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1. 发明授权

US07230265B2 Spin-polarization devices using rare earth-transition metal alloys 有权
标题翻译：使用稀土 - 过渡金属合金的自旋极化器件
公开(公告)号：US07230265B2
公开(公告)日：2007-06-12
申请号：US10908530
申请日：2005-05-16
申请人： Christian Kaiser , Stuart Stephen Papworth Parkin
发明人： Christian Kaiser , Stuart Stephen Papworth Parkin
IPC分类号： H01L29/06 , H01L29/08 , H01L39/00
CPC分类号： H01L43/10 , H01L43/08
摘要： A tunnel barrier in proximity with a layer of a rare earth element-transition metal (RE—TM) alloy forms a device that passes negatively spin-polarized current. The rare earth element includes at least one element selected from the group consisting of Gd, Tb, Dy, Ho, Er, Tm, and Yb. The RE and TM have respective sub-network moments such that the absolute magnitude of the RE sub-network moment is greater than the absolute magnitude of the TM sub-network moment. An additional layer of magnetic material may be used in combination with the tunnel barrier and the RE—TM alloy layer to form a magnetic tunnel junction. Still other layers of tunnel barrier and magnetic material may be used in combination with the foregoing to form a flux-closed double tunnel junction device.
摘要翻译：靠近稀土元素 - 过渡金属（RE-TM）合金层的隧道势垒形成通过负自旋极化电流的装置。稀土元素包括选自Gd，Tb，Dy，Ho，Er，Tm和Yb中的至少一种元素。 RE和TM具有相应的子网络时刻，使得RE子网络时刻的绝对幅度大于TM子网络时刻的绝对幅度。可以与隧道势垒和RE-TM合金层结合使用附加的磁性材料层以形成磁性隧道结。隧道势垒和磁性材料的其它层可以与前述结合使用以形成通量封闭双隧道结装置。

2. 发明申请

US20080165453A1 Spin-Polarization Devices Using Rare Earth-Transition Metal Alloys 有权
标题翻译：使用稀土过渡金属合金的旋转极化装置
公开(公告)号：US20080165453A1
公开(公告)日：2008-07-10
申请号：US11739051
申请日：2007-04-23
申请人： Christian Kaiser , Stuart Stephen Papworth Parkin
发明人： Christian Kaiser , Stuart Stephen Papworth Parkin
IPC分类号： G11B5/33
CPC分类号： H01L43/10 , H01L43/08
摘要： A tunnel barrier in proximity with a layer of a rare earth element-transition metal (RE-TM) alloy forms a device that passes negatively spin-polarized current. The rare earth element includes at least one element selected from the group consisting of Gd, Tb, Dy, Ho, Er, Tm, and Yb. The RE and TM have respective sub-network moments such that the absolute magnitude of the RE sub-network moment is greater than the absolute magnitude of the TM sub-network moment. An additional layer of magnetic material may be used in combination with the tunnel barrier and the RE-TM alloy layer to form a magnetic tunnel junction. Still other layers of tunnel barrier and magnetic material may be used in combination with the foregoing to form a flux-closed double tunnel junction device.
摘要翻译：靠近稀土元素 - 过渡金属（RE-TM）合金层的隧道势垒形成通过负自旋极化电流的装置。稀土元素包括选自Gd，Tb，Dy，Ho，Er，Tm和Yb中的至少一种元素。 RE和TM具有相应的子网络时刻，使得RE子网络时刻的绝对幅度大于TM子网络时刻的绝对幅度。可以与隧道势垒和RE-TM合金层结合使用附加的磁性材料层以形成磁性隧道结。隧道势垒和磁性材料的其它层可以与前述结合使用以形成通量封闭双隧道结装置。

3. 发明授权

US07531830B2 Spin-polarization devices using rare earth-transition metal alloys 有权
标题翻译：使用稀土 - 过渡金属合金的自旋极化器件
公开(公告)号：US07531830B2
公开(公告)日：2009-05-12
申请号：US11739051
申请日：2007-04-23
申请人： Christian Kaiser , Stuart Stephen Papworth Parkin
发明人： Christian Kaiser , Stuart Stephen Papworth Parkin
IPC分类号： H01L29/06 , H01L29/08 , H01L39/00
CPC分类号： H01L43/10 , H01L43/08
摘要： A tunnel barrier in proximity with a layer of a rare earth element-transition metal (RE-TM) alloy forms a device that passes negatively spin-polarized current. The rare earth element includes at least one element selected from the group consisting of Gd, Tb, Dy, Ho, Er, Tm, and Yb. The RE and TM have respective sub-network moments such that the absolute magnitude of the RE sub-network moment is greater than the absolute magnitude of the TM sub-network moment. An additional layer of magnetic material may be used in combination with the tunnel barrier and the RE-TM alloy layer to form a magnetic tunnel junction. Still other layers of tunnel barrier and magnetic material may be used in combination with the foregoing to form a flux-closed double tunnel junction device.
摘要翻译：靠近稀土元素 - 过渡金属（RE-TM）合金层的隧道势垒形成通过负自旋极化电流的装置。稀土元素包括选自Gd，Tb，Dy，Ho，Er，Tm和Yb中的至少一种元素。 RE和TM具有相应的子网络时刻，使得RE子网络时刻的绝对幅度大于TM子网络时刻的绝对幅度。可以与隧道势垒和RE-TM合金层结合使用附加的磁性材料层以形成磁性隧道结。隧道势垒和磁性材料的其它层可以与前述结合使用以形成通量封闭双隧道结装置。

4. 发明授权

US08936293B2 Robotic device for substrate transfer applications 有权
标题翻译：用于衬底转移应用的机器人装置
公开(公告)号：US08936293B2
公开(公告)日：2015-01-20
申请号：US13333688
申请日：2011-12-21
申请人： Christopher O. Lada , Stuart Stephen Papworth Parkin , Mahesh Govind Samant
发明人： Christopher O. Lada , Stuart Stephen Papworth Parkin , Mahesh Govind Samant
IPC分类号： B66F19/00
CPC分类号： H01L21/67742 , H01L21/68707
摘要： A device for use in the semiconductor industry includes a robotic arm whose end effector includes electromagnetic means to hold a substrate carrier. A pushing member can move independently of a flat, spatula-like portion of the device and is configured to exert force against the substrate carrier while the spatula-like portion is retracted from the substrate carrier, after the substrate carrier has been brought to its intended position. In this manner, the position of the substrate carrier is maintained at its intended position as the spatula-like portion is retracted.
摘要翻译：用于半导体工业的器件包括机器人臂，其末端执行器包括用于保持衬底载体的电磁装置。推动构件可以独立于装置的平坦的刮铲状部分移动，并且构造成在基板载体已经达到其预期之后，当刮板状部分从基板载体缩回时，向基板载体施加力位置。以这种方式，当刮刀状部分缩回时，基板载体的位置保持在其预定位置。

5. 发明授权

US08638601B1 Domain wall motion in perpendicularly magnetized wires having magnetic multilayers with engineered interfaces 有权
标题翻译：具有设计接口的磁性多层的垂直磁化线中的畴壁运动
公开(公告)号：US08638601B1
公开(公告)日：2014-01-28
申请号：US13543061
申请日：2012-07-06
申请人： Stuart Stephen Papworth Parkin , Luc Thomas , See-Hun Yang
发明人： Stuart Stephen Papworth Parkin , Luc Thomas , See-Hun Yang
IPC分类号： G11C11/14
CPC分类号： G11C19/0841 , G11C11/14 , G11C11/161 , G11C11/1675
摘要： Magnetic wires that include cobalt, nickel, and platinum layers show improved domain wall motion properties, when the domain walls are driven by pulses of electrical current. These wires exhibit perpendicular magnetic anisotropy, thereby supporting the propagation of narrow domain walls. The direction of motion of the domain walls can be influenced by the order in which the platinum and cobalt layers are arranged.
摘要翻译：当畴壁由电流脉冲驱动时，包括钴，镍和铂层的磁线显示改善的畴壁运动特性。这些线表现出垂直的磁各向异性，从而支持窄畴壁的传播。畴壁的运动方向可能受到排列铂和钴层的顺序的影响。

6. 发明授权

US08008097B2 MgO tunnel barriers and method of formation 有权
标题翻译： MgO隧道障碍及形成方法
公开(公告)号：US08008097B2
公开(公告)日：2011-08-30
申请号：US12554420
申请日：2009-09-04
申请人： Stuart Stephen Papworth Parkin
发明人： Stuart Stephen Papworth Parkin
IPC分类号： H01L21/285
CPC分类号： H01L43/08 , H01L43/10 , H01L43/12
摘要： MgO tunnel barriers are formed by depositing a thin layer of Mg on a suitable underlayer, and then directing oxygen and additional Mg towards the Mg layer. The oxygen reacts with the additional Mg and the Mg in the Mg layer to form a MgO tunnel barrier that enjoys excellent tunneling characteristics. The MgO tunnel barriers so formed may be used in magnetic tunnel junctions having tunneling magnetoresistance (TMR) values of greater than 100%. The highest TMR values are observed for junctions that have been annealed and that have a (100) crystallographic orientation.
摘要翻译：通过在合适的底层上沉积薄层的Mg，然后将氧和附加的Mg导向Mg层，形成MgO隧道势垒。氧与Mg层中的附加Mg和Mg反应形成具有优异隧道特性的MgO隧道势垒。如此形成的MgO隧道势垒可用于具有大于100％的隧道磁阻（TMR）值的磁隧道结。观察到已经退火并具有（100）晶体取向的结的最高TMR值。

7. 发明申请

US20110140762A1 Resistive Switching in Nitrogen-doped MgO 有权
标题翻译：氮掺杂MgO中的电阻开关
公开(公告)号：US20110140762A1
公开(公告)日：2011-06-16
申请号：US12636588
申请日：2009-12-11
申请人： Xin Jiang , Stuart Stephen Papworth Parkin , Mahesh Govind Samant , Cheng-Han Yang
发明人： Xin Jiang , Stuart Stephen Papworth Parkin , Mahesh Govind Samant , Cheng-Han Yang
IPC分类号： H03K17/00 , H01L45/00
CPC分类号： G11C11/5685 , C23C14/081 , C23C14/35 , G11C11/5671 , G11C13/0007 , G11C13/003 , G11C13/0069 , G11C17/16 , G11C17/165 , G11C2013/0073 , G11C2013/009 , G11C2213/76 , G11C2213/79 , H01L27/2436 , H01L27/2463 , H01L45/08 , H01L45/085 , H01L45/1233 , H01L45/146 , H01L45/1616 , H01L45/165
摘要： Nitrogen-doped MgO insulating layers exhibit voltage controlled resistance states, e.g., a high resistance and a low resistance state. Patterned nano-devices on the 100 nm scale show highly reproducible switching characteristics. The voltage levels at which such devices are switched between the two resistance levels can be systematically lowered by increasing the nitrogen concentration. Similarly, the resistance of the high resistance state can be varied by varying the nitrogen concentration, and decreases by orders of magnitude by varying the nitrogen concentrations by a few percent. On the other hand, the resistance of the low resistance state is nearly insensitive to the nitrogen doping level. The resistance of single Mg50O50-xNx layer devices can be varied over a wide range by limiting the current that can be passed during the SET process. Associated data storage devices can be constructed.
摘要翻译：氮掺杂的MgO绝缘层表现出电压控制的电阻状态，例如高电阻和低电阻状态。 100 nm刻度的图案化纳米器件显示出高度可重现的开关特性。通过增加氮浓度可以使这些装置在两个电阻水平之间切换的电压水平被系统地降低。类似地，可以通过改变氮浓度来改变高电阻状态的电阻，并且通过将氮浓度改变几个百分比来降低数量级。另一方面，低电阻状态的电阻对氮掺杂水平几乎不敏感。单个Mg50O50-xNx层器件的电阻可以通过限制在SET过程中可以通过的电流在宽范围内变化。可以构建相关的数据存储设备。

8. 发明授权

US07943399B2 Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element 有权
标题翻译：适用于电路集成的旋转电流开关磁存储元件和制造存储元件的方法
公开(公告)号：US07943399B2
公开(公告)日：2011-05-17
申请号：US12548428
申请日：2009-08-27
申请人： Jonathan Zanhong Sun , Rolf Allenspach , Stuart Stephen Papworth Parkin , John Casimir Slonczewski , Bruce David Terris
发明人： Jonathan Zanhong Sun , Rolf Allenspach , Stuart Stephen Papworth Parkin , John Casimir Slonczewski , Bruce David Terris
IPC分类号： H01L21/00
CPC分类号： H01L43/02 , B82Y25/00 , G11C11/16 , G11C11/161 , H01F10/3254 , H01F10/3263 , H01F10/3286 , H01F41/308 , H01L27/222 , H01L43/08 , H01L43/12
摘要： A magnetic memory element switchable by current injection includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers (e.g., between two of the magnetic layers). The memory element has the switching threshold current and device impedance suitable for integration with complementary metal oxide semiconductor (CMOS) integrated circuits.
摘要翻译：通过电流注入可切换的磁存储元件包括多个磁性层，所述多个磁性层中的至少一个具有垂直磁各向异性分量并且包括电流可切换磁矩，以及至少一个与所述多个磁性层相邻形成的阻挡层的磁性层（例如，两层磁性层之间）。存储元件具有适合与互补金属氧化物半导体（CMOS）集成电路集成的开关阈值电流和器件阻抗。

9. 发明授权

US07906231B2 Magnetic tunnel barriers and associated magnetic tunnel junctions with high tunneling magnetoresistance 有权
标题翻译：磁隧道势垒和具有高隧道磁阻的相关磁隧道结
公开(公告)号：US07906231B2
公开(公告)日：2011-03-15
申请号：US11931110
申请日：2007-10-31
申请人： Stuart Stephen Papworth Parkin
发明人： Stuart Stephen Papworth Parkin
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3906 , G11C11/16 , H01F10/3254 , H01F10/3272 , H01F10/3295 , H01L43/08 , Y10T428/1107 , Y10T428/1114 , Y10T428/1121 , Y10T428/115 , Y10T428/1193
摘要： Magnetic tunneling devices are formed from a first body centered cubic (bcc) magnetic layer and a second bcc magnetic layer. At least one spacer layer of bcc material between these magnetic layers exchange couples the first and second bcc magnetic layers. A tunnel barrier in proximity with the second magnetic layer permits spin-polarized current to pass between the tunnel barrier and the second layer; the tunnel barrier may be either MgO and Mg—ZnO. The first magnetic layer, the spacer layer, the second magnetic layer, and the tunnel barrier are all preferably (100) oriented. The MgO and Mg—ZnO tunnel barriers are prepared by first depositing a metallic layer on the second magnetic layer (e.g., a Mg layer), thereby substantially reducing the oxygen content in this magnetic layer, which improves the performance of the tunnel barriers.
摘要翻译：磁隧道器件由第一体心立方（bcc）磁性层和第二bcc磁性层形成。这些磁性层之间的至少一个bcc材料间隔层交换耦合第一和第二bcc磁性层。靠近第二磁性层的隧道势垒允许自旋极化电流在隧道势垒和第二层之间通过; 隧道势垒可以是MgO和Mg-ZnO。第一磁性层，间隔层，第二磁性层和隧道势垒都优选为（100）取向。通过首先在第二磁性层（例如，Mg层）上沉积金属层来制备MgO和Mg-ZnO隧道势垒，从而大大降低该磁性层中的氧含量，这改善了隧道势垒的性能。

10. 发明申请

US20090317923A1 SPIN-CURRENT SWITCHED MAGNETIC MEMORY ELEMENT SUITABLE FOR CIRCUIT INTEGRATION AND METHOD OF FABRICATING THE MEMORY ELEMENT 有权
标题翻译：用于电路集成的旋转电流开关磁记忆元件和制造记忆元件的方法
公开(公告)号：US20090317923A1
公开(公告)日：2009-12-24
申请号：US12548428
申请日：2009-08-27
申请人： Jonathan Zanhong Sun , Rolf Allenspach , Stuart Stephen Papworth Parkin , John Casimir Slonczewski , Bruce David Terris
发明人： Jonathan Zanhong Sun , Rolf Allenspach , Stuart Stephen Papworth Parkin , John Casimir Slonczewski , Bruce David Terris
IPC分类号： H01L21/00
CPC分类号： H01L43/02 , B82Y25/00 , G11C11/16 , G11C11/161 , H01F10/3254 , H01F10/3263 , H01F10/3286 , H01F41/308 , H01L27/222 , H01L43/08 , H01L43/12
摘要： A magnetic memory element switchable by current injection includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers (e.g., between two of the magnetic layers). The memory element has the switching threshold current and device impedance suitable for integration with complementary metal oxide semiconductor (CMOS) integrated circuits.
摘要翻译：通过电流注入可切换的磁存储元件包括多个磁性层，所述多个磁性层中的至少一个具有垂直磁各向异性分量并且包括电流可切换磁矩，以及至少一个与所述多个磁性层相邻形成的阻挡层的磁性层（例如，两层磁性层之间）。存储元件具有适合与互补金属氧化物半导体（CMOS）集成电路集成的开关阈值电流和器件阻抗。

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