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1. 发明授权

US08536579B2 Electronic device having spatially inverted thin film transistors 有权
标题翻译：具有空间反转的薄膜晶体管的电子器件
公开(公告)号：US08536579B2
公开(公告)日：2013-09-17
申请号：US12669704
申请日：2008-07-16
申请人： Christoph Wilhelm Sele , Monica Johanna Beenhakkers , Gerwin Hermanus Gelinck , Nicolaas Aldegonda Jan Maria Van Aerle , Hjalmar Edzer Ayco Huitema
发明人： Christoph Wilhelm Sele , Monica Johanna Beenhakkers , Gerwin Hermanus Gelinck , Nicolaas Aldegonda Jan Maria Van Aerle , Hjalmar Edzer Ayco Huitema
IPC分类号： H01L29/10 , H01L29/76 , H01L31/036 , H01L31/112 , H01L29/04 , H01L31/0376 , H01L31/20 , H01L29/15 , H01L31/062 , H01L31/113 , H01L27/01 , H01L27/12 , H01L31/0392
CPC分类号： H01L27/1251 , H01L27/124 , H01L27/1292 , H01L27/283 , H01L27/286 , H01L29/7869
摘要： The invention relates to an electronic device including a sequence of a first thin film transistor (TFT) and a second TFT, the first TFT including a first set of electrodes separated by a first insulator, the second TFT comprising a second set of electrodes separated by a second insulator, wherein the first set of electrodes and the second set of electrodes are formed from a first shared conductive layer and a second shared conductive layer, the first insulator and the second insulator being formed by a shared dielectric layer. The invention further relates to a method of manufacturing an electronic device.
摘要翻译：本发明涉及一种包括第一薄膜晶体管（TFT）和第二TFT的序列的电子器件，所述第一TFT包括由第一绝缘体隔开的第一组电极，所述第二TFT包括由第二组电极分开的第二组电极第二绝缘体，其中所述第一组电极和所述第二组电极由第一共用导电层和第二共用导电层形成，所述第一绝缘体和所述第二绝缘体由共用介电层形成。本发明还涉及一种制造电子设备的方法。

2. 发明申请

US20100320448A1 Electronic Component And A Method Of Manufacturing An Electronic Component 有权
标题翻译：电子元件及其制造方法
公开(公告)号：US20100320448A1
公开(公告)日：2010-12-23
申请号：US12669676
申请日：2008-07-16
申请人： Christoph Wilhelm Sele , Monica Johanna Beenhakkers , Gerwin Hermanus Gelinck , Nicolaas Aldegonda Jan Maria van Aerle , Hjalmar Edzer Ayco Huitema
发明人： Christoph Wilhelm Sele , Monica Johanna Beenhakkers , Gerwin Hermanus Gelinck , Nicolaas Aldegonda Jan Maria van Aerle , Hjalmar Edzer Ayco Huitema
IPC分类号： H01L51/05 , H01L21/02
CPC分类号： H01L21/283 , H01L21/31133 , H01L27/3244 , H01L27/3276 , H01L51/0021 , H01L51/0533
摘要： An electronic component, notably one including, for example, a TFT, a storage capacitor, or a crossing between electrically conductive layers of a stack device is disclosed. The electronic component comprises a substrate whereon a first electrically conductive layer forming electrode is provided. A second electrode formed by a second electrically conductive layer is separated from the first electrode by at least a dielectric layer, comprising an interlayer of an electrically insulating material, preferably having high resistance against view (a) electrical breakdown and a further layer of a photo-patternable electrically insulating material.
摘要翻译：公开了一种电子部件，特别是包括例如TFT，存储电容器或堆叠装置的导电层之间的交叉的电子部件。电子部件包括设置有第一导电层形成电极的基板。由第二导电层形成的第二电极通过至少一个电介质层与第一电极分开，该电介质层包括电绝缘材料的中间层，优选地具有高电阻（a）电击穿和另一层照片电绝缘材料。

3. 发明申请

US20100237352A1 ELECTRONIC DEVICE AND A METHOD OF MANUFACTURING AN ELECTRONIC DEVICE 有权
标题翻译：电子设备和制造电子设备的方法
公开(公告)号：US20100237352A1
公开(公告)日：2010-09-23
申请号：US12669704
申请日：2008-07-16
申请人： Christoph Wilhelm Sele , Monica Johanna Beenhakkers , Gerwin Hermanus Gelinck , Nicolaas Aldegonda Jan Maria Van Aerle , Hjalmar Edzer Ayco Huitema
发明人： Christoph Wilhelm Sele , Monica Johanna Beenhakkers , Gerwin Hermanus Gelinck , Nicolaas Aldegonda Jan Maria Van Aerle , Hjalmar Edzer Ayco Huitema
IPC分类号： H01L29/786 , H01L21/20
CPC分类号： H01L27/1251 , H01L27/124 , H01L27/1292 , H01L27/283 , H01L27/286 , H01L29/7869
摘要： The invention relates to an electronic device comprising a sequence of a first thin film transistor (TFT) and a second TFT, the first TFT comprising a first set of electrodes separated by a first insulator, the second TFT comprising a second set of electrodes separated by a second insulator, wherein the first set of electrodes and the second set of electrodes are formed from a first shared conductive layer and a second shared conductive layer, the first insulator and the second insulator being formed by a shared dielectric layer. The invention further relates to a method of manufacturing an electronic device.
摘要翻译：本发明涉及一种包括第一薄膜晶体管（TFT）和第二TFT的序列的电子器件，所述第一TFT包括由第一绝缘体隔开的第一组电极，所述第二TFT包括第二组电极，所述第二组电极由第二绝缘体，其中所述第一组电极和所述第二组电极由第一共用导电层和第二共用导电层形成，所述第一绝缘体和所述第二绝缘体由共用介电层形成。本发明还涉及一种制造电子设备的方法。

4. 发明授权

US08686530B2 Electronic component and a method of manufacturing an electronic component 有权
标题翻译：电子部件和电子部件的制造方法
公开(公告)号：US08686530B2
公开(公告)日：2014-04-01
申请号：US12669676
申请日：2008-07-16
申请人： Christoph Wilhelm Sele , Monica Johanna Beenhakkers , Gerwin Hermanus Gelinck , Nicolaas Aldegonda Jan Maria Van Aerle , Hjalmar Edzer Ayco Huitema
发明人： Christoph Wilhelm Sele , Monica Johanna Beenhakkers , Gerwin Hermanus Gelinck , Nicolaas Aldegonda Jan Maria Van Aerle , Hjalmar Edzer Ayco Huitema
IPC分类号： H01L29/02
CPC分类号： H01L21/283 , H01L21/31133 , H01L27/3244 , H01L27/3276 , H01L51/0021 , H01L51/0533
摘要： An electronic component, notably one including, for example, a TFT, a storage capacitor, or a crossing between electrically conductive layers of a stack device is disclosed. The electronic component comprises a substrate whereon a first electrically conductive layer forming electrode is provided. A second electrode formed by a second electrically conductive layer is separated from the first electrode by at least a dielectric layer, comprising an interlayer of an electrically insulating material, preferably having high resistance against electrical breakdown and a further layer of a photo-patternable electrically insulating material.
摘要翻译：公开了一种电子部件，特别是包括例如TFT，存储电容器或堆叠装置的导电层之间的交叉的电子部件。电子部件包括设置有第一导电层形成电极的基板。由第二导电层形成的第二电极通过至少一个电介质层与第一电极分开，该电介质层包括电绝缘材料的中间层，优选地具有高的电击穿电阻，以及另一层可光电构造的电绝缘层材料。

5. 发明授权

US08673665B2 Pixel performance improvement by use of a field shield 有权
标题翻译：通过使用场盾来提升像素性能
公开(公告)号：US08673665B2
公开(公告)日：2014-03-18
申请号：US13167673
申请日：2011-06-23
申请人： Hjalmar Edzer Ayco Huitema , Gerwin Hermanus Gelinck
发明人： Hjalmar Edzer Ayco Huitema , Gerwin Hermanus Gelinck
IPC分类号： H01L33/08
CPC分类号： G02F1/136213 , G02F1/167 , G02F2001/136218 , H01L27/12 , H01L27/3272 , H01L51/0512 , H01L51/0554
摘要： A pixel cell (100) and method for making the same for an active matrix display includes a pixel pad (110) and a thin film field effect transistor (106) which selectably couples a signal to activate/deactivate the pixel pad. A field shield (112) is formed on an insulating layer (102) and connected to the pixel pad through the insulating layer such that the field shield extends over at least a portion of the pixel pad. The field shield may extend over the thin film transistor and form a second gate (215) used to enhance the performance of the thin film transistor and the pixel cell.
摘要翻译：像素单元（100）和用于制作有源矩阵显示器的方法包括可选地耦合信号以激活/去激活像素块的像素块（110）和薄膜场效应晶体管（106）。场绝缘层（112）形成在绝缘层（102）上，并通过绝缘层连接到像素焊盘，使得屏蔽层延伸到像素焊盘的至少一部分上。场屏蔽可以在薄膜晶体管上延伸并且形成用于增强薄膜晶体管和像素单元的性能的第二栅极（215）。

6. 发明授权

US08125434B2 Method for addressing active matrix displays with ferroelectrical thin film transistor based pixels 有权
标题翻译：基于铁电薄膜晶体管的像素寻址有源矩阵显示的方法
公开(公告)号：US08125434B2
公开(公告)日：2012-02-28
申请号：US12091677
申请日：2007-11-03
申请人： Hjalmar Edzer Ayco Huitema , Gerwin Hermanus Gelinck
发明人： Hjalmar Edzer Ayco Huitema , Gerwin Hermanus Gelinck
IPC分类号： G09G3/36
CPC分类号： G09G3/20 , G09G2300/08
摘要： A pixel (P) of a display (20) includes a memory element in a form of a ferroelectric thin film transistor (“TFT”) (60) and a display element (62) operably coupled to the ferroelectric TFT (60). The ferroelectric TFT (60) is set to a conductive state in response to a conductive row drive voltage and a conductive column drive voltage being applied to the ferroelectric TFT (60) during a beginning phase of the addressing period for the pixel (P). The ferroelectric TFT (60) facilitates a charging of the display element (62) in response a charging row drive voltage and a charging column drive voltage being applied to the ferroelectric TFT (60) during an intermediate phase of the addressing period for the pixel (P). The ferroelectric TFT (60) is reset to a non-conductive state in response to a non-conductive row drive voltage and a non-conductive column drive voltage being applied to the ferroelectric TFT (60) during an ending phase of the addressing period for the pixel (P).
摘要翻译：显示器（20）的像素（P）包括可操作地耦合到铁电TFT（60）的铁电薄膜晶体管（“TFT”）（60）和显示元件（62）形式的存储元件。在对于像素（P）的寻址周期的开始阶段期间，铁电TFT（60）响应于导电行驱动电压和导电柱驱动电压被施加到铁电TFT（60）而被设置为导通状态。铁电TFT（60）在像素的寻址周期的中间阶段期间响应于充电行驱动电压和充电列驱动电压被施加到铁电TFT（60）而促进显示元件（62）的充电 P）。铁电TFT（60）响应于非导电行驱动电压而复位到非导通状态，并且在寻址周期的结束阶段期间将非导电列驱动电压施加到铁电TFT（60）像素（P）。

7. 发明授权

US07989806B2 Pixel performance improvement by use of a field-shield 有权
标题翻译：通过使用场盾来提升像素性能
公开(公告)号：US07989806B2
公开(公告)日：2011-08-02
申请号：US11993779
申请日：2006-06-27
申请人： Hjalmar Edzer Ayco Huitema , Gerwin Hermanus Gelinck
发明人： Hjalmar Edzer Ayco Huitema , Gerwin Hermanus Gelinck
IPC分类号： H01L33/44
CPC分类号： G02F1/136213 , G02F1/167 , G02F2001/136218 , H01L27/12 , H01L27/3272 , H01L51/0512 , H01L51/0554
摘要： A pixel cell (100) and method for making the same for an active matrix display includes a pixel pad (110) and a thin film field effect transistor (106) which selectably couples a signal to activate/deactivate the pixel pad. A field shield (112) is formed on an insulating layer (102) and connected to the pixel pad through the insulating layer such that the field shield extends over at least a portion of the pixel pad. The field shield may extend over the thin film transistor and form a second gate (215) used to enhance the performance of the thin film transistor and the pixel cell.
摘要翻译：像素单元（100）和用于制作有源矩阵显示器的方法包括可选地耦合信号以激活/去激活像素块的像素块（110）和薄膜场效应晶体管（106）。场绝缘层（112）形成在绝缘层（102）上，并通过绝缘层连接到像素焊盘，使得屏蔽层延伸到像素焊盘的至少一部分上。场屏蔽可以在薄膜晶体管上延伸并且形成用于增强薄膜晶体管和像素单元的性能的第二栅极（215）。

8. 发明授权

US07786951B2 Apparatus with display 有权
标题翻译：显示器具
公开(公告)号：US07786951B2
公开(公告)日：2010-08-31
申请号：US10552106
申请日：2004-03-26
申请人： Hjalmar Edzer Ayco Huitema , Eugenio Cantatore , Gerwin Hermanus Gelinck , Bas Jan Emile Van Rens
发明人： Hjalmar Edzer Ayco Huitema , Eugenio Cantatore , Gerwin Hermanus Gelinck , Bas Jan Emile Van Rens
IPC分类号： G09G5/00
CPC分类号： G06F1/1679 , G06F1/1601 , G06F1/1615 , G06F1/1616 , G06F1/1624 , G06F1/1641 , G06F1/1643 , G06F1/1647 , G06F1/1652 , G06F1/1683 , G06F1/169
摘要： A (display) device (31,4,5) contains multiple panels (3,7) like e.g. displays. Every display can be used to display its own content and can be rolled out of a sub-housing (5) like e.g. a cartridge separately. In different configurations the same cartridge can be arranged in such a way that the panels are used for a separate functionality or multiple display panels form one big screen.
摘要翻译： A（显示器）装置（31,4,5）包含多个面板（3,7）显示。每个显示器可以用于显示其自己的内容，并且可以从诸如如下的子壳体（5）滚出。一个墨盒分开。在不同的配置中，可以以这样的方式布置相同的盒，使得面板用于单独的功能或多个显示面板形成一个大屏幕。

9. 发明申请

US20080259066A1 Method for Addressing Active Matrix Displays with Ferroelectrical Thin Film Transistor Based Pixels 有权
标题翻译：用基于铁电薄膜晶体管的像素寻址有源矩阵显示的方法
公开(公告)号：US20080259066A1
公开(公告)日：2008-10-23
申请号：US12091677
申请日：2007-11-03
申请人： Hjalmar Edzer Ayco Huitema , Gerwin Hermanus Gelinck
发明人： Hjalmar Edzer Ayco Huitema , Gerwin Hermanus Gelinck
IPC分类号： G09G3/00
CPC分类号： G09G3/20 , G09G2300/08
摘要： A pixel (P) of a display (20) includes a memory element in a form of a ferroelectric thin film transistor (“TFT”) (60) and a display element (62) operably coupled to the ferroelectric TFT (60). The ferroelectric TFT (60) is set to a conductive state in response to a conductive row drive voltage and a conductive column drive voltage being applied to the ferroelectric TFT (60) during a beginning phase of the addressing period for the pixel (P). The ferroelectric TFT (60) facilitates a charging of the display element (62) in response a charging row drive voltage and a charging column drive voltage being applied to the ferroelectric TFT (60) during an intermediate phase of the addressing period for the pixel (P). The ferroelectric TFT (60) is reset to a non-conductive state in response to a non-conductive row drive voltage and a non-conductive column drive voltage being applied to the ferroelectric TFT (60) during an ending phase of the addressing period for the pixel (P).
摘要翻译：显示器（20）的像素（P）包括可操作地耦合到铁电TFT（60）的铁电薄膜晶体管（“TFT”）（60）和显示元件（62）形式的存储元件。在对于像素（P）的寻址周期的开始阶段期间，铁电TFT（60）响应于导电行驱动电压和导电柱驱动电压被施加到铁电TFT（60）而被设置为导通状态。铁电TFT（60）在像素的寻址周期的中间阶段期间响应于充电行驱动电压和充电列驱动电压被施加到铁电TFT（60）而促进显示元件（62）的充电 P）。铁电TFT（60）响应于非导电行驱动电压而复位到非导通状态，并且在寻址周期的结束阶段期间将非导电列驱动电压施加到铁电TFT（60）像素（P）。

10. 发明申请

US20080223746A1 Display Device Arrangement and Container 审中-公开
标题翻译：显示设备布置和容器
公开(公告)号：US20080223746A1
公开(公告)日：2008-09-18
申请号：US10572927
申请日：2004-09-24
申请人： Bas Jan Emile Van Rens , Gerwin Hermanus Gelinck , Hjalmar Edzer Ayco Huitema , Dagobert Michel De Leeuw , Aloysius Jozef Nijman
发明人： Bas Jan Emile Van Rens , Gerwin Hermanus Gelinck , Hjalmar Edzer Ayco Huitema , Dagobert Michel De Leeuw , Aloysius Jozef Nijman
IPC分类号： B65D81/24 , B65D81/20 , H01L51/00
CPC分类号： B65D81/24 , B65D81/2069 , B65D81/266 , H01L51/5237 , H01L51/5259 , H01L2251/5338
摘要： A display device arrangement (1) comprises a display device (10). The display device (10) comprises a component being degradable upon exposure to an environmental factor such as light or moisture. Such a component may for instance be an organic semiconductor or an organic electro-optical material. The display device arrangement (1) further comprises a container (100) for storing the display device (10). The container (100) comprises protective means (120) that are detached from the flexible display device (10) for reducing the exposure of the degradable component to the environmental factor. Consequently, the lifetime of the display device (10) is increased without having to attach protective barriers to the display device (10) itself.
摘要翻译：显示装置装置（1）包括显示装置（10）。显示装置（10）包括当暴露于诸如光或湿气的环境因素时可降解的成分。这种组分可以例如是有机半导体或有机电光材料。显示装置装置（1）还包括用于存储显示装置（10）的容器（100）。容器（100）包括与柔性显示装置（10）分离的保护装置（120），用于减少可降解组分暴露于环境因素。因此，显示装置（10）的寿命增加，而不必对显示装置（10）本身附加保护屏障。

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