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1. 发明授权

US09009637B2 Method for designing an array of organic photodetector or photoemitter elements 有权
标题翻译：设计有机光电探测器或光电元件阵列的方法
公开(公告)号：US09009637B2
公开(公告)日：2015-04-14
申请号：US14111370
申请日：2012-04-12
申请人： Christophe Premont , Romain Gwoziecki
发明人： Christophe Premont , Romain Gwoziecki
IPC分类号： G06F17/50 , H04N5/374 , H01L27/32 , H01L27/30
CPC分类号： G06F17/5077 , H01L27/307 , H01L27/3281 , H04N5/365 , H04N5/374
摘要： A method for making a matrix device including a matrix of photodetecting or photoemitting elements, the method including designing operations for: a) identifying, from at least one topology of the matrix device, one or more spurious conducting closed circuits; b) selecting at least one photodetecting or photoemitting element of the matrix device belonging to at least one of the spurious conducting closed circuits identified, the at least one element selected being made inactive.
摘要翻译：一种用于制造包括光电检测元件或光发射元件矩阵的矩阵器件的方法，所述方法包括设计以下操作的操作：a）从所述矩阵器件的至少一个拓扑结构识别一个或多个杂散导通闭合电路; b）选择属于所识别的杂散导电闭合电路中的至少一个的矩阵装置的至少一个光电检测或光发射元件，所选择的至少一个元件使其不活动。

2. 发明申请

US20140149959A1 METHOD FOR DESIGNING AN ARRAY OF ORGANIC PHOTODETECTOR OR PHOTOEMITTER ELEMENTS 有权
标题翻译：用于设计有机光电转换器或光电元件阵列的方法
公开(公告)号：US20140149959A1
公开(公告)日：2014-05-29
申请号：US14111370
申请日：2012-04-12
申请人： Christophe Premont , Romain Gwoziecki
发明人： Christophe Premont , Romain Gwoziecki
IPC分类号： G06F17/50
CPC分类号： G06F17/5077 , H01L27/307 , H01L27/3281 , H04N5/365 , H04N5/374
摘要： A method for making a matrix device including a matrix of photodetecting or photoemitting elements, the method including designing operations for: a) identifying, from at least one topology of the matrix device, one or more spurious conducting closed circuits; b) selecting at least one photodetecting or photoemitting element of the matrix device belonging to at least one of the spurious conducting closed circuits identified, the at least one element selected being made inactive.
摘要翻译：一种用于制造包括光电检测元件或光发射元件矩阵的矩阵器件的方法，所述方法包括设计以下操作的操作：a）从所述矩阵器件的至少一个拓扑结构识别一个或多个杂散导通闭合电路; b）选择属于所识别的杂散导电闭合电路中的至少一个的矩阵装置的至少一个光电检测或光发射元件，所选择的至少一个元件使其不活动。

3. 发明申请

US20130056834A1 MICROELECTRONIC DEVICE WITH DISCONNECTED SEMICONDUCTOR PORTIONS AND METHODS OF MAKING SUCH A DEVICE 有权
标题翻译：具有断开的半导体器件的微电子器件及其制造方法
公开(公告)号：US20130056834A1
公开(公告)日：2013-03-07
申请号：US13695903
申请日：2011-05-03
申请人： Romain Gwoziecki , Romain Coppard
发明人： Romain Gwoziecki , Romain Coppard
IPC分类号： H01L27/088 , H01L21/84
CPC分类号： H01L51/0508 , H01L27/28 , H01L51/0004 , H01L51/0018 , H01L51/0541 , H01L51/0545 , H01L51/0558
摘要： A microelectronic device includes a plurality of disconnected similar semiconducting portions, electrically isolated from each other and forming a semiconductor layer, at a spacing by a constant distance and with a shape parallel to the other portions. The microelectronic device also includes two electrodes arranged in contact with the semiconductor layer such that a maximum distance separating the two electrodes is less than the largest dimension of one of the semiconductor portions. The shape and dimensions of the semiconductor portions, the spacing between the semiconductor portions, the shape and dimensions of the electrodes and the layout of the electrodes relative to the semiconductor portions are such that at least one of the semiconductor portions electrically connects the two electrodes to each other. The largest dimensions of the semiconductor portions are perpendicular to the largest dimension of the electrodes, the electrodes being similar.
摘要翻译：微电子器件包括多个不连续的类似的半导体部分，它们彼此电隔离并形成半导体层，间隔一定距离并且具有与其它部分平行的形状。微电子器件还包括与半导体层接触布置的两个电极，使得分离两个电极的最大距离小于半导体部分之一的最大尺寸。半导体部分的形状和尺寸，半导体部分之间的间隔，电极的形状和尺寸以及电极相对于半导体部分的布局使得至少一个半导体部分将两个电极电连接到彼此。半导体部分的最大尺寸垂直于电极的最大尺寸，电极类似。

4. 发明授权

US08604482B2 Microelectronic device with disconnected semiconductor portions and methods of making such a device 有权
标题翻译：具有半导体部分断开的微电子器件和制造这种器件的方法
公开(公告)号：US08604482B2
公开(公告)日：2013-12-10
申请号：US13695903
申请日：2011-05-03
申请人： Romain Gwoziecki , Romain Coppard
发明人： Romain Gwoziecki , Romain Coppard
IPC分类号： H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20
CPC分类号： H01L51/0508 , H01L27/28 , H01L51/0004 , H01L51/0018 , H01L51/0541 , H01L51/0545 , H01L51/0558
摘要： A microelectronic device includes a plurality of disconnected similar semiconducting portions, electrically isolated from each other and forming a semiconductor layer, at a spacing by a constant distance and with a shape parallel to the other portions. The microelectronic device also includes two electrodes arranged in contact with the semiconductor layer such that a maximum distance separating the two electrodes is less than the largest dimension of one of the semiconductor portions. The shape and dimensions of the semiconductor portions, the spacing between the semiconductor portions, the shape and dimensions of the electrodes and the layout of the electrodes relative to the semiconductor portions are such that at least one of the semiconductor portions electrically connects the two electrodes to each other. The largest dimensions of the semiconductor portions are perpendicular to the largest dimension of the electrodes, the electrodes being similar.
摘要翻译：微电子器件包括多个不连续的类似的半导体部分，它们彼此电隔离并形成半导体层，间隔一定距离并且具有与其它部分平行的形状。微电子器件还包括与半导体层接触布置的两个电极，使得分离两个电极的最大距离小于半导体部分之一的最大尺寸。半导体部分的形状和尺寸，半导体部分之间的间隔，电极的形状和尺寸以及电极相对于半导体部分的布局使得至少一个半导体部分将两个电极电连接到彼此。半导体部分的最大尺寸垂直于电极的最大尺寸，电极类似。

5. 发明申请

US20120199821A1 ORGANIC DUAL-GATE MEMORY AND METHOD FOR PRODUCING SAME 失效
标题翻译：有机双门记忆及其生产方法
公开(公告)号：US20120199821A1
公开(公告)日：2012-08-09
申请号：US13500273
申请日：2010-09-30
申请人： Romain Gwoziecki , Mohamed Benwadih , Philippe Coronel , Stephanie Jacob
发明人： Romain Gwoziecki , Mohamed Benwadih , Philippe Coronel , Stephanie Jacob
IPC分类号： H01L51/30 , H01L51/40
CPC分类号： H01L51/0554 , H01L51/004 , H01L51/0516
摘要： The organic memory device is a double-gate transistor that successively comprises a first gate electrode, a first gate dielectric, an organic semi-conductor material, a second gate dielectric and a second gate electrode. Source and drain electrodes are arranged in the organic semiconductor material and define an inter-electrode surface. A trapping area is arranged between the organic semiconductor material and one of the gate electrodes and is in electric contact with one of the gate electrodes or the organic semi-conductor material. The trapping area is at least facing the inter-electrode surface.
摘要翻译：有机存储器件是双栅极晶体管，其连续地包括第一栅电极，第一栅极电介质，有机半导体材料，第二栅极电介质和第二栅电极。源电极和漏极布置在有机半导体材料中并限定电极间表面。在有机半导体材料和栅极电极之间布置有捕获区域，并且与栅极电极或有机半导体材料中的一个电接触。捕获区域至少面向电极间表面。

6. 发明授权

US08710494B2 Organic dual-gate memory and method for producing same 失效
标题翻译：有机双栅极存储器及其制造方法
公开(公告)号：US08710494B2
公开(公告)日：2014-04-29
申请号：US13500273
申请日：2010-09-30
申请人： Romain Gwoziecki , Mohamed Benwadih , Philippe Coronel , Stéphanie Jacob
发明人： Romain Gwoziecki , Mohamed Benwadih , Philippe Coronel , Stéphanie Jacob
IPC分类号： H01L21/02
CPC分类号： H01L51/0554 , H01L51/004 , H01L51/0516
摘要： The organic memory device is a double-gate transistor that successively comprises a first gate electrode, a first gate dielectric, an organic semi-conductor material, a second gate dielectric and a second gate electrode. Source and drain electrodes are arranged in the organic semiconductor material and define an inter-electrode surface. A trapping area is arranged between the organic semiconductor material and one of the gate electrodes and is in electric contact with one of the gate electrodes or the organic semi-conductor material. The trapping area is at least facing the inter-electrode surface.
摘要翻译：有机存储器件是双栅极晶体管，其连续地包括第一栅极电极，第一栅极电介质，有机半导体材料，第二栅极电介质和第二栅极电极。源电极和漏极布置在有机半导体材料中并限定电极间表面。在有机半导体材料和栅极电极之间布置有捕获区域，并且与栅极电极或有机半导体材料中的一个电接触。捕获区域至少面向电极间表面。

7. 再颁专利

USRE41764E1 Semiconductor device with compensated threshold voltage and method for making same 有权
标题翻译：具有补偿阈值电压的半导体器件及其制造方法
公开(公告)号：USRE41764E1
公开(公告)日：2010-09-28
申请号：US11318397
申请日：2000-06-05
申请人： Thomas Skotnicki , Romain Gwoziecki
发明人： Thomas Skotnicki , Romain Gwoziecki
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/66575 , H01L21/2253 , H01L21/26586 , H01L29/1041
摘要： A semiconductor device may include a channel region formed between a source and a drain region. One or more first pockets may be formed in the channel region adjacent to junctions. The first pockets may be doped with a dopant of the first conductivity type. At least one second pocket may be formed adjacent to each of the junctions and stacked against each of the first pockets. The second pocket may be doped with a dopant of a second conductivity type such that the dopant concentration in the second pocket is less than the dopant concentration in the first pockets. The second pocket may reduce a local substrate concentration without changing the conductivity type of the channel region.
摘要翻译：半导体器件可以包括形成在源区和漏区之间的沟道区。一个或多个第一凹穴可以形成在邻近结的通道区域中。第一个袋可以掺杂有第一导电类型的掺杂剂。至少一个第二袋可以邻近每个接合点形成并且堆叠在每个第一袋上。第二袋可以掺杂有第二导电类型的掺杂剂，使得第二袋中的掺杂剂浓度小于第一袋中的掺杂剂浓度。第二个袋可以减少局部衬底浓度而不改变沟道区的导电类型。

8. 发明授权

US06667513B1 Semiconductor device with compensated threshold voltage and method for making same 有权
标题翻译：具有补偿阈值电压的半导体器件及其制造方法
公开(公告)号：US06667513B1
公开(公告)日：2003-12-23
申请号：US10018179
申请日：2002-05-03
申请人： Thomas Skotnicki , Romain Gwoziecki
发明人： Thomas Skotnicki , Romain Gwoziecki
IPC分类号： H01L2976
CPC分类号： H01L29/66575 , H01L21/2253 , H01L21/26586 , H01L29/1041
摘要： A semiconductor device may include a channel region formed between a source and a drain region. One or more first pockets may be formed in the channel region adjacent to junctions. The first pockets may be doped with a dopant of the first conductivity type. At least one second pocket may be formed adjacent to each of the junctions and stacked against each of the first pockets. The second pocket may be doped with a dopant of a second conductivity type such that the dopant concentration in the second pocket is less than the dopant concentration in the first pockets. The second pocket may reduce a local substrate concentration without changing the conductivity type of the channel region.
摘要翻译：半导体器件可以包括形成在源区和漏区之间的沟道区。一个或多个第一凹穴可以形成在邻近结的通道区域中。第一个袋可以掺杂有第一导电类型的掺杂剂。至少一个第二袋可以邻近每个接合点形成并且堆叠在每个第一袋上。第二袋可以掺杂有第二导电类型的掺杂剂，使得第二袋中的掺杂剂浓度小于第一袋中的掺杂剂浓度。第二个袋可以减少局部衬底浓度而不改变沟道区的导电类型。

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