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    • 1. 发明授权
    • Preservation circuit and methods to maintain values representing data in one or more layers of memory
    • 保存电路和保持在一层或多层存储器中表示数据的值的方法
    • US07719876B2
    • 2010-05-18
    • US12221136
    • 2008-07-31
    • Christophe J. ChevallierRobert Norman
    • Christophe J. ChevallierRobert Norman
    • G11C7/00
    • G11C13/0035G11C5/005G11C5/02G11C11/16G11C13/0002G11C13/0033G11C13/004G11C13/0061G11C13/0069G11C2213/71G11C2213/77
    • Circuitry and methods for restoring data in memory are disclosed. The memory may include at least one layer of a non-volatile two-terminal cross-point array that includes a plurality of two-terminal memory elements that store data as a plurality of conductivity profiles and retain stored data in the absence of power. Over a period of time, logic values indicative of the stored data may drift such that if the logic values are not restored, the stored data may become corrupted. At least a portion of each memory may have data rewritten or restored by circuitry electrically coupled with the memory. Other circuitry may be used to determine a schedule for performing restore operations to the memory and the restore operations may be triggered by an internal or an external signal or event. The circuitry may be positioned in a logic layer and the memory may be fabricated over the logic layer.
    • 公开了用于恢复存储器中的数据的电路和方法。 存储器可以包括非易失性两端交叉点阵列的至少一层,其包括将数据存储为多个电导率分布并且在没有电力的情况下保存存储的数据的多个两端存储器元件。 在一段时间内,指示存储的数据的逻辑值可能漂移,使得如果逻辑值不被恢复,则所存储的数据可能被破坏。 每个存储器的至少一部分可以具有与存储器电耦合的电路重写或恢复的数据。 可以使用其他电路来确定用于对存储器执行恢复操作的调度,并且恢复操作可以由内部或外部信号或事件来触发。 电路可以定位在逻辑层中,并且存储器可以在逻辑层上制造。
    • 10. 发明授权
    • Buffering systems for accessing multiple layers of memory in integrated circuits
    • 用于在集成电路中访问多层存储器的缓冲系统
    • US08120970B2
    • 2012-02-21
    • US13134734
    • 2011-06-14
    • Robert Norman
    • Robert Norman
    • G11C7/10
    • G11C7/1006G06F13/1668G11C5/025G11C7/1012G11C7/1078G11C7/1084G11C7/1096G11C2207/2218
    • Embodiments of the invention relate generally to data storage and computer memory, and more particularly, to systems, integrated circuits and methods for accessing memory in multiple layers of memory implementing, for example, third dimension memory technology. In a specific embodiment, an integrated circuit is configured to implement write buffers to access multiple layers of memory. For example, the integrated circuit can include memory cells disposed in multiple layers of memory. In one embodiment, the memory cells can be third dimension memory cells. The integrated circuit can also include read buffers that can be sized differently than the write buffers. In at least one embodiment, write buffers can be sized as a function of a write cycle. Each layer of memory can include a plurality of two-terminal memory elements that retain stored data in the absence of power and store data as a plurality of conductivity profiles.
    • 本发明的实施例一般涉及数据存储和计算机存储器,更具体地,涉及用于访问实现例如第三维存储器技术的多层存储器中的存储器的系统,集成电路和方法。 在具体实施例中,集成电路被配置为实现写入缓冲器以访问多层存储器。 例如,集成电路可以包括设置在多层存储器中的存储单元。 在一个实施例中,存储器单元可以是第三维存储器单元。 集成电路还可以包括可以与写入缓冲器不同的读取缓冲器。 在至少一个实施例中,写入缓冲器的大小可以作为写周期的函数。 每层存储器可以包括多个两端存储元件,其在不存在功率的情况下保存存储的数据,并将数据存储为多个导电率分布。