阵列将来自照明场的光能转换成照明点的偏移图案。包括第一透镜，发射器/反射器，物镜和Mag管的透镜装置将光能量施加到样本上并将光能传递给针孔掩模。针孔掩模与偏置飞行透镜阵列机械对准。通过针孔掩模中的每个针孔的光能被引向中继透镜，该中继透镜将光能引导到传感器上。偏移飞行透镜阵列对应于针孔掩模。选择偏移飞行透镜阵列的偏移图案，使得所产生的斑点可以重新组合成连续图像，并且系统利用时间延迟和积分电荷耦合器件与快速感测以及自动对焦系统一起测量和消除拓扑特征标本。

10. 发明申请

US20080007726A1 High throughput darkfield/brightfield wafer inspection system using advanced optical techniques 有权
标题翻译：采用先进光学技术的高通量暗场/亮场晶片检测系统
公开(公告)号：US20080007726A1
公开(公告)日：2008-01-10
申请号：US11893169
申请日：2007-08-14
申请人： Christopher Fairley , Tao-Yi Fu , Gershon Perelman , Bin-Ming Tsai
发明人： Christopher Fairley , Tao-Yi Fu , Gershon Perelman , Bin-Ming Tsai
IPC分类号： G01N21/00
CPC分类号： G01N21/9501 , G01N21/8806 , G01N21/95607 , G01N21/95623 , G01N2021/8825
摘要： The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams which illuminate the surface of the wafer from approximately 6 to 39 degrees. Each laser is oriented at an azimuth angle 45 degrees from the orientation of the manhattan geometry on the wafer, and 90 degrees in azimuth from one another. Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens. A brightfield beamsplitter in the system is removable, and preferably replaced with a blank when performing darkfield illumination. Light level control for the system is provided by a dual polarizer first stage. Light exiting from the second polarizer passes through a filter which absorbs a portion of the light and comprises the second stage of light control. The beam then passes through a polarizing beamsplitter. The second channel is further reflected and polarized and both beams thereafter illuminate the substrate.
摘要翻译：提供的宽带明场/暗场晶片检查系统经由缺陷检测器接收宽带明场照明信息，该缺陷检测器信号用于开始暗场照明。缺陷检测器形成缺陷数据的二维直方图，并且双模缺陷判定算法和后处理器评估缺陷。暗场辐射由两个可调节的高度激光束提供，其将晶片的表面从约6度39度照射。每个激光器定向在与晶片上的曼哈顿几何形状的取向成45度的方位角，并且彼此成90度的方位角。通过改变柱面透镜位置来补偿角度反射镜的变化，通过平移可调节的反射镜，将照明光斑定位在传感器视场内，旋转和随后移动柱面透镜来提供垂直角度调整性。系统中的明场分束器是可拆卸的，并且当执行暗场照明时，优选地用空白物替换。系统的光级控制由双偏振器第一级提供。从第二偏振片射出的光通过吸收一部分光的滤光器，并包括第二级光控制。然后光束通过偏振分光镜。第二通道被进一步反射和偏振，并且两个光束此后照亮基板。

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